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Artigo de periodico
Optical properties of natural 'In IND.X'Ga IND.1'-XAs quantum dots grown on high-index GaAs substrates (1997)
Gonzalez-Borrero, Pedro P; Lubyshev, D I; Petitprez, E; La Scala Junior, Newton; Marega Junior, Euclydes ; Basmaji, Pierre
Source: Brazilian Journal of Physics. Unidade: IFSC
Assunto: MATÉRIA CONDENSADA
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ABNT
GONZALEZ-BORRERO, Pedro P et al. Optical properties of natural 'In IND.X'Ga IND.1'-XAs quantum dots grown on high-index GaAs substrates. Brazilian Journal of Physics, v. 27, n. 2, p. 65-75, 1997Tradução . . Acesso em: 09 nov. 2024.
APA
Gonzalez-Borrero, P. P., Lubyshev, D. I., Petitprez, E., La Scala Junior, N., Marega Junior, E., & Basmaji, P. (1997). Optical properties of natural 'In IND.X'Ga IND.1'-XAs quantum dots grown on high-index GaAs substrates. Brazilian Journal of Physics, 27( 2), 65-75.
NLM
Gonzalez-Borrero PP, Lubyshev DI, Petitprez E, La Scala Junior N, Marega Junior E, Basmaji P. Optical properties of natural 'In IND.X'Ga IND.1'-XAs quantum dots grown on high-index GaAs substrates. Brazilian Journal of Physics. 1997 ; 27( 2): 65-75.[citado 2024 nov. 09 ]
Vancouver
Gonzalez-Borrero PP, Lubyshev DI, Petitprez E, La Scala Junior N, Marega Junior E, Basmaji P. Optical properties of natural 'In IND.X'Ga IND.1'-XAs quantum dots grown on high-index GaAs substrates. Brazilian Journal of Physics. 1997 ; 27( 2): 65-75.[citado 2024 nov. 09 ]
Artigo de periodico
Optical properties of self-assembled 'IN''AS' quantum dots on high-index 'GA''AS' substrates (1997)
González-Borrero, P P; Marega Junior, Euclydes ; Lubyshev, D I; Petitprez, E; Basmaji, Pierre
Source: Superlattices and Microstructures. Unidade: IFSC
Assunto: MATÉRIA CONDENSADA
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ABNT
GONZÁLEZ-BORRERO, P P et al. Optical properties of self-assembled 'IN''AS' quantum dots on high-index 'GA''AS' substrates. Superlattices and Microstructures, v. 22, n. 1 , p. 85-89, 1997Tradução . . Acesso em: 09 nov. 2024.
APA
González-Borrero, P. P., Marega Junior, E., Lubyshev, D. I., Petitprez, E., & Basmaji, P. (1997). Optical properties of self-assembled 'IN''AS' quantum dots on high-index 'GA''AS' substrates. Superlattices and Microstructures, 22( 1 ), 85-89.
NLM
González-Borrero PP, Marega Junior E, Lubyshev DI, Petitprez E, Basmaji P. Optical properties of self-assembled 'IN''AS' quantum dots on high-index 'GA''AS' substrates. Superlattices and Microstructures. 1997 ; 22( 1 ): 85-89.[citado 2024 nov. 09 ]
Vancouver
González-Borrero PP, Marega Junior E, Lubyshev DI, Petitprez E, Basmaji P. Optical properties of self-assembled 'IN''AS' quantum dots on high-index 'GA''AS' substrates. Superlattices and Microstructures. 1997 ; 22( 1 ): 85-89.[citado 2024 nov. 09 ]
Trabalho de evento-resumo
Interference effects in a nonplanar wires with a two-dimensional electron GAS (1997)
Basmaji, Pierre; Gusev, G M; La Scala Junior, N; Maude, D K; Portal, J C; Lubyshev, D I; Silva, M P A; González-Borrero, P P; Rossi, J C
Source: Abstracts. Conference titles: International Conference on Superlattices, Microructures, and Microdevices. Unidade: IFSC
Subjects: MATÉRIA CONDENSADA, MATÉRIA CONDENSADA
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ABNT
BASMAJI, Pierre et al. Interference effects in a nonplanar wires with a two-dimensional electron GAS. 1997, Anais.. Lincoln: University of Nebraska, 1997. . Acesso em: 09 nov. 2024.
APA
Basmaji, P., Gusev, G. M., La Scala Junior, N., Maude, D. K., Portal, J. C., Lubyshev, D. I., et al. (1997). Interference effects in a nonplanar wires with a two-dimensional electron GAS. In Abstracts. Lincoln: University of Nebraska.
