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Artigo de periodico
Magnetic field effect on diffusion of photogenerated holes in a mesoscopic GaAs channel (2024)
Pusep, Yuri A. ; Teodoro, Marcio Daldin ; Patricio, Marco Antonio Tito ; Jacobsen, Gabriel Marques ; Gusev, Gennady ; Bakarov, Askhat
Source: Physical Review B. Unidades: IFSC, IF
Subjects: POÇOS QUÂNTICOS, SEMICONDUTORES, CAMPO MAGNÉTICO, FÍSICA MODERNA
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ABNT
PUSEP, Yuri A. et al. Magnetic field effect on diffusion of photogenerated holes in a mesoscopic GaAs channel. Physical Review B, v. 109, n. 7, p. 075429-1-075429-6, 2024Tradução . . Disponível em: https://doi.org/10.1103/PhysRevB.109.075429. Acesso em: 09 set. 2024.
APA
Pusep, Y. A., Teodoro, M. D., Patricio, M. A. T., Jacobsen, G. M., Gusev, G., & Bakarov, A. (2024). Magnetic field effect on diffusion of photogenerated holes in a mesoscopic GaAs channel. Physical Review B, 109( 7), 075429-1-075429-6. doi:10.1103/PhysRevB.109.075429
NLM
Pusep YA, Teodoro MD, Patricio MAT, Jacobsen GM, Gusev G, Bakarov A. Magnetic field effect on diffusion of photogenerated holes in a mesoscopic GaAs channel [Internet]. Physical Review B. 2024 ; 109( 7): 075429-1-075429-6.[citado 2024 set. 09 ] Available from: https://doi.org/10.1103/PhysRevB.109.075429
Vancouver
Pusep YA, Teodoro MD, Patricio MAT, Jacobsen GM, Gusev G, Bakarov A. Magnetic field effect on diffusion of photogenerated holes in a mesoscopic GaAs channel [Internet]. Physical Review B. 2024 ; 109( 7): 075429-1-075429-6.[citado 2024 set. 09 ] Available from: https://doi.org/10.1103/PhysRevB.109.075429
Artigo de periodico
Driven electron g-factor anisotropy in layered III–V semiconductors: interfacing, tunnel coupling, and structure inversion asymmetry effects (2024)
Sandoval, Marcelo Alejandro Toloza ; Padilla, Jhon Elber Leon ; Wanderley, Adilson Barros ; Sipahi, Guilherme Matos ; Chubaci, José Fernando Diniz ; Silva, Antonio Ferreira da
Source: Journal of Applied Physics. Unidades: IFSC, IF
Subjects: APRENDIZADO COMPUTACIONAL, SEMICONDUTORES
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ABNT
SANDOVAL, Marcelo Alejandro Toloza et al. Driven electron g-factor anisotropy in layered III–V semiconductors: interfacing, tunnel coupling, and structure inversion asymmetry effects. Journal of Applied Physics, v. 135, n. 10, p. 103901-1-103901-9, 2024Tradução . . Disponível em: https://doi.org/10.1063/5.0187962. Acesso em: 09 set. 2024.
APA
Sandoval, M. A. T., Padilla, J. E. L., Wanderley, A. B., Sipahi, G. M., Chubaci, J. F. D., & Silva, A. F. da. (2024). Driven electron g-factor anisotropy in layered III–V semiconductors: interfacing, tunnel coupling, and structure inversion asymmetry effects. Journal of Applied Physics, 135( 10), 103901-1-103901-9. doi:10.1063/5.0187962
NLM
Sandoval MAT, Padilla JEL, Wanderley AB, Sipahi GM, Chubaci JFD, Silva AF da. Driven electron g-factor anisotropy in layered III–V semiconductors: interfacing, tunnel coupling, and structure inversion asymmetry effects [Internet]. Journal of Applied Physics. 2024 ; 135( 10): 103901-1-103901-9.[citado 2024 set. 09 ] Available from: https://doi.org/10.1063/5.0187962
Vancouver
Sandoval MAT, Padilla JEL, Wanderley AB, Sipahi GM, Chubaci JFD, Silva AF da. Driven electron g-factor anisotropy in layered III–V semiconductors: interfacing, tunnel coupling, and structure inversion asymmetry effects [Internet]. Journal of Applied Physics. 2024 ; 135( 10): 103901-1-103901-9.[citado 2024 set. 09 ] Available from: https://doi.org/10.1063/5.0187962
Artigo de periodico
Magnetic field breakdown of electron hydrodynamics (2024)
Patricio, Marco Antonio Tito ; Jacobsen, Gabriel Marques ; Oliveira, Vinicius Andrade de ; Teodoro, Marcio Daldin ; Gusev, Gennady ; Bakarov, Askhat ; Pusep, Yuri A.
Source: Physical Review B. Unidades: IF, IFSC
Subjects: FOTOLUMINESCÊNCIA, CAMPO ELETROMAGNÉTICO, SEMICONDUTORES
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ABNT
PATRICIO, Marco Antonio Tito et al. Magnetic field breakdown of electron hydrodynamics. Physical Review B, v. 110, n. 4, p. 45411-1-45411-5, 2024Tradução . . Disponível em: https://doi.org/10.1103/PhysRevB.110.045411. Acesso em: 09 set. 2024.
