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Artigo de periodico
Photoinduced photoluminescence intensity enhancement in poly(p-phenylene vinylene) films (2002)
Gobato, Yara Galvao; Marletta, Alexandre; Faria, Roberto Mendonça ; Guimarães, Francisco Eduardo Gontijo ; Souza, J M; Pereira, E C
Source: Applied Physics Letters. Unidade: IFSC
Subjects: FÍSICA DA MATÉRIA CONDENSADA, FOTOLUMINESCÊNCIA
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ABNT
GOBATO, Yara Galvao et al. Photoinduced photoluminescence intensity enhancement in poly(p-phenylene vinylene) films. Applied Physics Letters, v. 81, n. 5, p. 942-944, 2002Tradução . . Disponível em: https://doi.org/10.1063/1.1497198. Acesso em: 04 nov. 2025.
APA
Gobato, Y. G., Marletta, A., Faria, R. M., Guimarães, F. E. G., Souza, J. M., & Pereira, E. C. (2002). Photoinduced photoluminescence intensity enhancement in poly(p-phenylene vinylene) films. Applied Physics Letters, 81( 5), 942-944. doi:10.1063/1.1497198
NLM
Gobato YG, Marletta A, Faria RM, Guimarães FEG, Souza JM, Pereira EC. Photoinduced photoluminescence intensity enhancement in poly(p-phenylene vinylene) films [Internet]. Applied Physics Letters. 2002 ;81( 5): 942-944.[citado 2025 nov. 04 ] Available from: https://doi.org/10.1063/1.1497198
Vancouver
Gobato YG, Marletta A, Faria RM, Guimarães FEG, Souza JM, Pereira EC. Photoinduced photoluminescence intensity enhancement in poly(p-phenylene vinylene) films [Internet]. Applied Physics Letters. 2002 ;81( 5): 942-944.[citado 2025 nov. 04 ] Available from: https://doi.org/10.1063/1.1497198
Artigo de periodico
Visible photoluminescence in amorphous 'ABO IND. 3' perovskites (2002)
Pizani, Paulo Sérgio; Basso, Heitor Cury; Lanciotti Junior, Francesco; Boschi, T. M.; Pontes, F. M; Silva, Elson Longo da; Leite, Édson Roberto
Source: Applied Physics Letters. Unidade: EESC
Assunto: FOTOLUMINESCÊNCIA
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ABNT
PIZANI, Paulo Sérgio et al. Visible photoluminescence in amorphous 'ABO IND. 3' perovskites. Applied Physics Letters, v. 81, n. 2, p. 253-255, 2002Tradução . . Disponível em: http://ojps.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=APPLAB000081000002000253000001&idtype=cvips. Acesso em: 04 nov. 2025.
APA
Pizani, P. S., Basso, H. C., Lanciotti Junior, F., Boschi, T. M., Pontes, F. M., Silva, E. L. da, & Leite, É. R. (2002). Visible photoluminescence in amorphous 'ABO IND. 3' perovskites. Applied Physics Letters, 81( 2), 253-255. Recuperado de http://ojps.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=APPLAB000081000002000253000001&idtype=cvips
NLM
Pizani PS, Basso HC, Lanciotti Junior F, Boschi TM, Pontes FM, Silva EL da, Leite ÉR. Visible photoluminescence in amorphous 'ABO IND. 3' perovskites [Internet]. Applied Physics Letters. 2002 ; 81( 2): 253-255.[citado 2025 nov. 04 ] Available from: http://ojps.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=APPLAB000081000002000253000001&idtype=cvips
Vancouver
Pizani PS, Basso HC, Lanciotti Junior F, Boschi TM, Pontes FM, Silva EL da, Leite ÉR. Visible photoluminescence in amorphous 'ABO IND. 3' perovskites [Internet]. Applied Physics Letters. 2002 ; 81( 2): 253-255.[citado 2025 nov. 04 ] Available from: http://ojps.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=APPLAB000081000002000253000001&idtype=cvips
Artigo de periodico
Nanostructure of sol-gel films by x-ray specular reflectivity (2002)
Morelhão, Sérgio Luiz; Brito, Giancarlo Esposito de Souza; Abramof, E
Source: Applied Physics Letters. Unidade: IF
Assunto: FILMES FINOS
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ABNT
MORELHÃO, Sérgio Luiz e BRITO, Giancarlo Esposito de Souza e ABRAMOF, E. Nanostructure of sol-gel films by x-ray specular reflectivity. Applied Physics Letters, v. 80, n. 3, p. 407-409, 2002Tradução . . Disponível em: https://doi.org/10.1063/1.1436271. Acesso em: 04 nov. 2025.
