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Artigo de periodico
Effects of side-chain and electron exchange correlation on the band structure of perylene diimide liquid crystals: a density functional study (2009)
Arantes, José Tadeu; Lima, M P; Fazzio, Adalberto; Xiang, H; Wei, Su-Huai; Dalpian, G. M.
Source: Journal of Physical Chemistry B. Unidade: IF
Subjects: ESTRUTURA ELETRÔNICA, FILMES FINOS, SEMICONDUTORES
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ABNT
ARANTES, José Tadeu et al. Effects of side-chain and electron exchange correlation on the band structure of perylene diimide liquid crystals: a density functional study. Journal of Physical Chemistry B, v. 113, n. 16, p. 5376-5380, 2009Tradução . . Disponível em: http://pubs.acs.org/doi/pdfplus/10.1021/jp8101018. Acesso em: 12 out. 2024.
APA
Arantes, J. T., Lima, M. P., Fazzio, A., Xiang, H., Wei, S. -H., & Dalpian, G. M. (2009). Effects of side-chain and electron exchange correlation on the band structure of perylene diimide liquid crystals: a density functional study. Journal of Physical Chemistry B, 113( 16), 5376-5380. Recuperado de http://pubs.acs.org/doi/pdfplus/10.1021/jp8101018
NLM
Arantes JT, Lima MP, Fazzio A, Xiang H, Wei S-H, Dalpian GM. Effects of side-chain and electron exchange correlation on the band structure of perylene diimide liquid crystals: a density functional study [Internet]. Journal of Physical Chemistry B. 2009 ; 113( 16): 5376-5380.[citado 2024 out. 12 ] Available from: http://pubs.acs.org/doi/pdfplus/10.1021/jp8101018
Vancouver
Arantes JT, Lima MP, Fazzio A, Xiang H, Wei S-H, Dalpian GM. Effects of side-chain and electron exchange correlation on the band structure of perylene diimide liquid crystals: a density functional study [Internet]. Journal of Physical Chemistry B. 2009 ; 113( 16): 5376-5380.[citado 2024 out. 12 ] Available from: http://pubs.acs.org/doi/pdfplus/10.1021/jp8101018
Artigo de periodico
Antilocalization of hole carriers in `Pb IND.1-x´`Eu IND.x´ Te alloys in the metallic regime (2009)
Peres, Marcelo L; Chitta, Valmir Antonio; Oliveira Jr., N. F.; Maude, D K; Rappl, P H O; Ueta, A Y; Abramof, E
Source: Physical Review B. Unidade: IF
Subjects: FILMES FINOS, SEMICONDUTORES
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ABNT
PERES, Marcelo L et al. Antilocalization of hole carriers in `Pb IND.1-x´`Eu IND.x´ Te alloys in the metallic regime. Physical Review B, v. 79, n. 8, p. 085309/1-085309/5, 2009Tradução . . Disponível em: http://scitation.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=PRBMDO000079000008085309000001&idtype=cvips&prog=normal. Acesso em: 12 out. 2024.
APA
Peres, M. L., Chitta, V. A., Oliveira Jr., N. F., Maude, D. K., Rappl, P. H. O., Ueta, A. Y., & Abramof, E. (2009). Antilocalization of hole carriers in `Pb IND.1-x´`Eu IND.x´ Te alloys in the metallic regime. Physical Review B, 79( 8), 085309/1-085309/5. Recuperado de http://scitation.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=PRBMDO000079000008085309000001&idtype=cvips&prog=normal
NLM
Peres ML, Chitta VA, Oliveira Jr. NF, Maude DK, Rappl PHO, Ueta AY, Abramof E. Antilocalization of hole carriers in `Pb IND.1-x´`Eu IND.x´ Te alloys in the metallic regime [Internet]. Physical Review B. 2009 ; 79( 8): 085309/1-085309/5.[citado 2024 out. 12 ] Available from: http://scitation.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=PRBMDO000079000008085309000001&idtype=cvips&prog=normal
Vancouver
Peres ML, Chitta VA, Oliveira Jr. NF, Maude DK, Rappl PHO, Ueta AY, Abramof E. Antilocalization of hole carriers in `Pb IND.1-x´`Eu IND.x´ Te alloys in the metallic regime [Internet]. Physical Review B. 2009 ; 79( 8): 085309/1-085309/5.[citado 2024 out. 12 ] Available from: http://scitation.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=PRBMDO000079000008085309000001&idtype=cvips&prog=normal
Artigo de periodico
Accurate prediction of the `Si/SiO IND.2´ interface band offset using the self-consistent ab initio DFT/LDA-1/2 method (2009)
Ribeiro Junior, Mauro; Fonseca, Leonardo R C; Ferreira, Luiz Guimarães
Source: Physical Review B. Unidade: IF
Assunto: SEMICONDUTORES
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ABNT
RIBEIRO JUNIOR, Mauro e FONSECA, Leonardo R C e FERREIRA, Luiz Guimarães. Accurate prediction of the `Si/SiO IND.2´ interface band offset using the self-consistent ab initio DFT/LDA-1/2 method. Physical Review B, v. 79, n. 24, p. 241312-1/241312-4, 2009Tradução . . Disponível em: http://scitation.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=PRBMDO000079000024241312000001&idtype=cvips&prog=normal. Acesso em: 12 out. 2024.
