Filtros : "Journal of Applied Physics" "2000" Limpar

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  • Fonte: Journal of Applied Physics. Unidade: IFSC

    Assunto: DIELÉTRICOS

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      LANFREDI, S. e CARVALHO, J. F. e HERNANDES, Antônio Carlos. Electric and dielectric properties of 'Bi IND.12'Ti'O IND.20'single crystals. Journal of Applied Physics, v. 88, n. 1, p. 283-287, 2000Tradução . . Acesso em: 10 nov. 2025.
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      Lanfredi, S., Carvalho, J. F., & Hernandes, A. C. (2000). Electric and dielectric properties of 'Bi IND.12'Ti'O IND.20'single crystals. Journal of Applied Physics, 88( 1), 283-287.
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      Lanfredi S, Carvalho JF, Hernandes AC. Electric and dielectric properties of 'Bi IND.12'Ti'O IND.20'single crystals. Journal of Applied Physics. 2000 ; 88( 1): 283-287.[citado 2025 nov. 10 ]
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      Lanfredi S, Carvalho JF, Hernandes AC. Electric and dielectric properties of 'Bi IND.12'Ti'O IND.20'single crystals. Journal of Applied Physics. 2000 ; 88( 1): 283-287.[citado 2025 nov. 10 ]
  • Fonte: Journal of Applied Physics. Unidade: IFSC

    Assuntos: DESCARGA ELÉTRICA, MATÉRIA CONDENSADA (PROPRIEDADES ELÉTRICAS), DIELÉTRICOS

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      JOB, Aldo Eloizo et al. Doping of polyaniline by corona discharge. Journal of Applied Physics, v. 87, n. 8, p. 3878-3882, 2000Tradução . . Disponível em: https://doi.org/10.1063/1.372428. Acesso em: 10 nov. 2025.
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      Job, A. E., Giacometti, J. A., Herrmann, P. S. de P., & Mattoso, L. H. C. (2000). Doping of polyaniline by corona discharge. Journal of Applied Physics, 87( 8), 3878-3882. doi:10.1063/1.372428
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      Job AE, Giacometti JA, Herrmann PS de P, Mattoso LHC. Doping of polyaniline by corona discharge [Internet]. Journal of Applied Physics. 2000 ; 87( 8): 3878-3882.[citado 2025 nov. 10 ] Available from: https://doi.org/10.1063/1.372428
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      Job AE, Giacometti JA, Herrmann PS de P, Mattoso LHC. Doping of polyaniline by corona discharge [Internet]. Journal of Applied Physics. 2000 ; 87( 8): 3878-3882.[citado 2025 nov. 10 ] Available from: https://doi.org/10.1063/1.372428
  • Fonte: Journal of Applied Physics. Unidade: IFSC

    Assunto: MATÉRIA CONDENSADA

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      PUSEP, Yuri A et al. Raman measurements of vertical conductivity and localization effects in strongly coupled semiconductor periodical structures. Journal of Applied Physics, v. 87, n. 4, p. 1825-1831, 2000Tradução . . Disponível em: https://doi.org/10.1063/1.372097. Acesso em: 10 nov. 2025.
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      Pusep, Y. A., Silva, M. T. O., Galzerani, J. C., Rodrigues, S. C. P., Scolfaro, L. M. R., Lima, A. P., et al. (2000). Raman measurements of vertical conductivity and localization effects in strongly coupled semiconductor periodical structures. Journal of Applied Physics, 87( 4), 1825-1831. doi:10.1063/1.372097
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      Pusep YA, Silva MTO, Galzerani JC, Rodrigues SCP, Scolfaro LMR, Lima AP, Quivy AA, Leite JR, Moshegov NT, Basmaji P. Raman measurements of vertical conductivity and localization effects in strongly coupled semiconductor periodical structures [Internet]. Journal of Applied Physics. 2000 ; 87( 4): 1825-1831.[citado 2025 nov. 10 ] Available from: https://doi.org/10.1063/1.372097
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      Pusep YA, Silva MTO, Galzerani JC, Rodrigues SCP, Scolfaro LMR, Lima AP, Quivy AA, Leite JR, Moshegov NT, Basmaji P. Raman measurements of vertical conductivity and localization effects in strongly coupled semiconductor periodical structures [Internet]. Journal of Applied Physics. 2000 ; 87( 4): 1825-1831.[citado 2025 nov. 10 ] Available from: https://doi.org/10.1063/1.372097
  • Fonte: Journal of Applied Physics. Unidades: IF, IFSC