APA
Morelhão, S. L., Brito, G. E. de S., & Abramof, E. (2002). Nanostructure of sol-gel films by x-ray specular reflectivity. Applied Physics Letters, 80( 3), 407-409. doi:10.1063/1.1436271
NLM
Morelhão SL, Brito GE de S, Abramof E. Nanostructure of sol-gel films by x-ray specular reflectivity [Internet]. Applied Physics Letters. 2002 ; 80( 3): 407-409.[citado 2025 nov. 04 ] Available from: https://doi.org/10.1063/1.1436271
Vancouver
Morelhão SL, Brito GE de S, Abramof E. Nanostructure of sol-gel films by x-ray specular reflectivity [Internet]. Applied Physics Letters. 2002 ; 80( 3): 407-409.[citado 2025 nov. 04 ] Available from: https://doi.org/10.1063/1.1436271
Artigo de periodico
Zn-induced features at the GaAs(110) surface and its importance in the growth of ZnSe on GaAs(110) (2002)
Miotto, R; Ferraz, A. C.
Source: Applied Physics Letters. Unidade: IF
Subjects: SUPERFÍCIE FÍSICA, MICROSCOPIA ELETRÔNICA DE VARREDURA
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ABNT
MIOTTO, R e FERRAZ, A. C. Zn-induced features at the GaAs(110) surface and its importance in the growth of ZnSe on GaAs(110). Applied Physics Letters, v. 81, n. 3, p. 481-483, 2002Tradução . . Disponível em: https://doi.org/10.1063/1.1494456. Acesso em: 04 nov. 2025.
APA
Miotto, R., & Ferraz, A. C. (2002). Zn-induced features at the GaAs(110) surface and its importance in the growth of ZnSe on GaAs(110). Applied Physics Letters, 81( 3), 481-483. doi:10.1063/1.1494456
NLM
Miotto R, Ferraz AC. Zn-induced features at the GaAs(110) surface and its importance in the growth of ZnSe on GaAs(110) [Internet]. Applied Physics Letters. 2002 ; 81( 3): 481-483.[citado 2025 nov. 04 ] Available from: https://doi.org/10.1063/1.1494456
Vancouver
Miotto R, Ferraz AC. Zn-induced features at the GaAs(110) surface and its importance in the growth of ZnSe on GaAs(110) [Internet]. Applied Physics Letters. 2002 ; 81( 3): 481-483.[citado 2025 nov. 04 ] Available from: https://doi.org/10.1063/1.1494456
Artigo de periodico
Spinodal decomposition in 'B IND.X' Ga IND.1-X'N alloys (2002)
Teles, L. K.; Scolfaro, L M R; Leite, J. R.; Furthmuller, K; Bechstedt, F
Source: Applied Physics Letters. Unidade: IF
Subjects: TERMODINÂMICA, SEMICONDUTORES
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ABNT
TELES, L. K. et al. Spinodal decomposition in 'B IND.X' Ga IND.1-X'N alloys. Applied Physics Letters, v. 80, n. 7, p. 1177-1178, 2002Tradução . . Disponível em: http://ojps.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=APPLAB000080000007001177000001&idtype=cvips. Acesso em: 04 nov. 2025.