APA
Ribeiro Junior, M., Fonseca, L. R. C., & Ferreira, L. G. (2009). Accurate prediction of the `Si/SiO IND.2´ interface band offset using the self-consistent ab initio DFT/LDA-1/2 method. Physical Review B, 79( 24), 241312-1/241312-4. Recuperado de http://scitation.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=PRBMDO000079000024241312000001&idtype=cvips&prog=normal
NLM
Ribeiro Junior M, Fonseca LRC, Ferreira LG. Accurate prediction of the `Si/SiO IND.2´ interface band offset using the self-consistent ab initio DFT/LDA-1/2 method [Internet]. Physical Review B. 2009 ; 79( 24): 241312-1/241312-4.[citado 2024 out. 12 ] Available from: http://scitation.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=PRBMDO000079000024241312000001&idtype=cvips&prog=normal
Vancouver
Ribeiro Junior M, Fonseca LRC, Ferreira LG. Accurate prediction of the `Si/SiO IND.2´ interface band offset using the self-consistent ab initio DFT/LDA-1/2 method [Internet]. Physical Review B. 2009 ; 79( 24): 241312-1/241312-4.[citado 2024 out. 12 ] Available from: http://scitation.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=PRBMDO000079000024241312000001&idtype=cvips&prog=normal
Trabalho de evento-resumo
Accurate electronic band gap and electron e®ective masses of AlGaN and InGaN from LDA-1/2 calculations (2009)
Pelá, Ronaldo Rodrigues; Caetano, Clovis; Teles, L K; Marques, Marcelo; Ferreira, Luiz Guimarães
Source: Poster Session. Conference titles: Encontro Nacional de Física da Matéria Condensada. Unidade: IF
Subjects: FÍSICA DA MATÉRIA CONDENSADA, SEMICONDUTORES
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ABNT
PELÁ, Ronaldo Rodrigues et al. Accurate electronic band gap and electron e®ective masses of AlGaN and InGaN from LDA-1/2 calculations. 2009, Anais.. São Paulo: SBF, 2009. Disponível em: http://www.sbf1.sbfisica.org.br/eventos/enfmc/xxxii/sys/resumos/R0930-3.pdf. Acesso em: 12 out. 2024.
APA
Pelá, R. R., Caetano, C., Teles, L. K., Marques, M., & Ferreira, L. G. (2009). Accurate electronic band gap and electron e®ective masses of AlGaN and InGaN from LDA-1/2 calculations. In Poster Session. São Paulo: SBF. Recuperado de http://www.sbf1.sbfisica.org.br/eventos/enfmc/xxxii/sys/resumos/R0930-3.pdf
NLM
Pelá RR, Caetano C, Teles LK, Marques M, Ferreira LG. Accurate electronic band gap and electron e®ective masses of AlGaN and InGaN from LDA-1/2 calculations [Internet]. Poster Session. 2009 ;[citado 2024 out. 12 ] Available from: http://www.sbf1.sbfisica.org.br/eventos/enfmc/xxxii/sys/resumos/R0930-3.pdf
Vancouver
Pelá RR, Caetano C, Teles LK, Marques M, Ferreira LG. Accurate electronic band gap and electron e®ective masses of AlGaN and InGaN from LDA-1/2 calculations [Internet]. Poster Session. 2009 ;[citado 2024 out. 12 ] Available from: http://www.sbf1.sbfisica.org.br/eventos/enfmc/xxxii/sys/resumos/R0930-3.pdf
Trabalho de evento-anais periodico
Valley splitting and g-factor in A1As quantum wells (2009)
Duarte, Cesário Antonio; Gusev, Guennadii Michailovich; Lamas, T. E.; Bakarov, A K; Portal, J C
Source: International Journal of Modern Physics B. Conference titles: International Conference on High Magnetic Fields in Semiconductor Physics and Nanotechnology. Unidade: IF
Subjects: SEMICONDUTORES, POÇOS QUÂNTICOS
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ABNT
DUARTE, Cesário Antonio et al. Valley splitting and g-factor in A1As quantum wells. International Journal of Modern Physics B. Singapore: World Scientific. Disponível em: http://www.worldscinet.com.w10077.dotlib.com.br/ijmpb/23/preserved-docs/2312n13/S0217979209062608.pdf. Acesso em: 12 out. 2024. , 2009
APA
Duarte, C. A., Gusev, G. M., Lamas, T. E., Bakarov, A. K., & Portal, J. C. (2009). Valley splitting and g-factor in A1As quantum wells. International Journal of Modern Physics B. Singapore: World Scientific. Recuperado de http://www.worldscinet.com.w10077.dotlib.com.br/ijmpb/23/preserved-docs/2312n13/S0217979209062608.pdf
NLM
Duarte CA, Gusev GM, Lamas TE, Bakarov AK, Portal JC. Valley splitting and g-factor in A1As quantum wells [Internet]. International Journal of Modern Physics B. 2009 ; 23( 12-13): 2948-2954.[citado 2024 out. 12 ] Available from: http://www.worldscinet.com.w10077.dotlib.com.br/ijmpb/23/preserved-docs/2312n13/S0217979209062608.pdf
Vancouver
Duarte CA, Gusev GM, Lamas TE, Bakarov AK, Portal JC. Valley splitting and g-factor in A1As quantum wells [Internet]. International Journal of Modern Physics B. 2009 ; 23( 12-13): 2948-2954.[citado 2024 out. 12 ] Available from: http://www.worldscinet.com.w10077.dotlib.com.br/ijmpb/23/preserved-docs/2312n13/S0217979209062608.pdf
