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Artigo de periodico
Fractional-order MOS capacitor: experimental results and Monte Carlo analysis (2023)
Fernandes, Lucas Almir dos Santos; Alayo Chávez, Marco Isaías ; Martino, João Antonio
Source: Journal of Integrated Circuits and Systems. Unidade: EP
Subjects: FRACTAIS, SIMULAÇÃO, AVALIAÇÃO DE DESEMPENHO
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
FERNANDES, Lucas Almir dos Santos e ALAYO CHÁVEZ, Marco Isaías e MARTINO, João Antonio. Fractional-order MOS capacitor: experimental results and Monte Carlo analysis. Journal of Integrated Circuits and Systems, v. 18, n. 1, p. 1-5, 2023Tradução . . Disponível em: https://doi.org/10.29292/jics.v18i1.660. Acesso em: 16 nov. 2025.
APA
Fernandes, L. A. dos S., Alayo Chávez, M. I., & Martino, J. A. (2023). Fractional-order MOS capacitor: experimental results and Monte Carlo analysis. Journal of Integrated Circuits and Systems, 18( 1), 1-5. doi:10.29292/jics.v18i1.660
NLM
Fernandes LA dos S, Alayo Chávez MI, Martino JA. Fractional-order MOS capacitor: experimental results and Monte Carlo analysis [Internet]. Journal of Integrated Circuits and Systems. 2023 ; 18( 1): 1-5.[citado 2025 nov. 16 ] Available from: https://doi.org/10.29292/jics.v18i1.660
Vancouver
Fernandes LA dos S, Alayo Chávez MI, Martino JA. Fractional-order MOS capacitor: experimental results and Monte Carlo analysis [Internet]. Journal of Integrated Circuits and Systems. 2023 ; 18( 1): 1-5.[citado 2025 nov. 16 ] Available from: https://doi.org/10.29292/jics.v18i1.660
Artigo de periodico
Low-dropout voltage regulator designed with nanowire TFET with different source composition experimental data (2023)
Toledo, Rodrigo do Nascimento; Martino, João Antonio ; Agopian, Paula Ghedini Der
Source: Journal of Integrated Circuits and Systems. Unidade: EP
Subjects: TRANSISTORES, CIRCUITOS ANALÓGICOS, NANOTECNOLOGIA
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ABNT
TOLEDO, Rodrigo do Nascimento e MARTINO, João Antonio e AGOPIAN, Paula Ghedini Der. Low-dropout voltage regulator designed with nanowire TFET with different source composition experimental data. Journal of Integrated Circuits and Systems, v. 18, n. 1, p. 1-6, 2023Tradução . . Disponível em: https://doi.org/10.29292/jics.v18i1.653. Acesso em: 16 nov. 2025.
APA
Toledo, R. do N., Martino, J. A., & Agopian, P. G. D. (2023). Low-dropout voltage regulator designed with nanowire TFET with different source composition experimental data. Journal of Integrated Circuits and Systems, 18( 1), 1-6. doi:10.29292/jics.v18il.653
NLM
Toledo R do N, Martino JA, Agopian PGD. Low-dropout voltage regulator designed with nanowire TFET with different source composition experimental data [Internet]. Journal of Integrated Circuits and Systems. 2023 ;18( 1): 1-6.[citado 2025 nov. 16 ] Available from: https://doi.org/10.29292/jics.v18i1.653
Vancouver
Toledo R do N, Martino JA, Agopian PGD. Low-dropout voltage regulator designed with nanowire TFET with different source composition experimental data [Internet]. Journal of Integrated Circuits and Systems. 2023 ;18( 1): 1-6.[citado 2025 nov. 16 ] Available from: https://doi.org/10.29292/jics.v18i1.653
Artigo de periodico
Millimeter-wave wireless integrated systems–what to expect for future solutions (2022)
Serrano, Ariana Maria da Conceição Lacorte Caniato ; Alves, Gustavo Marcati Alexandrino; Abe, Igor Yamamoto ; Marcelo, Gustavo Adolfo Palomino
Source: Journal of Integrated Circuits and Systems. Unidade: EP
Subjects: CIRCUITOS INTEGRADOS, ONDAS ELETROMAGNÉTICAS, PROCESSAMENTO DE DADOS, TERCEIRA DIMENSÃO
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ABNT
SERRANO, Ariana Maria da Conceição Lacorte Caniato et al. Millimeter-wave wireless integrated systems–what to expect for future solutions. Journal of Integrated Circuits and Systems, v. 17, n. 2, p. 1-6, 2022Tradução . . Disponível em: https://doi.org/10.29292/jics.v17i2.627. Acesso em: 16 nov. 2025.
APA
Serrano, A. M. da C. L. C., Alves, G. M. A., Abe, I. Y., & Marcelo, G. A. P. (2022). Millimeter-wave wireless integrated systems–what to expect for future solutions. Journal of Integrated Circuits and Systems, 17( 2), 1-6. doi:10.29292/jics.v17i2.627
NLM
Serrano AM da CLC, Alves GMA, Abe IY, Marcelo GAP. Millimeter-wave wireless integrated systems–what to expect for future solutions [Internet]. Journal of Integrated Circuits and Systems. 2022 ; 17( 2): 1-6.[citado 2025 nov. 16 ] Available from: https://doi.org/10.29292/jics.v17i2.627
Vancouver
Serrano AM da CLC, Alves GMA, Abe IY, Marcelo GAP. Millimeter-wave wireless integrated systems–what to expect for future solutions [Internet]. Journal of Integrated Circuits and Systems. 2022 ; 17( 2): 1-6.[citado 2025 nov. 16 ] Available from: https://doi.org/10.29292/jics.v17i2.627
Artigo de periodico
Reconfigurable SOI-MOSFET: past, present and future applications (2022)
Rangel, Ricardo Cardoso; Sasaki, Kátia Regina Akemi ; Martino, João Antonio
Source: Journal of Integrated Circuits and Systems. Unidade: EP
Subjects: TRANSISTORES, SENSOR, CIRCUITOS INTEGRADOS MOS
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
RANGEL, Ricardo Cardoso e SASAKI, Kátia Regina Akemi e MARTINO, João Antonio. Reconfigurable SOI-MOSFET: past, present and future applications. Journal of Integrated Circuits and Systems, v. 17, n. 2, p. 1-9, 2022Tradução . . Disponível em: https://doi.org/10.29292/jics.v17i2.626. Acesso em: 16 nov. 2025.
