ReP USP - Resultado da busca

Artigo de periodico
X-ray absorption spectroscopy study of FePt thin films (2006)
Martins, A; Souza Neto, Narcizo M; Santos, A. D.; Prado, R J; Ramos, A Y; Fantini, Márcia Carvalho de Abreu
Source: Journal of Applied Physics. Unidade: IF
Subjects: FILMES FINOS, ESPECTROSCOPIA DE RAIO X
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ABNT
MARTINS, A et al. X-ray absorption spectroscopy study of FePt thin films. Journal of Applied Physics, v. 100, n. 1, p. 013905-1/013905-6, 2006Tradução . . Disponível em: https://doi.org/10.1063/1.2208745. Acesso em: 08 nov. 2025.
APA
Martins, A., Souza Neto, N. M., Santos, A. D., Prado, R. J., Ramos, A. Y., & Fantini, M. C. de A. (2006). X-ray absorption spectroscopy study of FePt thin films. Journal of Applied Physics, 100( 1), 013905-1/013905-6. doi:10.1063/1.2208745
NLM
Martins A, Souza Neto NM, Santos AD, Prado RJ, Ramos AY, Fantini MC de A. X-ray absorption spectroscopy study of FePt thin films [Internet]. Journal of Applied Physics. 2006 ; 100( 1): 013905-1/013905-6.[citado 2025 nov. 08 ] Available from: https://doi.org/10.1063/1.2208745
Vancouver
Martins A, Souza Neto NM, Santos AD, Prado RJ, Ramos AY, Fantini MC de A. X-ray absorption spectroscopy study of FePt thin films [Internet]. Journal of Applied Physics. 2006 ; 100( 1): 013905-1/013905-6.[citado 2025 nov. 08 ] Available from: https://doi.org/10.1063/1.2208745
Artigo de periodico
Influence of starving plasma regime on carbon content and bonds in 'a-Si ind. 1-x''C ind. x': H thin films (1998)
Pereyra, Inés ; Páez Carreño, Marcelo Nelson ; Tabacniks, Manfredo Harri ; Prado, Rogerio Junqueira; Fantini, Márcia Carvalho de Abreu
Source: Journal of Applied Physics. Unidades: EP, IF
Assunto: FÍSICA
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ABNT
PEREYRA, Inés et al. Influence of starving plasma regime on carbon content and bonds in 'a-Si ind. 1-x''C ind. x': H thin films. Journal of Applied Physics, v. 84, n. 5, p. 2371-2379, 1998Tradução . . Acesso em: 08 nov. 2025.
APA
Pereyra, I., Páez Carreño, M. N., Tabacniks, M. H., Prado, R. J., & Fantini, M. C. de A. (1998). Influence of starving plasma regime on carbon content and bonds in 'a-Si ind. 1-x''C ind. x': H thin films. Journal of Applied Physics, 84( 5), 2371-2379.
NLM
Pereyra I, Páez Carreño MN, Tabacniks MH, Prado RJ, Fantini MC de A. Influence of starving plasma regime on carbon content and bonds in 'a-Si ind. 1-x''C ind. x': H thin films. Journal of Applied Physics. 1998 ; 84( 5): 2371-2379.[citado 2025 nov. 08 ]
Vancouver
Pereyra I, Páez Carreño MN, Tabacniks MH, Prado RJ, Fantini MC de A. Influence of starving plasma regime on carbon content and bonds in 'a-Si ind. 1-x''C ind. x': H thin films. Journal of Applied Physics. 1998 ; 84( 5): 2371-2379.[citado 2025 nov. 08 ]
Artigo de periodico
On the structural properties of a-'SI IND.1-X' 'c ind.X: h' thin films (1996)
Mastelaro, Valmor Roberto ; Flank, A M; Fantini, Márcia Carvalho de Abreu ; Bittencourt, Diomar da Rocha Santos; Páez Carreño, Marcelo Nelson ; Pereyra, Inés
Source: Journal of Applied Physics. Unidades: IF, EP
Assunto: MATÉRIA CONDENSADA
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ABNT
MASTELARO, Valmor Roberto et al. On the structural properties of a-'SI IND.1-X' 'c ind.X: h' thin films. Journal of Applied Physics, v. 79, n. 3 , p. 1324-9, 1996Tradução . . Acesso em: 08 nov. 2025.
