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Filtros : "CIRCUITOS INTEGRADOS MOS" "1999" Limpar

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  • Artigo de periodico

    Analysis of transition region and accumulation layer effect in the subthreshold slope in SOI nMOSFETs and their influences on the interface trap density extraction (1999)

    Sonnenberg, Victor ; Martino, João Antonio

    Source: Solid-State Electronics. Unidade: EP

    Assunto: CIRCUITOS INTEGRADOS MOS

    Acesso à fonteDOIHow to cite
    A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas

    • ABNT

      SONNENBERG, Victor e MARTINO, João Antonio. Analysis of transition region and accumulation layer effect in the subthreshold slope in SOI nMOSFETs and their influences on the interface trap density extraction. Solid-State Electronics, 1999Tradução . . Disponível em: https://doi.org/10.1016/s0038-1101(99)00191-4. Acesso em: 16 nov. 2025.

    • APA

      Sonnenberg, V., & Martino, J. A. (1999). Analysis of transition region and accumulation layer effect in the subthreshold slope in SOI nMOSFETs and their influences on the interface trap density extraction. Solid-State Electronics. doi:10.1016/s0038-1101(99)00191-4

    • NLM

      Sonnenberg V, Martino JA. Analysis of transition region and accumulation layer effect in the subthreshold slope in SOI nMOSFETs and their influences on the interface trap density extraction [Internet]. Solid-State Electronics. 1999 ;[citado 2025 nov. 16 ] Available from: https://doi.org/10.1016/s0038-1101(99)00191-4

    • Vancouver

      Sonnenberg V, Martino JA. Analysis of transition region and accumulation layer effect in the subthreshold slope in SOI nMOSFETs and their influences on the interface trap density extraction [Internet]. Solid-State Electronics. 1999 ;[citado 2025 nov. 16 ] Available from: https://doi.org/10.1016/s0038-1101(99)00191-4

  • Artigo de periodico

    A simple method for minimizing the transient effect in SOI nMOSFETs at low temperature (1999)

    Sonnenberg, Victor ; Martino, João Antonio

    Source: Electrochemical and Solid-State Letters. Unidade: EP

    Assunto: CIRCUITOS INTEGRADOS MOS

    How to cite
    A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas

    • ABNT

      SONNENBERG, Victor e MARTINO, João Antonio. A simple method for minimizing the transient effect in SOI nMOSFETs at low temperature. Electrochemical and Solid-State Letters, v. 2, n. 11, p. 585-586, 1999Tradução . . Acesso em: 16 nov. 2025.

    • APA

      Sonnenberg, V., & Martino, J. A. (1999). A simple method for minimizing the transient effect in SOI nMOSFETs at low temperature. Electrochemical and Solid-State Letters, 2( 11), 585-586.

    • NLM

      Sonnenberg V, Martino JA. A simple method for minimizing the transient effect in SOI nMOSFETs at low temperature. Electrochemical and Solid-State Letters. 1999 ;2( 11): 585-586.[citado 2025 nov. 16 ]

    • Vancouver

      Sonnenberg V, Martino JA. A simple method for minimizing the transient effect in SOI nMOSFETs at low temperature. Electrochemical and Solid-State Letters. 1999 ;2( 11): 585-586.[citado 2025 nov. 16 ]

  • Artigo de periodico

    Extraction of the oxide charges at the silicon substrate interface in silicon-on-insulator MOSFET's (1999)

    Pavanello, Marcelo Antonio ; Martino, João Antonio

    Source: Solid-State Electronics. Unidade: EP

    Assunto: CIRCUITOS INTEGRADOS MOS

    Acesso à fonteDOIHow to cite
    A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas

    • ABNT

      PAVANELLO, Marcelo Antonio e MARTINO, João Antonio. Extraction of the oxide charges at the silicon substrate interface in silicon-on-insulator MOSFET's. Solid-State Electronics, 1999Tradução . . Disponível em: https://doi.org/10.1016/s0038-1101(99)00178-1. Acesso em: 16 nov. 2025.

    • APA

      Pavanello, M. A., & Martino, J. A. (1999). Extraction of the oxide charges at the silicon substrate interface in silicon-on-insulator MOSFET's. Solid-State Electronics. doi:10.1016/s0038-1101(99)00178-1

    • NLM

      Pavanello MA, Martino JA. Extraction of the oxide charges at the silicon substrate interface in silicon-on-insulator MOSFET's [Internet]. Solid-State Electronics. 1999 ;[citado 2025 nov. 16 ] Available from: https://doi.org/10.1016/s0038-1101(99)00178-1

    • Vancouver

      Pavanello MA, Martino JA. Extraction of the oxide charges at the silicon substrate interface in silicon-on-insulator MOSFET's [Internet]. Solid-State Electronics. 1999 ;[citado 2025 nov. 16 ] Available from: https://doi.org/10.1016/s0038-1101(99)00178-1
  • 1

1 - 3 (3 records)

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