APA
Patricio, M. A. T., Jacobsen, G. M., Oliveira, V. A. de, Teodoro, M. D., Gusev, G., Bakarov, A., & Pusep, Y. A. (2024). Magnetic field breakdown of electron hydrodynamics. Physical Review B, 110( 4), 45411-1-45411-5. doi:10.1103/PhysRevB.110.045411
NLM
Patricio MAT, Jacobsen GM, Oliveira VA de, Teodoro MD, Gusev G, Bakarov A, Pusep YA. Magnetic field breakdown of electron hydrodynamics [Internet]. Physical Review B. 2024 ; 110( 4): 45411-1-45411-5.[citado 2024 set. 09 ] Available from: https://doi.org/10.1103/PhysRevB.110.045411
Vancouver
Patricio MAT, Jacobsen GM, Oliveira VA de, Teodoro MD, Gusev G, Bakarov A, Pusep YA. Magnetic field breakdown of electron hydrodynamics [Internet]. Physical Review B. 2024 ; 110( 4): 45411-1-45411-5.[citado 2024 set. 09 ] Available from: https://doi.org/10.1103/PhysRevB.110.045411
Artigo de periodico
Hydrodynamics of electron-hole fluid photogenerated in a mesoscopic two-dimensional channel (2024)
Patricio, Marco Antonio Tito ; Jacobsen, Gabriel Marques ; Teodoro, Marcio Daldin ; Gusev, Gennady ; Bakarov, Askhat ; Pusep, Yuri A.
Source: Physical Review B. Unidades: IF, IFSC
Subjects: POÇOS QUÂNTICOS, SEMICONDUTORES, CAMPO MAGNÉTICO
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ABNT
PATRICIO, Marco Antonio Tito et al. Hydrodynamics of electron-hole fluid photogenerated in a mesoscopic two-dimensional channel. Physical Review B, v. 109, n. 12, p. L121401-1-L121401-6, 2024Tradução . . Disponível em: https://doi.org/10.1103/PhysRevB.109.L121401. Acesso em: 09 set. 2024.
APA
Patricio, M. A. T., Jacobsen, G. M., Teodoro, M. D., Gusev, G., Bakarov, A., & Pusep, Y. A. (2024). Hydrodynamics of electron-hole fluid photogenerated in a mesoscopic two-dimensional channel. Physical Review B, 109( 12), L121401-1-L121401-6. doi:10.1103/PhysRevB.109.L121401
NLM
Patricio MAT, Jacobsen GM, Teodoro MD, Gusev G, Bakarov A, Pusep YA. Hydrodynamics of electron-hole fluid photogenerated in a mesoscopic two-dimensional channel [Internet]. Physical Review B. 2024 ; 109( 12): L121401-1-L121401-6.[citado 2024 set. 09 ] Available from: https://doi.org/10.1103/PhysRevB.109.L121401
Vancouver
Patricio MAT, Jacobsen GM, Teodoro MD, Gusev G, Bakarov A, Pusep YA. Hydrodynamics of electron-hole fluid photogenerated in a mesoscopic two-dimensional channel [Internet]. Physical Review B. 2024 ; 109( 12): L121401-1-L121401-6.[citado 2024 set. 09 ] Available from: https://doi.org/10.1103/PhysRevB.109.L121401
Artigo de periodico
Multifractal conductance fluctuations of helical edge states (2023)
Olshanetsky, E. B.; Gusev, Gennady ; Levine, Alexandre ; Kvon, Z. D.; Armand, Johnnier Perez
Source: Physical Review Letters. Unidade: IF
Assunto: SEMICONDUTORES
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ABNT
OLSHANETSKY, E. B. et al. Multifractal conductance fluctuations of helical edge states. Physical Review Letters, v. 131, n. 7, p. 076301, 2023Tradução . . Disponível em: https://doi.org/10.1103/PhysRevLett.131.076301. Acesso em: 09 set. 2024.
APA
Olshanetsky, E. B., Gusev, G., Levine, A., Kvon, Z. D., & Armand, J. P. (2023). Multifractal conductance fluctuations of helical edge states. Physical Review Letters, 131( 7), 076301. doi:10.1103/PhysRevLett.131.076301
NLM
Olshanetsky EB, Gusev G, Levine A, Kvon ZD, Armand JP. Multifractal conductance fluctuations of helical edge states [Internet]. Physical Review Letters. 2023 ; 131( 7): 076301.[citado 2024 set. 09 ] Available from: https://doi.org/10.1103/PhysRevLett.131.076301
Vancouver
Olshanetsky EB, Gusev G, Levine A, Kvon ZD, Armand JP. Multifractal conductance fluctuations of helical edge states [Internet]. Physical Review Letters. 2023 ; 131( 7): 076301.[citado 2024 set. 09 ] Available from: https://doi.org/10.1103/PhysRevLett.131.076301
Trabalho de evento
On the importance of atom probe tomography for the development of new nanoscale devices (2022)
Santos, Thales Borrely dos ; Huang, Tao-Yu; Yang, Yu-Chen; Goldman, Rachel S; Quivy, Alain André
Conference titles: Symposium on Microelectronics Technology and Devices (SBMicro). Unidade: IF
Subjects: TOMOGRAFIA, SEMICONDUTORES
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ABNT
SANTOS, Thales Borrely dos et al. On the importance of atom probe tomography for the development of new nanoscale devices. 2022, Anais.. New York: IEEE, 2022. Disponível em: https://doi.org/10.1109/SBMICRO55822.2022.9881039. Acesso em: 09 set. 2024.