APA
Mastelaro, V. R., Flank, A. M., Fantini, M. C. de A., Bittencourt, D. da R. S., Páez Carreño, M. N., & Pereyra, I. (1996). On the structural properties of a-'SI IND.1-X' 'c ind.X: h' thin films. Journal of Applied Physics, 79( 3 ), 1324-9.
NLM
Mastelaro VR, Flank AM, Fantini MC de A, Bittencourt D da RS, Páez Carreño MN, Pereyra I. On the structural properties of a-'SI IND.1-X' 'c ind.X: h' thin films. Journal of Applied Physics. 1996 ;79( 3 ): 1324-9.[citado 2025 nov. 08 ]
Vancouver
Mastelaro VR, Flank AM, Fantini MC de A, Bittencourt D da RS, Páez Carreño MN, Pereyra I. On the structural properties of a-'SI IND.1-X' 'c ind.X: h' thin films. Journal of Applied Physics. 1996 ;79( 3 ): 1324-9.[citado 2025 nov. 08 ]
Artigo de periodico
Effect of plasma etching, carbon concentration, and buffer layer on the properties of a-'SI': h / a-'SI IND.1-X''C IND.X' : h multilayers (1994)
Velasquez, E L Z; Fantini, Márcia Carvalho de Abreu ; Páez Carreño, Marcelo Nelson ; Pereyra, Inés ; Takahashi, H; Landers, R
Source: Journal of Applied Physics. Unidades: EP, IF
Assunto: MATÉRIA CONDENSADA
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ABNT
VELASQUEZ, E L Z et al. Effect of plasma etching, carbon concentration, and buffer layer on the properties of a-'SI': h / a-'SI IND.1-X''C IND.X' : h multilayers. Journal of Applied Physics, v. 75, n. ja 1994, p. 543-8, 1994Tradução . . Acesso em: 08 nov. 2025.
APA
Velasquez, E. L. Z., Fantini, M. C. de A., Páez Carreño, M. N., Pereyra, I., Takahashi, H., & Landers, R. (1994). Effect of plasma etching, carbon concentration, and buffer layer on the properties of a-'SI': h / a-'SI IND.1-X''C IND.X' : h multilayers. Journal of Applied Physics, 75( ja 1994), 543-8.
NLM
Velasquez ELZ, Fantini MC de A, Páez Carreño MN, Pereyra I, Takahashi H, Landers R. Effect of plasma etching, carbon concentration, and buffer layer on the properties of a-'SI': h / a-'SI IND.1-X''C IND.X' : h multilayers. Journal of Applied Physics. 1994 ;75( ja 1994): 543-8.[citado 2025 nov. 08 ]
Vancouver
Velasquez ELZ, Fantini MC de A, Páez Carreño MN, Pereyra I, Takahashi H, Landers R. Effect of plasma etching, carbon concentration, and buffer layer on the properties of a-'SI': h / a-'SI IND.1-X''C IND.X' : h multilayers. Journal of Applied Physics. 1994 ;75( ja 1994): 543-8.[citado 2025 nov. 08 ]
Artigo de periodico
Microvoids in diamond-like amorphous silicon carbide (1994)
Paez Carreño, Marcelo Nelson ; Pereyra, Inés ; Fantini, Márcia Carvalho de Abreu ; Takahashi, H; Landers, R
Source: Journal of Applied Physics. Unidades: EP, IF
Assunto: MATÉRIA CONDENSADA
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ABNT
PAEZ CARREÑO, Marcelo Nelson et al. Microvoids in diamond-like amorphous silicon carbide. Journal of Applied Physics, v. 75, n. ja 1994, p. 538-42, 1994Tradução . . Disponível em: https://doi.org/10.1063/1.355835. Acesso em: 08 nov. 2025.