APA
Rangel, R. C., Sasaki, K. R. A., & Martino, J. A. (2022). Reconfigurable SOI-MOSFET: past, present and future applications. Journal of Integrated Circuits and Systems, 17( 2), 1-9. doi:10.29292/jics.v17i2.626
NLM
Rangel RC, Sasaki KRA, Martino JA. Reconfigurable SOI-MOSFET: past, present and future applications [Internet]. Journal of Integrated Circuits and Systems. 2022 ; 17( 2): 1-9.[citado 2025 nov. 16 ] Available from: https://doi.org/10.29292/jics.v17i2.626
Vancouver
Rangel RC, Sasaki KRA, Martino JA. Reconfigurable SOI-MOSFET: past, present and future applications [Internet]. Journal of Integrated Circuits and Systems. 2022 ; 17( 2): 1-9.[citado 2025 nov. 16 ] Available from: https://doi.org/10.29292/jics.v17i2.626
Artigo de periodico
Tunnel-FET evolution and applications for analog circuits (2022)
Agopian, Paula Ghedini Der ; Martino, João Antonio ; Simoen, Eddy ; Rooyackers, Rita ; Claeys, Cor
Source: Journal of Integrated Circuits and Systems. Unidade: EP
Subjects: TRANSISTORES, SENSOR, CIRCUITOS ANALÓGICOS, CIRCUITOS DIGITAIS
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
AGOPIAN, Paula Ghedini Der et al. Tunnel-FET evolution and applications for analog circuits. Journal of Integrated Circuits and Systems, v. 17, n. 2, p. 1-7, 2022Tradução . . Disponível em: https://doi.org/10.29292/jics.v17i2.631. Acesso em: 16 nov. 2025.
APA
Agopian, P. G. D., Martino, J. A., Simoen, E., Rooyackers, R., & Claeys, C. (2022). Tunnel-FET evolution and applications for analog circuits. Journal of Integrated Circuits and Systems, 17( 2), 1-7. doi:10.29292/jics.v17i2.631
NLM
Agopian PGD, Martino JA, Simoen E, Rooyackers R, Claeys C. Tunnel-FET evolution and applications for analog circuits [Internet]. Journal of Integrated Circuits and Systems. 2022 ; 17( 2): 1-7.[citado 2025 nov. 16 ] Available from: https://doi.org/10.29292/jics.v17i2.631
Vancouver
Agopian PGD, Martino JA, Simoen E, Rooyackers R, Claeys C. Tunnel-FET evolution and applications for analog circuits [Internet]. Journal of Integrated Circuits and Systems. 2022 ; 17( 2): 1-7.[citado 2025 nov. 16 ] Available from: https://doi.org/10.29292/jics.v17i2.631
Artigo de periodico
Experimental analysis of trade-off between transistor efficiency and unit gain frequency of nanosheet NMOSFET down to -100°C (2022)
Silva, Vanessa Cristina Pereira da; Leal, João Vitor da Costa; Perina, Welder F; Martino, João Antonio ; Simoen, Eddy ; Veloso, A; Agopian, Paula Ghedini Der
Source: Journal of Integrated Circuits and Systems. Unidade: EP
Subjects: TRANSISTORES, NANOTECNOLOGIA, BAIXA TEMPERATURA
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ABNT
SILVA, Vanessa Cristina Pereira da et al. Experimental analysis of trade-off between transistor efficiency and unit gain frequency of nanosheet NMOSFET down to -100°C. Journal of Integrated Circuits and Systems, v. 17, n. 1, p. 1-6, 2022Tradução . . Disponível em: https://doi.org/10.29292/jics.v17il.550. Acesso em: 16 nov. 2025.
APA
Silva, V. C. P. da, Leal, J. V. da C., Perina, W. F., Martino, J. A., Simoen, E., Veloso, A., & Agopian, P. G. D. (2022). Experimental analysis of trade-off between transistor efficiency and unit gain frequency of nanosheet NMOSFET down to -100°C. Journal of Integrated Circuits and Systems, 17( 1), 1-6. doi:10.29292/jics.v17i1.550
NLM
Silva VCP da, Leal JV da C, Perina WF, Martino JA, Simoen E, Veloso A, Agopian PGD. Experimental analysis of trade-off between transistor efficiency and unit gain frequency of nanosheet NMOSFET down to -100°C [Internet]. Journal of Integrated Circuits and Systems. 2022 ;17( 1): 1-6.[citado 2025 nov. 16 ] Available from: https://doi.org/10.29292/jics.v17il.550
Vancouver
Silva VCP da, Leal JV da C, Perina WF, Martino JA, Simoen E, Veloso A, Agopian PGD. Experimental analysis of trade-off between transistor efficiency and unit gain frequency of nanosheet NMOSFET down to -100°C [Internet]. Journal of Integrated Circuits and Systems. 2022 ;17( 1): 1-6.[citado 2025 nov. 16 ] Available from: https://doi.org/10.29292/jics.v17il.550

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