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Artigo de periodico
Driven electron g-factor anisotropy in layered III–V semiconductors: interfacing, tunnel coupling, and structure inversion asymmetry effects (2024)
Sandoval, Marcelo Alejandro Toloza ; Padilla, Jhon Elber Leon ; Wanderley, Adilson Barros ; Sipahi, Guilherme Matos ; Chubaci, José Fernando Diniz ; Silva, Antonio Ferreira da
Source: Journal of Applied Physics. Unidades: IFSC, IF
Subjects: APRENDIZADO COMPUTACIONAL, SEMICONDUTORES
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ABNT
SANDOVAL, Marcelo Alejandro Toloza et al. Driven electron g-factor anisotropy in layered III–V semiconductors: interfacing, tunnel coupling, and structure inversion asymmetry effects. Journal of Applied Physics, v. 135, n. 10, p. 103901-1-103901-9, 2024Tradução . . Disponível em: https://doi.org/10.1063/5.0187962. Acesso em: 08 nov. 2025.
APA
Sandoval, M. A. T., Padilla, J. E. L., Wanderley, A. B., Sipahi, G. M., Chubaci, J. F. D., & Silva, A. F. da. (2024). Driven electron g-factor anisotropy in layered III–V semiconductors: interfacing, tunnel coupling, and structure inversion asymmetry effects. Journal of Applied Physics, 135( 10), 103901-1-103901-9. doi:10.1063/5.0187962
NLM
Sandoval MAT, Padilla JEL, Wanderley AB, Sipahi GM, Chubaci JFD, Silva AF da. Driven electron g-factor anisotropy in layered III–V semiconductors: interfacing, tunnel coupling, and structure inversion asymmetry effects [Internet]. Journal of Applied Physics. 2024 ; 135( 10): 103901-1-103901-9.[citado 2025 nov. 08 ] Available from: https://doi.org/10.1063/5.0187962
Vancouver
Sandoval MAT, Padilla JEL, Wanderley AB, Sipahi GM, Chubaci JFD, Silva AF da. Driven electron g-factor anisotropy in layered III–V semiconductors: interfacing, tunnel coupling, and structure inversion asymmetry effects [Internet]. Journal of Applied Physics. 2024 ; 135( 10): 103901-1-103901-9.[citado 2025 nov. 08 ] Available from: https://doi.org/10.1063/5.0187962
Artigo de periodico
Broadband downconversion in Eu2+,3+/Yb3+ doped calcium aluminosilicate glasses for solar cells applications (2023)
Santos, Jéssica Fabiana Mariano dos ; Muniz, Robson Ferrari ; Savi, Elton de Lima ; Silva Junior, Adriano Aparecido da ; Schiavon, Gilson Junior ; Medina Neto, Antonio ; Rohling, Jurandir Hillmann ; Baesso, Mauro Luciano ; Lima, Sandro Marcio ; Andrade, Luís Humberto da Cunha ; Catunda, Tomaz ; Nunes, Luiz Antônio de Oliveira
Source: Journal of Applied Physics. Unidade: IFSC
Subjects: ESPECTROSCOPIA, VIDRO, LUMINESCÊNCIA, EURÓPIO, ITÉRBIO
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ABNT
SANTOS, Jéssica Fabiana Mariano dos et al. Broadband downconversion in Eu2+,3+/Yb3+ doped calcium aluminosilicate glasses for solar cells applications. Journal of Applied Physics, v. 133, n. Ja 2023, p. 033102-1-033102-9, 2023Tradução . . Disponível em: https://doi.org/10.1063/5.0131686. Acesso em: 08 nov. 2025.