APA
Santos, T. B. dos, Huang, T. -Y., Yang, Y. -C., Goldman, R. S., & Quivy, A. A. (2022). On the importance of atom probe tomography for the development of new nanoscale devices. In . New York: IEEE. doi:10.1109/SBMICRO55822.2022.9881039
NLM
Santos TB dos, Huang T-Y, Yang Y-C, Goldman RS, Quivy AA. On the importance of atom probe tomography for the development of new nanoscale devices [Internet]. 2022 ;[citado 2024 set. 09 ] Available from: https://doi.org/10.1109/SBMICRO55822.2022.9881039
Vancouver
Santos TB dos, Huang T-Y, Yang Y-C, Goldman RS, Quivy AA. On the importance of atom probe tomography for the development of new nanoscale devices [Internet]. 2022 ;[citado 2024 set. 09 ] Available from: https://doi.org/10.1109/SBMICRO55822.2022.9881039
Artigo de periodico
Charge deposition analysis of heavy-ion-induced single-event burnout in low-voltage power VDMOSFET (2022)
Alberton, S. G. ; Aguiar, Vitor^Ângelo Paulino de ; Medina, Nilberto H. ; Added, Nemitala ; Macchione, E L A ; Menegasso, R. ; Cesário, G. J.; Santos, Hellen Cristine ; Scarduelli, V B ; Alcántara-Núñez, J. A.; Guazzelli, M. A.; Santos, R. B. B.; Flechas, D.
Source: Microelectronics Reliability. Unidade: IF
Subjects: FÍSICA NUCLEAR, ÍONS PESADOS, SEMICONDUTORES
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ABNT
ALBERTON, S. G. et al. Charge deposition analysis of heavy-ion-induced single-event burnout in low-voltage power VDMOSFET. Microelectronics Reliability, v. 137, 2022Tradução . . Disponível em: https://doi.org/10.1016/j.microrel.2022.114784. Acesso em: 09 set. 2024.
APA
Alberton, S. G., Aguiar, V. ^Â. P. de, Medina, N. H., Added, N., Macchione, E. L. A., Menegasso, R., et al. (2022). Charge deposition analysis of heavy-ion-induced single-event burnout in low-voltage power VDMOSFET. Microelectronics Reliability, 137. doi:10.1016/j.microrel.2022.114784
NLM
Alberton SG, Aguiar V^ÂP de, Medina NH, Added N, Macchione ELA, Menegasso R, Cesário GJ, Santos HC, Scarduelli VB, Alcántara-Núñez JA, Guazzelli MA, Santos RBB, Flechas D. Charge deposition analysis of heavy-ion-induced single-event burnout in low-voltage power VDMOSFET [Internet]. Microelectronics Reliability. 2022 ; 137[citado 2024 set. 09 ] Available from: https://doi.org/10.1016/j.microrel.2022.114784
Vancouver
Alberton SG, Aguiar V^ÂP de, Medina NH, Added N, Macchione ELA, Menegasso R, Cesário GJ, Santos HC, Scarduelli VB, Alcántara-Núñez JA, Guazzelli MA, Santos RBB, Flechas D. Charge deposition analysis of heavy-ion-induced single-event burnout in low-voltage power VDMOSFET [Internet]. Microelectronics Reliability. 2022 ; 137[citado 2024 set. 09 ] Available from: https://doi.org/10.1016/j.microrel.2022.114784
Artigo de periodico
Insights into the aftereffects phenomenon in solids based on DFT and time-differential perturbed γ−γ angular correlation studies in 111In (→ 111Cd)-doped tin oxides (2022)
Darriba, G N ; Muñoz, Emiliano L ; Richard, Diego ; Ayala, Alejandro Pedro ; Carbonari, A W ; Petrilli, Helena Maria ; Renteria, M
Source: Physical Review B. Unidade: IF
Assunto: SEMICONDUTORES
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ABNT
DARRIBA, G N et al. Insights into the aftereffects phenomenon in solids based on DFT and time-differential perturbed γ−γ angular correlation studies in 111In (→ 111Cd)-doped tin oxides. Physical Review B, v. 105, 2022Tradução . . Disponível em: https://doi.org/10.1103/PhysRevB.105.195201. Acesso em: 09 set. 2024.
