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Artigo de periodico
Driven electron g-factor anisotropy in layered III–V semiconductors: interfacing, tunnel coupling, and structure inversion asymmetry effects (2024)
Sandoval, Marcelo Alejandro Toloza ; Padilla, Jhon Elber Leon ; Wanderley, Adilson Barros ; Sipahi, Guilherme Matos ; Chubaci, José Fernando Diniz ; Silva, Antonio Ferreira da
Source: Journal of Applied Physics. Unidades: IFSC, IF
Subjects: APRENDIZADO COMPUTACIONAL, SEMICONDUTORES
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ABNT
SANDOVAL, Marcelo Alejandro Toloza et al. Driven electron g-factor anisotropy in layered III–V semiconductors: interfacing, tunnel coupling, and structure inversion asymmetry effects. Journal of Applied Physics, v. 135, n. 10, p. 103901-1-103901-9, 2024Tradução . . Disponível em: https://doi.org/10.1063/5.0187962. Acesso em: 09 nov. 2025.
APA
Sandoval, M. A. T., Padilla, J. E. L., Wanderley, A. B., Sipahi, G. M., Chubaci, J. F. D., & Silva, A. F. da. (2024). Driven electron g-factor anisotropy in layered III–V semiconductors: interfacing, tunnel coupling, and structure inversion asymmetry effects. Journal of Applied Physics, 135( 10), 103901-1-103901-9. doi:10.1063/5.0187962
NLM
Sandoval MAT, Padilla JEL, Wanderley AB, Sipahi GM, Chubaci JFD, Silva AF da. Driven electron g-factor anisotropy in layered III–V semiconductors: interfacing, tunnel coupling, and structure inversion asymmetry effects [Internet]. Journal of Applied Physics. 2024 ; 135( 10): 103901-1-103901-9.[citado 2025 nov. 09 ] Available from: https://doi.org/10.1063/5.0187962
Vancouver
Sandoval MAT, Padilla JEL, Wanderley AB, Sipahi GM, Chubaci JFD, Silva AF da. Driven electron g-factor anisotropy in layered III–V semiconductors: interfacing, tunnel coupling, and structure inversion asymmetry effects [Internet]. Journal of Applied Physics. 2024 ; 135( 10): 103901-1-103901-9.[citado 2025 nov. 09 ] Available from: https://doi.org/10.1063/5.0187962
Artigo de periodico
Characterization of a system that combines energy dispersive X-ray diffraction with X-ray fluorescence and its potential applications in archeometry (2019)
Santos, Hellen Cristine ; Silva, Tiago Fiorini da ; Leite, Alisson Rodolfo ; Assis, Renan Ferreira de; Campos, Pedro Herzilio Ottoni Viviani de ; Rizzutto, Marcia de Almeida ; Tabacniks, Manfredo Harri
Source: Journal of Applied Physics. Unidade: IF
Subjects: ÍONS, RAIOS X, FLUORESCÊNCIA, ENERGIA, DIFRAÇÃO POR RAIOS X
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ABNT
SANTOS, Hellen Cristine et al. Characterization of a system that combines energy dispersive X-ray diffraction with X-ray fluorescence and its potential applications in archeometry. Journal of Applied Physics, v. 126, n. 4, 2019Tradução . . Disponível em: https://doi.org/10.1063/1.5108746. Acesso em: 09 nov. 2025.
APA
Santos, H. C., Silva, T. F. da, Leite, A. R., Assis, R. F. de, Campos, P. H. O. V. de, Rizzutto, M. de A., & Tabacniks, M. H. (2019). Characterization of a system that combines energy dispersive X-ray diffraction with X-ray fluorescence and its potential applications in archeometry. Journal of Applied Physics, 126( 4). doi:10.1063/1.5108746
NLM
Santos HC, Silva TF da, Leite AR, Assis RF de, Campos PHOV de, Rizzutto M de A, Tabacniks MH. Characterization of a system that combines energy dispersive X-ray diffraction with X-ray fluorescence and its potential applications in archeometry [Internet]. Journal of Applied Physics. 2019 ; 126( 4):[citado 2025 nov. 09 ] Available from: https://doi.org/10.1063/1.5108746
Vancouver
Santos HC, Silva TF da, Leite AR, Assis RF de, Campos PHOV de, Rizzutto M de A, Tabacniks MH. Characterization of a system that combines energy dispersive X-ray diffraction with X-ray fluorescence and its potential applications in archeometry [Internet]. Journal of Applied Physics. 2019 ; 126( 4):[citado 2025 nov. 09 ] Available from: https://doi.org/10.1063/1.5108746
Artigo de periodico
Influence of ion energy and arrival rate on x-ray crystallographic properties of thin Zr'O IND.X' films prepared on Si(111) substrate by ion-beam assisted deposition (2000)
Matsuoka, Masao; Isotani, Sadao; Chubaci, José Fernando Diniz ; Miyake, S; Setsuhara, Y; Ogata, K; Kuratani, N
Source: Journal of Applied Physics. Unidade: IF
Assunto: FÍSICA
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ABNT
MATSUOKA, Masao et al. Influence of ion energy and arrival rate on x-ray crystallographic properties of thin Zr'O IND.X' films prepared on Si(111) substrate by ion-beam assisted deposition. Journal of Applied Physics, v. 88, n. 6, p. 3773-3775, 2000Tradução . . Disponível em: https://doi.org/10.1063/1.1286108. Acesso em: 09 nov. 2025.