APA
Paez Carreño, M. N., Pereyra, I., Fantini, M. C. de A., Takahashi, H., & Landers, R. (1994). Microvoids in diamond-like amorphous silicon carbide. Journal of Applied Physics, 75( ja 1994), 538-42. doi:10.1063/1.355835
NLM
Paez Carreño MN, Pereyra I, Fantini MC de A, Takahashi H, Landers R. Microvoids in diamond-like amorphous silicon carbide [Internet]. Journal of Applied Physics. 1994 ;75( ja 1994): 538-42.[citado 2025 nov. 08 ] Available from: https://doi.org/10.1063/1.355835
Vancouver
Paez Carreño MN, Pereyra I, Fantini MC de A, Takahashi H, Landers R. Microvoids in diamond-like amorphous silicon carbide [Internet]. Journal of Applied Physics. 1994 ;75( ja 1994): 538-42.[citado 2025 nov. 08 ] Available from: https://doi.org/10.1063/1.355835
Artigo de periodico
Radio frequency sputtered electrochromic cobalt oxide coating: structural, optical and electrochemical characterization (1993)
Estrada, W; Fantini, Márcia Carvalho de Abreu ; Fonseca, C N P; Castro, S C; Gorenstein, A
Source: Journal of Applied Physics. Unidade: IF
Assunto: MATÉRIA CONDENSADA
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ABNT
ESTRADA, W et al. Radio frequency sputtered electrochromic cobalt oxide coating: structural, optical and electrochemical characterization. Journal of Applied Physics, v. 74, n. 9 , p. 5835-41, 1993Tradução . . Acesso em: 08 nov. 2025.
APA
Estrada, W., Fantini, M. C. de A., Fonseca, C. N. P., Castro, S. C., & Gorenstein, A. (1993). Radio frequency sputtered electrochromic cobalt oxide coating: structural, optical and electrochemical characterization. Journal of Applied Physics, 74( 9 ), 5835-41.
NLM
Estrada W, Fantini MC de A, Fonseca CNP, Castro SC, Gorenstein A. Radio frequency sputtered electrochromic cobalt oxide coating: structural, optical and electrochemical characterization. Journal of Applied Physics. 1993 ;74( 9 ): 5835-41.[citado 2025 nov. 08 ]
Vancouver
Estrada W, Fantini MC de A, Fonseca CNP, Castro SC, Gorenstein A. Radio frequency sputtered electrochromic cobalt oxide coating: structural, optical and electrochemical characterization. Journal of Applied Physics. 1993 ;74( 9 ): 5835-41.[citado 2025 nov. 08 ]
Artigo de periodico
Liquid junctions for characterization of electronic materials . Ii. Photoreflectance and electroreflectance of n-'SI' (1989)
Shen, W M; Fantini, Márcia Carvalho de Abreu ; Tomkiewicz, M; Gambino, J P
Source: Journal of Applied Physics. Unidade: IF
Assunto: CRISTALOGRAFIA
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ABNT
SHEN, W M et al. Liquid junctions for characterization of electronic materials . Ii. Photoreflectance and electroreflectance of n-'SI'. Journal of Applied Physics, v. 66, n. 4 , p. 1759-64, 1989Tradução . . Acesso em: 08 nov. 2025.
APA
Shen, W. M., Fantini, M. C. de A., Tomkiewicz, M., & Gambino, J. P. (1989). Liquid junctions for characterization of electronic materials . Ii. Photoreflectance and electroreflectance of n-'SI'. Journal of Applied Physics, 66( 4 ), 1759-64.