Trabalho de evento-anais periodico
Quantum hall ferromagneti in a double well with vanishing g-factor (2009)
Gomez Armas, Luis Enrique ; Gusev, Guennadii Michailovich; Lamas, T. E.; Bakarov, A K; Portal, J C
Source: International Journal of Modern Physics B. Conference titles: International Conference on High Magnetic Fields in Semiconductor Physics and Nanotechnology. Unidade: IF
Subjects: SEMICONDUTORES, POÇOS QUÂNTICOS
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ABNT
GOMEZ ARMAS, Luis Enrique et al. Quantum hall ferromagneti in a double well with vanishing g-factor. International Journal of Modern Physics B. Singapore: World Scientific. Disponível em: http://www.worldscinet.com.w10077.dotlib.com.br/ijmpb/23/preserved-docs/2312n13/S0217979209062578.pdf. Acesso em: 12 out. 2024. , 2009
APA
Gomez Armas, L. E., Gusev, G. M., Lamas, T. E., Bakarov, A. K., & Portal, J. C. (2009). Quantum hall ferromagneti in a double well with vanishing g-factor. International Journal of Modern Physics B. Singapore: World Scientific. Recuperado de http://www.worldscinet.com.w10077.dotlib.com.br/ijmpb/23/preserved-docs/2312n13/S0217979209062578.pdf
NLM
Gomez Armas LE, Gusev GM, Lamas TE, Bakarov AK, Portal JC. Quantum hall ferromagneti in a double well with vanishing g-factor [Internet]. International Journal of Modern Physics B. 2009 ; 23( 12-13): 2933-2937.[citado 2024 out. 12 ] Available from: http://www.worldscinet.com.w10077.dotlib.com.br/ijmpb/23/preserved-docs/2312n13/S0217979209062578.pdf
Vancouver
Gomez Armas LE, Gusev GM, Lamas TE, Bakarov AK, Portal JC. Quantum hall ferromagneti in a double well with vanishing g-factor [Internet]. International Journal of Modern Physics B. 2009 ; 23( 12-13): 2933-2937.[citado 2024 out. 12 ] Available from: http://www.worldscinet.com.w10077.dotlib.com.br/ijmpb/23/preserved-docs/2312n13/S0217979209062578.pdf
Trabalho de evento-anais periodico
Magnetoresistance oscillations in double quantum wells under microwave irradiation (2009)
Wiedmann, S; Gusev, Guennadii Michailovich; Raichev, O E; Lamas, T. E.; Bakarov, A K; Portal, J C
Source: International Journal of Modern Physics B. Conference titles: International Conference on High Magnetic Fields in Semiconductor Physics and Nanotechnology. Unidade: IF
Subjects: SEMICONDUTORES, POÇOS QUÂNTICOS
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ABNT
WIEDMANN, S et al. Magnetoresistance oscillations in double quantum wells under microwave irradiation. International Journal of Modern Physics B. Singapore: World Scientific. Disponível em: http://www.worldscinet.com.w10077.dotlib.com.br/ijmpb/23/preserved-docs/2312n13/S0217979209062591.pdf. Acesso em: 12 out. 2024. , 2009
APA
Wiedmann, S., Gusev, G. M., Raichev, O. E., Lamas, T. E., Bakarov, A. K., & Portal, J. C. (2009). Magnetoresistance oscillations in double quantum wells under microwave irradiation. International Journal of Modern Physics B. Singapore: World Scientific. Recuperado de http://www.worldscinet.com.w10077.dotlib.com.br/ijmpb/23/preserved-docs/2312n13/S0217979209062591.pdf
NLM
Wiedmann S, Gusev GM, Raichev OE, Lamas TE, Bakarov AK, Portal JC. Magnetoresistance oscillations in double quantum wells under microwave irradiation [Internet]. International Journal of Modern Physics B. 2009 ; 23( 12-13): 2943-2947.[citado 2024 out. 12 ] Available from: http://www.worldscinet.com.w10077.dotlib.com.br/ijmpb/23/preserved-docs/2312n13/S0217979209062591.pdf
Vancouver
Wiedmann S, Gusev GM, Raichev OE, Lamas TE, Bakarov AK, Portal JC. Magnetoresistance oscillations in double quantum wells under microwave irradiation [Internet]. International Journal of Modern Physics B. 2009 ; 23( 12-13): 2943-2947.[citado 2024 out. 12 ] Available from: http://www.worldscinet.com.w10077.dotlib.com.br/ijmpb/23/preserved-docs/2312n13/S0217979209062591.pdf
Artigo de periodico
Organic molecule assembled between carbon nanotubes: a highly efficient switch device (2009)
Martins, Thiago Barros; Fazzio, Adalberto; Silva, Antonio Jose Roque da
Source: Physical Review B. Unidade: IF
Subjects: MATERIAIS NANOESTRUTURADOS, NANOPARTÍCULAS, SEMICONDUTORES
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ABNT
MARTINS, Thiago Barros e FAZZIO, Adalberto e SILVA, Antonio Jose Roque da. Organic molecule assembled between carbon nanotubes: a highly efficient switch device. Physical Review B, v. 79, n. 11, p. 115413-1/115413-4, 2009Tradução . . Disponível em: https://doi.org/10.1103/physrevb.79.115413. Acesso em: 12 out. 2024.