APA
Darriba, G. N., Muñoz, E. L., Richard, D., Ayala, A. P., Carbonari, A. W., Petrilli, H. M., & Renteria, M. (2022). Insights into the aftereffects phenomenon in solids based on DFT and time-differential perturbed γ−γ angular correlation studies in 111In (→ 111Cd)-doped tin oxides. Physical Review B, 105. doi:10.1103/PhysRevB.105.195201
NLM
Darriba GN, Muñoz EL, Richard D, Ayala AP, Carbonari AW, Petrilli HM, Renteria M. Insights into the aftereffects phenomenon in solids based on DFT and time-differential perturbed γ−γ angular correlation studies in 111In (→ 111Cd)-doped tin oxides [Internet]. Physical Review B. 2022 ; 105[citado 2024 set. 09 ] Available from: https://doi.org/10.1103/PhysRevB.105.195201
Vancouver
Darriba GN, Muñoz EL, Richard D, Ayala AP, Carbonari AW, Petrilli HM, Renteria M. Insights into the aftereffects phenomenon in solids based on DFT and time-differential perturbed γ−γ angular correlation studies in 111In (→ 111Cd)-doped tin oxides [Internet]. Physical Review B. 2022 ; 105[citado 2024 set. 09 ] Available from: https://doi.org/10.1103/PhysRevB.105.195201
Artigo de periodico
Excitonic effects in graphene-like C3N (2022)
Bonacci, Miki ; Zanfrognini, Matteo ; Molinari, Elisa ; Ruini, Alice; Caldas Marilia Junqueira ; Ferretti, Andrea ; Varsano, Daniele
Source: Physical Review Materials. Unidade: IF
Assunto: SEMICONDUTORES
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ABNT
BONACCI, Miki et al. Excitonic effects in graphene-like C3N. Physical Review Materials, v. 6, n. 3, 2022Tradução . . Disponível em: https://doi.org/10.1103/PhysRevMaterials.6.034009. Acesso em: 09 set. 2024.
APA
Bonacci, M., Zanfrognini, M., Molinari, E., Ruini, A., Caldas Marilia Junqueira,, Ferretti, A., & Varsano, D. (2022). Excitonic effects in graphene-like C3N. Physical Review Materials, 6( 3). doi:10.1103/PhysRevMaterials.6.034009
NLM
Bonacci M, Zanfrognini M, Molinari E, Ruini A, Caldas Marilia Junqueira, Ferretti A, Varsano D. Excitonic effects in graphene-like C3N [Internet]. Physical Review Materials. 2022 ; 6( 3):[citado 2024 set. 09 ] Available from: https://doi.org/10.1103/PhysRevMaterials.6.034009
Vancouver
Bonacci M, Zanfrognini M, Molinari E, Ruini A, Caldas Marilia Junqueira, Ferretti A, Varsano D. Excitonic effects in graphene-like C3N [Internet]. Physical Review Materials. 2022 ; 6( 3):[citado 2024 set. 09 ] Available from: https://doi.org/10.1103/PhysRevMaterials.6.034009
Artigo de periodico
A low-cost small-size commercial PIN photodiode: I. Electrical characterisation and low-energy photon spectrometry (2021)
Malafronte, A. A.; Petri, A. R.; Gonçalves, J. A. C.; Barros, Suelen ; Bueno, Carmen ; Maidana, Nora Lía ; Mangiarotti, A. ; Martins, Marcos ; Quivy, Alain André ; Vanin, Vito
Source: Radiation Physics and Chemistry. Unidades: IF, IPEN
Subjects: FOTODETECTORES, SEMICONDUTORES, DIODOS, ESPECTROSCOPIA DE RAIO GAMA, ESPECTROSCOPIA DE RAIO X, SILÍCIO
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ABNT
MALAFRONTE, A. A. et al. A low-cost small-size commercial PIN photodiode: I. Electrical characterisation and low-energy photon spectrometry. Radiation Physics and Chemistry, v. 179, 2021Tradução . . Disponível em: https://doi.org/10.1016/j.radphyschem.2020.109103. Acesso em: 09 set. 2024.
APA
Malafronte, A. A., Petri, A. R., Gonçalves, J. A. C., Barros, S., Bueno, C., Maidana, N. L., et al. (2021). A low-cost small-size commercial PIN photodiode: I. Electrical characterisation and low-energy photon spectrometry. Radiation Physics and Chemistry, 179. doi:10.1016/j.radphyschem.2020.109103
NLM
Malafronte AA, Petri AR, Gonçalves JAC, Barros S, Bueno C, Maidana NL, Mangiarotti A, Martins M, Quivy AA, Vanin V. A low-cost small-size commercial PIN photodiode: I. Electrical characterisation and low-energy photon spectrometry [Internet]. Radiation Physics and Chemistry. 2021 ; 179[citado 2024 set. 09 ] Available from: https://doi.org/10.1016/j.radphyschem.2020.109103
Vancouver
Malafronte AA, Petri AR, Gonçalves JAC, Barros S, Bueno C, Maidana NL, Mangiarotti A, Martins M, Quivy AA, Vanin V. A low-cost small-size commercial PIN photodiode: I. Electrical characterisation and low-energy photon spectrometry [Internet]. Radiation Physics and Chemistry. 2021 ; 179[citado 2024 set. 09 ] Available from: https://doi.org/10.1016/j.radphyschem.2020.109103
Artigo de periodico
Development of high-current power supplies for the TCABR tokamak (2020)
Santos, A. O.; Komatsu, Wilson ; Canal, Gustavo Paganini ; Severo, Jose Helder F. ; Sá, W. P. de; Kassab Junior, Fuad ; Ferreira, J. G.; Andrade, M. C. R. de; Piqueira, José Roberto Castilho ; Nascimento, Ivan Cunha ; Galvão, R. M. O.