APA
Santos, J. F. M. dos, Muniz, R. F., Savi, E. de L., Silva Junior, A. A. da, Schiavon, G. J., Medina Neto, A., et al. (2023). Broadband downconversion in Eu2+,3+/Yb3+ doped calcium aluminosilicate glasses for solar cells applications. Journal of Applied Physics, 133( Ja 2023), 033102-1-033102-9. doi:10.1063/5.0131686
NLM
Santos JFM dos, Muniz RF, Savi E de L, Silva Junior AA da, Schiavon GJ, Medina Neto A, Rohling JH, Baesso ML, Lima SM, Andrade LH da C, Catunda T, Nunes LA de O. Broadband downconversion in Eu2+,3+/Yb3+ doped calcium aluminosilicate glasses for solar cells applications [Internet]. Journal of Applied Physics. 2023 ; 133( Ja 2023): 033102-1-033102-9.[citado 2025 nov. 08 ] Available from: https://doi.org/10.1063/5.0131686
Vancouver
Santos JFM dos, Muniz RF, Savi E de L, Silva Junior AA da, Schiavon GJ, Medina Neto A, Rohling JH, Baesso ML, Lima SM, Andrade LH da C, Catunda T, Nunes LA de O. Broadband downconversion in Eu2+,3+/Yb3+ doped calcium aluminosilicate glasses for solar cells applications [Internet]. Journal of Applied Physics. 2023 ; 133( Ja 2023): 033102-1-033102-9.[citado 2025 nov. 08 ] Available from: https://doi.org/10.1063/5.0131686
Artigo de periodico
Photoacoustic and photothermal and the photovoltaic efficiency of solar cells: a tutorial (2022)
Bento, A. C. ; Cella, N. ; Lima, S. M. ; Nunes, Luiz Antônio de Oliveira ; Andrade, L. H. C. ; Silva, J. R. ; Zanuto, V. S. ; Astrath, N. G. C. ; Catunda, Tomaz ; Medina, A. N. ; Rohling, J. H. ; Muniz, R. F. ; Berrar, J. W. ; Malacarne, L. C. ; Weinand, W. R. ; Sato, F. ; Belancon, M. P. ; Schiavon, G. J. ; Shen, J. ; Miranda, L. C. M.; Vargas, H.; Baesso, Mauro Luciano
Source: Journal of Applied Physics. Unidade: IFSC
Subjects: CERÂMICA, NANOPARTÍCULAS, LUMINESCÊNCIA, CÉLULAS SOLARES, FILMES FINOS, ÓPTICA NÃO LINEAR
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ABNT
BENTO, A. C. et al. Photoacoustic and photothermal and the photovoltaic efficiency of solar cells: a tutorial. Journal of Applied Physics, v. 131, n. 14, p. 141101-1-141101-18, 2022Tradução . . Disponível em: https://doi.org/10.1063/5.0088211. Acesso em: 08 nov. 2025.
APA
Bento, A. C., Cella, N., Lima, S. M., Nunes, L. A. de O., Andrade, L. H. C., Silva, J. R., et al. (2022). Photoacoustic and photothermal and the photovoltaic efficiency of solar cells: a tutorial. Journal of Applied Physics, 131( 14), 141101-1-141101-18. doi:10.1063/5.0088211
NLM
Bento AC, Cella N, Lima SM, Nunes LA de O, Andrade LHC, Silva JR, Zanuto VS, Astrath NGC, Catunda T, Medina AN, Rohling JH, Muniz RF, Berrar JW, Malacarne LC, Weinand WR, Sato F, Belancon MP, Schiavon GJ, Shen J, Miranda LCM, Vargas H, Baesso ML. Photoacoustic and photothermal and the photovoltaic efficiency of solar cells: a tutorial [Internet]. Journal of Applied Physics. 2022 ; 131( 14): 141101-1-141101-18.[citado 2025 nov. 08 ] Available from: https://doi.org/10.1063/5.0088211
Vancouver
Bento AC, Cella N, Lima SM, Nunes LA de O, Andrade LHC, Silva JR, Zanuto VS, Astrath NGC, Catunda T, Medina AN, Rohling JH, Muniz RF, Berrar JW, Malacarne LC, Weinand WR, Sato F, Belancon MP, Schiavon GJ, Shen J, Miranda LCM, Vargas H, Baesso ML. Photoacoustic and photothermal and the photovoltaic efficiency of solar cells: a tutorial [Internet]. Journal of Applied Physics. 2022 ; 131( 14): 141101-1-141101-18.[citado 2025 nov. 08 ] Available from: https://doi.org/10.1063/5.0088211
Artigo de periodico
Thin-film of Nd3+-Yb3+ co-doped low silica calcium aluminosilicate glass grown by a laser deposition technique (2022)
Savi, Elton de Lima ; Muniz, Robson F. ; Silva Junior, Adriano Aparecido da ; Schiavon, Gilson Junior ; Berrar, Jhonatan ; Estrada, Flávia Regina ; Schio, Pedro ; Cezar, Julio Criginski ; Rohling, Jurandir Hillmann ; Zanuto, Vitor S. ; Bento, A. C. ; Medina, Antonio ; Nunes, Luiz Antônio de Oliveira ; Baesso, Mauro Luciano
Source: Journal of Applied Physics. Unidade: IFSC
Subjects: CERÂMICA, CÉLULAS SOLARES, FILMES FINOS, ÓPTICA NÃO LINEAR
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ABNT
SAVI, Elton de Lima et al. Thin-film of Nd3+-Yb3+ co-doped low silica calcium aluminosilicate glass grown by a laser deposition technique. Journal of Applied Physics, v. 131, n. 5, p. 055304-1-055304-8, 2022Tradução . . Disponível em: https://doi.org/10.1063/5.0067794. Acesso em: 08 nov. 2025.