NLM
Basmaji P, Gusev GM, La Scala Junior N, Maude DK, Portal JC, Lubyshev DI, Silva MPA, González-Borrero PP, Rossi JC. Interference effects in a nonplanar wires with a two-dimensional electron GAS. Abstracts. 1997 ;[citado 2024 nov. 09 ]
Vancouver
Basmaji P, Gusev GM, La Scala Junior N, Maude DK, Portal JC, Lubyshev DI, Silva MPA, González-Borrero PP, Rossi JC. Interference effects in a nonplanar wires with a two-dimensional electron GAS. Abstracts. 1997 ;[citado 2024 nov. 09 ]
Trabalho de evento-resumo
Universal diagonal and hall conductance fluctuations in a random magnetic field (1997)
Gusev, G M; Basmaji, Pierre; Kleber, X; Gennser, U; Maude, D K; Portal, J C; Lubyshev, D I; Silva, Marcelo de Assumpção Pereira da ; Rossi, J C; Nastaushev, Y V
Source: Program and Abstracts. Conference titles: Brazilian Workshop on Semiconductor Physics. Unidade: IFSC
Subjects: MATÉRIA CONDENSADA, SEMICONDUTORES
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ABNT
GUSEV, G M et al. Universal diagonal and hall conductance fluctuations in a random magnetic field. 1997, Anais.. Águas de Lindóia: Instituto de Física de São Carlos, Universidade de São Paulo, 1997. . Acesso em: 09 nov. 2024.
APA
Gusev, G. M., Basmaji, P., Kleber, X., Gennser, U., Maude, D. K., Portal, J. C., et al. (1997). Universal diagonal and hall conductance fluctuations in a random magnetic field. In Program and Abstracts. Águas de Lindóia: Instituto de Física de São Carlos, Universidade de São Paulo.
NLM
Gusev GM, Basmaji P, Kleber X, Gennser U, Maude DK, Portal JC, Lubyshev DI, Silva M de AP da, Rossi JC, Nastaushev YV. Universal diagonal and hall conductance fluctuations in a random magnetic field. Program and Abstracts. 1997 ;[citado 2024 nov. 09 ]
Vancouver
Gusev GM, Basmaji P, Kleber X, Gennser U, Maude DK, Portal JC, Lubyshev DI, Silva M de AP da, Rossi JC, Nastaushev YV. Universal diagonal and hall conductance fluctuations in a random magnetic field. Program and Abstracts. 1997 ;[citado 2024 nov. 09 ]
Trabalho de evento-resumo
Universal conductance fluctuations in a nonplanar wires with a two-dimensional electron gas (1997)
Rossi, J C; Gusev, G M; La Scala Júnior, N; Lubyshev, D I; Basmaji, Pierre; Portal, J C; Maude, D K
Conference titles: Encontro Nacional de Física da Matéria Condensada. Unidade: IFSC
Subjects: MATÉRIA CONDENSADA, MATÉRIA CONDENSADA
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ABNT
ROSSI, J C et al. Universal conductance fluctuations in a nonplanar wires with a two-dimensional electron gas. 1997, Anais.. São Paulo: Sociedade Brasileira de Física, 1997. . Acesso em: 09 nov. 2024.
APA
Rossi, J. C., Gusev, G. M., La Scala Júnior, N., Lubyshev, D. I., Basmaji, P., Portal, J. C., & Maude, D. K. (1997). Universal conductance fluctuations in a nonplanar wires with a two-dimensional electron gas. In . São Paulo: Sociedade Brasileira de Física.
NLM
Rossi JC, Gusev GM, La Scala Júnior N, Lubyshev DI, Basmaji P, Portal JC, Maude DK. Universal conductance fluctuations in a nonplanar wires with a two-dimensional electron gas. 1997 ;[citado 2024 nov. 09 ]
Vancouver
Rossi JC, Gusev GM, La Scala Júnior N, Lubyshev DI, Basmaji P, Portal JC, Maude DK. Universal conductance fluctuations in a nonplanar wires with a two-dimensional electron gas. 1997 ;[citado 2024 nov. 09 ]
Trabalho de evento
Large negative magnetoresistance in the insulating regime of a two dimensional electron gas with an artificial potential (1997)
Gusev, G M; Kleber, X; Gennser, U; Maude, D K; Portal, J C; Lubyshev, D I; Basmaji, Pierre; Silva, Marcelo de Assumpção Pereira da ; Rossi, J C; Nastaushev, Yu V
Conference titles: International Conference High Magnetic Fields in the Physics of Semiconductors II. Unidade: IFSC
Subjects: MATÉRIA CONDENSADA, MATÉRIA CONDENSADA
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ABNT
GUSEV, G M et al. Large negative magnetoresistance in the insulating regime of a two dimensional electron gas with an artificial potential. 1997, Anais.. Singapore: World Scientific, 1997. . Acesso em: 09 nov. 2024.
