Liquid junctions for characterization of electronic materials . V. Comparison with solid state devices used to characterize reactive ion etching of 'SI'

Liquid junctions for characterization of electronic materials . V. Comparison with solid state devices used to characterize reactive ion etching of 'SI' (1989)

Authors:
USP affiliated authors: FANTINI, MARCIA CARVALHO DE ABREU - IF
Unidades: IF
DOI: 10.1063/1.343801
Subjects: SILÍCIO
Language: Inglês
Source:
- Título do periódico: Journal of Applied Physics
- Volume/Número/Paginação/Ano: v.66, n.10, p.4846-53, 1989

Informações sobre o DOI: 10.1063/1.343801 (Fonte: oaDOI API)

A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas

ABNT

FANTINI, Márcia Carvalho de Abreu; SHEN, W M; TOMKIEWICZ, M; GAMBINO, J P. Liquid junctions for characterization of electronic materials . V. Comparison with solid state devices used to characterize reactive ion etching of 'SI'. Journal of Applied Physics[S.l.], v. 66, n. 10, p. 4846-53, 1989. DOI: 10.1063/1.343801.
APA

Fantini, M. C. de A., Shen, W. M., Tomkiewicz, M., & Gambino, J. P. (1989). Liquid junctions for characterization of electronic materials . V. Comparison with solid state devices used to characterize reactive ion etching of 'SI'. Journal of Applied Physics, 66( 10), 4846-53. doi:10.1063/1.343801
NLM

Fantini MC de A, Shen WM, Tomkiewicz M, Gambino JP. Liquid junctions for characterization of electronic materials . V. Comparison with solid state devices used to characterize reactive ion etching of 'SI'. Journal of Applied Physics. 1989 ;66( 10): 4846-53.
Vancouver

Fantini MC de A, Shen WM, Tomkiewicz M, Gambino JP. Liquid junctions for characterization of electronic materials . V. Comparison with solid state devices used to characterize reactive ion etching of 'SI'. Journal of Applied Physics. 1989 ;66( 10): 4846-53.