APA
Savi, E. de L., Muniz, R. F., Silva Junior, A. A. da, Schiavon, G. J., Berrar, J., Estrada, F. R., et al. (2022). Thin-film of Nd3+-Yb3+ co-doped low silica calcium aluminosilicate glass grown by a laser deposition technique. Journal of Applied Physics, 131( 5), 055304-1-055304-8. doi:10.1063/5.0067794
NLM
Savi E de L, Muniz RF, Silva Junior AA da, Schiavon GJ, Berrar J, Estrada FR, Schio P, Cezar JC, Rohling JH, Zanuto VS, Bento AC, Medina A, Nunes LA de O, Baesso ML. Thin-film of Nd3+-Yb3+ co-doped low silica calcium aluminosilicate glass grown by a laser deposition technique [Internet]. Journal of Applied Physics. 2022 ; 131( 5): 055304-1-055304-8.[citado 2025 nov. 08 ] Available from: https://doi.org/10.1063/5.0067794
Vancouver
Savi E de L, Muniz RF, Silva Junior AA da, Schiavon GJ, Berrar J, Estrada FR, Schio P, Cezar JC, Rohling JH, Zanuto VS, Bento AC, Medina A, Nunes LA de O, Baesso ML. Thin-film of Nd3+-Yb3+ co-doped low silica calcium aluminosilicate glass grown by a laser deposition technique [Internet]. Journal of Applied Physics. 2022 ; 131( 5): 055304-1-055304-8.[citado 2025 nov. 08 ] Available from: https://doi.org/10.1063/5.0067794
Artigo de periodico
Photothermal and spectroscopic characterization of Tb3+-doped tungsten-zirconium-tellurite glasses (2020)
Santos, Jéssica Fabiana Mariano dos ; Zanuto, Vitor Santaella ; Kesavulu, C. R. ; Venkataia, G ; Jayasankar, C. K. ; Nunes, Luiz Antônio de Oliveira ; Catunda, Tomaz
Source: Journal of Applied Physics. Unidade: IFSC
Subjects: CERÂMICA, ÓPTICA NÃO LINEAR, FERROELETRICIDADE
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ABNT
SANTOS, Jéssica Fabiana Mariano dos et al. Photothermal and spectroscopic characterization of Tb3+-doped tungsten-zirconium-tellurite glasses. Journal of Applied Physics, v. 128, n. 11, p. 113103-1-113103-8, 2020Tradução . . Disponível em: https://doi.org/10.1063/5.0020655. Acesso em: 08 nov. 2025.
APA
Santos, J. F. M. dos, Zanuto, V. S., Kesavulu, C. R., Venkataia, G., Jayasankar, C. K., Nunes, L. A. de O., & Catunda, T. (2020). Photothermal and spectroscopic characterization of Tb3+-doped tungsten-zirconium-tellurite glasses. Journal of Applied Physics, 128( 11), 113103-1-113103-8. doi:10.1063/5.0020655
NLM
Santos JFM dos, Zanuto VS, Kesavulu CR, Venkataia G, Jayasankar CK, Nunes LA de O, Catunda T. Photothermal and spectroscopic characterization of Tb3+-doped tungsten-zirconium-tellurite glasses [Internet]. Journal of Applied Physics. 2020 ; 128( 11): 113103-1-113103-8.[citado 2025 nov. 08 ] Available from: https://doi.org/10.1063/5.0020655
Vancouver
Santos JFM dos, Zanuto VS, Kesavulu CR, Venkataia G, Jayasankar CK, Nunes LA de O, Catunda T. Photothermal and spectroscopic characterization of Tb3+-doped tungsten-zirconium-tellurite glasses [Internet]. Journal of Applied Physics. 2020 ; 128( 11): 113103-1-113103-8.[citado 2025 nov. 08 ] Available from: https://doi.org/10.1063/5.0020655
Artigo de periodico
Influence of nonradiative Auger process in the lanthanide complexes lifetime near interfaces in organic light-emitting diode structures (2019)
Pereira, Alessandra; Conte, Gilmar; Faceto, Angelo Danilo; Nunes, Luiz Antônio de Oliveira ; Quirino, Welber G.; Legnani, Cristiano; Gallardo, Hugo; Cremona, Marco; Bechtold, Ivan H.; Guimarães, Francisco Eduardo Gontijo
Source: Journal of Applied Physics. Unidade: IFSC
Subjects: LUMINESCÊNCIA, EMISSÃO DA LUZ, FILMES FINOS, ÓPTICA NÃO LINEAR
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ABNT
PEREIRA, Alessandra et al. Influence of nonradiative Auger process in the lanthanide complexes lifetime near interfaces in organic light-emitting diode structures. Journal of Applied Physics, v. 126, n. 16, p. 165501-1-165501-9, 2019Tradução . . Disponível em: https://doi.org/10.1063/1.5099014. Acesso em: 08 nov. 2025.