APA
Teles, L. K., Scolfaro, L. M. R., Leite, J. R., Furthmuller, K., & Bechstedt, F. (2002). Spinodal decomposition in 'B IND.X' Ga IND.1-X'N alloys. Applied Physics Letters, 80( 7), 1177-1178. Recuperado de http://ojps.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=APPLAB000080000007001177000001&idtype=cvips
NLM
Teles LK, Scolfaro LMR, Leite JR, Furthmuller K, Bechstedt F. Spinodal decomposition in 'B IND.X' Ga IND.1-X'N alloys [Internet]. Applied Physics Letters. 2002 ; 80( 7): 1177-1178.[citado 2025 nov. 04 ] Available from: http://ojps.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=APPLAB000080000007001177000001&idtype=cvips
Vancouver
Teles LK, Scolfaro LMR, Leite JR, Furthmuller K, Bechstedt F. Spinodal decomposition in 'B IND.X' Ga IND.1-X'N alloys [Internet]. Applied Physics Letters. 2002 ; 80( 7): 1177-1178.[citado 2025 nov. 04 ] Available from: http://ojps.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=APPLAB000080000007001177000001&idtype=cvips
Artigo de periodico
Real-time determination of the segregation strength of indium atoms in InGaAs layers grown by molecular-beam epitaxy (2002)
Martini, S; Quivy, A. A.; Silva, Euzi Conceicao Fernandes da; Leite, J. R.
Source: Applied Physics Letters. Unidade: IF
Subjects: SEMICONDUTORES, SUPERFÍCIE FÍSICA
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ABNT
MARTINI, S et al. Real-time determination of the segregation strength of indium atoms in InGaAs layers grown by molecular-beam epitaxy. Applied Physics Letters, v. 81, n. 15, p. 2863-2865, 2002Tradução . . Disponível em: https://doi.org/10.1063/1.1513182. Acesso em: 04 nov. 2025.
APA
Martini, S., Quivy, A. A., Silva, E. C. F. da, & Leite, J. R. (2002). Real-time determination of the segregation strength of indium atoms in InGaAs layers grown by molecular-beam epitaxy. Applied Physics Letters, 81( 15), 2863-2865. doi:10.1063/1.1513182
NLM
Martini S, Quivy AA, Silva ECF da, Leite JR. Real-time determination of the segregation strength of indium atoms in InGaAs layers grown by molecular-beam epitaxy [Internet]. Applied Physics Letters. 2002 ; 81( 15): 2863-2865.[citado 2025 nov. 04 ] Available from: https://doi.org/10.1063/1.1513182
Vancouver
Martini S, Quivy AA, Silva ECF da, Leite JR. Real-time determination of the segregation strength of indium atoms in InGaAs layers grown by molecular-beam epitaxy [Internet]. Applied Physics Letters. 2002 ; 81( 15): 2863-2865.[citado 2025 nov. 04 ] Available from: https://doi.org/10.1063/1.1513182
Artigo de periodico
Contamination due to memory effects in filtered vacuum arc plasma deposition systems (2002)
Martins, Deilton Reis; Salvadori, Maria Cecília Barbosa da Silveira; Verdonck, Patrick Bernard; Brown, I G
Source: Applied Physics Letters. Unidades: IF, EP
Subjects: VÁCUO, FÍSICA DE PLASMAS, FILMES FINOS
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ABNT
MARTINS, Deilton Reis et al. Contamination due to memory effects in filtered vacuum arc plasma deposition systems. Applied Physics Letters, v. 81, n. 11, p. 1969-1971, 2002Tradução . . Disponível em: https://doi.org/10.1063/1.1506019. Acesso em: 04 nov. 2025.