    Assunto: FÍSICA

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      PUSEP, Yuri A et al. Raman measurement of vertical conductivity and localization effects in strongly coupled semiconductor periodical structures. Journal of Applied Physics, v. 87, n. 4, p. 1825-1831, 2000Tradução . . Disponível em: https://doi.org/10.1063/1.372097. Acesso em: 10 nov. 2025.
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      Pusep, Y. A., Silva, M. T. O., Galzerani, J. C., Rodrigues, S. C. P., Scolfaro, L. M. R., Lima, A. P., et al. (2000). Raman measurement of vertical conductivity and localization effects in strongly coupled semiconductor periodical structures. Journal of Applied Physics, 87( 4), 1825-1831. doi:10.1063/1.372097
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      Pusep YA, Silva MTO, Galzerani JC, Rodrigues SCP, Scolfaro LMR, Lima AP, Quivy AA, Leite JR, Moshegov NT, Basmaji P. Raman measurement of vertical conductivity and localization effects in strongly coupled semiconductor periodical structures [Internet]. Journal of Applied Physics. 2000 ; 87( 4): 1825-1831.[citado 2025 nov. 10 ] Available from: https://doi.org/10.1063/1.372097
    • Vancouver

      Pusep YA, Silva MTO, Galzerani JC, Rodrigues SCP, Scolfaro LMR, Lima AP, Quivy AA, Leite JR, Moshegov NT, Basmaji P. Raman measurement of vertical conductivity and localization effects in strongly coupled semiconductor periodical structures [Internet]. Journal of Applied Physics. 2000 ; 87( 4): 1825-1831.[citado 2025 nov. 10 ] Available from: https://doi.org/10.1063/1.372097
  • Fonte: Journal of Applied Physics. Unidade: IF

    Assunto: FÍSICA

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      CORNEJO, Daniel Reinaldo e MISSELL, Frank Patrick. Preisach analysis of reversible magnetization in SmCo/Fe films. Journal of Applied Physics, v. 87, n. 9, p. 4741-4743, 2000Tradução . . Disponível em: https://doi.org/10.1063/1.373144. Acesso em: 10 nov. 2025.
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      Cornejo, D. R., & Missell, F. P. (2000). Preisach analysis of reversible magnetization in SmCo/Fe films. Journal of Applied Physics, 87( 9), 4741-4743. doi:10.1063/1.373144
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      Cornejo DR, Missell FP. Preisach analysis of reversible magnetization in SmCo/Fe films [Internet]. Journal of Applied Physics. 2000 ; 87( 9): 4741-4743.[citado 2025 nov. 10 ] Available from: https://doi.org/10.1063/1.373144
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      Cornejo DR, Missell FP. Preisach analysis of reversible magnetization in SmCo/Fe films [Internet]. Journal of Applied Physics. 2000 ; 87( 9): 4741-4743.[citado 2025 nov. 10 ] Available from: https://doi.org/10.1063/1.373144
  • Fonte: Journal of Applied Physics. Unidade: EESC

    Assunto: MATÉRIA CONDENSADA (PROPRIEDADES MECÂNICAS)