APA
Gusev, G. M., Kleber, X., Gennser, U., Maude, D. K., Portal, J. C., Lubyshev, D. I., et al. (1997). Large negative magnetoresistance in the insulating regime of a two dimensional electron gas with an artificial potential. In . Singapore: World Scientific.
NLM
Gusev GM, Kleber X, Gennser U, Maude DK, Portal JC, Lubyshev DI, Basmaji P, Silva M de AP da, Rossi JC, Nastaushev YV. Large negative magnetoresistance in the insulating regime of a two dimensional electron gas with an artificial potential. 1997 ;[citado 2024 nov. 09 ]
Vancouver
Gusev GM, Kleber X, Gennser U, Maude DK, Portal JC, Lubyshev DI, Basmaji P, Silva M de AP da, Rossi JC, Nastaushev YV. Large negative magnetoresistance in the insulating regime of a two dimensional electron gas with an artificial potential. 1997 ;[citado 2024 nov. 09 ]
Artigo de periodico
Characterization of GaAs wire crystals grown on porous silicon by Raman scattering (1997)
Silva, S W da; Lubyshev, D I; Basmaji, Pierre; Pusep, Yuri A ; Pizani, Paulo Sérgio; Galzerani, J C; Katiyar, R S; Morell, G
Source: Journal of Applied Physics. Unidade: IFSC
Subjects: MATÉRIA CONDENSADA, SUPERFÍCIE FÍSICA, SEMICONDUTORES
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ABNT
SILVA, S W da et al. Characterization of GaAs wire crystals grown on porous silicon by Raman scattering. Journal of Applied Physics, v. 82, n. 12, p. 6247-6250, 1997Tradução . . Disponível em: https://doi.org/10.1063/1.366511. Acesso em: 09 nov. 2024.
APA
Silva, S. W. da, Lubyshev, D. I., Basmaji, P., Pusep, Y. A., Pizani, P. S., Galzerani, J. C., et al. (1997). Characterization of GaAs wire crystals grown on porous silicon by Raman scattering. Journal of Applied Physics, 82( 12), 6247-6250. doi:10.1063/1.366511
NLM
Silva SW da, Lubyshev DI, Basmaji P, Pusep YA, Pizani PS, Galzerani JC, Katiyar RS, Morell G. Characterization of GaAs wire crystals grown on porous silicon by Raman scattering [Internet]. Journal of Applied Physics. 1997 ; 82( 12): 6247-6250.[citado 2024 nov. 09 ] Available from: https://doi.org/10.1063/1.366511
Vancouver
Silva SW da, Lubyshev DI, Basmaji P, Pusep YA, Pizani PS, Galzerani JC, Katiyar RS, Morell G. Characterization of GaAs wire crystals grown on porous silicon by Raman scattering [Internet]. Journal of Applied Physics. 1997 ; 82( 12): 6247-6250.[citado 2024 nov. 09 ] Available from: https://doi.org/10.1063/1.366511
Trabalho de evento-resumo
Exciton localization in GaAs/AlAs superlattices grown on high-index oriented surfaces (1997)
Marega Junior, Euclydes ; Libardi, A L; Lubyshev, D I; González-Borrero, Pedro Pablo; Basmaji, Pierre
Conference titles: International Conference on Low Dimensional Structures and Devices. Unidade: IFSC
Subjects: MATÉRIA CONDENSADA, MATÉRIA CONDENSADA (PROPRIEDADES ELÉTRICAS), SUPERFÍCIE FÍSICA
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ABNT
MAREGA JUNIOR, Euclydes et al. Exciton localization in GaAs/AlAs superlattices grown on high-index oriented surfaces. 1997, Anais.. Lisboa: Instituto de Física de São Carlos, Universidade de São Paulo, 1997. . Acesso em: 09 nov. 2024.
APA
Marega Junior, E., Libardi, A. L., Lubyshev, D. I., González-Borrero, P. P., & Basmaji, P. (1997). Exciton localization in GaAs/AlAs superlattices grown on high-index oriented surfaces. In . Lisboa: Instituto de Física de São Carlos, Universidade de São Paulo.