NLM
Shen WM, Fantini MC de A, Tomkiewicz M, Gambino JP. Liquid junctions for characterization of electronic materials . Ii. Photoreflectance and electroreflectance of n-'SI'. Journal of Applied Physics. 1989 ;66( 4 ): 1759-64.[citado 2025 nov. 08 ]
Vancouver
Shen WM, Fantini MC de A, Tomkiewicz M, Gambino JP. Liquid junctions for characterization of electronic materials . Ii. Photoreflectance and electroreflectance of n-'SI'. Journal of Applied Physics. 1989 ;66( 4 ): 1759-64.[citado 2025 nov. 08 ]
Artigo de periodico
Liquid junctions for characterization of electronic materials . Iv. Impendance spectroscopy of reactive ion etched 'SI' (1989)
Fantini, Márcia Carvalho de Abreu ; Shen, W M; Tomkiewicz, M; Gambino, J P
Source: Journal of Applied Physics. Unidade: IF
Assunto: SILÍCIO
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ABNT
FANTINI, Márcia Carvalho de Abreu et al. Liquid junctions for characterization of electronic materials . Iv. Impendance spectroscopy of reactive ion etched 'SI'. Journal of Applied Physics, v. 66, n. 5 , p. 2148-55, 1989Tradução . . Acesso em: 08 nov. 2025.
APA
Fantini, M. C. de A., Shen, W. M., Tomkiewicz, M., & Gambino, J. P. (1989). Liquid junctions for characterization of electronic materials . Iv. Impendance spectroscopy of reactive ion etched 'SI'. Journal of Applied Physics, 66( 5 ), 2148-55.
NLM
Fantini MC de A, Shen WM, Tomkiewicz M, Gambino JP. Liquid junctions for characterization of electronic materials . Iv. Impendance spectroscopy of reactive ion etched 'SI'. Journal of Applied Physics. 1989 ;66( 5 ): 2148-55.[citado 2025 nov. 08 ]
Vancouver
Fantini MC de A, Shen WM, Tomkiewicz M, Gambino JP. Liquid junctions for characterization of electronic materials . Iv. Impendance spectroscopy of reactive ion etched 'SI'. Journal of Applied Physics. 1989 ;66( 5 ): 2148-55.[citado 2025 nov. 08 ]
Artigo de periodico
Liquid junctions for characterization of electronic materials . Iii. Modulation spectroscopies of reactive ion etching of si (1989)
Shen, W M; Fantini, Márcia Carvalho de Abreu ; Pollak, F H; Tomkiewicz, M; Leary, H; Gambino, J P
Source: Journal of Applied Physics. Unidade: IF
Assunto: CRISTALOGRAFIA
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ABNT
SHEN, W M et al. Liquid junctions for characterization of electronic materials . Iii. Modulation spectroscopies of reactive ion etching of si. Journal of Applied Physics, v. 66, n. 4 , p. 1765-71, 1989Tradução . . Disponível em: https://doi.org/10.1063/1.344367. Acesso em: 08 nov. 2025.
