ReP USP - Resultado da busca

Trabalho de evento-resumo
Vertically stacked self-assembled 'IN''GA''AS' quantum dot layers grown on (311)a / b and (001) orientations (1997)
González-Borrero, P P; Petitprez, E; Lubyshev, D I; Marega Junior, Euclydes ; Basmaji, Pierre
Source: Program and Abstracts. Conference titles: Brazilian Workshop on Semiconductor Physics. Unidade: IFSC
Assunto: MATÉRIA CONDENSADA
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
GONZÁLEZ-BORRERO, P P et al. Vertically stacked self-assembled 'IN''GA''AS' quantum dot layers grown on (311)a / b and (001) orientations. 1997, Anais.. Águas de Lindóia: Instituto de Física de São Carlos, Universidade de São Paulo, 1997. . Acesso em: 04 nov. 2025.
APA
González-Borrero, P. P., Petitprez, E., Lubyshev, D. I., Marega Junior, E., & Basmaji, P. (1997). Vertically stacked self-assembled 'IN''GA''AS' quantum dot layers grown on (311)a / b and (001) orientations. In Program and Abstracts. Águas de Lindóia: Instituto de Física de São Carlos, Universidade de São Paulo.
NLM
González-Borrero PP, Petitprez E, Lubyshev DI, Marega Junior E, Basmaji P. Vertically stacked self-assembled 'IN''GA''AS' quantum dot layers grown on (311)a / b and (001) orientations. Program and Abstracts. 1997 ;[citado 2025 nov. 04 ]
Vancouver
González-Borrero PP, Petitprez E, Lubyshev DI, Marega Junior E, Basmaji P. Vertically stacked self-assembled 'IN''GA''AS' quantum dot layers grown on (311)a / b and (001) orientations. Program and Abstracts. 1997 ;[citado 2025 nov. 04 ]
Trabalho de evento-resumo
Optical anisotropy in (311) 'IN IND.1-X''GA IND.X''AS' / 'GA''AS' quantum wells (1997)
Ribeiro, A. A; Narvaez, G A; Torriani, I C L; Cerdeira, F; Guimarães, Francisco Eduardo Gontijo ; Lubishev, D; Basmaji, Pierre
Source: Program and Abstracts. Conference titles: Brazilian Workshop on Semiconductor Physics. Unidade: IFSC
Assunto: MATÉRIA CONDENSADA
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
RIBEIRO, A. A et al. Optical anisotropy in (311) 'IN IND.1-X''GA IND.X''AS' / 'GA''AS' quantum wells. 1997, Anais.. Águas de Lindóia: Instituto de Física de São Carlos, Universidade de São Paulo, 1997. . Acesso em: 04 nov. 2025.
APA
Ribeiro, A. A., Narvaez, G. A., Torriani, I. C. L., Cerdeira, F., Guimarães, F. E. G., Lubishev, D., & Basmaji, P. (1997). Optical anisotropy in (311) 'IN IND.1-X''GA IND.X''AS' / 'GA''AS' quantum wells. In Program and Abstracts. Águas de Lindóia: Instituto de Física de São Carlos, Universidade de São Paulo.
NLM
Ribeiro AA, Narvaez GA, Torriani ICL, Cerdeira F, Guimarães FEG, Lubishev D, Basmaji P. Optical anisotropy in (311) 'IN IND.1-X''GA IND.X''AS' / 'GA''AS' quantum wells. Program and Abstracts. 1997 ;[citado 2025 nov. 04 ]
Vancouver
Ribeiro AA, Narvaez GA, Torriani ICL, Cerdeira F, Guimarães FEG, Lubishev D, Basmaji P. Optical anisotropy in (311) 'IN IND.1-X''GA IND.X''AS' / 'GA''AS' quantum wells. Program and Abstracts. 1997 ;[citado 2025 nov. 04 ]
Trabalho de evento-resumo
Kinetic limit of segregation during the molecular beam epitaxy of 'GA''AS' / 'AL''AS' heterostructures (1997)
Zanelatto, G; Pusep, Yuri A ; Lubyshev, D I; Galzerani, J C; Basmaji, Pierre
Source: Program and Abstracts. Conference titles: Brazilian Workshop on Semiconductor Physics. Unidade: IFSC
Subjects: MATÉRIA CONDENSADA, MATÉRIA CONDENSADA
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
ZANELATTO, G et al. Kinetic limit of segregation during the molecular beam epitaxy of 'GA''AS' / 'AL''AS' heterostructures. 1997, Anais.. Águas de Lindóia: Instituto de Física de São Carlos, Universidade de São Paulo, 1997. . Acesso em: 04 nov. 2025.
APA
Zanelatto, G., Pusep, Y. A., Lubyshev, D. I., Galzerani, J. C., & Basmaji, P. (1997). Kinetic limit of segregation during the molecular beam epitaxy of 'GA''AS' / 'AL''AS' heterostructures. In Program and Abstracts. Águas de Lindóia: Instituto de Física de São Carlos, Universidade de São Paulo.
