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Filtros : "Microelectronic Engineering" "Indexado no Science Citation Index" Limpar

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  • Artigo de periodico

    Analytical modeling of the substrate effect on accumulation-mode SOI pMOSFETs at room temperature and at 77k (1997)

    Pavanello, Marcelo Antonio ; Martino, João Antonio ; Colinge, Jean-Pierre

    Fonte: Microelectronic Engineering. Unidade: EP

    Assunto: MICROELETRÔNICA

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    • ABNT

      PAVANELLO, Marcelo Antonio e MARTINO, João Antonio e COLINGE, Jean-Pierre. Analytical modeling of the substrate effect on accumulation-mode SOI pMOSFETs at room temperature and at 77k. Microelectronic Engineering, v. 36, n. 1-4, p. 375-378, 1997Tradução . . Disponível em: https://doi.org/10.1016/s0167-9317(97)00083-x. Acesso em: 15 nov. 2025.

    • APA

      Pavanello, M. A., Martino, J. A., & Colinge, J. -P. (1997). Analytical modeling of the substrate effect on accumulation-mode SOI pMOSFETs at room temperature and at 77k. Microelectronic Engineering, 36( 1-4), 375-378. doi:10.1016/s0167-9317(97)00083-x

    • NLM

      Pavanello MA, Martino JA, Colinge J-P. Analytical modeling of the substrate effect on accumulation-mode SOI pMOSFETs at room temperature and at 77k [Internet]. Microelectronic Engineering. 1997 ; 36( 1-4): 375-378.[citado 2025 nov. 15 ] Available from: https://doi.org/10.1016/s0167-9317(97)00083-x

    • Vancouver

      Pavanello MA, Martino JA, Colinge J-P. Analytical modeling of the substrate effect on accumulation-mode SOI pMOSFETs at room temperature and at 77k [Internet]. Microelectronic Engineering. 1997 ; 36( 1-4): 375-378.[citado 2025 nov. 15 ] Available from: https://doi.org/10.1016/s0167-9317(97)00083-x

  • Artigo de periodico

    Reactive ion etching and plasma etching of tungsten (1993)

    Verdonck, Patrick Bernard; Brasseur, G.; Swart, J.

    Fonte: Microelectronic Engineering. Unidade: EP

    Assunto: CIRCUITOS INTEGRADOS

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    • ABNT

      VERDONCK, Patrick Bernard e BRASSEUR, G. e SWART, J. Reactive ion etching and plasma etching of tungsten. Microelectronic Engineering, v. 21, p. 329-332, 1993Tradução . . Disponível em: https://doi.org/10.1016/0167-9317(93)90084-i. Acesso em: 15 nov. 2025.

    • APA

      Verdonck, P. B., Brasseur, G., & Swart, J. (1993). Reactive ion etching and plasma etching of tungsten. Microelectronic Engineering, 21, 329-332. doi:10.1016/0167-9317(93)90084-i

    • NLM

      Verdonck PB, Brasseur G, Swart J. Reactive ion etching and plasma etching of tungsten [Internet]. Microelectronic Engineering. 1993 ; 21 329-332.[citado 2025 nov. 15 ] Available from: https://doi.org/10.1016/0167-9317(93)90084-i

    • Vancouver

      Verdonck PB, Brasseur G, Swart J. Reactive ion etching and plasma etching of tungsten [Internet]. Microelectronic Engineering. 1993 ; 21 329-332.[citado 2025 nov. 15 ] Available from: https://doi.org/10.1016/0167-9317(93)90084-i

  • Artigo de periodico

    Laser enhanced polymer etching in different ambients (1989)

    Verdonck, Patrick Bernard; Brasseur, G.; Coopmans, F.

    Fonte: Microelectronic Engineering. Unidade: EP

    Assunto: CIRCUITOS INTEGRADOS

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    • ABNT

      VERDONCK, Patrick Bernard e BRASSEUR, G. e COOPMANS, F. Laser enhanced polymer etching in different ambients. Microelectronic Engineering, v. 9, p. 507-510, 1989Tradução . . Disponível em: https://doi.org/10.1016/0167-9317(89)90111-1. Acesso em: 15 nov. 2025.

    • APA

      Verdonck, P. B., Brasseur, G., & Coopmans, F. (1989). Laser enhanced polymer etching in different ambients. Microelectronic Engineering, 9, 507-510. doi:10.1016/0167-9317(89)90111-1

    • NLM

      Verdonck PB, Brasseur G, Coopmans F. Laser enhanced polymer etching in different ambients [Internet]. Microelectronic Engineering. 1989 ; 9 507-510.[citado 2025 nov. 15 ] Available from: https://doi.org/10.1016/0167-9317(89)90111-1

    • Vancouver

      Verdonck PB, Brasseur G, Coopmans F. Laser enhanced polymer etching in different ambients [Internet]. Microelectronic Engineering. 1989 ; 9 507-510.[citado 2025 nov. 15 ] Available from: https://doi.org/10.1016/0167-9317(89)90111-1
  • 1

1 - 3 (3 registros)

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