ReP USP - Resultado da busca

Artigo de periodico
Potentiostatic electrodeposition of Au-Sn alloys from a non-cyanide bath for soldering: influence of reagents concentrations (2010)
Cardoso, Juliana Lopes; Santos Filho, Sebastião Gomes dos
Fonte: Journal of Integrated Circuits and Systems. Unidade: EP
Assuntos: ELETROQUÍMICA, CIRCUITOS INTEGRADOS
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ABNT
CARDOSO, Juliana Lopes e SANTOS FILHO, Sebastião Gomes dos. Potentiostatic electrodeposition of Au-Sn alloys from a non-cyanide bath for soldering: influence of reagents concentrations. Journal of Integrated Circuits and Systems, v. 5, n. 2, p. 95-102, 2010Tradução . . Acesso em: 15 nov. 2025.
APA
Cardoso, J. L., & Santos Filho, S. G. dos. (2010). Potentiostatic electrodeposition of Au-Sn alloys from a non-cyanide bath for soldering: influence of reagents concentrations. Journal of Integrated Circuits and Systems, 5( 2), 95-102.
NLM
Cardoso JL, Santos Filho SG dos. Potentiostatic electrodeposition of Au-Sn alloys from a non-cyanide bath for soldering: influence of reagents concentrations. Journal of Integrated Circuits and Systems. 2010 ;5( 2): 95-102.[citado 2025 nov. 15 ]
Vancouver
Cardoso JL, Santos Filho SG dos. Potentiostatic electrodeposition of Au-Sn alloys from a non-cyanide bath for soldering: influence of reagents concentrations. Journal of Integrated Circuits and Systems. 2010 ;5( 2): 95-102.[citado 2025 nov. 15 ]
Artigo de periodico
PECVD silicon oxynitrite as insulator for MDMO-PPV thin-film transistors (2010)
Cavallari, Marco Roberto ; Albertin, Katia Franklin ; Santos, Gerson dos; Ramos, Carlos Alberto Santos; Pereyra, Inés ; Fonseca, Fernando Josepetti ; Andrade, Adnei Melges de
Fonte: Journal of Integrated Circuits and Systems. Unidades: EP, IEE
Assuntos: TRANSISTORES, SEMICONDUTORES
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ABNT
CAVALLARI, Marco Roberto et al. PECVD silicon oxynitrite as insulator for MDMO-PPV thin-film transistors. Journal of Integrated Circuits and Systems, v. 5, n. 2, p. 116-124, 2010Tradução . . Acesso em: 15 nov. 2025.
APA
Cavallari, M. R., Albertin, K. F., Santos, G. dos, Ramos, C. A. S., Pereyra, I., Fonseca, F. J., & Andrade, A. M. de. (2010). PECVD silicon oxynitrite as insulator for MDMO-PPV thin-film transistors. Journal of Integrated Circuits and Systems, 5( 2), 116-124.
NLM
Cavallari MR, Albertin KF, Santos G dos, Ramos CAS, Pereyra I, Fonseca FJ, Andrade AM de. PECVD silicon oxynitrite as insulator for MDMO-PPV thin-film transistors. Journal of Integrated Circuits and Systems. 2010 ;5( 2): 116-124.[citado 2025 nov. 15 ]
Vancouver
Cavallari MR, Albertin KF, Santos G dos, Ramos CAS, Pereyra I, Fonseca FJ, Andrade AM de. PECVD silicon oxynitrite as insulator for MDMO-PPV thin-film transistors. Journal of Integrated Circuits and Systems. 2010 ;5( 2): 116-124.[citado 2025 nov. 15 ]
Artigo de periodico
Impact of selective epitaxial growth and uniaxial/biaxial strain on DIBL effect using triple gate FinFETs (2010)
Santos, Sara Dereste dos; Martino, João Antonio ; Simoen, Eddy ; Claeys, Cor
Fonte: Journal of Integrated Circuits and Systems. Unidade: EP
Assunto: TRANSISTORES
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ABNT
SANTOS, Sara Dereste dos et al. Impact of selective epitaxial growth and uniaxial/biaxial strain on DIBL effect using triple gate FinFETs. Journal of Integrated Circuits and Systems, v. 5, n. 2, p. 154-159, 2010Tradução . . Disponível em: https://doi.org/10.29292/jics.v5i2.322. Acesso em: 15 nov. 2025.