APA
Martins, T. B., Fazzio, A., & Silva, A. J. R. da. (2009). Organic molecule assembled between carbon nanotubes: a highly efficient switch device. Physical Review B, 79( 11), 115413-1/115413-4. doi:10.1103/physrevb.79.115413
NLM
Martins TB, Fazzio A, Silva AJR da. Organic molecule assembled between carbon nanotubes: a highly efficient switch device [Internet]. Physical Review B. 2009 ; 79( 11): 115413-1/115413-4.[citado 2024 out. 12 ] Available from: https://doi.org/10.1103/physrevb.79.115413
Vancouver
Martins TB, Fazzio A, Silva AJR da. Organic molecule assembled between carbon nanotubes: a highly efficient switch device [Internet]. Physical Review B. 2009 ; 79( 11): 115413-1/115413-4.[citado 2024 out. 12 ] Available from: https://doi.org/10.1103/physrevb.79.115413
Trabalho de evento-anais periodico
Preface to Special Topic: Plenary and Invited Papers from the 29th International Conference on the Physics of Semiconductors, Rio de Janeiro, Brazil, 2008 (2009)
Caldas, Marília Junqueira; Studart, Nelson
Source: Journal of Applied Physics,. Conference titles: International Conference on the Physics of Semiconductors. Unidade: IF
Assunto: SEMICONDUTORES
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ABNT
CALDAS, Marília Junqueira e STUDART, Nelson. Preface to Special Topic: Plenary and Invited Papers from the 29th International Conference on the Physics of Semiconductors, Rio de Janeiro, Brazil, 2008. Journal of Applied Physics,. Melville: AIP. Disponível em: http://scitation.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=JAPIAU000105000012122301000001&idtype=cvips&prog=normal. Acesso em: 12 out. 2024. , 2009
APA
Caldas, M. J., & Studart, N. (2009). Preface to Special Topic: Plenary and Invited Papers from the 29th International Conference on the Physics of Semiconductors, Rio de Janeiro, Brazil, 2008. Journal of Applied Physics,. Melville: AIP. Recuperado de http://scitation.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=JAPIAU000105000012122301000001&idtype=cvips&prog=normal
NLM
Caldas MJ, Studart N. Preface to Special Topic: Plenary and Invited Papers from the 29th International Conference on the Physics of Semiconductors, Rio de Janeiro, Brazil, 2008 [Internet]. Journal of Applied Physics,. 2009 ; 105( 12): 122301/1-122301/2.[citado 2024 out. 12 ] Available from: http://scitation.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=JAPIAU000105000012122301000001&idtype=cvips&prog=normal
Vancouver
Caldas MJ, Studart N. Preface to Special Topic: Plenary and Invited Papers from the 29th International Conference on the Physics of Semiconductors, Rio de Janeiro, Brazil, 2008 [Internet]. Journal of Applied Physics,. 2009 ; 105( 12): 122301/1-122301/2.[citado 2024 out. 12 ] Available from: http://scitation.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=JAPIAU000105000012122301000001&idtype=cvips&prog=normal
Artigo de periodico
Electronic properties and hyperfine fields of nickel-related complexes in diamond (2009)
Larico, R; Justo Filho, João Francisco ; Machado, Wanda Valle Marcondes; Assali, L. V. C.
Source: Physical Review B. Unidades: EP, IF
Assunto: SEMICONDUTORES
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ABNT
LARICO, R et al. Electronic properties and hyperfine fields of nickel-related complexes in diamond. Physical Review B, v. 79, n. 11, p. 115202-1/115202-11, 2009Tradução . . Disponível em: https://doi.org/10.1103/physrevb.79.115202. Acesso em: 12 out. 2024.