Source: Fusion Engineering and Design. Unidades: EP, IF
Subjects: FÍSICA DE PLASMAS, FUSÃO NUCLEAR, TOKAMAKS, ELETRÔNICA DE POTÊNCIA, TRANSISTORES, SEMICONDUTORES, BOBINAS ELÉTRICAS, PLASMA (MICROELETRÔNICA)
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ABNT
SANTOS, A. O. et al. Development of high-current power supplies for the TCABR tokamak. Fusion Engineering and Design, v. 159, 2020Tradução . . Disponível em: https://doi.org/10.1016/j.fusengdes.2020.111698. Acesso em: 09 set. 2024.
APA
Santos, A. O., Komatsu, W., Canal, G. P., Severo, J. H. F., Sá, W. P. de, Kassab Junior, F., et al. (2020). Development of high-current power supplies for the TCABR tokamak. Fusion Engineering and Design, 159. doi:10.1016/j.fusengdes.2020.111698
NLM
Santos AO, Komatsu W, Canal GP, Severo JHF, Sá WP de, Kassab Junior F, Ferreira JG, Andrade MCR de, Piqueira JRC, Nascimento IC, Galvão RMO. Development of high-current power supplies for the TCABR tokamak [Internet]. Fusion Engineering and Design. 2020 ; 159[citado 2024 set. 09 ] Available from: https://doi.org/10.1016/j.fusengdes.2020.111698
Vancouver
Santos AO, Komatsu W, Canal GP, Severo JHF, Sá WP de, Kassab Junior F, Ferreira JG, Andrade MCR de, Piqueira JRC, Nascimento IC, Galvão RMO. Development of high-current power supplies for the TCABR tokamak [Internet]. Fusion Engineering and Design. 2020 ; 159[citado 2024 set. 09 ] Available from: https://doi.org/10.1016/j.fusengdes.2020.111698
Artigo de periodico
Magnetic and power tuning of spin-asymmetric multiple excitons in a GaAs quantum well (2020)
Naranjo, A.; Bragança, H.; Jacobsen, G. M.; Morais, R. R. O. de; Quivy, Alain André ; Marques, G. E.; Lopez-Richard, V.; Teodoro, M. D.
Source: Physica E: Low-dimensional Systems and Nanostructures. Unidade: IF
Subjects: FÍSICA MODERNA, NANOTECNOLOGIA, SEMICONDUTORES, POÇOS QUÂNTICOS, FOTOLUMINESCÊNCIA, SPIN, ASSIMETRIA
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NARANJO, A. et al. Magnetic and power tuning of spin-asymmetric multiple excitons in a GaAs quantum well. Physica E: Low-dimensional Systems and Nanostructures, 2020Tradução . . Disponível em: https://doi.org/10.1016/j.physe.2020.114599. Acesso em: 09 set. 2024.
APA
Naranjo, A., Bragança, H., Jacobsen, G. M., Morais, R. R. O. de, Quivy, A. A., Marques, G. E., et al. (2020). Magnetic and power tuning of spin-asymmetric multiple excitons in a GaAs quantum well. Physica E: Low-dimensional Systems and Nanostructures. doi:10.1016/j.physe.2020.114599
NLM
Naranjo A, Bragança H, Jacobsen GM, Morais RRO de, Quivy AA, Marques GE, Lopez-Richard V, Teodoro MD. Magnetic and power tuning of spin-asymmetric multiple excitons in a GaAs quantum well [Internet]. Physica E: Low-dimensional Systems and Nanostructures. 2020 ;[citado 2024 set. 09 ] Available from: https://doi.org/10.1016/j.physe.2020.114599
Vancouver
Naranjo A, Bragança H, Jacobsen GM, Morais RRO de, Quivy AA, Marques GE, Lopez-Richard V, Teodoro MD. Magnetic and power tuning of spin-asymmetric multiple excitons in a GaAs quantum well [Internet]. Physica E: Low-dimensional Systems and Nanostructures. 2020 ;[citado 2024 set. 09 ] Available from: https://doi.org/10.1016/j.physe.2020.114599
Artigo de periodico
Effects of microstructure on the magnetic properties of polycrystalline NiMn2O4 spinel oxides (2019)
Cabral, A J Freitas; Remedios, C M R; Gratens, Xavier Pierre Marie; Chitta, Valmir Antonio
Source: Journal of Magnetism and Magnetic Materials. Unidade: IF
Subjects: SEMICONDUTORES, ESTRUTURA DOS MATERIAIS, PROPRIEDADES DOS MATERIAIS
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ABNT
CABRAL, A J Freitas et al. Effects of microstructure on the magnetic properties of polycrystalline NiMn2O4 spinel oxides. Journal of Magnetism and Magnetic Materials, v. 469, p. 108-112, 2019Tradução . . Disponível em: https://doi.org/10.1016/j.jmmm.2018.08.051. Acesso em: 09 set. 2024.