APA
Pereira, A., Conte, G., Faceto, A. D., Nunes, L. A. de O., Quirino, W. G., Legnani, C., et al. (2019). Influence of nonradiative Auger process in the lanthanide complexes lifetime near interfaces in organic light-emitting diode structures. Journal of Applied Physics, 126( 16), 165501-1-165501-9. doi:10.1063/1.5099014
NLM
Pereira A, Conte G, Faceto AD, Nunes LA de O, Quirino WG, Legnani C, Gallardo H, Cremona M, Bechtold IH, Guimarães FEG. Influence of nonradiative Auger process in the lanthanide complexes lifetime near interfaces in organic light-emitting diode structures [Internet]. Journal of Applied Physics. 2019 ; 126( 16): 165501-1-165501-9.[citado 2025 nov. 08 ] Available from: https://doi.org/10.1063/1.5099014
Vancouver
Pereira A, Conte G, Faceto AD, Nunes LA de O, Quirino WG, Legnani C, Gallardo H, Cremona M, Bechtold IH, Guimarães FEG. Influence of nonradiative Auger process in the lanthanide complexes lifetime near interfaces in organic light-emitting diode structures [Internet]. Journal of Applied Physics. 2019 ; 126( 16): 165501-1-165501-9.[citado 2025 nov. 08 ] Available from: https://doi.org/10.1063/1.5099014
Artigo de periodico
A comprehensive study of g-factors, elastic, structural and electronic properties of III-V semiconductors using hybrid-density functional theory (2018)
Bastos, Carlos M. O.; Sabino, Fernando P.; Sipahi, Guilherme Matos ; Silva, Juarez Lopes Ferreira da
Source: Journal of Applied Physics. Unidades: IFSC, IQSC
Subjects: SEMICONDUTORES, MAGNETISMO, DISPOSITIVOS ELETRÔNICOS
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ABNT
BASTOS, Carlos M. O. et al. A comprehensive study of g-factors, elastic, structural and electronic properties of III-V semiconductors using hybrid-density functional theory. Journal of Applied Physics, v. 123, n. 6, p. 065702-1-065702-13, 2018Tradução . . Disponível em: https://doi.org/10.1063/1.5018325. Acesso em: 08 nov. 2025.
APA
Bastos, C. M. O., Sabino, F. P., Sipahi, G. M., & Silva, J. L. F. da. (2018). A comprehensive study of g-factors, elastic, structural and electronic properties of III-V semiconductors using hybrid-density functional theory. Journal of Applied Physics, 123( 6), 065702-1-065702-13. doi:10.1063/1.5018325
NLM
Bastos CMO, Sabino FP, Sipahi GM, Silva JLF da. A comprehensive study of g-factors, elastic, structural and electronic properties of III-V semiconductors using hybrid-density functional theory [Internet]. Journal of Applied Physics. 2018 ; 123( 6): 065702-1-065702-13.[citado 2025 nov. 08 ] Available from: https://doi.org/10.1063/1.5018325
Vancouver
Bastos CMO, Sabino FP, Sipahi GM, Silva JLF da. A comprehensive study of g-factors, elastic, structural and electronic properties of III-V semiconductors using hybrid-density functional theory [Internet]. Journal of Applied Physics. 2018 ; 123( 6): 065702-1-065702-13.[citado 2025 nov. 08 ] Available from: https://doi.org/10.1063/1.5018325
Artigo de periodico
Tuning the optical bandgap in multi-cation compound transparent conducting-oxides: the examples of In2ZnO4 and In4Sn3O12 (2018)
Sabino, Fernando P.; Oliveira, Luiz Nunes de ; Wei, Su-Huai; Silva, Juarez Lopes Ferreira da
Source: Journal of Applied Physics. Unidades: IFSC, IQSC
Subjects: ÓPTICA, FÍSICA TEÓRICA
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ABNT
SABINO, Fernando P. et al. Tuning the optical bandgap in multi-cation compound transparent conducting-oxides: the examples of In2ZnO4 and In4Sn3O12. Journal of Applied Physics, v. 123, n. 5, p. 055704-1-055704-9, 2018Tradução . . Disponível em: https://doi.org/10.1063/1.5018056. Acesso em: 08 nov. 2025.