APA
Larico, R., Justo Filho, J. F., Machado, W. V. M., & Assali, L. V. C. (2009). Electronic properties and hyperfine fields of nickel-related complexes in diamond. Physical Review B, 79( 11), 115202-1/115202-11. doi:10.1103/physrevb.79.115202
NLM
Larico R, Justo Filho JF, Machado WVM, Assali LVC. Electronic properties and hyperfine fields of nickel-related complexes in diamond [Internet]. Physical Review B. 2009 ; 79( 11): 115202-1/115202-11.[citado 2024 out. 12 ] Available from: https://doi.org/10.1103/physrevb.79.115202
Vancouver
Larico R, Justo Filho JF, Machado WVM, Assali LVC. Electronic properties and hyperfine fields of nickel-related complexes in diamond [Internet]. Physical Review B. 2009 ; 79( 11): 115202-1/115202-11.[citado 2024 out. 12 ] Available from: https://doi.org/10.1103/physrevb.79.115202
Relatorio tecnico
Spin-induced optical second harmonic generation in the centrosymmetric magnetic semiconductors EuTe and EuSe (2009)
Kaminski, B; Lafrentz, M; Pisarev, R V; Yakovlev, D R; Pavlov, V V; Lukoshkin, V A; Henriques, André Bohomoletz; Springholz, G; Bauer, G; Abramof, E; Rappl, P H O; Bayer, M
Unidade: IF
Subjects: MATERIAIS, SEMICONDUTORES
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ABNT
KAMINSKI, B et al. Spin-induced optical second harmonic generation in the centrosymmetric magnetic semiconductors EuTe and EuSe. . São Paulo: Instituto de Física, Universidade de São Paulo. Disponível em: http://xxx.if.usp.br/PS_cache/arxiv/pdf/0906/0906.0907v1.pdf. Acesso em: 12 out. 2024. , 2009
APA
Kaminski, B., Lafrentz, M., Pisarev, R. V., Yakovlev, D. R., Pavlov, V. V., Lukoshkin, V. A., et al. (2009). Spin-induced optical second harmonic generation in the centrosymmetric magnetic semiconductors EuTe and EuSe. São Paulo: Instituto de Física, Universidade de São Paulo. Recuperado de http://xxx.if.usp.br/PS_cache/arxiv/pdf/0906/0906.0907v1.pdf
NLM
Kaminski B, Lafrentz M, Pisarev RV, Yakovlev DR, Pavlov VV, Lukoshkin VA, Henriques AB, Springholz G, Bauer G, Abramof E, Rappl PHO, Bayer M. Spin-induced optical second harmonic generation in the centrosymmetric magnetic semiconductors EuTe and EuSe [Internet]. 2009 ;[citado 2024 out. 12 ] Available from: http://xxx.if.usp.br/PS_cache/arxiv/pdf/0906/0906.0907v1.pdf
Vancouver
Kaminski B, Lafrentz M, Pisarev RV, Yakovlev DR, Pavlov VV, Lukoshkin VA, Henriques AB, Springholz G, Bauer G, Abramof E, Rappl PHO, Bayer M. Spin-induced optical second harmonic generation in the centrosymmetric magnetic semiconductors EuTe and EuSe [Internet]. 2009 ;[citado 2024 out. 12 ] Available from: http://xxx.if.usp.br/PS_cache/arxiv/pdf/0906/0906.0907v1.pdf
Trabalho de evento-resumo
Theoretical study of the electronic and structural properties of amorphous `Hf IND.X´`Si IND.Y´O (2009)
Scopel, Wanderlã Luis; Silva, Antonio Jose Roque da; Fazzio, Adalberto
Source: Resumos. Conference titles: Encontro Nacional de Física da Matéria Condensada. Unidade: IF
Subjects: FÍSICA DA MATÉRIA CONDENSADA, SEMICONDUTORES
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ABNT
SCOPEL, Wanderlã Luis e SILVA, Antonio Jose Roque da e FAZZIO, Adalberto. Theoretical study of the electronic and structural properties of amorphous `Hf IND.X´`Si IND.Y´O. 2009, Anais.. São Paulo: SBF, 2009. Disponível em: http://www.sbf1.sbfisica.org.br/eventos/enfmc/xxxii/sys/resumos/R0192-1.pdf. Acesso em: 12 out. 2024.
APA
Scopel, W. L., Silva, A. J. R. da, & Fazzio, A. (2009). Theoretical study of the electronic and structural properties of amorphous `Hf IND.X´`Si IND.Y´O. In Resumos. São Paulo: SBF. Recuperado de http://www.sbf1.sbfisica.org.br/eventos/enfmc/xxxii/sys/resumos/R0192-1.pdf
NLM
Scopel WL, Silva AJR da, Fazzio A. Theoretical study of the electronic and structural properties of amorphous `Hf IND.X´`Si IND.Y´O [Internet]. Resumos. 2009 ;[citado 2024 out. 12 ] Available from: http://www.sbf1.sbfisica.org.br/eventos/enfmc/xxxii/sys/resumos/R0192-1.pdf
Vancouver
Scopel WL, Silva AJR da, Fazzio A. Theoretical study of the electronic and structural properties of amorphous `Hf IND.X´`Si IND.Y´O [Internet]. Resumos. 2009 ;[citado 2024 out. 12 ] Available from: http://www.sbf1.sbfisica.org.br/eventos/enfmc/xxxii/sys/resumos/R0192-1.pdf
Trabalho de evento-anais periodico
Magnetic resonant x-ray diffraction applied to the study of EuTe films and multilayers (2009)
Diaz, B; Abramof, E; Rappl, P H O; Granado, E; Chitta, Valmir Antonio; Henriques, André Bohomoletz; Oliveira Jr., N. F.
