Liquid junctions for characterization of electronic materials . V. Comparison with solid state devices used to characterize reactive ion etching of 'SI'

Liquid junctions for characterization of electronic materials . V. Comparison with solid state devices used to characterize reactive ion etching of 'SI' (1989)

Authors:
USP affiliated author: FANTINI, MARCIA CARVALHO DE ABREU - IF
School: IF
DOI: 10.1063/1.343801
Subject: SILÍCIO
Language: Inglês
Source:
- Título do periódico: Journal of Applied Physics
- Volume/Número/Paginação/Ano: v.66, n.10, p.4846-53, 1989

Informações sobre o DOI: 10.1063/1.343801 (Fonte: oaDOI API)

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ABNT

FANTINI, Márcia Carvalho de Abreu et al. Liquid junctions for characterization of electronic materials . V. Comparison with solid state devices used to characterize reactive ion etching of 'SI'. Journal of Applied Physics, v. 66, n. 10, p. 4846-53, 1989Tradução . . Acesso em: 28 jun. 2022.
APA

Fantini, M. C. de A., Shen, W. M., Tomkiewicz, M., & Gambino, J. P. (1989). Liquid junctions for characterization of electronic materials . V. Comparison with solid state devices used to characterize reactive ion etching of 'SI'. Journal of Applied Physics, 66( 10), 4846-53. doi:10.1063/1.343801
NLM

Fantini MC de A, Shen WM, Tomkiewicz M, Gambino JP. Liquid junctions for characterization of electronic materials . V. Comparison with solid state devices used to characterize reactive ion etching of 'SI'. Journal of Applied Physics. 1989 ;66( 10): 4846-53.[citado 2022 jun. 28 ]
Vancouver

Fantini MC de A, Shen WM, Tomkiewicz M, Gambino JP. Liquid junctions for characterization of electronic materials . V. Comparison with solid state devices used to characterize reactive ion etching of 'SI'. Journal of Applied Physics. 1989 ;66( 10): 4846-53.[citado 2022 jun. 28 ]