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      PIZANI, P S et al. Raman characterization of structural disorder and residual strains in micromachined 'GA''AS'. Journal of Applied Physics, v. 87, n. 3, p. 1280-1283, 2000Tradução . . Disponível em: https://doi.org/10.1063/1.372009. Acesso em: 10 nov. 2025.
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      Pizani, P. S., Lanciotti Jr., F., Jasinevicius, R. G., Duduch, J. G., & Porto, A. J. V. (2000). Raman characterization of structural disorder and residual strains in micromachined 'GA''AS'. Journal of Applied Physics, 87( 3), 1280-1283. doi:10.1063/1.372009
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      Pizani PS, Lanciotti Jr. F, Jasinevicius RG, Duduch JG, Porto AJV. Raman characterization of structural disorder and residual strains in micromachined 'GA''AS' [Internet]. Journal of Applied Physics. 2000 ; 87( 3): 1280-1283.[citado 2025 nov. 10 ] Available from: https://doi.org/10.1063/1.372009
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      Pizani PS, Lanciotti Jr. F, Jasinevicius RG, Duduch JG, Porto AJV. Raman characterization of structural disorder and residual strains in micromachined 'GA''AS' [Internet]. Journal of Applied Physics. 2000 ; 87( 3): 1280-1283.[citado 2025 nov. 10 ] Available from: https://doi.org/10.1063/1.372009
  • Fonte: Journal of Applied Physics. Unidade: IF

    Assunto: FÍSICA

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      MATSUOKA, Masao et al. Influence of ion energy and arrival rate on x-ray crystallographic properties of thin Zr'O IND.X' films prepared on Si(111) substrate by ion-beam assisted deposition. Journal of Applied Physics, v. 88, n. 6, p. 3773-3775, 2000Tradução . . Disponível em: https://doi.org/10.1063/1.1286108. Acesso em: 10 nov. 2025.
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      Matsuoka, M., Isotani, S., Chubaci, J. F. D., Miyake, S., Setsuhara, Y., Ogata, K., & Kuratani, N. (2000). Influence of ion energy and arrival rate on x-ray crystallographic properties of thin Zr'O IND.X' films prepared on Si(111) substrate by ion-beam assisted deposition. Journal of Applied Physics, 88( 6), 3773-3775. doi:10.1063/1.1286108
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      Matsuoka M, Isotani S, Chubaci JFD, Miyake S, Setsuhara Y, Ogata K, Kuratani N. Influence of ion energy and arrival rate on x-ray crystallographic properties of thin Zr'O IND.X' films prepared on Si(111) substrate by ion-beam assisted deposition [Internet]. Journal of Applied Physics. 2000 ; 88( 6): 3773-3775.[citado 2025 nov. 10 ] Available from: https://doi.org/10.1063/1.1286108
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      Matsuoka M, Isotani S, Chubaci JFD, Miyake S, Setsuhara Y, Ogata K, Kuratani N. Influence of ion energy and arrival rate on x-ray crystallographic properties of thin Zr'O IND.X' films prepared on Si(111) substrate by ion-beam assisted deposition [Internet]. Journal of Applied Physics. 2000 ; 88( 6): 3773-3775.[citado 2025 nov. 10 ] Available from: https://doi.org/10.1063/1.1286108
  • Fonte: Journal of Applied Physics. Unidade: IFSC

    Assunto: MATÉRIA CONDENSADA

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      BELL, M. J. V. e SOUZA, D. F. e NUNES, Luiz Antônio de Oliveira. Looping mechanism in Er-doped fluoroindogallate glasses. Journal of Applied Physics, v. 87, n. 12, p. 8264-8267, 2000Tradução . . Disponível em: https://doi.org/10.1063/1.373536. Acesso em: 10 nov. 2025.
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      Bell, M. J. V., Souza, D. F., & Nunes, L. A. de O. (2000). Looping mechanism in Er-doped fluoroindogallate glasses. Journal of Applied Physics, 87( 12), 8264-8267. doi:10.1063/1.373536
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      Bell MJV, Souza DF, Nunes LA de O. Looping mechanism in Er-doped fluoroindogallate glasses [Internet]. Journal of Applied Physics. 2000 ; 87( 12): 8264-8267.[citado 2025 nov. 10 ] Available from: https://doi.org/10.1063/1.373536
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      Bell MJV, Souza DF, Nunes LA de O. Looping mechanism in Er-doped fluoroindogallate glasses [Internet]. Journal of Applied Physics. 2000 ; 87( 12): 8264-8267.[citado 2025 nov. 10 ] Available from: https://doi.org/10.1063/1.373536
  • Fonte: Journal of Applied Physics. Unidade: IF