Source: International Journal of Modern Physics B. Conference titles: International Conference on High Magnetic Fields in Semiconductor Physics and Nanotechnology. Unidade: IF
Subjects: SEMICONDUTORES, DIFRAÇÃO POR RAIOS X
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ABNT
DIAZ, B et al. Magnetic resonant x-ray diffraction applied to the study of EuTe films and multilayers. International Journal of Modern Physics B. Singapore: World Scientific. . Acesso em: 12 out. 2024. , 2009
APA
Diaz, B., Abramof, E., Rappl, P. H. O., Granado, E., Chitta, V. A., Henriques, A. B., & Oliveira Jr., N. F. (2009). Magnetic resonant x-ray diffraction applied to the study of EuTe films and multilayers. International Journal of Modern Physics B. Singapore: World Scientific.
NLM
Diaz B, Abramof E, Rappl PHO, Granado E, Chitta VA, Henriques AB, Oliveira Jr. NF. Magnetic resonant x-ray diffraction applied to the study of EuTe films and multilayers. International Journal of Modern Physics B. 2009 ; 23( 12-13): 2979-2983.[citado 2024 out. 12 ]
Vancouver
Diaz B, Abramof E, Rappl PHO, Granado E, Chitta VA, Henriques AB, Oliveira Jr. NF. Magnetic resonant x-ray diffraction applied to the study of EuTe films and multilayers. International Journal of Modern Physics B. 2009 ; 23( 12-13): 2979-2983.[citado 2024 out. 12 ]
Artigo de periodico
Theory of near-gap second harmonic generation in centrosymmetric magnetic semiconductors: Europium chalcogenides (2009)
Henriques, André Bohomoletz; Abramof, E
Source: Physical Review B. Unidade: IF
Assunto: SEMICONDUTORES
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ABNT
HENRIQUES, André Bohomoletz e ABRAMOF, E. Theory of near-gap second harmonic generation in centrosymmetric magnetic semiconductors: Europium chalcogenides. Physical Review B, v. 80, n. 24, p. 245206/1-245206/8, 2009Tradução . . Disponível em: https://doi.org/10.1103/physrevb.80.245206. Acesso em: 12 out. 2024.
APA
Henriques, A. B., & Abramof, E. (2009). Theory of near-gap second harmonic generation in centrosymmetric magnetic semiconductors: Europium chalcogenides. Physical Review B, 80( 24), 245206/1-245206/8. doi:10.1103/physrevb.80.245206
NLM
Henriques AB, Abramof E. Theory of near-gap second harmonic generation in centrosymmetric magnetic semiconductors: Europium chalcogenides [Internet]. Physical Review B. 2009 ; 80( 24): 245206/1-245206/8.[citado 2024 out. 12 ] Available from: https://doi.org/10.1103/physrevb.80.245206
Vancouver
Henriques AB, Abramof E. Theory of near-gap second harmonic generation in centrosymmetric magnetic semiconductors: Europium chalcogenides [Internet]. Physical Review B. 2009 ; 80( 24): 245206/1-245206/8.[citado 2024 out. 12 ] Available from: https://doi.org/10.1103/physrevb.80.245206
Trabalho de evento-anais periodico
Trends on 3d transition metal impurities in diamond (2009)
Assali, L. V. C. ; Machado, Wanda Valle Marcondes; Justo Filho, João Francisco
Source: Physica B: Condensed Matter. Conference titles: International Conference on Defects in Semiconductors. Unidades: IF, EP
Subjects: SEMICONDUTORES, ESTRUTURA ELETRÔNICA
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
ASSALI, L. V. C. e MACHADO, Wanda Valle Marcondes e JUSTO FILHO, João Francisco. Trends on 3d transition metal impurities in diamond. Physica B: Condensed Matter. Amsterdam: Elsevier Science. Disponível em: https://doi.org/10.1016/j.physb.2009.08.109. Acesso em: 12 out. 2024. , 2009
APA
Assali, L. V. C., Machado, W. V. M., & Justo Filho, J. F. (2009). Trends on 3d transition metal impurities in diamond. Physica B: Condensed Matter. Amsterdam: Elsevier Science. doi:10.1016/j.physb.2009.08.109
NLM
Assali LVC, Machado WVM, Justo Filho JF. Trends on 3d transition metal impurities in diamond [Internet]. Physica B: Condensed Matter. 2009 ; 404( 23-24): 4515-4517.[citado 2024 out. 12 ] Available from: https://doi.org/10.1016/j.physb.2009.08.109
Vancouver
Assali LVC, Machado WVM, Justo Filho JF. Trends on 3d transition metal impurities in diamond [Internet]. Physica B: Condensed Matter. 2009 ; 404( 23-24): 4515-4517.[citado 2024 out. 12 ] Available from: https://doi.org/10.1016/j.physb.2009.08.109
Trabalho de evento-resumo
Disorder effects of codoped GaN based diluted magnetic semiconductors: antiferromagnetism with spin polarization (2009)
Santos, João Paulo Tommasatti; Marques, Marcelo; Teles, L K; Ferreira, Luiz Guimarães
Source: Poster Session. Conference titles: Encontro Nacional de Física da Matéria Condensada. Unidade: IF
Subjects: FÍSICA DA MATÉRIA CONDENSADA, SEMICONDUTORES
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ABNT
SANTOS, João Paulo Tommasatti et al. Disorder effects of codoped GaN based diluted magnetic semiconductors: antiferromagnetism with spin polarization. 2009, Anais.. São Paulo: SBF, 2009. Disponível em: http://www.sbf1.sbfisica.org.br/eventos/enfmc/xxxii/sys/resumos/R0930-1.pdf. Acesso em: 12 out. 2024.