APA
Sabino, F. P., Oliveira, L. N. de, Wei, S. -H., & Silva, J. L. F. da. (2018). Tuning the optical bandgap in multi-cation compound transparent conducting-oxides: the examples of In2ZnO4 and In4Sn3O12. Journal of Applied Physics, 123( 5), 055704-1-055704-9. doi:10.1063/1.5018056
NLM
Sabino FP, Oliveira LN de, Wei S-H, Silva JLF da. Tuning the optical bandgap in multi-cation compound transparent conducting-oxides: the examples of In2ZnO4 and In4Sn3O12 [Internet]. Journal of Applied Physics. 2018 ; 123( 5): 055704-1-055704-9.[citado 2025 nov. 08 ] Available from: https://doi.org/10.1063/1.5018056
Vancouver
Sabino FP, Oliveira LN de, Wei S-H, Silva JLF da. Tuning the optical bandgap in multi-cation compound transparent conducting-oxides: the examples of In2ZnO4 and In4Sn3O12 [Internet]. Journal of Applied Physics. 2018 ; 123( 5): 055704-1-055704-9.[citado 2025 nov. 08 ] Available from: https://doi.org/10.1063/1.5018056
Artigo de periodico
An alternative experimental approach to produce rare-earth-doped SiOx films (2016)
Zanatta, Antonio Ricardo
Source: Journal of Applied Physics. Unidade: IFSC
Subjects: MATERIAIS NANOESTRUTURADOS, MATÉRIA CONDENSADA
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ABNT
ZANATTA, Antonio Ricardo. An alternative experimental approach to produce rare-earth-doped SiOx films. Journal of Applied Physics, v. 119, n. 14, p. 145302-1-145302-5, 2016Tradução . . Disponível em: https://doi.org/10.1063/1.4945677. Acesso em: 08 nov. 2025.
APA
Zanatta, A. R. (2016). An alternative experimental approach to produce rare-earth-doped SiOx films. Journal of Applied Physics, 119( 14), 145302-1-145302-5. doi:10.1063/1.4945677
NLM
Zanatta AR. An alternative experimental approach to produce rare-earth-doped SiOx films [Internet]. Journal of Applied Physics. 2016 ; 119( 14): 145302-1-145302-5.[citado 2025 nov. 08 ] Available from: https://doi.org/10.1063/1.4945677
Vancouver
Zanatta AR. An alternative experimental approach to produce rare-earth-doped SiOx films [Internet]. Journal of Applied Physics. 2016 ; 119( 14): 145302-1-145302-5.[citado 2025 nov. 08 ] Available from: https://doi.org/10.1063/1.4945677
Artigo de periodico
Mechanisms of optical losses in the 5D4 and 5D3 levels in Tb3+ doped low silica calcium aluminosilicate glasses (2015)
Santos, J. F. M.; Terra, I. A. A.; Astrath, N. G. C.; Guimarães, F. B.; Baesso, M. L.; Nunes, Luiz Antônio de Oliveira ; Catunda, Tomaz
Source: Journal of Applied Physics. Unidade: IFSC
Subjects: FOTOLUMINESCÊNCIA, ENERGIA, ALUMÍNIO
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ABNT
SANTOS, J. F. M. et al. Mechanisms of optical losses in the 5D4 and 5D3 levels in Tb3+ doped low silica calcium aluminosilicate glasses. Journal of Applied Physics, v. 117, n. 5, p. 053102-1-053102-8, 2015Tradução . . Disponível em: https://doi.org/10.1063/1.4906781. Acesso em: 08 nov. 2025.