APA
Cabral, A. J. F., Remedios, C. M. R., Gratens, X. P. M., & Chitta, V. A. (2019). Effects of microstructure on the magnetic properties of polycrystalline NiMn2O4 spinel oxides. Journal of Magnetism and Magnetic Materials, 469, 108-112. doi:10.1016/j.jmmm.2018.08.051
NLM
Cabral AJF, Remedios CMR, Gratens XPM, Chitta VA. Effects of microstructure on the magnetic properties of polycrystalline NiMn2O4 spinel oxides [Internet]. Journal of Magnetism and Magnetic Materials. 2019 ; 469 108-112.[citado 2024 set. 09 ] Available from: https://doi.org/10.1016/j.jmmm.2018.08.051
Vancouver
Cabral AJF, Remedios CMR, Gratens XPM, Chitta VA. Effects of microstructure on the magnetic properties of polycrystalline NiMn2O4 spinel oxides [Internet]. Journal of Magnetism and Magnetic Materials. 2019 ; 469 108-112.[citado 2024 set. 09 ] Available from: https://doi.org/10.1016/j.jmmm.2018.08.051
Artigo de periodico
Tailoring optical properties and stimulated emission in nanostructured polythiophene (2019)
Portone, Alberto; Ganzer, Lucia; Branchi , Federico; Ramos, Rodrigo; Caldas, Marilia Junqueira; Pisignano, Dario; Molinari, Elisa; Cerullo, Giulio; Persano, Luana; Prezzi, Deborah; Virgili, Tersilla
Source: Scientific Reports. Unidade: IF
Subjects: FÍSICA DA MATÉRIA CONDENSADA, ESTRUTURA ELETRÔNICA, MATERIAIS NANOESTRUTURADOS, POLÍMEROS (QUÍMICA ORGÂNICA), SEMICONDUTORES, FÍSICO-QUÍMICA
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ABNT
PORTONE, Alberto et al. Tailoring optical properties and stimulated emission in nanostructured polythiophene. Scientific Reports, v. 9, n. 7370, 2019Tradução . . Disponível em: https://doi-org.ez67.periodicos.capes.gov.br/10.1038/s41598-019-43719-0. Acesso em: 09 set. 2024.
APA
Portone, A., Ganzer, L., Branchi , F., Ramos, R., Caldas, M. J., Pisignano, D., et al. (2019). Tailoring optical properties and stimulated emission in nanostructured polythiophene. Scientific Reports, 9( 7370). doi:10.1038/s41598-019-43719-0
NLM
Portone A, Ganzer L, Branchi F, Ramos R, Caldas MJ, Pisignano D, Molinari E, Cerullo G, Persano L, Prezzi D, Virgili T. Tailoring optical properties and stimulated emission in nanostructured polythiophene [Internet]. Scientific Reports. 2019 ; 9( 7370):[citado 2024 set. 09 ] Available from: https://doi-org.ez67.periodicos.capes.gov.br/10.1038/s41598-019-43719-0
Vancouver
Portone A, Ganzer L, Branchi F, Ramos R, Caldas MJ, Pisignano D, Molinari E, Cerullo G, Persano L, Prezzi D, Virgili T. Tailoring optical properties and stimulated emission in nanostructured polythiophene [Internet]. Scientific Reports. 2019 ; 9( 7370):[citado 2024 set. 09 ] Available from: https://doi-org.ez67.periodicos.capes.gov.br/10.1038/s41598-019-43719-0
Artigo de periodico
Thermally activated delayed fluorescence mediated through the upper triplet state manifold in non-charge-transfer star-shaped triphenylamine–carbazole molecules (2018)
Pander, Piotr; Etherington, Marc K.; Monkman, Andrew P.; Motyka, Radoslaw; Zassowski, Pawel; Varsano, Daniele; Data, Przemyslaw; Silva, Tales José da; Caldas, Marília Junqueira
Source: Journal of Physical Chemistry C. Unidade: IF
Subjects: ESTRUTURA ELETRÔNICA, SEMICONDUTORES
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
PANDER, Piotr et al. Thermally activated delayed fluorescence mediated through the upper triplet state manifold in non-charge-transfer star-shaped triphenylamine–carbazole molecules. Journal of Physical Chemistry C, v. 122, n. 42, p. 23934-23942, 2018Tradução . . Disponível em: https://doi.org/10.1021/acs.jpcc.8b07510. Acesso em: 09 set. 2024.