APA
Santos, J. P. T., Marques, M., Teles, L. K., & Ferreira, L. G. (2009). Disorder effects of codoped GaN based diluted magnetic semiconductors: antiferromagnetism with spin polarization. In Poster Session. São Paulo: SBF. Recuperado de http://www.sbf1.sbfisica.org.br/eventos/enfmc/xxxii/sys/resumos/R0930-1.pdf
NLM
Santos JPT, Marques M, Teles LK, Ferreira LG. Disorder effects of codoped GaN based diluted magnetic semiconductors: antiferromagnetism with spin polarization [Internet]. Poster Session. 2009 ;[citado 2024 out. 12 ] Available from: http://www.sbf1.sbfisica.org.br/eventos/enfmc/xxxii/sys/resumos/R0930-1.pdf
Vancouver
Santos JPT, Marques M, Teles LK, Ferreira LG. Disorder effects of codoped GaN based diluted magnetic semiconductors: antiferromagnetism with spin polarization [Internet]. Poster Session. 2009 ;[citado 2024 out. 12 ] Available from: http://www.sbf1.sbfisica.org.br/eventos/enfmc/xxxii/sys/resumos/R0930-1.pdf
Trabalho de evento-resumo
Calculated band gaps and band offsets at the `SiO IND.2´/Si interface with the inclusion of the self-energy of electrons and holes (2009)
Ribeiro Junior, Mauro; Fonseca, Leonardo; Ferreira, Luiz Guimarães
Source: Poster Session. Conference titles: Encontro Nacional de Física da Matéria Condensada. Unidade: IF
Subjects: FÍSICA DA MATÉRIA CONDENSADA, SEMICONDUTORES
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
RIBEIRO JUNIOR, Mauro e FONSECA, Leonardo e FERREIRA, Luiz Guimarães. Calculated band gaps and band offsets at the `SiO IND.2´/Si interface with the inclusion of the self-energy of electrons and holes. 2009, Anais.. São Paulo: SBF, 2009. Disponível em: http://www.sbf1.sbfisica.org.br/eventos/enfmc/xxxii/sys/resumos/R0534-1.pdf. Acesso em: 12 out. 2024.
APA
Ribeiro Junior, M., Fonseca, L., & Ferreira, L. G. (2009). Calculated band gaps and band offsets at the `SiO IND.2´/Si interface with the inclusion of the self-energy of electrons and holes. In Poster Session. São Paulo: SBF. Recuperado de http://www.sbf1.sbfisica.org.br/eventos/enfmc/xxxii/sys/resumos/R0534-1.pdf
NLM
Ribeiro Junior M, Fonseca L, Ferreira LG. Calculated band gaps and band offsets at the `SiO IND.2´/Si interface with the inclusion of the self-energy of electrons and holes [Internet]. Poster Session. 2009 ;[citado 2024 out. 12 ] Available from: http://www.sbf1.sbfisica.org.br/eventos/enfmc/xxxii/sys/resumos/R0534-1.pdf
Vancouver
Ribeiro Junior M, Fonseca L, Ferreira LG. Calculated band gaps and band offsets at the `SiO IND.2´/Si interface with the inclusion of the self-energy of electrons and holes [Internet]. Poster Session. 2009 ;[citado 2024 out. 12 ] Available from: http://www.sbf1.sbfisica.org.br/eventos/enfmc/xxxii/sys/resumos/R0534-1.pdf
Trabalho de evento-resumo
Electro-optical characterization of non-abrupt metal/organic interfaces prepared by ion beam assisted deposition (IBAD) (2009)
Dionysio, D. Olzon; Chubaci, Jose Fernando Diniz; Faria, Roberto Mendonça ; Guimarães, Francisco Eduardo Gontijo
Source: Program. Conference titles: International Symposium on Advanced Materials and Nanostructures - ISAMN. Unidades: IF, IFSC
Subjects: POLÍMEROS (MATERIAIS), DIODOS, EMISSÃO DE LUZ, QUÍMICA ORGÂNICA, FILMES FINOS, SEMICONDUTORES
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ABNT
DIONYSIO, D. Olzon et al. Electro-optical characterization of non-abrupt metal/organic interfaces prepared by ion beam assisted deposition (IBAD). 2009, Anais.. Santo André: Universidade Federal do ABC - UFABC, 2009. . Acesso em: 12 out. 2024.
APA
Dionysio, D. O., Chubaci, J. F. D., Faria, R. M., & Guimarães, F. E. G. (2009). Electro-optical characterization of non-abrupt metal/organic interfaces prepared by ion beam assisted deposition (IBAD). In Program. Santo André: Universidade Federal do ABC - UFABC.