APA
Santos, J. F. M., Terra, I. A. A., Astrath, N. G. C., Guimarães, F. B., Baesso, M. L., Nunes, L. A. de O., & Catunda, T. (2015). Mechanisms of optical losses in the 5D4 and 5D3 levels in Tb3+ doped low silica calcium aluminosilicate glasses. Journal of Applied Physics, 117( 5), 053102-1-053102-8. doi:10.1063/1.4906781
NLM
Santos JFM, Terra IAA, Astrath NGC, Guimarães FB, Baesso ML, Nunes LA de O, Catunda T. Mechanisms of optical losses in the 5D4 and 5D3 levels in Tb3+ doped low silica calcium aluminosilicate glasses [Internet]. Journal of Applied Physics. 2015 ; 117( 5): 053102-1-053102-8.[citado 2025 nov. 08 ] Available from: https://doi.org/10.1063/1.4906781
Vancouver
Santos JFM, Terra IAA, Astrath NGC, Guimarães FB, Baesso ML, Nunes LA de O, Catunda T. Mechanisms of optical losses in the 5D4 and 5D3 levels in Tb3+ doped low silica calcium aluminosilicate glasses [Internet]. Journal of Applied Physics. 2015 ; 117( 5): 053102-1-053102-8.[citado 2025 nov. 08 ] Available from: https://doi.org/10.1063/1.4906781
Artigo de periodico
Photoluminescence and compositional-structural properties of ion-beam sputter deposited Er-doped TiO2-xNx films: their potential as a temperature sensor (2015)
Scoca, D.; Morales, M.; Merlo, R.; Alvarez, F.; Zanatta, Antonio Ricardo
Source: Journal of Applied Physics. Unidade: IFSC
Subjects: FOTOLUMINESCÊNCIA, FILMES FINOS
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ABNT
SCOCA, D. et al. Photoluminescence and compositional-structural properties of ion-beam sputter deposited Er-doped TiO2-xNx films: their potential as a temperature sensor. Journal of Applied Physics, v. 117, n. 20, p. 205304-1-205304-6, 2015Tradução . . Disponível em: https://doi.org/10.1063/1.4921809. Acesso em: 08 nov. 2025.
APA
Scoca, D., Morales, M., Merlo, R., Alvarez, F., & Zanatta, A. R. (2015). Photoluminescence and compositional-structural properties of ion-beam sputter deposited Er-doped TiO2-xNx films: their potential as a temperature sensor. Journal of Applied Physics, 117( 20), 205304-1-205304-6. doi:10.1063/1.4921809
NLM
Scoca D, Morales M, Merlo R, Alvarez F, Zanatta AR. Photoluminescence and compositional-structural properties of ion-beam sputter deposited Er-doped TiO2-xNx films: their potential as a temperature sensor [Internet]. Journal of Applied Physics. 2015 ; 117( 20): 205304-1-205304-6.[citado 2025 nov. 08 ] Available from: https://doi.org/10.1063/1.4921809
Vancouver
Scoca D, Morales M, Merlo R, Alvarez F, Zanatta AR. Photoluminescence and compositional-structural properties of ion-beam sputter deposited Er-doped TiO2-xNx films: their potential as a temperature sensor [Internet]. Journal of Applied Physics. 2015 ; 117( 20): 205304-1-205304-6.[citado 2025 nov. 08 ] Available from: https://doi.org/10.1063/1.4921809
Artigo de periodico
On the structural-optical properties of Al-containing amorphous Si thin films and the metal-induced crystallization phenomenon (2014)
Zanatta, Antonio Ricardo ; Kordesch, M. E.
Source: Journal of Applied Physics. Unidade: IFSC
Subjects: SILÍCIO, ALUMÍNIO, FILMES FINOS (COMPOSIÇÃO;ESTRUTURA;PROPRIEDADES)
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ABNT
ZANATTA, Antonio Ricardo e KORDESCH, M. E. On the structural-optical properties of Al-containing amorphous Si thin films and the metal-induced crystallization phenomenon. Journal of Applied Physics, v. 116, n. 7, p. 073511-1-073511-7, 2014Tradução . . Disponível em: https://doi.org/10.1063/1.4893654. Acesso em: 08 nov. 2025.