NLM
Marega Junior E, Libardi AL, Lubyshev DI, González-Borrero PP, Basmaji P. Exciton localization in GaAs/AlAs superlattices grown on high-index oriented surfaces. 1997 ;[citado 2024 nov. 09 ]
Vancouver
Marega Junior E, Libardi AL, Lubyshev DI, González-Borrero PP, Basmaji P. Exciton localization in GaAs/AlAs superlattices grown on high-index oriented surfaces. 1997 ;[citado 2024 nov. 09 ]
Trabalho de evento-resumo
Optical properties of vertically stacked InGaAs quantum dots layers grown on (311)A/B and (001) GaAs substrates (1997)
Petitprez, E; González-Borrero, P P; Lubyshev, D I; La Scala Júnior, Newton; Marega Junior, Euclydes ; Basmaji, Pierre; Mazel, A; Fourmeaux, R; Dorignoc, D
Conference titles: International Conference on Superlattices, Microructures, and Microdevices. Unidade: IFSC
Assunto: MATÉRIA CONDENSADA
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ABNT
PETITPREZ, E et al. Optical properties of vertically stacked InGaAs quantum dots layers grown on (311)A/B and (001) GaAs substrates. 1997, Anais.. Lincoln: University of Nebraska, 1997. . Acesso em: 09 nov. 2024.
APA
Petitprez, E., González-Borrero, P. P., Lubyshev, D. I., La Scala Júnior, N., Marega Junior, E., Basmaji, P., et al. (1997). Optical properties of vertically stacked InGaAs quantum dots layers grown on (311)A/B and (001) GaAs substrates. In . Lincoln: University of Nebraska.
NLM
Petitprez E, González-Borrero PP, Lubyshev DI, La Scala Júnior N, Marega Junior E, Basmaji P, Mazel A, Fourmeaux R, Dorignoc D. Optical properties of vertically stacked InGaAs quantum dots layers grown on (311)A/B and (001) GaAs substrates. 1997 ;[citado 2024 nov. 09 ]
Vancouver
Petitprez E, González-Borrero PP, Lubyshev DI, La Scala Júnior N, Marega Junior E, Basmaji P, Mazel A, Fourmeaux R, Dorignoc D. Optical properties of vertically stacked InGaAs quantum dots layers grown on (311)A/B and (001) GaAs substrates. 1997 ;[citado 2024 nov. 09 ]
Artigo de periodico
Photoluminescence of excitons in differently oriented self-assembled InAs quantum dots (1997)
Pusep, Yuri A ; Silva, S W; Galzerani, J C; Lubyshev, D I; Gonzalez-Borrero, Pedro P; Marega Junior, Euclydes ; Petitprez, E; La Scala Junior, Newton; Basmaji, Pierre
Source: Physica Status Solidi A. Unidade: IFSC
Subjects: MATÉRIA CONDENSADA, CIRCUITOS ELETRÔNICOS
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ABNT
PUSEP, Yuri A et al. Photoluminescence of excitons in differently oriented self-assembled InAs quantum dots. Physica Status Solidi A, v. 164, p. 455-457, 1997Tradução . . Acesso em: 09 nov. 2024.
APA
Pusep, Y. A., Silva, S. W., Galzerani, J. C., Lubyshev, D. I., Gonzalez-Borrero, P. P., Marega Junior, E., et al. (1997). Photoluminescence of excitons in differently oriented self-assembled InAs quantum dots. Physica Status Solidi A, 164, 455-457.
NLM
Pusep YA, Silva SW, Galzerani JC, Lubyshev DI, Gonzalez-Borrero PP, Marega Junior E, Petitprez E, La Scala Junior N, Basmaji P. Photoluminescence of excitons in differently oriented self-assembled InAs quantum dots. Physica Status Solidi A. 1997 ; 164 455-457.[citado 2024 nov. 09 ]
Vancouver
Pusep YA, Silva SW, Galzerani JC, Lubyshev DI, Gonzalez-Borrero PP, Marega Junior E, Petitprez E, La Scala Junior N, Basmaji P. Photoluminescence of excitons in differently oriented self-assembled InAs quantum dots. Physica Status Solidi A. 1997 ; 164 455-457.[citado 2024 nov. 09 ]
Artigo de periodico
Universal diagonal and Hall conductance fluctuations in a random magnetic field (1997)
Gusev, G M; Basmaji, Pierre; Gennser, U; Kleber, X; Maude, D K; Portal, J C; Lubyshev, D I; Silva, Marcelo de Assumpção Pereira da ; Rossi, Jose Carlos; Nastaushev, Y V
Source: Brazilian Journal of Physics. Unidade: IFSC
Subjects: MATÉRIA CONDENSADA, SEMICONDUTORES
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ABNT
GUSEV, G M et al. Universal diagonal and Hall conductance fluctuations in a random magnetic field. Brazilian Journal of Physics, v. 27/A, n. 4, p. 219-222, 1997Tradução . . Acesso em: 09 nov. 2024.