APA
Matsuoka, M., Isotani, S., Chubaci, J. F. D., Miyake, S., Setsuhara, Y., Ogata, K., & Kuratani, N. (2000). Influence of ion energy and arrival rate on x-ray crystallographic properties of thin Zr'O IND.X' films prepared on Si(111) substrate by ion-beam assisted deposition. Journal of Applied Physics, 88( 6), 3773-3775. doi:10.1063/1.1286108
NLM
Matsuoka M, Isotani S, Chubaci JFD, Miyake S, Setsuhara Y, Ogata K, Kuratani N. Influence of ion energy and arrival rate on x-ray crystallographic properties of thin Zr'O IND.X' films prepared on Si(111) substrate by ion-beam assisted deposition [Internet]. Journal of Applied Physics. 2000 ; 88( 6): 3773-3775.[citado 2025 nov. 09 ] Available from: https://doi.org/10.1063/1.1286108
Vancouver
Matsuoka M, Isotani S, Chubaci JFD, Miyake S, Setsuhara Y, Ogata K, Kuratani N. Influence of ion energy and arrival rate on x-ray crystallographic properties of thin Zr'O IND.X' films prepared on Si(111) substrate by ion-beam assisted deposition [Internet]. Journal of Applied Physics. 2000 ; 88( 6): 3773-3775.[citado 2025 nov. 09 ] Available from: https://doi.org/10.1063/1.1286108
Artigo de periodico
Effects of ion energy and arrival rate on the composition of zirconium oxide films prepared by ion-beam assisted deposition (1996)
Matsuoka, Masao; Isotani, Sadao; Miyake, S; Setsuhara, Y; Ogata, K; Kuratani, N
Source: Journal of Applied Physics. Unidade: IF
Assunto: MATÉRIA CONDENSADA
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ABNT
MATSUOKA, Masao et al. Effects of ion energy and arrival rate on the composition of zirconium oxide films prepared by ion-beam assisted deposition. Journal of Applied Physics, v. 80, n. 2 , p. 1177, 1996Tradução . . Disponível em: https://doi.org/10.1063/1.362855. Acesso em: 09 nov. 2025.
APA
Matsuoka, M., Isotani, S., Miyake, S., Setsuhara, Y., Ogata, K., & Kuratani, N. (1996). Effects of ion energy and arrival rate on the composition of zirconium oxide films prepared by ion-beam assisted deposition. Journal of Applied Physics, 80( 2 ), 1177. doi:10.1063/1.362855
NLM
Matsuoka M, Isotani S, Miyake S, Setsuhara Y, Ogata K, Kuratani N. Effects of ion energy and arrival rate on the composition of zirconium oxide films prepared by ion-beam assisted deposition [Internet]. Journal of Applied Physics. 1996 ;80( 2 ): 1177.[citado 2025 nov. 09 ] Available from: https://doi.org/10.1063/1.362855
Vancouver
Matsuoka M, Isotani S, Miyake S, Setsuhara Y, Ogata K, Kuratani N. Effects of ion energy and arrival rate on the composition of zirconium oxide films prepared by ion-beam assisted deposition [Internet]. Journal of Applied Physics. 1996 ;80( 2 ): 1177.[citado 2025 nov. 09 ] Available from: https://doi.org/10.1063/1.362855
Artigo de periodico
Growth, microestructure and strain relaxation in low-temperature epitaxial 'SI IND.1-X' 'GE IND.X' alloys deposited on 'SI' (001) from hyperthermal beams (1996)
Lee, N E; Matsuoka, Masao; Sardela Junior, M R; Tian, F; Greene, J E
Source: Journal of Applied Physics. Unidade: IF
Assunto: MATÉRIA CONDENSADA
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ABNT
LEE, N E et al. Growth, microestructure and strain relaxation in low-temperature epitaxial 'SI IND.1-X' 'GE IND.X' alloys deposited on 'SI' (001) from hyperthermal beams. Journal of Applied Physics, v. 80, n. 2 , p. 812-21, 1996Tradução . . Acesso em: 09 nov. 2025.
APA
Lee, N. E., Matsuoka, M., Sardela Junior, M. R., Tian, F., & Greene, J. E. (1996). Growth, microestructure and strain relaxation in low-temperature epitaxial 'SI IND.1-X' 'GE IND.X' alloys deposited on 'SI' (001) from hyperthermal beams. Journal of Applied Physics, 80( 2 ), 812-21.
NLM
Lee NE, Matsuoka M, Sardela Junior MR, Tian F, Greene JE. Growth, microestructure and strain relaxation in low-temperature epitaxial 'SI IND.1-X' 'GE IND.X' alloys deposited on 'SI' (001) from hyperthermal beams. Journal of Applied Physics. 1996 ;80( 2 ): 812-21.[citado 2025 nov. 09 ]
Vancouver
Lee NE, Matsuoka M, Sardela Junior MR, Tian F, Greene JE. Growth, microestructure and strain relaxation in low-temperature epitaxial 'SI IND.1-X' 'GE IND.X' alloys deposited on 'SI' (001) from hyperthermal beams. Journal of Applied Physics. 1996 ;80( 2 ): 812-21.[citado 2025 nov. 09 ]

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