Sonnenberg, Victor 
; Martino, João Antonio
Source: SBMicro 2001: proceedings. Conference titles: International Conference on Microelectronics and Packaging. Unidade: EP
Assunto: CIRCUITOS INTEGRADOS
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SONNENBERG, Victor e MARTINO, João Antonio. New method for determining the silicon film doping concentration and the back interface oxide charge density using SOI-MOS capacitor. 2001, Anais.. Brasília: SBMicro, 2001. . Acesso em: 15 nov. 2025.APA
Sonnenberg, V., & Martino, J. A. (2001). New method for determining the silicon film doping concentration and the back interface oxide charge density using SOI-MOS capacitor. In SBMicro 2001: proceedings. Brasília: SBMicro.NLM
Sonnenberg V, Martino JA. New method for determining the silicon film doping concentration and the back interface oxide charge density using SOI-MOS capacitor. SBMicro 2001: proceedings. 2001 ;[citado 2025 nov. 15 ]Vancouver
Sonnenberg V, Martino JA. New method for determining the silicon film doping concentration and the back interface oxide charge density using SOI-MOS capacitor. SBMicro 2001: proceedings. 2001 ;[citado 2025 nov. 15 ]