APA
Gusev, G. M., Basmaji, P., Gennser, U., Kleber, X., Maude, D. K., Portal, J. C., et al. (1997). Universal diagonal and Hall conductance fluctuations in a random magnetic field. Brazilian Journal of Physics, 27/A( 4), 219-222.
NLM
Gusev GM, Basmaji P, Gennser U, Kleber X, Maude DK, Portal JC, Lubyshev DI, Silva M de AP da, Rossi JC, Nastaushev YV. Universal diagonal and Hall conductance fluctuations in a random magnetic field. Brazilian Journal of Physics. 1997 ; 27/A( 4): 219-222.[citado 2024 nov. 09 ]
Vancouver
Gusev GM, Basmaji P, Gennser U, Kleber X, Maude DK, Portal JC, Lubyshev DI, Silva M de AP da, Rossi JC, Nastaushev YV. Universal diagonal and Hall conductance fluctuations in a random magnetic field. Brazilian Journal of Physics. 1997 ; 27/A( 4): 219-222.[citado 2024 nov. 09 ]
Trabalho de evento-resumo
Electron heating effects in a free standing wire observed by universal conductance fluctuations (1997)
La Scala Junior, N; Gusev, G M; Lubyshev, D I; González-Borrero, P P; Rossi, J C; Silva, Marcelo de Assumpção Pereira da ; Maude, D K; Portal, J C; Basmaji, Pierre
Source: Program and Abstracts. Conference titles: Brazilian Workshop on Semiconductor Physics. Unidade: IFSC
Subjects: MATÉRIA CONDENSADA, SEMICONDUTORES
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ABNT
LA SCALA JUNIOR, N et al. Electron heating effects in a free standing wire observed by universal conductance fluctuations. 1997, Anais.. Águas de Lindóia: Instituto de Física de São Carlos, Universidade de São Paulo, 1997. . Acesso em: 09 nov. 2024.
APA
La Scala Junior, N., Gusev, G. M., Lubyshev, D. I., González-Borrero, P. P., Rossi, J. C., Silva, M. de A. P. da, et al. (1997). Electron heating effects in a free standing wire observed by universal conductance fluctuations. In Program and Abstracts. Águas de Lindóia: Instituto de Física de São Carlos, Universidade de São Paulo.
NLM
La Scala Junior N, Gusev GM, Lubyshev DI, González-Borrero PP, Rossi JC, Silva M de AP da, Maude DK, Portal JC, Basmaji P. Electron heating effects in a free standing wire observed by universal conductance fluctuations. Program and Abstracts. 1997 ;[citado 2024 nov. 09 ]
Vancouver
La Scala Junior N, Gusev GM, Lubyshev DI, González-Borrero PP, Rossi JC, Silva M de AP da, Maude DK, Portal JC, Basmaji P. Electron heating effects in a free standing wire observed by universal conductance fluctuations. Program and Abstracts. 1997 ;[citado 2024 nov. 09 ]
Trabalho de evento-resumo
Kinetic limit of segregation during the molecular beam epitaxy of GaAs/AlAs heterostructures (1997)
Zanelatto, G; Pusep, Yuri A ; Lubyshev, D I; Galzerani, J C; Basmaji, Pierre
Conference titles: International Conference on Superlattices, Microructures, and Microdevices. Unidade: IFSC
Subjects: MATÉRIA CONDENSADA, MATÉRIA CONDENSADA
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ABNT
ZANELATTO, G et al. Kinetic limit of segregation during the molecular beam epitaxy of GaAs/AlAs heterostructures. 1997, Anais.. Lincoln: University of Nebraska, 1997. . Acesso em: 09 nov. 2024.
APA
Zanelatto, G., Pusep, Y. A., Lubyshev, D. I., Galzerani, J. C., & Basmaji, P. (1997). Kinetic limit of segregation during the molecular beam epitaxy of GaAs/AlAs heterostructures. In . Lincoln: University of Nebraska.