APA
Shen, W. M., Fantini, M. C. de A., Pollak, F. H., Tomkiewicz, M., Leary, H., & Gambino, J. P. (1989). Liquid junctions for characterization of electronic materials . Iii. Modulation spectroscopies of reactive ion etching of si. Journal of Applied Physics, 66( 4 ), 1765-71. doi:10.1063/1.344367
NLM
Shen WM, Fantini MC de A, Pollak FH, Tomkiewicz M, Leary H, Gambino JP. Liquid junctions for characterization of electronic materials . Iii. Modulation spectroscopies of reactive ion etching of si [Internet]. Journal of Applied Physics. 1989 ;66( 4 ): 1765-71.[citado 2025 nov. 08 ] Available from: https://doi.org/10.1063/1.344367
Vancouver
Shen WM, Fantini MC de A, Pollak FH, Tomkiewicz M, Leary H, Gambino JP. Liquid junctions for characterization of electronic materials . Iii. Modulation spectroscopies of reactive ion etching of si [Internet]. Journal of Applied Physics. 1989 ;66( 4 ): 1765-71.[citado 2025 nov. 08 ] Available from: https://doi.org/10.1063/1.344367
Artigo de periodico
Liquid junctions for characterization of electronic materials . V. Comparison with solid state devices used to characterize reactive ion etching of 'SI' (1989)
Fantini, Márcia Carvalho de Abreu ; Shen, W M; Tomkiewicz, M; Gambino, J P
Source: Journal of Applied Physics. Unidade: IF
Assunto: SILÍCIO
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ABNT
FANTINI, Márcia Carvalho de Abreu et al. Liquid junctions for characterization of electronic materials . V. Comparison with solid state devices used to characterize reactive ion etching of 'SI'. Journal of Applied Physics, v. 66, n. 10, p. 4846-53, 1989Tradução . . Disponível em: https://doi.org/10.1063/1.343801. Acesso em: 08 nov. 2025.
APA
Fantini, M. C. de A., Shen, W. M., Tomkiewicz, M., & Gambino, J. P. (1989). Liquid junctions for characterization of electronic materials . V. Comparison with solid state devices used to characterize reactive ion etching of 'SI'. Journal of Applied Physics, 66( 10), 4846-53. doi:10.1063/1.343801
NLM
Fantini MC de A, Shen WM, Tomkiewicz M, Gambino JP. Liquid junctions for characterization of electronic materials . V. Comparison with solid state devices used to characterize reactive ion etching of 'SI' [Internet]. Journal of Applied Physics. 1989 ;66( 10): 4846-53.[citado 2025 nov. 08 ] Available from: https://doi.org/10.1063/1.343801
Vancouver
Fantini MC de A, Shen WM, Tomkiewicz M, Gambino JP. Liquid junctions for characterization of electronic materials . V. Comparison with solid state devices used to characterize reactive ion etching of 'SI' [Internet]. Journal of Applied Physics. 1989 ;66( 10): 4846-53.[citado 2025 nov. 08 ] Available from: https://doi.org/10.1063/1.343801
Artigo de periodico
Liquid junctions for characterization of electronic materials . I. The potential distribution at the 'SI' / method interface (1989)
Fantini, Márcia Carvalho de Abreu ; Shen, W M; Tomkiewicz, M; Gambino, J P
Source: Journal of Applied Physics. Unidade: IF
Assunto: SILÍCIO
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ABNT
FANTINI, Márcia Carvalho de Abreu et al. Liquid junctions for characterization of electronic materials . I. The potential distribution at the 'SI' / method interface. Journal of Applied Physics, v. 65, n. 12, p. 4884-90, 1989Tradução . . Disponível em: https://doi.org/10.1063/1.343203. Acesso em: 08 nov. 2025.
APA
Fantini, M. C. de A., Shen, W. M., Tomkiewicz, M., & Gambino, J. P. (1989). Liquid junctions for characterization of electronic materials . I. The potential distribution at the 'SI' / method interface. Journal of Applied Physics, 65( 12), 4884-90. doi:10.1063/1.343203
NLM
Fantini MC de A, Shen WM, Tomkiewicz M, Gambino JP. Liquid junctions for characterization of electronic materials . I. The potential distribution at the 'SI' / method interface [Internet]. Journal of Applied Physics. 1989 ;65( 12): 4884-90.[citado 2025 nov. 08 ] Available from: https://doi.org/10.1063/1.343203
Vancouver
Fantini MC de A, Shen WM, Tomkiewicz M, Gambino JP. Liquid junctions for characterization of electronic materials . I. The potential distribution at the 'SI' / method interface [Internet]. Journal of Applied Physics. 1989 ;65( 12): 4884-90.[citado 2025 nov. 08 ] Available from: https://doi.org/10.1063/1.343203

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