    Assunto: FÍSICA

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      GOYA, G. F. et al. Magnetic irreversibility in ultrafine Zn'Fe IND.2''O IND.4'. Journal of Applied Physics, v. 87, n. 11, p. 8005-8007, 2000Tradução . . Disponível em: http://ojps.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=JAPIAU000087000011008005000001&idtype=cvips. Acesso em: 10 nov. 2025.
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      Goya, G. F., Rechenberg, H. R., Chen, M., & Yelon, W. B. (2000). Magnetic irreversibility in ultrafine Zn'Fe IND.2''O IND.4'. Journal of Applied Physics, 87( 11), 8005-8007. Recuperado de http://ojps.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=JAPIAU000087000011008005000001&idtype=cvips
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      Goya GF, Rechenberg HR, Chen M, Yelon WB. Magnetic irreversibility in ultrafine Zn'Fe IND.2''O IND.4' [Internet]. Journal of Applied Physics. 2000 ; 87( 11): 8005-8007.[citado 2025 nov. 10 ] Available from: http://ojps.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=JAPIAU000087000011008005000001&idtype=cvips
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      Goya GF, Rechenberg HR, Chen M, Yelon WB. Magnetic irreversibility in ultrafine Zn'Fe IND.2''O IND.4' [Internet]. Journal of Applied Physics. 2000 ; 87( 11): 8005-8007.[citado 2025 nov. 10 ] Available from: http://ojps.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=JAPIAU000087000011008005000001&idtype=cvips
  • Fonte: Journal of Applied Physics. Unidade: IF

    Assunto: FÍSICA

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      MURAKAMI, Regina Keiko et al. Structural and magnetic properties of the exchange-coupled PrFeB alloys. Journal of Applied Physics, v. 87, n. 9, p. 6582-6584, 2000Tradução . . Disponível em: https://doi.org/10.1063/1.372777. Acesso em: 10 nov. 2025.
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      Murakami, R. K., Villas-Boas, V., Chen, M., & Yelon, W. B. (2000). Structural and magnetic properties of the exchange-coupled PrFeB alloys. Journal of Applied Physics, 87( 9), 6582-6584. doi:10.1063/1.372777
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      Murakami RK, Villas-Boas V, Chen M, Yelon WB. Structural and magnetic properties of the exchange-coupled PrFeB alloys [Internet]. Journal of Applied Physics. 2000 ; 87( 9): 6582-6584.[citado 2025 nov. 10 ] Available from: https://doi.org/10.1063/1.372777
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      Murakami RK, Villas-Boas V, Chen M, Yelon WB. Structural and magnetic properties of the exchange-coupled PrFeB alloys [Internet]. Journal of Applied Physics. 2000 ; 87( 9): 6582-6584.[citado 2025 nov. 10 ] Available from: https://doi.org/10.1063/1.372777
  • Fonte: Journal of Applied Physics. Unidade: IF