NLM
Zanelatto G, Pusep YA, Lubyshev DI, Galzerani JC, Basmaji P. Kinetic limit of segregation during the molecular beam epitaxy of GaAs/AlAs heterostructures. 1997 ;[citado 2024 nov. 09 ]
Vancouver
Zanelatto G, Pusep YA, Lubyshev DI, Galzerani JC, Basmaji P. Kinetic limit of segregation during the molecular beam epitaxy of GaAs/AlAs heterostructures. 1997 ;[citado 2024 nov. 09 ]
Trabalho de evento-resumo
Vertically stacked self-assembled 'IN''GA''AS' quantum dot layers grown on (311)a / b and (001) orientations (1997)
González-Borrero, P P; Petitprez, E; Lubyshev, D I; Marega Junior, Euclydes ; Basmaji, Pierre
Source: Program and Abstracts. Conference titles: Brazilian Workshop on Semiconductor Physics. Unidade: IFSC
Assunto: MATÉRIA CONDENSADA
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
GONZÁLEZ-BORRERO, P P et al. Vertically stacked self-assembled 'IN''GA''AS' quantum dot layers grown on (311)a / b and (001) orientations. 1997, Anais.. Águas de Lindóia: Instituto de Física de São Carlos, Universidade de São Paulo, 1997. . Acesso em: 09 nov. 2024.
APA
González-Borrero, P. P., Petitprez, E., Lubyshev, D. I., Marega Junior, E., & Basmaji, P. (1997). Vertically stacked self-assembled 'IN''GA''AS' quantum dot layers grown on (311)a / b and (001) orientations. In Program and Abstracts. Águas de Lindóia: Instituto de Física de São Carlos, Universidade de São Paulo.
NLM
González-Borrero PP, Petitprez E, Lubyshev DI, Marega Junior E, Basmaji P. Vertically stacked self-assembled 'IN''GA''AS' quantum dot layers grown on (311)a / b and (001) orientations. Program and Abstracts. 1997 ;[citado 2024 nov. 09 ]
Vancouver
González-Borrero PP, Petitprez E, Lubyshev DI, Marega Junior E, Basmaji P. Vertically stacked self-assembled 'IN''GA''AS' quantum dot layers grown on (311)a / b and (001) orientations. Program and Abstracts. 1997 ;[citado 2024 nov. 09 ]
Artigo de periodico
Temperature dependence of the quantization energy in self-assembled 'IN''GA''AS' quantum dots (1997)
Lubyshev, D I; Pusep, Yuri A ; González-Borrero, P P; Marega Junior, Euclydes ; Petitprez, E; La Scala Junior, N; Basmaji, Pierre
Source: Brazilian Journal of Physics. Unidade: IFSC
Assunto: MATÉRIA CONDENSADA
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ABNT
LUBYSHEV, D I et al. Temperature dependence of the quantization energy in self-assembled 'IN''GA''AS' quantum dots. Brazilian Journal of Physics, v. 27, n. 1 , p. 11-3, 1997Tradução . . Acesso em: 09 nov. 2024.
APA
Lubyshev, D. I., Pusep, Y. A., González-Borrero, P. P., Marega Junior, E., Petitprez, E., La Scala Junior, N., & Basmaji, P. (1997). Temperature dependence of the quantization energy in self-assembled 'IN''GA''AS' quantum dots. Brazilian Journal of Physics, 27( 1 ), 11-3.
NLM
Lubyshev DI, Pusep YA, González-Borrero PP, Marega Junior E, Petitprez E, La Scala Junior N, Basmaji P. Temperature dependence of the quantization energy in self-assembled 'IN''GA''AS' quantum dots. Brazilian Journal of Physics. 1997 ;27( 1 ): 11-3.[citado 2024 nov. 09 ]
Vancouver
Lubyshev DI, Pusep YA, González-Borrero PP, Marega Junior E, Petitprez E, La Scala Junior N, Basmaji P. Temperature dependence of the quantization energy in self-assembled 'IN''GA''AS' quantum dots. Brazilian Journal of Physics. 1997 ;27( 1 ): 11-3.[citado 2024 nov. 09 ]
Artigo de periodico
Molecular-beam expitaxy of self-assembled InAs quantum dots on non-(1 0 0) oriented GaAs (1997)
Gonzalez-Borrero, Pedro P; Marega Junior, Euclydes ; Lubyshev, D I; Petitprez, E; Basmaji, Pierre
Source: Journal of Crystal Growth. Unidade: IFSC
Subjects: MATÉRIA CONDENSADA, MATÉRIA CONDENSADA (PROPRIEDADES ELÉTRICAS)
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
GONZALEZ-BORRERO, Pedro P et al. Molecular-beam expitaxy of self-assembled InAs quantum dots on non-(1 0 0) oriented GaAs. Journal of Crystal Growth, v. 175-176, p. 765-770, 1997Tradução . . Disponível em: https://doi.org/10.1016/s0022-0248(96)01182-7. Acesso em: 09 nov. 2024.