APA
Santos, S. D. dos, Martino, J. A., Simoen, E., & Claeys, C. (2010). Impact of selective epitaxial growth and uniaxial/biaxial strain on DIBL effect using triple gate FinFETs. Journal of Integrated Circuits and Systems, 5( 2), 154-159. doi:10.29292/jics.v5i2.322
NLM
Santos SD dos, Martino JA, Simoen E, Claeys C. Impact of selective epitaxial growth and uniaxial/biaxial strain on DIBL effect using triple gate FinFETs [Internet]. Journal of Integrated Circuits and Systems. 2010 ;5( 2): 154-159.[citado 2025 nov. 15 ] Available from: https://doi.org/10.29292/jics.v5i2.322
Vancouver
Santos SD dos, Martino JA, Simoen E, Claeys C. Impact of selective epitaxial growth and uniaxial/biaxial strain on DIBL effect using triple gate FinFETs [Internet]. Journal of Integrated Circuits and Systems. 2010 ;5( 2): 154-159.[citado 2025 nov. 15 ] Available from: https://doi.org/10.29292/jics.v5i2.322
Artigo de periodico
Flow-injection analysis technique used to electrochemically measure nitrite through a gold working electrode modified with 1-2 diaminobenzene (DAB) (2010)
Almeida, F L; Santos Filho, Sebastião Gomes dos ; Fontes, M B A
Fonte: Journal of Integrated Circuits and Systems. Unidade: EP
Assuntos: ELETROQUÍMICA, ELETRODO, NITRATOS
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ABNT
ALMEIDA, F L e SANTOS FILHO, Sebastião Gomes dos e FONTES, M B A. Flow-injection analysis technique used to electrochemically measure nitrite through a gold working electrode modified with 1-2 diaminobenzene (DAB). Journal of Integrated Circuits and Systems, v. 5, n. 2, p. 134-139, 2010Tradução . . Acesso em: 15 nov. 2025.
APA
Almeida, F. L., Santos Filho, S. G. dos, & Fontes, M. B. A. (2010). Flow-injection analysis technique used to electrochemically measure nitrite through a gold working electrode modified with 1-2 diaminobenzene (DAB). Journal of Integrated Circuits and Systems, 5( 2), 134-139.
NLM
Almeida FL, Santos Filho SG dos, Fontes MBA. Flow-injection analysis technique used to electrochemically measure nitrite through a gold working electrode modified with 1-2 diaminobenzene (DAB). Journal of Integrated Circuits and Systems. 2010 ;5( 2): 134-139.[citado 2025 nov. 15 ]
Vancouver
Almeida FL, Santos Filho SG dos, Fontes MBA. Flow-injection analysis technique used to electrochemically measure nitrite through a gold working electrode modified with 1-2 diaminobenzene (DAB). Journal of Integrated Circuits and Systems. 2010 ;5( 2): 134-139.[citado 2025 nov. 15 ]
Artigo de periodico
Performance of source follower buffers implemented with standard and strained triple-gate nFinFETs (2010)
Pavanello, Marcelo Antonio ; Martino, João Antonio ; Simoen, Eddy ; Claeys, Cor ; Rooyackers, Rita; Collaert, Nadine
Fonte: Journal of Integrated Circuits and Systems. Unidade: EP
Assunto: TRANSISTORES
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
PAVANELLO, Marcelo Antonio et al. Performance of source follower buffers implemented with standard and strained triple-gate nFinFETs. Journal of Integrated Circuits and Systems, v. 5, n. 2, p. 168-173, 2010Tradução . . Disponível em: https://doi.org/10.29292/jics.v5i2.324. Acesso em: 15 nov. 2025.
APA
Pavanello, M. A., Martino, J. A., Simoen, E., Claeys, C., Rooyackers, R., & Collaert, N. (2010). Performance of source follower buffers implemented with standard and strained triple-gate nFinFETs. Journal of Integrated Circuits and Systems, 5( 2), 168-173. doi:10.29292/jics.v5i2.324
NLM
Pavanello MA, Martino JA, Simoen E, Claeys C, Rooyackers R, Collaert N. Performance of source follower buffers implemented with standard and strained triple-gate nFinFETs [Internet]. Journal of Integrated Circuits and Systems. 2010 ;5( 2): 168-173.[citado 2025 nov. 15 ] Available from: https://doi.org/10.29292/jics.v5i2.324
Vancouver
Pavanello MA, Martino JA, Simoen E, Claeys C, Rooyackers R, Collaert N. Performance of source follower buffers implemented with standard and strained triple-gate nFinFETs [Internet]. Journal of Integrated Circuits and Systems. 2010 ;5( 2): 168-173.[citado 2025 nov. 15 ] Available from: https://doi.org/10.29292/jics.v5i2.324

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