APA
Pander, P., Etherington, M. K., Monkman, A. P., Motyka, R., Zassowski, P., Varsano, D., et al. (2018). Thermally activated delayed fluorescence mediated through the upper triplet state manifold in non-charge-transfer star-shaped triphenylamine–carbazole molecules. Journal of Physical Chemistry C, 122( 42), 23934-23942. doi:10.1021/acs.jpcc.8b07510
NLM
Pander P, Etherington MK, Monkman AP, Motyka R, Zassowski P, Varsano D, Data P, Silva TJ da, Caldas MJ. Thermally activated delayed fluorescence mediated through the upper triplet state manifold in non-charge-transfer star-shaped triphenylamine–carbazole molecules [Internet]. Journal of Physical Chemistry C. 2018 ; 122( 42): 23934-23942.[citado 2024 set. 09 ] Available from: https://doi.org/10.1021/acs.jpcc.8b07510
Vancouver
Pander P, Etherington MK, Monkman AP, Motyka R, Zassowski P, Varsano D, Data P, Silva TJ da, Caldas MJ. Thermally activated delayed fluorescence mediated through the upper triplet state manifold in non-charge-transfer star-shaped triphenylamine–carbazole molecules [Internet]. Journal of Physical Chemistry C. 2018 ; 122( 42): 23934-23942.[citado 2024 set. 09 ] Available from: https://doi.org/10.1021/acs.jpcc.8b07510
Artigo de periodico
Novel near field detector for three-dimensional X-ray diffraction microscopy (2018)
Annett, Scott; Kycia, Stefan; Dale, Darren; Morelhao, Sergio Luiz
Source: MRS Advances. Unidade: IF
Subjects: DIFRAÇÃO POR RAIOS X, SEMICONDUTORES, CRISTALOGRAFIA DE RAIOS X
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
ANNETT, Scott et al. Novel near field detector for three-dimensional X-ray diffraction microscopy. MRS Advances, v. 3, n. ju 2018, p. 2341-2346, 2018Tradução . . Disponível em: https://doi.org/10.1557/adv.2018.487. Acesso em: 09 set. 2024.
APA
Annett, S., Kycia, S., Dale, D., & Morelhao, S. L. (2018). Novel near field detector for three-dimensional X-ray diffraction microscopy. MRS Advances, 3( ju 2018), 2341-2346. doi:10.1557/adv.2018.487
NLM
Annett S, Kycia S, Dale D, Morelhao SL. Novel near field detector for three-dimensional X-ray diffraction microscopy [Internet]. MRS Advances. 2018 ; 3( ju 2018): 2341-2346.[citado 2024 set. 09 ] Available from: https://doi.org/10.1557/adv.2018.487
Vancouver
Annett S, Kycia S, Dale D, Morelhao SL. Novel near field detector for three-dimensional X-ray diffraction microscopy [Internet]. MRS Advances. 2018 ; 3( ju 2018): 2341-2346.[citado 2024 set. 09 ] Available from: https://doi.org/10.1557/adv.2018.487
Artigo de periodico
Structural defects and electronic phase diagram of topological insulator bismuth telluride epitaxial films (2018)
Fornari, C. I; Rappl, P. H. O.; Fornari, G.; Travelho, J. S.; Castro, S. de; Pirralho, M. J. P.; Pena, F. S.; Peres, M. L.; Abramof, E.; Morelhao, Sergio Luiz
Source: Materials Research Express. Unidade: IF
Subjects: DIFRAÇÃO POR RAIOS X, SEMICONDUTORES, CRISTALOGRAFIA DE RAIOS X
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
FORNARI, C. I et al. Structural defects and electronic phase diagram of topological insulator bismuth telluride epitaxial films. Materials Research Express, v. no 2018, n. 11, p. 116410, 2018Tradução . . Disponível em: http://iopscience.iop.org/article/10.1088/2053-1591/aadeb7. Acesso em: 09 set. 2024.
APA
Fornari, C. I., Rappl, P. H. O., Fornari, G., Travelho, J. S., Castro, S. de, Pirralho, M. J. P., et al. (2018). Structural defects and electronic phase diagram of topological insulator bismuth telluride epitaxial films. Materials Research Express, no 2018( 11), 116410. doi:10.1088/2053-1591/aadeb7
NLM
Fornari CI, Rappl PHO, Fornari G, Travelho JS, Castro S de, Pirralho MJP, Pena FS, Peres ML, Abramof E, Morelhao SL. Structural defects and electronic phase diagram of topological insulator bismuth telluride epitaxial films [Internet]. Materials Research Express. 2018 ; no 2018( 11): 116410.[citado 2024 set. 09 ] Available from: http://iopscience.iop.org/article/10.1088/2053-1591/aadeb7
Vancouver
Fornari CI, Rappl PHO, Fornari G, Travelho JS, Castro S de, Pirralho MJP, Pena FS, Peres ML, Abramof E, Morelhao SL. Structural defects and electronic phase diagram of topological insulator bismuth telluride epitaxial films [Internet]. Materials Research Express. 2018 ; no 2018( 11): 116410.[citado 2024 set. 09 ] Available from: http://iopscience.iop.org/article/10.1088/2053-1591/aadeb7
Artigo de periodico
Magnetic-field-induced crossover from the inverse faraday effect to the optical orientation in 'EU'TE' (2018)
Pavlov, V. V.; Pisarev, R. V.; Nefedov, S. G.; Akimov, I. A.; Yakovlev, D. R.; Bayer, M.; Rappl, P. H. O.; Abramof, E.; Henriques, André Bohomoletz
Source: Journal of Applied Physics. Unidade: IF
Subjects: SEMICONDUTORES, MAGNETISMO, FERROMAGNETISMO
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
PAVLOV, V. V. et al. Magnetic-field-induced crossover from the inverse faraday effect to the optical orientation in 'EU'TE'. Journal of Applied Physics, v. 123, n. 19, p. 193102, 2018Tradução . . Disponível em: https://doi.org/10.1063/1.5027473. Acesso em: 09 set. 2024.