NLM
Zanelatto G, Pusep YA, Lubyshev DI, Galzerani JC, Basmaji P. Kinetic limit of segregation during the molecular beam epitaxy of 'GA''AS' / 'AL''AS' heterostructures. Program and Abstracts. 1997 ;[citado 2025 nov. 04 ]
Vancouver
Zanelatto G, Pusep YA, Lubyshev DI, Galzerani JC, Basmaji P. Kinetic limit of segregation during the molecular beam epitaxy of 'GA''AS' / 'AL''AS' heterostructures. Program and Abstracts. 1997 ;[citado 2025 nov. 04 ]
Trabalho de evento-resumo
Study of 'GA''SB' and 'AL''SB' surface superstructure based on the (100) planes (1997)
Lubyshev, D I; González-Borrero, P P; Lubysheva, T B; Scala Junior, N; Marega Junior, Euclydes ; Basmaji, Pierre
Source: Program and Abstracts. Conference titles: Brazilian Workshop on Semiconductor Physics. Unidade: IFSC
Subjects: MATÉRIA CONDENSADA, MATÉRIA CONDENSADA (PROPRIEDADES ELÉTRICAS), SUPERFÍCIE FÍSICA
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
LUBYSHEV, D I et al. Study of 'GA''SB' and 'AL''SB' surface superstructure based on the (100) planes. 1997, Anais.. Águas de Lindóia: Instituto de Física de São Carlos, Universidade de São Paulo, 1997. . Acesso em: 04 nov. 2025.
APA
Lubyshev, D. I., González-Borrero, P. P., Lubysheva, T. B., Scala Junior, N., Marega Junior, E., & Basmaji, P. (1997). Study of 'GA''SB' and 'AL''SB' surface superstructure based on the (100) planes. In Program and Abstracts. Águas de Lindóia: Instituto de Física de São Carlos, Universidade de São Paulo.
NLM
Lubyshev DI, González-Borrero PP, Lubysheva TB, Scala Junior N, Marega Junior E, Basmaji P. Study of 'GA''SB' and 'AL''SB' surface superstructure based on the (100) planes. Program and Abstracts. 1997 ;[citado 2025 nov. 04 ]
Vancouver
Lubyshev DI, González-Borrero PP, Lubysheva TB, Scala Junior N, Marega Junior E, Basmaji P. Study of 'GA''SB' and 'AL''SB' surface superstructure based on the (100) planes. Program and Abstracts. 1997 ;[citado 2025 nov. 04 ]
Trabalho de evento-resumo
Charge transfer between percolation levels in a system with an artificial , strongly disordered potential (1994)
Gusev, G M; Gennser, U; Maude, D K; Portal, J C; Lubyshev, D I; Nastaushev, Y V; Rossi, J C; Basmaji, Pierre
Source: Program and Abstracts. Conference titles: International Conference on Superlattices Microstructures and Microdevices - ICSMM. Unidade: IFSC
Subjects: MATÉRIA CONDENSADA, MATÉRIA CONDENSADA (PROPRIEDADES ELÉTRICAS)
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
GUSEV, G M et al. Charge transfer between percolation levels in a system with an artificial , strongly disordered potential. 1994, Anais.. Alberta: Instituto de Física de São Carlos, Universidade de São Paulo, 1994. . Acesso em: 04 nov. 2025.
APA
Gusev, G. M., Gennser, U., Maude, D. K., Portal, J. C., Lubyshev, D. I., Nastaushev, Y. V., et al. (1994). Charge transfer between percolation levels in a system with an artificial , strongly disordered potential. In Program and Abstracts. Alberta: Instituto de Física de São Carlos, Universidade de São Paulo.
NLM
Gusev GM, Gennser U, Maude DK, Portal JC, Lubyshev DI, Nastaushev YV, Rossi JC, Basmaji P. Charge transfer between percolation levels in a system with an artificial , strongly disordered potential. Program and Abstracts. 1994 ;[citado 2025 nov. 04 ]
Vancouver
Gusev GM, Gennser U, Maude DK, Portal JC, Lubyshev DI, Nastaushev YV, Rossi JC, Basmaji P. Charge transfer between percolation levels in a system with an artificial , strongly disordered potential. Program and Abstracts. 1994 ;[citado 2025 nov. 04 ]
Trabalho de evento-resumo
Evidence of localized luminescence centers in porous silicon (1994)
Basmaji, Pierre; Matvienko, B; Guimarães, Francisco Eduardo Gontijo
Source: Program and Abstracts. Conference titles: International Conference on Superlattices Microstructures and Microdevices - ICSMM. Unidade: IFSC
Subjects: MATÉRIA CONDENSADA, MATÉRIA CONDENSADA, SUPERFÍCIE FÍSICA