NLM
Dionysio DO, Chubaci JFD, Faria RM, Guimarães FEG. Electro-optical characterization of non-abrupt metal/organic interfaces prepared by ion beam assisted deposition (IBAD). Program. 2009 ;[citado 2024 out. 12 ]
Vancouver
Dionysio DO, Chubaci JFD, Faria RM, Guimarães FEG. Electro-optical characterization of non-abrupt metal/organic interfaces prepared by ion beam assisted deposition (IBAD). Program. 2009 ;[citado 2024 out. 12 ]
Artigo de periodico
Effects of confinement on the electron-phonon interaction in `Al IND.0.18´`Ga IND.0.82´As/GaAs quantum wells (2009)
Morais, R R O; Dias, I F L; Silva, M A T da; Cesar, D F; Duarte, J L; Lourenço, S A; Laureto, E; Silva, Euzi Conceicao Fernandes da; Quivy, A. A.
Source: Journal of Physics-Condensed Matter. Unidade: IF
Subjects: SEMICONDUTORES, FOTOLUMINESCÊNCIA
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
MORAIS, R R O et al. Effects of confinement on the electron-phonon interaction in `Al IND.0.18´`Ga IND.0.82´As/GaAs quantum wells. Journal of Physics-Condensed Matter, v. 21, n. 15, p. 155601/1-155601/7, 2009Tradução . . Disponível em: https://repositorio.usp.br/directbitstream/89a955fe-df31-4137-bc37-638f06d87904/1-s2.0-0921452695006508-main.pdf. Acesso em: 12 out. 2024.
APA
Morais, R. R. O., Dias, I. F. L., Silva, M. A. T. da, Cesar, D. F., Duarte, J. L., Lourenço, S. A., et al. (2009). Effects of confinement on the electron-phonon interaction in `Al IND.0.18´`Ga IND.0.82´As/GaAs quantum wells. Journal of Physics-Condensed Matter, 21( 15), 155601/1-155601/7. Recuperado de https://repositorio.usp.br/directbitstream/89a955fe-df31-4137-bc37-638f06d87904/1-s2.0-0921452695006508-main.pdf
NLM
Morais RRO, Dias IFL, Silva MAT da, Cesar DF, Duarte JL, Lourenço SA, Laureto E, Silva ECF da, Quivy AA. Effects of confinement on the electron-phonon interaction in `Al IND.0.18´`Ga IND.0.82´As/GaAs quantum wells [Internet]. Journal of Physics-Condensed Matter. 2009 ; 21( 15): 155601/1-155601/7.[citado 2024 out. 12 ] Available from: https://repositorio.usp.br/directbitstream/89a955fe-df31-4137-bc37-638f06d87904/1-s2.0-0921452695006508-main.pdf
Vancouver
Morais RRO, Dias IFL, Silva MAT da, Cesar DF, Duarte JL, Lourenço SA, Laureto E, Silva ECF da, Quivy AA. Effects of confinement on the electron-phonon interaction in `Al IND.0.18´`Ga IND.0.82´As/GaAs quantum wells [Internet]. Journal of Physics-Condensed Matter. 2009 ; 21( 15): 155601/1-155601/7.[citado 2024 out. 12 ] Available from: https://repositorio.usp.br/directbitstream/89a955fe-df31-4137-bc37-638f06d87904/1-s2.0-0921452695006508-main.pdf
Artigo de periodico
Growth and capping of InAs/GaAs quantum dots investigated by x-ray Bragg-surface diffraction (2009)
Freitas, Raul de Oliveira; Quivy, A. A.; Morelhão, Sérgio Luiz
Source: Journal of Applied Physics,. Unidade: IF
Subjects: SEMICONDUTORES, POÇOS QUÂNTICOS, DIFRAÇÃO POR RAIOS X
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
FREITAS, Raul de Oliveira e QUIVY, A. A. e MORELHÃO, Sérgio Luiz. Growth and capping of InAs/GaAs quantum dots investigated by x-ray Bragg-surface diffraction. Journal of Applied Physics, v. 105, n. 3, p. 036104-1/-03104/3, 2009Tradução . . Disponível em: https://doi.org/10.1063/1.3074376. Acesso em: 12 out. 2024.
APA
Freitas, R. de O., Quivy, A. A., & Morelhão, S. L. (2009). Growth and capping of InAs/GaAs quantum dots investigated by x-ray Bragg-surface diffraction. Journal of Applied Physics,, 105( 3), 036104-1/-03104/3. doi:10.1063/1.3074376
NLM
Freitas R de O, Quivy AA, Morelhão SL. Growth and capping of InAs/GaAs quantum dots investigated by x-ray Bragg-surface diffraction [Internet]. Journal of Applied Physics,. 2009 ; 105( 3): 036104-1/-03104/3.[citado 2024 out. 12 ] Available from: https://doi.org/10.1063/1.3074376
Vancouver
Freitas R de O, Quivy AA, Morelhão SL. Growth and capping of InAs/GaAs quantum dots investigated by x-ray Bragg-surface diffraction [Internet]. Journal of Applied Physics,. 2009 ; 105( 3): 036104-1/-03104/3.[citado 2024 out. 12 ] Available from: https://doi.org/10.1063/1.3074376

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