Growth, microestructure and strain relaxation in low-temperature epitaxial 'SI IND.1-X' 'GE IND.X' alloys deposited on 'SI' (001) from hyperthermal beams (1996)
- Authors:
- Autor USP: MATSUOKA, MASAO - IF
- Unidade: IF
- Assunto: MATÉRIA CONDENSADA
- Language: Inglês
- Imprenta:
- Source:
- Título: Journal of Applied Physics
- Volume/Número/Paginação/Ano: v.80, n.2 , p.812-21, 1996
-
ABNT
LEE, N E et al. Growth, microestructure and strain relaxation in low-temperature epitaxial 'SI IND.1-X' 'GE IND.X' alloys deposited on 'SI' (001) from hyperthermal beams. Journal of Applied Physics, v. 80, n. 2 , p. 812-21, 1996Tradução . . Acesso em: 30 dez. 2025. -
APA
Lee, N. E., Matsuoka, M., Sardela Junior, M. R., Tian, F., & Greene, J. E. (1996). Growth, microestructure and strain relaxation in low-temperature epitaxial 'SI IND.1-X' 'GE IND.X' alloys deposited on 'SI' (001) from hyperthermal beams. Journal of Applied Physics, 80( 2 ), 812-21. -
NLM
Lee NE, Matsuoka M, Sardela Junior MR, Tian F, Greene JE. Growth, microestructure and strain relaxation in low-temperature epitaxial 'SI IND.1-X' 'GE IND.X' alloys deposited on 'SI' (001) from hyperthermal beams. Journal of Applied Physics. 1996 ;80( 2 ): 812-21.[citado 2025 dez. 30 ] -
Vancouver
Lee NE, Matsuoka M, Sardela Junior MR, Tian F, Greene JE. Growth, microestructure and strain relaxation in low-temperature epitaxial 'SI IND.1-X' 'GE IND.X' alloys deposited on 'SI' (001) from hyperthermal beams. Journal of Applied Physics. 1996 ;80( 2 ): 812-21.[citado 2025 dez. 30 ]
How to cite
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas