A simple leakage drain current model for accumulation-mode SOI pMOSFETs operating up to 300ºC (2001)
Bellodi, Marcello; Iniguez, Benjamin; Flandre, Denis 
; Martino, João Antonio
Fonte: SBMicro 2001: proceedings. Nome do evento: International Conference on Microelectronics and Packaging. Unidade: EP
Assunto: CIRCUITOS INTEGRADOS
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BELLODI, Marcello et al. A simple leakage drain current model for accumulation-mode SOI pMOSFETs operating up to 300ºC. 2001, Anais.. Brasília: SBMicro, 2001. . Acesso em: 15 nov. 2025.APA
Bellodi, M., Iniguez, B., Flandre, D., & Martino, J. A. (2001). A simple leakage drain current model for accumulation-mode SOI pMOSFETs operating up to 300ºC. In SBMicro 2001: proceedings. Brasília: SBMicro.NLM
Bellodi M, Iniguez B, Flandre D, Martino JA. A simple leakage drain current model for accumulation-mode SOI pMOSFETs operating up to 300ºC. SBMicro 2001: proceedings. 2001 ;[citado 2025 nov. 15 ]Vancouver
Bellodi M, Iniguez B, Flandre D, Martino JA. A simple leakage drain current model for accumulation-mode SOI pMOSFETs operating up to 300ºC. SBMicro 2001: proceedings. 2001 ;[citado 2025 nov. 15 ]