APA
Gonzalez-Borrero, P. P., Marega Junior, E., Lubyshev, D. I., Petitprez, E., & Basmaji, P. (1997). Molecular-beam expitaxy of self-assembled InAs quantum dots on non-(1 0 0) oriented GaAs. Journal of Crystal Growth, 175-176, 765-770. doi:10.1016/s0022-0248(96)01182-7
NLM
Gonzalez-Borrero PP, Marega Junior E, Lubyshev DI, Petitprez E, Basmaji P. Molecular-beam expitaxy of self-assembled InAs quantum dots on non-(1 0 0) oriented GaAs [Internet]. Journal of Crystal Growth. 1997 ; 175-176 765-770.[citado 2024 nov. 09 ] Available from: https://doi.org/10.1016/s0022-0248(96)01182-7
Vancouver
Gonzalez-Borrero PP, Marega Junior E, Lubyshev DI, Petitprez E, Basmaji P. Molecular-beam expitaxy of self-assembled InAs quantum dots on non-(1 0 0) oriented GaAs [Internet]. Journal of Crystal Growth. 1997 ; 175-176 765-770.[citado 2024 nov. 09 ] Available from: https://doi.org/10.1016/s0022-0248(96)01182-7
Trabalho de evento-resumo
Photoluminescence study of excitons in the differently oriented self-assembled InAs and In IND.0.5Ga IND.0.5As quantum dots (1997)
Pusep, Yuri A ; Silva, S W da; Galzerani, J C; Lubyshev, D I; González-Borrero, P P; Marega Junior, Euclydes ; Petitprez, E; La Scala Júnior, Newton; Basmaji, Pierre
Conference titles: International Meeting on Optics of Excitons in Confined Systems. Unidade: IFSC
Assunto: MATÉRIA CONDENSADA
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
PUSEP, Yuri A et al. Photoluminescence study of excitons in the differently oriented self-assembled InAs and In IND.0.5Ga IND.0.5As quantum dots. 1997, Anais.. Gottingen: Instituto de Física de São Carlos, Universidade de São Paulo, 1997. . Acesso em: 09 nov. 2024.
APA
Pusep, Y. A., Silva, S. W. da, Galzerani, J. C., Lubyshev, D. I., González-Borrero, P. P., Marega Junior, E., et al. (1997). Photoluminescence study of excitons in the differently oriented self-assembled InAs and In IND.0.5Ga IND.0.5As quantum dots. In . Gottingen: Instituto de Física de São Carlos, Universidade de São Paulo.
NLM
Pusep YA, Silva SW da, Galzerani JC, Lubyshev DI, González-Borrero PP, Marega Junior E, Petitprez E, La Scala Júnior N, Basmaji P. Photoluminescence study of excitons in the differently oriented self-assembled InAs and In IND.0.5Ga IND.0.5As quantum dots. 1997 ;[citado 2024 nov. 09 ]
Vancouver
Pusep YA, Silva SW da, Galzerani JC, Lubyshev DI, González-Borrero PP, Marega Junior E, Petitprez E, La Scala Júnior N, Basmaji P. Photoluminescence study of excitons in the differently oriented self-assembled InAs and In IND.0.5Ga IND.0.5As quantum dots. 1997 ;[citado 2024 nov. 09 ]
Artigo de periodico
Photoluminescence study of spin-orbit-split bound electron states in self-assembled 'IN''AS' and 'IN IND.0.5''GA IND.0.5''AS' quantum dots (1997)
Silva, S W; Pusep, Yuri A ; Galzerani, J C; Lubyshev, D I; González-Borrero, P P; Basmaji, Pierre
Source: Journal of Physics: Condensed Matter. Unidade: IFSC
Assunto: MATÉRIA CONDENSADA
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
SILVA, S W et al. Photoluminescence study of spin-orbit-split bound electron states in self-assembled 'IN''AS' and 'IN IND.0.5''GA IND.0.5''AS' quantum dots. Journal of Physics: Condensed Matter, v. 9 , p. L13-17, 1997Tradução . . Acesso em: 09 nov. 2024.
