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Artigo de periodico
Tunnel-FET evolution and applications for analog circuits (2022)
Agopian, Paula Ghedini Der ; Martino, João Antonio ; Simoen, Eddy ; Rooyackers, Rita ; Claeys, Cor
Source: Journal of Integrated Circuits and Systems. Unidade: EP
Subjects: TRANSISTORES, SENSOR, CIRCUITOS ANALÓGICOS, CIRCUITOS DIGITAIS
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
AGOPIAN, Paula Ghedini Der et al. Tunnel-FET evolution and applications for analog circuits. Journal of Integrated Circuits and Systems, v. 17, n. 2, p. 1-7, 2022Tradução . . Disponível em: https://doi.org/10.29292/jics.v17i2.631. Acesso em: 15 nov. 2025.
APA
Agopian, P. G. D., Martino, J. A., Simoen, E., Rooyackers, R., & Claeys, C. (2022). Tunnel-FET evolution and applications for analog circuits. Journal of Integrated Circuits and Systems, 17( 2), 1-7. doi:10.29292/jics.v17i2.631
NLM
Agopian PGD, Martino JA, Simoen E, Rooyackers R, Claeys C. Tunnel-FET evolution and applications for analog circuits [Internet]. Journal of Integrated Circuits and Systems. 2022 ; 17( 2): 1-7.[citado 2025 nov. 15 ] Available from: https://doi.org/10.29292/jics.v17i2.631
Vancouver
Agopian PGD, Martino JA, Simoen E, Rooyackers R, Claeys C. Tunnel-FET evolution and applications for analog circuits [Internet]. Journal of Integrated Circuits and Systems. 2022 ; 17( 2): 1-7.[citado 2025 nov. 15 ] Available from: https://doi.org/10.29292/jics.v17i2.631
Artigo de periodico
Nanowire Tunnel Field Effect Transistors at High Temperature (2013)
Martino, Márcio Dalla Valle; Neves, Felipe Souza; Agopian, Paula Ghedini Der ; Martino, João Antonio ; Rooyackers, Rita; Claeys, Cor
Source: Journal of Integrated Circuits and Systems. Unidade: EP
Assunto: NANOELETRÔNICA
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
MARTINO, Márcio Dalla Valle et al. Nanowire Tunnel Field Effect Transistors at High Temperature. Journal of Integrated Circuits and Systems, v. 8, n. 2, p. 110-115, 2013Tradução . . Disponível em: https://doi.org/10.29292/jics.v8i2.381. Acesso em: 15 nov. 2025.
APA
Martino, M. D. V., Neves, F. S., Agopian, P. G. D., Martino, J. A., Rooyackers, R., & Claeys, C. (2013). Nanowire Tunnel Field Effect Transistors at High Temperature. Journal of Integrated Circuits and Systems, 8( 2), 110-115. doi:10.29292/jics.v8i2.381
NLM
Martino MDV, Neves FS, Agopian PGD, Martino JA, Rooyackers R, Claeys C. Nanowire Tunnel Field Effect Transistors at High Temperature [Internet]. Journal of Integrated Circuits and Systems. 2013 ;8( 2): 110-115.[citado 2025 nov. 15 ] Available from: https://doi.org/10.29292/jics.v8i2.381
Vancouver
Martino MDV, Neves FS, Agopian PGD, Martino JA, Rooyackers R, Claeys C. Nanowire Tunnel Field Effect Transistors at High Temperature [Internet]. Journal of Integrated Circuits and Systems. 2013 ;8( 2): 110-115.[citado 2025 nov. 15 ] Available from: https://doi.org/10.29292/jics.v8i2.381
Artigo de periodico
Performance of source follower buffers implemented with standard and strained triple-gate nFinFETs (2010)
Pavanello, Marcelo Antonio ; Martino, João Antonio ; Simoen, Eddy ; Claeys, Cor ; Rooyackers, Rita; Collaert, Nadine
Source: Journal of Integrated Circuits and Systems. Unidade: EP
Assunto: TRANSISTORES
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
PAVANELLO, Marcelo Antonio et al. Performance of source follower buffers implemented with standard and strained triple-gate nFinFETs. Journal of Integrated Circuits and Systems, v. 5, n. 2, p. 168-173, 2010Tradução . . Disponível em: https://doi.org/10.29292/jics.v5i2.324. Acesso em: 15 nov. 2025.
APA
Pavanello, M. A., Martino, J. A., Simoen, E., Claeys, C., Rooyackers, R., & Collaert, N. (2010). Performance of source follower buffers implemented with standard and strained triple-gate nFinFETs. Journal of Integrated Circuits and Systems, 5( 2), 168-173. doi:10.29292/jics.v5i2.324
NLM
Pavanello MA, Martino JA, Simoen E, Claeys C, Rooyackers R, Collaert N. Performance of source follower buffers implemented with standard and strained triple-gate nFinFETs [Internet]. Journal of Integrated Circuits and Systems. 2010 ;5( 2): 168-173.[citado 2025 nov. 15 ] Available from: https://doi.org/10.29292/jics.v5i2.324
Vancouver
Pavanello MA, Martino JA, Simoen E, Claeys C, Rooyackers R, Collaert N. Performance of source follower buffers implemented with standard and strained triple-gate nFinFETs [Internet]. Journal of Integrated Circuits and Systems. 2010 ;5( 2): 168-173.[citado 2025 nov. 15 ] Available from: https://doi.org/10.29292/jics.v5i2.324

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