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
BASMAJI, Pierre e MATVIENKO, B e GUIMARÃES, Francisco Eduardo Gontijo. Evidence of localized luminescence centers in porous silicon. 1994, Anais.. Alberta: Instituto de Física de São Carlos, Universidade de São Paulo, 1994. . Acesso em: 04 nov. 2025.
APA
Basmaji, P., Matvienko, B., & Guimarães, F. E. G. (1994). Evidence of localized luminescence centers in porous silicon. In Program and Abstracts. Alberta: Instituto de Física de São Carlos, Universidade de São Paulo.
NLM
Basmaji P, Matvienko B, Guimarães FEG. Evidence of localized luminescence centers in porous silicon. Program and Abstracts. 1994 ;[citado 2025 nov. 04 ]
Vancouver
Basmaji P, Matvienko B, Guimarães FEG. Evidence of localized luminescence centers in porous silicon. Program and Abstracts. 1994 ;[citado 2025 nov. 04 ]
Trabalho de evento-resumo
Photoreflectance spectroscopy on periodically 'SI' delta-doped 'GA' 'AS' (1989)
Bernussi, A A; Motisuke, P; Basmaji, Pierre; Notari, A C; Siu Li, Máximo ; Hipólito, Oscar
Source: Program and Abstracts. Conference titles: Conference on Superlattices, Quantum Wells, and Mbe Technology. Unidade: IFSC
Subjects: FOTÔNICA, ESPECTROSCOPIA
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
BERNUSSI, A A et al. Photoreflectance spectroscopy on periodically 'SI' delta-doped 'GA' 'AS'. 1989, Anais.. Brasília: Universidade de Brasilia, 1989. Disponível em: https://repositorio.usp.br/directbitstream/2b67e2ca-d6a0-4290-92d4-29e5ed853a58/PROD000354_799935.pdf. Acesso em: 04 nov. 2025.
APA
Bernussi, A. A., Motisuke, P., Basmaji, P., Notari, A. C., Siu Li, M., & Hipólito, O. (1989). Photoreflectance spectroscopy on periodically 'SI' delta-doped 'GA' 'AS'. In Program and Abstracts. Brasília: Universidade de Brasilia. Recuperado de https://repositorio.usp.br/directbitstream/2b67e2ca-d6a0-4290-92d4-29e5ed853a58/PROD000354_799935.pdf
NLM
Bernussi AA, Motisuke P, Basmaji P, Notari AC, Siu Li M, Hipólito O. Photoreflectance spectroscopy on periodically 'SI' delta-doped 'GA' 'AS' [Internet]. Program and Abstracts. 1989 ;[citado 2025 nov. 04 ] Available from: https://repositorio.usp.br/directbitstream/2b67e2ca-d6a0-4290-92d4-29e5ed853a58/PROD000354_799935.pdf
Vancouver
Bernussi AA, Motisuke P, Basmaji P, Notari AC, Siu Li M, Hipólito O. Photoreflectance spectroscopy on periodically 'SI' delta-doped 'GA' 'AS' [Internet]. Program and Abstracts. 1989 ;[citado 2025 nov. 04 ] Available from: https://repositorio.usp.br/directbitstream/2b67e2ca-d6a0-4290-92d4-29e5ed853a58/PROD000354_799935.pdf
Trabalho de evento-resumo
MBE growth and characterization of 'DELTA'-doping in 'GA''AS' and 'GA''AS' / 'SI' (1989)
Basmaji, Pierre; Ceschin, A. M.; Siu Li, Máximo ; Hipólito, Oscar; Bernussi, A. A.; Iikawa, F.; Motisuke, P.
Source: Program and Abstracts. Conference titles: Conference on Superlattices, Quantum Wells, and Mbe Technology. Unidade: IFQSC
Assunto: MATÉRIA CONDENSADA
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
BASMAJI, Pierre et al. MBE growth and characterization of 'DELTA'-doping in 'GA''AS' and 'GA''AS' / 'SI'. 1989, Anais.. Brasília: Universidade de Brasilia, 1989. . Acesso em: 04 nov. 2025.
APA
Basmaji, P., Ceschin, A. M., Siu Li, M., Hipólito, O., Bernussi, A. A., Iikawa, F., & Motisuke, P. (1989). MBE growth and characterization of 'DELTA'-doping in 'GA''AS' and 'GA''AS' / 'SI'. In Program and Abstracts. Brasília: Universidade de Brasilia.
NLM
Basmaji P, Ceschin AM, Siu Li M, Hipólito O, Bernussi AA, Iikawa F, Motisuke P. MBE growth and characterization of 'DELTA'-doping in 'GA''AS' and 'GA''AS' / 'SI'. Program and Abstracts. 1989 ;[citado 2025 nov. 04 ]
Vancouver
Basmaji P, Ceschin AM, Siu Li M, Hipólito O, Bernussi AA, Iikawa F, Motisuke P. MBE growth and characterization of 'DELTA'-doping in 'GA''AS' and 'GA''AS' / 'SI'. Program and Abstracts. 1989 ;[citado 2025 nov. 04 ]

USP Schools

ReP

Filtros

Authors