Liquid junctions for characterization of electronic materials . V. Comparison with solid state devices used to characterize reactive ion etching of 'SI' (1989)
- Authors:
- Autor USP: FANTINI, MARCIA CARVALHO DE ABREU - IF
- Unidade: IF
- DOI: 10.1063/1.343801
- Assunto: SILÍCIO
- Language: Inglês
- Source:
- Título: Journal of Applied Physics
- Volume/Número/Paginação/Ano: v.66, n.10, p.4846-53, 1989
- Este periódico é de acesso aberto
- Este artigo NÃO é de acesso aberto
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ABNT
FANTINI, Márcia Carvalho de Abreu et al. Liquid junctions for characterization of electronic materials . V. Comparison with solid state devices used to characterize reactive ion etching of 'SI'. Journal of Applied Physics, v. 66, n. 10, p. 4846-53, 1989Tradução . . Disponível em: https://doi.org/10.1063/1.343801. Acesso em: 20 jan. 2026. -
APA
Fantini, M. C. de A., Shen, W. M., Tomkiewicz, M., & Gambino, J. P. (1989). Liquid junctions for characterization of electronic materials . V. Comparison with solid state devices used to characterize reactive ion etching of 'SI'. Journal of Applied Physics, 66( 10), 4846-53. doi:10.1063/1.343801 -
NLM
Fantini MC de A, Shen WM, Tomkiewicz M, Gambino JP. Liquid junctions for characterization of electronic materials . V. Comparison with solid state devices used to characterize reactive ion etching of 'SI' [Internet]. Journal of Applied Physics. 1989 ;66( 10): 4846-53.[citado 2026 jan. 20 ] Available from: https://doi.org/10.1063/1.343801 -
Vancouver
Fantini MC de A, Shen WM, Tomkiewicz M, Gambino JP. Liquid junctions for characterization of electronic materials . V. Comparison with solid state devices used to characterize reactive ion etching of 'SI' [Internet]. Journal of Applied Physics. 1989 ;66( 10): 4846-53.[citado 2026 jan. 20 ] Available from: https://doi.org/10.1063/1.343801 - Relation between distortions in the oxygen sublattice and the local order of 'ZR' in nanostructured 'ZR''O IND. 2'–'CE''O IND. 2' mixed oxides
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Informações sobre o DOI: 10.1063/1.343801 (Fonte: oaDOI API)
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