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Artigo de periodico
SOI technology characterization using SOI-MOS capacitor (2005)
Sonnenberg, Victor ; Martino, João Antonio
Source: Solid-State Electronics. Unidade: EP
Assunto: CIRCUITOS INTEGRADOS MOS
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
SONNENBERG, Victor e MARTINO, João Antonio. SOI technology characterization using SOI-MOS capacitor. Solid-State Electronics, 2005Tradução . . Disponível em: https://doi.org/10.1016/j.sse.2004.06.010. Acesso em: 16 nov. 2025.
APA
Sonnenberg, V., & Martino, J. A. (2005). SOI technology characterization using SOI-MOS capacitor. Solid-State Electronics. doi:10.1016/j.sse.2004.06.010
NLM
Sonnenberg V, Martino JA. SOI technology characterization using SOI-MOS capacitor [Internet]. Solid-State Electronics. 2005 ;[citado 2025 nov. 16 ] Available from: https://doi.org/10.1016/j.sse.2004.06.010
Vancouver
Sonnenberg V, Martino JA. SOI technology characterization using SOI-MOS capacitor [Internet]. Solid-State Electronics. 2005 ;[citado 2025 nov. 16 ] Available from: https://doi.org/10.1016/j.sse.2004.06.010
Artigo de periodico
Analysis of transition region and accumulation layer effect in the subthreshold slope in SOI nMOSFETs and their influences on the interface trap density extraction (1999)
Sonnenberg, Victor ; Martino, João Antonio
Source: Solid-State Electronics. Unidade: EP
Assunto: CIRCUITOS INTEGRADOS MOS
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
SONNENBERG, Victor e MARTINO, João Antonio. Analysis of transition region and accumulation layer effect in the subthreshold slope in SOI nMOSFETs and their influences on the interface trap density extraction. Solid-State Electronics, 1999Tradução . . Disponível em: https://doi.org/10.1016/s0038-1101(99)00191-4. Acesso em: 16 nov. 2025.
APA
Sonnenberg, V., & Martino, J. A. (1999). Analysis of transition region and accumulation layer effect in the subthreshold slope in SOI nMOSFETs and their influences on the interface trap density extraction. Solid-State Electronics. doi:10.1016/s0038-1101(99)00191-4
NLM
Sonnenberg V, Martino JA. Analysis of transition region and accumulation layer effect in the subthreshold slope in SOI nMOSFETs and their influences on the interface trap density extraction [Internet]. Solid-State Electronics. 1999 ;[citado 2025 nov. 16 ] Available from: https://doi.org/10.1016/s0038-1101(99)00191-4
Vancouver
Sonnenberg V, Martino JA. Analysis of transition region and accumulation layer effect in the subthreshold slope in SOI nMOSFETs and their influences on the interface trap density extraction [Internet]. Solid-State Electronics. 1999 ;[citado 2025 nov. 16 ] Available from: https://doi.org/10.1016/s0038-1101(99)00191-4
Artigo de periodico
A simple method for minimizing the transient effect in SOI nMOSFETs at low temperature (1999)
Sonnenberg, Victor ; Martino, João Antonio
Source: Electrochemical and Solid-State Letters. Unidade: EP
Assunto: CIRCUITOS INTEGRADOS MOS
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
SONNENBERG, Victor e MARTINO, João Antonio. A simple method for minimizing the transient effect in SOI nMOSFETs at low temperature. Electrochemical and Solid-State Letters, v. 2, n. 11, p. 585-586, 1999Tradução . . Acesso em: 16 nov. 2025.
APA
Sonnenberg, V., & Martino, J. A. (1999). A simple method for minimizing the transient effect in SOI nMOSFETs at low temperature. Electrochemical and Solid-State Letters, 2( 11), 585-586.
NLM
Sonnenberg V, Martino JA. A simple method for minimizing the transient effect in SOI nMOSFETs at low temperature. Electrochemical and Solid-State Letters. 1999 ;2( 11): 585-586.[citado 2025 nov. 16 ]
Vancouver
Sonnenberg V, Martino JA. A simple method for minimizing the transient effect in SOI nMOSFETs at low temperature. Electrochemical and Solid-State Letters. 1999 ;2( 11): 585-586.[citado 2025 nov. 16 ]

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