Calculated band gaps and band offsets at the `SiO IND.2´/Si interface with the inclusion of the self-energy of electrons and holes (2009)
- Authors:
- Autor USP: FERREIRA, LUIZ GUIMARAES - IF
- Unidade: IF
- Subjects: FÍSICA DA MATÉRIA CONDENSADA; SEMICONDUTORES
- Language: Inglês
- Imprenta:
- Source:
- Título do periódico: Poster Session
- Conference titles: Encontro Nacional de Física da Matéria Condensada
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ABNT
RIBEIRO JUNIOR, Mauro e FONSECA, Leonardo e FERREIRA, Luiz Guimarães. Calculated band gaps and band offsets at the `SiO IND.2´/Si interface with the inclusion of the self-energy of electrons and holes. 2009, Anais.. São Paulo: SBF, 2009. Disponível em: http://www.sbf1.sbfisica.org.br/eventos/enfmc/xxxii/sys/resumos/R0534-1.pdf. Acesso em: 24 abr. 2024. -
APA
Ribeiro Junior, M., Fonseca, L., & Ferreira, L. G. (2009). Calculated band gaps and band offsets at the `SiO IND.2´/Si interface with the inclusion of the self-energy of electrons and holes. In Poster Session. São Paulo: SBF. Recuperado de http://www.sbf1.sbfisica.org.br/eventos/enfmc/xxxii/sys/resumos/R0534-1.pdf -
NLM
Ribeiro Junior M, Fonseca L, Ferreira LG. Calculated band gaps and band offsets at the `SiO IND.2´/Si interface with the inclusion of the self-energy of electrons and holes [Internet]. Poster Session. 2009 ;[citado 2024 abr. 24 ] Available from: http://www.sbf1.sbfisica.org.br/eventos/enfmc/xxxii/sys/resumos/R0534-1.pdf -
Vancouver
Ribeiro Junior M, Fonseca L, Ferreira LG. Calculated band gaps and band offsets at the `SiO IND.2´/Si interface with the inclusion of the self-energy of electrons and holes [Internet]. Poster Session. 2009 ;[citado 2024 abr. 24 ] Available from: http://www.sbf1.sbfisica.org.br/eventos/enfmc/xxxii/sys/resumos/R0534-1.pdf - First-principles calculations of the phase diagrams of noble metals: 'CU'-'AU', 'CU'-'AG', and 'AG'-'AU'
- First principles phase diagrams calculation of ii-vi semiconductor alloys
- Accurate prediction of the `Si/SiO IND.2´ interface band offset using the self-consistent ab initio DFT/LDA-1/2 method
- Accurate electronic band gap and electron e®ective masses of AlGaN and InGaN from LDA-1/2 calculations
- Effect of chemical and elastic interactions on the phase diagram of isostructural solids
- Ordering of isovalent intersemiconductor alloys
- Mecânica estatística de compostos intermetálicos
- Combined LDA and LDA-1/2 method to obtain defect formation energies in large silicon supercells
- Some surprising results of the kohn-sham density functional
- New technique in the calculation of defects in solids by molecular methods: pure and 'CU'-doped 'ZNS'
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