APA
Zanatta, A. R., & Kordesch, M. E. (2014). On the structural-optical properties of Al-containing amorphous Si thin films and the metal-induced crystallization phenomenon. Journal of Applied Physics, 116( 7), 073511-1-073511-7. doi:10.1063/1.4893654
NLM
Zanatta AR, Kordesch ME. On the structural-optical properties of Al-containing amorphous Si thin films and the metal-induced crystallization phenomenon [Internet]. Journal of Applied Physics. 2014 ; 116( 7): 073511-1-073511-7.[citado 2025 nov. 08 ] Available from: https://doi.org/10.1063/1.4893654
Vancouver
Zanatta AR, Kordesch ME. On the structural-optical properties of Al-containing amorphous Si thin films and the metal-induced crystallization phenomenon [Internet]. Journal of Applied Physics. 2014 ; 116( 7): 073511-1-073511-7.[citado 2025 nov. 08 ] Available from: https://doi.org/10.1063/1.4893654
Artigo de periodico
Interband polarized absorption in InP polytypic superlattices (2014)
Faria Junior, P. E.; Campos, T.; Sipahi, Guilherme Matos
Source: Journal of Applied Physics. Unidade: IFSC
Subjects: POLARIZAÇÃO, ABSORÇÃO DA LUZ, FÍSICA COMPUTACIONAL
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ABNT
FARIA JUNIOR, P. E. e CAMPOS, T. e SIPAHI, Guilherme Matos. Interband polarized absorption in InP polytypic superlattices. Journal of Applied Physics, v. 116, n. 19, p. 193501-1-193501-8, 2014Tradução . . Disponível em: https://doi.org/10.1063/1.4901209. Acesso em: 08 nov. 2025.
APA
Faria Junior, P. E., Campos, T., & Sipahi, G. M. (2014). Interband polarized absorption in InP polytypic superlattices. Journal of Applied Physics, 116( 19), 193501-1-193501-8. doi:10.1063/1.4901209
NLM
Faria Junior PE, Campos T, Sipahi GM. Interband polarized absorption in InP polytypic superlattices [Internet]. Journal of Applied Physics. 2014 ; 116( 19): 193501-1-193501-8.[citado 2025 nov. 08 ] Available from: https://doi.org/10.1063/1.4901209
Vancouver
Faria Junior PE, Campos T, Sipahi GM. Interband polarized absorption in InP polytypic superlattices [Internet]. Journal of Applied Physics. 2014 ; 116( 19): 193501-1-193501-8.[citado 2025 nov. 08 ] Available from: https://doi.org/10.1063/1.4901209
Artigo de periodico
Influence of Ni concentration on the crystallization of amorphous Si films and on the development of different Ni-silicide phases (2014)
Zanatta, Antonio Ricardo ; Ingram, D. C.; Kordesch, M. E.
Source: Journal of Applied Physics. Unidade: IFSC
Subjects: NÍQUEL, SEMICONDUTORES, DIFRAÇÃO POR RAIOS X, CRISTALIZAÇÃO, FILMES FINOS (COMPOSIÇÃO;ESTRUTURA;PROPRIEDADES)
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ABNT
ZANATTA, Antonio Ricardo e INGRAM, D. C. e KORDESCH, M. E. Influence of Ni concentration on the crystallization of amorphous Si films and on the development of different Ni-silicide phases. Journal of Applied Physics, v. 116, n. 12, p. 123508-1-123508-6, 2014Tradução . . Disponível em: https://doi.org/10.1063/1.4896589. Acesso em: 08 nov. 2025.
APA
Zanatta, A. R., Ingram, D. C., & Kordesch, M. E. (2014). Influence of Ni concentration on the crystallization of amorphous Si films and on the development of different Ni-silicide phases. Journal of Applied Physics, 116( 12), 123508-1-123508-6. doi:10.1063/1.4896589
NLM
Zanatta AR, Ingram DC, Kordesch ME. Influence of Ni concentration on the crystallization of amorphous Si films and on the development of different Ni-silicide phases [Internet]. Journal of Applied Physics. 2014 ; 116( 12): 123508-1-123508-6.[citado 2025 nov. 08 ] Available from: https://doi.org/10.1063/1.4896589
Vancouver
Zanatta AR, Ingram DC, Kordesch ME. Influence of Ni concentration on the crystallization of amorphous Si films and on the development of different Ni-silicide phases [Internet]. Journal of Applied Physics. 2014 ; 116( 12): 123508-1-123508-6.[citado 2025 nov. 08 ] Available from: https://doi.org/10.1063/1.4896589

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