    Assunto: FÍSICA

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      ESCOTE, M T e WESTPHAL, Carlos Henrique e JARDIM, Renato de Figueiredo. Magnetic properties of polycrystalline Ln'Ni IND.0.3''Co IND.0.7''O IND.3' (Ln=La, P) compounds. Journal of Applied Physics, v. 87, n. 9, p. 5908-5910, 2000Tradução . . Disponível em: http://ojps.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=JAPIAU000087000009005908000001&idtype=cvips. Acesso em: 10 nov. 2025.
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      Escote, M. T., Westphal, C. H., & Jardim, R. de F. (2000). Magnetic properties of polycrystalline Ln'Ni IND.0.3''Co IND.0.7''O IND.3' (Ln=La, P) compounds. Journal of Applied Physics, 87( 9), 5908-5910. Recuperado de http://ojps.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=JAPIAU000087000009005908000001&idtype=cvips
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      Escote MT, Westphal CH, Jardim R de F. Magnetic properties of polycrystalline Ln'Ni IND.0.3''Co IND.0.7''O IND.3' (Ln=La, P) compounds [Internet]. Journal of Applied Physics. 2000 ; 87( 9): 5908-5910.[citado 2025 nov. 10 ] Available from: http://ojps.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=JAPIAU000087000009005908000001&idtype=cvips
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      Escote MT, Westphal CH, Jardim R de F. Magnetic properties of polycrystalline Ln'Ni IND.0.3''Co IND.0.7''O IND.3' (Ln=La, P) compounds [Internet]. Journal of Applied Physics. 2000 ; 87( 9): 5908-5910.[citado 2025 nov. 10 ] Available from: http://ojps.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=JAPIAU000087000009005908000001&idtype=cvips
  • Fonte: Journal of Applied Physics. Unidade: IF

    Assunto: FÍSICA

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      CHU, Z et al. Site occupancy of Sm in '('Nd IND.1-X''Sm IND.X') IND.5' '(Fe IND.1-Y''Ti IND.Y')'. Journal of Applied Physics, v. 87, n. 9, p. 6704-6706, 2000Tradução . . Disponível em: http://ojps.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=JAPIAU000087000009006704000001&idtype=cvips. Acesso em: 10 nov. 2025.
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      Chu, Z., Yelon, W. B., Missell, F. P., & Murakami, R. K. (2000). Site occupancy of Sm in '('Nd IND.1-X''Sm IND.X') IND.5' '(Fe IND.1-Y''Ti IND.Y')'. Journal of Applied Physics, 87( 9), 6704-6706. Recuperado de http://ojps.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=JAPIAU000087000009006704000001&idtype=cvips
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      Chu Z, Yelon WB, Missell FP, Murakami RK. Site occupancy of Sm in '('Nd IND.1-X''Sm IND.X') IND.5' '(Fe IND.1-Y''Ti IND.Y')' [Internet]. Journal of Applied Physics. 2000 ; 87( 9): 6704-6706.[citado 2025 nov. 10 ] Available from: http://ojps.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=JAPIAU000087000009006704000001&idtype=cvips
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      Chu Z, Yelon WB, Missell FP, Murakami RK. Site occupancy of Sm in '('Nd IND.1-X''Sm IND.X') IND.5' '(Fe IND.1-Y''Ti IND.Y')' [Internet]. Journal of Applied Physics. 2000 ; 87( 9): 6704-6706.[citado 2025 nov. 10 ] Available from: http://ojps.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=JAPIAU000087000009006704000001&idtype=cvips
  • Fonte: Journal of Applied Physics. Unidade: IF

    Assunto: FÍSICA

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      EMURA, Marilia e CORNEJO, Daniel Reinaldo e MISSELL, Frank Patrick. Reversible and irreversible magnetization in hybrid magnets. Journal of Applied Physics, v. 87, n. 3, p. 1387-1394, 2000Tradução . . Disponível em: https://doi.org/10.1063/1.372025. Acesso em: 10 nov. 2025.
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      Emura, M., Cornejo, D. R., & Missell, F. P. (2000). Reversible and irreversible magnetization in hybrid magnets. Journal of Applied Physics, 87( 3), 1387-1394. doi:10.1063/1.372025
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      Emura M, Cornejo DR, Missell FP. Reversible and irreversible magnetization in hybrid magnets [Internet]. Journal of Applied Physics. 2000 ; 87( 3): 1387-1394.[citado 2025 nov. 10 ] Available from: https://doi.org/10.1063/1.372025
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      Emura M, Cornejo DR, Missell FP. Reversible and irreversible magnetization in hybrid magnets [Internet]. Journal of Applied Physics. 2000 ; 87( 3): 1387-1394.[citado 2025 nov. 10 ] Available from: https://doi.org/10.1063/1.372025

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