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Artigo de periodico
Low temperature operation of graded-channel SOI nMOSFETs for analog applications (2002)
Pavanello, Marcelo Antonio ; Agopian, Paula Ghedini Der ; Martino, João Antonio ; Flandre, Denis
Fonte: Journal de Physique IV. Unidade: EP
Assunto: CIRCUITOS INTEGRADOS MOS
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
PAVANELLO, Marcelo Antonio et al. Low temperature operation of graded-channel SOI nMOSFETs for analog applications. Journal de Physique IV, v. 12, n. 3, 2002Tradução . . Disponível em: https://doi.org/10.1051/jp420020030. Acesso em: 16 nov. 2025.
APA
Pavanello, M. A., Agopian, P. G. D., Martino, J. A., & Flandre, D. (2002). Low temperature operation of graded-channel SOI nMOSFETs for analog applications. Journal de Physique IV, 12( 3). doi:10.1051/jp420020030
NLM
Pavanello MA, Agopian PGD, Martino JA, Flandre D. Low temperature operation of graded-channel SOI nMOSFETs for analog applications [Internet]. Journal de Physique IV. 2002 ;12( 3):[citado 2025 nov. 16 ] Available from: https://doi.org/10.1051/jp420020030
Vancouver
Pavanello MA, Agopian PGD, Martino JA, Flandre D. Low temperature operation of graded-channel SOI nMOSFETs for analog applications [Internet]. Journal de Physique IV. 2002 ;12( 3):[citado 2025 nov. 16 ] Available from: https://doi.org/10.1051/jp420020030
Artigo de periodico
Low temperature operation of 0.13 µm partially-depleted SOI nMOSFETs with floating body (2002)
Pavanello, Marcelo Antonio ; Martino, João Antonio ; Mercha, A.; Rafi, J.M.; Simoen, Eddy ; Claeys, Cor ; Van Meer, H.; De Meyer, K.
Fonte: Journal de Physique IV. Unidade: EP
Assunto: CIRCUITOS INTEGRADOS MOS
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
PAVANELLO, Marcelo Antonio et al. Low temperature operation of 0.13 µm partially-depleted SOI nMOSFETs with floating body. Journal de Physique IV, v. 12, n. 3, 2002Tradução . . Acesso em: 16 nov. 2025.
APA
Pavanello, M. A., Martino, J. A., Mercha, A., Rafi, J. M., Simoen, E., Claeys, C., et al. (2002). Low temperature operation of 0.13 µm partially-depleted SOI nMOSFETs with floating body. Journal de Physique IV, 12( 3).
NLM
Pavanello MA, Martino JA, Mercha A, Rafi JM, Simoen E, Claeys C, Van Meer H, De Meyer K. Low temperature operation of 0.13 µm partially-depleted SOI nMOSFETs with floating body. Journal de Physique IV. 2002 ;12( 3):[citado 2025 nov. 16 ]
Vancouver
Pavanello MA, Martino JA, Mercha A, Rafi JM, Simoen E, Claeys C, Van Meer H, De Meyer K. Low temperature operation of 0.13 µm partially-depleted SOI nMOSFETs with floating body. Journal de Physique IV. 2002 ;12( 3):[citado 2025 nov. 16 ]
Artigo de periodico
Mobility degradation influence on the SOI MOSFET channel length extraction at 77 K (1996)
Nicolett, Aparecido Sirley; Martino, João Antonio ; Simoen, Eddy ; Claeys, Cor
Fonte: Journal de Physique IV Colloque 3, supplement au Journal de Physique III. Unidade: EP
Assunto: CIRCUITOS INTEGRADOS MOS
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
NICOLETT, Aparecido Sirley et al. Mobility degradation influence on the SOI MOSFET channel length extraction at 77 K. Journal de Physique IV Colloque 3, supplement au Journal de Physique III, v. 6, 1996Tradução . . Acesso em: 16 nov. 2025.
APA
Nicolett, A. S., Martino, J. A., Simoen, E., & Claeys, C. (1996). Mobility degradation influence on the SOI MOSFET channel length extraction at 77 K. Journal de Physique IV Colloque 3, supplement au Journal de Physique III, 6.
NLM
Nicolett AS, Martino JA, Simoen E, Claeys C. Mobility degradation influence on the SOI MOSFET channel length extraction at 77 K. Journal de Physique IV Colloque 3, supplement au Journal de Physique III. 1996 ;6[citado 2025 nov. 16 ]
Vancouver
Nicolett AS, Martino JA, Simoen E, Claeys C. Mobility degradation influence on the SOI MOSFET channel length extraction at 77 K. Journal de Physique IV Colloque 3, supplement au Journal de Physique III. 1996 ;6[citado 2025 nov. 16 ]
Artigo de periodico
Parameter extraction of MOSFETs operated at low temperature (1996)
Simoen, Eddy ; Claeys, Cor ; Martino, João Antonio
Fonte: Journal de Physique IV Colloque 3, supplement au Journal de Physique III. Unidade: EP
Assunto: CIRCUITOS INTEGRADOS MOS
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
SIMOEN, Eddy e CLAEYS, Cor e MARTINO, João Antonio. Parameter extraction of MOSFETs operated at low temperature. Journal de Physique IV Colloque 3, supplement au Journal de Physique III, v. 6, 1996Tradução . . Acesso em: 16 nov. 2025.
APA
Simoen, E., Claeys, C., & Martino, J. A. (1996). Parameter extraction of MOSFETs operated at low temperature. Journal de Physique IV Colloque 3, supplement au Journal de Physique III, 6.
NLM
Simoen E, Claeys C, Martino JA. Parameter extraction of MOSFETs operated at low temperature. Journal de Physique IV Colloque 3, supplement au Journal de Physique III. 1996 ;6[citado 2025 nov. 16 ]
Vancouver
Simoen E, Claeys C, Martino JA. Parameter extraction of MOSFETs operated at low temperature. Journal de Physique IV Colloque 3, supplement au Journal de Physique III. 1996 ;6[citado 2025 nov. 16 ]
Artigo de periodico
Theoretical and experimental study of the substrate effect on the fully depleted SOI MOSFET at low temperatures (1996)
Pavanello, Marcelo Antonio ; Martino, João Antonio ; Colinge, Jean-Pierre
Fonte: Journal de Physique IV Colloque 3, supplement au Journal de Physique III. Unidade: EP
Assunto: CIRCUITOS INTEGRADOS MOS
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
PAVANELLO, Marcelo Antonio e MARTINO, João Antonio e COLINGE, Jean-Pierre. Theoretical and experimental study of the substrate effect on the fully depleted SOI MOSFET at low temperatures. Journal de Physique IV Colloque 3, supplement au Journal de Physique III, v. 6, 1996Tradução . . Acesso em: 16 nov. 2025.
APA
Pavanello, M. A., Martino, J. A., & Colinge, J. -P. (1996). Theoretical and experimental study of the substrate effect on the fully depleted SOI MOSFET at low temperatures. Journal de Physique IV Colloque 3, supplement au Journal de Physique III, 6.
NLM
Pavanello MA, Martino JA, Colinge J-P. Theoretical and experimental study of the substrate effect on the fully depleted SOI MOSFET at low temperatures. Journal de Physique IV Colloque 3, supplement au Journal de Physique III. 1996 ;6[citado 2025 nov. 16 ]
Vancouver
Pavanello MA, Martino JA, Colinge J-P. Theoretical and experimental study of the substrate effect on the fully depleted SOI MOSFET at low temperatures. Journal de Physique IV Colloque 3, supplement au Journal de Physique III. 1996 ;6[citado 2025 nov. 16 ]

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