APA
Pavlov, V. V., Pisarev, R. V., Nefedov, S. G., Akimov, I. A., Yakovlev, D. R., Bayer, M., et al. (2018). Magnetic-field-induced crossover from the inverse faraday effect to the optical orientation in 'EU'TE'. Journal of Applied Physics, 123( 19), 193102. doi:10.1063/1.5027473
NLM
Pavlov VV, Pisarev RV, Nefedov SG, Akimov IA, Yakovlev DR, Bayer M, Rappl PHO, Abramof E, Henriques AB. Magnetic-field-induced crossover from the inverse faraday effect to the optical orientation in 'EU'TE' [Internet]. Journal of Applied Physics. 2018 ; 123( 19): 193102.[citado 2024 set. 09 ] Available from: https://doi.org/10.1063/1.5027473
Vancouver
Pavlov VV, Pisarev RV, Nefedov SG, Akimov IA, Yakovlev DR, Bayer M, Rappl PHO, Abramof E, Henriques AB. Magnetic-field-induced crossover from the inverse faraday effect to the optical orientation in 'EU'TE' [Internet]. Journal of Applied Physics. 2018 ; 123( 19): 193102.[citado 2024 set. 09 ] Available from: https://doi.org/10.1063/1.5027473
Artigo de periodico
Ultrafast light switching of ferromagnetism in 'EU''SE' (2018)
Henriques, André Bohomoletz; Gratens, Xavier Pierre Marie; Usachev, P. A.; China, V. A.; Springholz, G.; Henriques, André Bohomoletz
Source: Physical Review Letters. Unidade: IF
Subjects: SEMICONDUTORES, MAGNETISMO, FERROMAGNETISMO
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
HENRIQUES, André Bohomoletz et al. Ultrafast light switching of ferromagnetism in 'EU''SE'. Physical Review Letters, v. 120, n. 21, p. 217203, 2018Tradução . . Disponível em: https://doi.org/10.1103/PhysRevLett.120.217203. Acesso em: 09 set. 2024.
APA
Henriques, A. B., Gratens, X. P. M., Usachev, P. A., China, V. A., Springholz, G., & Henriques, A. B. (2018). Ultrafast light switching of ferromagnetism in 'EU''SE'. Physical Review Letters, 120( 21), 217203. doi:10.1103/PhysRevLett.120.217203
NLM
Henriques AB, Gratens XPM, Usachev PA, China VA, Springholz G, Henriques AB. Ultrafast light switching of ferromagnetism in 'EU''SE' [Internet]. Physical Review Letters. 2018 ; 120( 21): 217203.[citado 2024 set. 09 ] Available from: https://doi.org/10.1103/PhysRevLett.120.217203
Vancouver
Henriques AB, Gratens XPM, Usachev PA, China VA, Springholz G, Henriques AB. Ultrafast light switching of ferromagnetism in 'EU''SE' [Internet]. Physical Review Letters. 2018 ; 120( 21): 217203.[citado 2024 set. 09 ] Available from: https://doi.org/10.1103/PhysRevLett.120.217203
Artigo de periodico
Micro grain analysis in plastically deformed silicon by 2nd-order X-ray diffraction (2018)
Dina, Gabriel; Kycia, Stefan; Gonzalez, Anal Gomez; Morelhao, Sergio Luiz
Source: MRS Advances. Unidade: IF
Subjects: DIFRAÇÃO POR RAIOS X, SEMICONDUTORES, CRISTALOGRAFIA DE RAIOS X
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
DINA, Gabriel et al. Micro grain analysis in plastically deformed silicon by 2nd-order X-ray diffraction. MRS Advances, v. 3, n. ju 2018, p. 2347-2352, 2018Tradução . . Disponível em: https://doi.org/10.1557/adv.2018.511. Acesso em: 09 set. 2024.
APA
Dina, G., Kycia, S., Gonzalez, A. G., & Morelhao, S. L. (2018). Micro grain analysis in plastically deformed silicon by 2nd-order X-ray diffraction. MRS Advances, 3( ju 2018), 2347-2352. doi:10.1557/adv.2018.511
NLM
Dina G, Kycia S, Gonzalez AG, Morelhao SL. Micro grain analysis in plastically deformed silicon by 2nd-order X-ray diffraction [Internet]. MRS Advances. 2018 ; 3( ju 2018): 2347-2352.[citado 2024 set. 09 ] Available from: https://doi.org/10.1557/adv.2018.511
Vancouver
Dina G, Kycia S, Gonzalez AG, Morelhao SL. Micro grain analysis in plastically deformed silicon by 2nd-order X-ray diffraction [Internet]. MRS Advances. 2018 ; 3( ju 2018): 2347-2352.[citado 2024 set. 09 ] Available from: https://doi.org/10.1557/adv.2018.511

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