APA
Silva, S. W., Pusep, Y. A., Galzerani, J. C., Lubyshev, D. I., González-Borrero, P. P., & Basmaji, P. (1997). Photoluminescence study of spin-orbit-split bound electron states in self-assembled 'IN''AS' and 'IN IND.0.5''GA IND.0.5''AS' quantum dots. Journal of Physics: Condensed Matter, 9 , L13-17.
NLM
Silva SW, Pusep YA, Galzerani JC, Lubyshev DI, González-Borrero PP, Basmaji P. Photoluminescence study of spin-orbit-split bound electron states in self-assembled 'IN''AS' and 'IN IND.0.5''GA IND.0.5''AS' quantum dots. Journal of Physics: Condensed Matter. 1997 ; 9 L13-17.[citado 2024 nov. 09 ]
Vancouver
Silva SW, Pusep YA, Galzerani JC, Lubyshev DI, González-Borrero PP, Basmaji P. Photoluminescence study of spin-orbit-split bound electron states in self-assembled 'IN''AS' and 'IN IND.0.5''GA IND.0.5''AS' quantum dots. Journal of Physics: Condensed Matter. 1997 ; 9 L13-17.[citado 2024 nov. 09 ]
Trabalho de evento-resumo
Preparação química de superfícies de GaAs nos planos (n11) A e B (1997)
Alves, M V; Rodrigues, S G; Basmaji, Pierre; Lubyshev, D I; Marega Junior, Euclydes
Conference titles: Encontro Nacional de Física da Matéria Condensada. Unidade: IFSC
Assunto: MATÉRIA CONDENSADA
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
ALVES, M V et al. Preparação química de superfícies de GaAs nos planos (n11) A e B. 1997, Anais.. São Paulo: Sociedade Brasileira de Física - SBF, 1997. . Acesso em: 09 nov. 2024.
APA
Alves, M. V., Rodrigues, S. G., Basmaji, P., Lubyshev, D. I., & Marega Junior, E. (1997). Preparação química de superfícies de GaAs nos planos (n11) A e B. In . São Paulo: Sociedade Brasileira de Física - SBF.
NLM
Alves MV, Rodrigues SG, Basmaji P, Lubyshev DI, Marega Junior E. Preparação química de superfícies de GaAs nos planos (n11) A e B. 1997 ;[citado 2024 nov. 09 ]
Vancouver
Alves MV, Rodrigues SG, Basmaji P, Lubyshev DI, Marega Junior E. Preparação química de superfícies de GaAs nos planos (n11) A e B. 1997 ;[citado 2024 nov. 09 ]
Trabalho de evento-resumo
Kinetic limit of segregation during the molecular beam epitaxy of 'GA''AS' / 'AL''AS' heterostructures (1997)
Zanelatto, G; Pusep, Yuri A ; Lubyshev, D I; Galzerani, J C; Basmaji, Pierre
Source: Program and Abstracts. Conference titles: Brazilian Workshop on Semiconductor Physics. Unidade: IFSC
Subjects: MATÉRIA CONDENSADA, MATÉRIA CONDENSADA
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
ZANELATTO, G et al. Kinetic limit of segregation during the molecular beam epitaxy of 'GA''AS' / 'AL''AS' heterostructures. 1997, Anais.. Águas de Lindóia: Instituto de Física de São Carlos, Universidade de São Paulo, 1997. . Acesso em: 09 nov. 2024.
APA
Zanelatto, G., Pusep, Y. A., Lubyshev, D. I., Galzerani, J. C., & Basmaji, P. (1997). Kinetic limit of segregation during the molecular beam epitaxy of 'GA''AS' / 'AL''AS' heterostructures. In Program and Abstracts. Águas de Lindóia: Instituto de Física de São Carlos, Universidade de São Paulo.
NLM
Zanelatto G, Pusep YA, Lubyshev DI, Galzerani JC, Basmaji P. Kinetic limit of segregation during the molecular beam epitaxy of 'GA''AS' / 'AL''AS' heterostructures. Program and Abstracts. 1997 ;[citado 2024 nov. 09 ]
Vancouver
Zanelatto G, Pusep YA, Lubyshev DI, Galzerani JC, Basmaji P. Kinetic limit of segregation during the molecular beam epitaxy of 'GA''AS' / 'AL''AS' heterostructures. Program and Abstracts. 1997 ;[citado 2024 nov. 09 ]

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