APA
Martins, D. R., Salvadori, M. C. B. da S., Verdonck, P. B., & Brown, I. G. (2002). Contamination due to memory effects in filtered vacuum arc plasma deposition systems. Applied Physics Letters, 81( 11), 1969-1971. doi:10.1063/1.1506019
NLM
Martins DR, Salvadori MCB da S, Verdonck PB, Brown IG. Contamination due to memory effects in filtered vacuum arc plasma deposition systems [Internet]. Applied Physics Letters. 2002 ; 81( 11): 1969-1971.[citado 2025 nov. 04 ] Available from: https://doi.org/10.1063/1.1506019
Vancouver
Martins DR, Salvadori MCB da S, Verdonck PB, Brown IG. Contamination due to memory effects in filtered vacuum arc plasma deposition systems [Internet]. Applied Physics Letters. 2002 ; 81( 11): 1969-1971.[citado 2025 nov. 04 ] Available from: https://doi.org/10.1063/1.1506019
Artigo de periodico
In situ characterization of the grain and grain-boundary electrical responses of zirconia ceramics under uniaxial compressive stresses (2002)
M'Peko, Jean-Claude ; Spavieri Junior, Deusdedit Lineu; Souza, Milton Ferreira de
Source: Applied Physics Letters. Unidade: IFSC
Subjects: MATERIAIS (PROPRIEDADES ELÉTRICAS), ELETRÓLITOS, MATERIAIS (PROPRIEDADES MECÂNICAS)
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ABNT
M'PEKO, Jean-Claude e SPAVIERI JUNIOR, Deusdedit Lineu e SOUZA, Milton Ferreira de. In situ characterization of the grain and grain-boundary electrical responses of zirconia ceramics under uniaxial compressive stresses. Applied Physics Letters, v. 81, n. 15, p. 2827-2829, 2002Tradução . . Disponível em: https://doi.org/10.1063/1.1512328. Acesso em: 04 nov. 2025.
APA
M'Peko, J. -C., Spavieri Junior, D. L., & Souza, M. F. de. (2002). In situ characterization of the grain and grain-boundary electrical responses of zirconia ceramics under uniaxial compressive stresses. Applied Physics Letters, 81( 15), 2827-2829. doi:10.1063/1.1512328
NLM
M'Peko J-C, Spavieri Junior DL, Souza MF de. In situ characterization of the grain and grain-boundary electrical responses of zirconia ceramics under uniaxial compressive stresses [Internet]. Applied Physics Letters. 2002 ; 81( 15): 2827-2829.[citado 2025 nov. 04 ] Available from: https://doi.org/10.1063/1.1512328
Vancouver
M'Peko J-C, Spavieri Junior DL, Souza MF de. In situ characterization of the grain and grain-boundary electrical responses of zirconia ceramics under uniaxial compressive stresses [Internet]. Applied Physics Letters. 2002 ; 81( 15): 2827-2829.[citado 2025 nov. 04 ] Available from: https://doi.org/10.1063/1.1512328
Artigo de periodico
Phase separation suppression in InGaN epitaxial layers due to biaxial strain (2002)
Tabata, A; Teles, L. K.; Scolfaro, Luisa Maria Ribeiro; Leite, J. R.; Kharchenko, A; Frey, T; As, D J; Schikora, D; Lischka, K; Furthmüller, J; Bechstedt, F
Source: Applied Physics Letters. Unidade: IF
Subjects: SEMICONDUTORES, ESPECTROSCOPIA RAMAN
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ABNT
TABATA, A et al. Phase separation suppression in InGaN epitaxial layers due to biaxial strain. Applied Physics Letters, v. 80, n. 5, p. 769-771, 2002Tradução . . Disponível em: https://doi.org/10.1063/1.1436270. Acesso em: 04 nov. 2025.
APA
Tabata, A., Teles, L. K., Scolfaro, L. M. R., Leite, J. R., Kharchenko, A., Frey, T., et al. (2002). Phase separation suppression in InGaN epitaxial layers due to biaxial strain. Applied Physics Letters, 80( 5), 769-771. doi:10.1063/1.1436270
NLM
Tabata A, Teles LK, Scolfaro LMR, Leite JR, Kharchenko A, Frey T, As DJ, Schikora D, Lischka K, Furthmüller J, Bechstedt F. Phase separation suppression in InGaN epitaxial layers due to biaxial strain [Internet]. Applied Physics Letters. 2002 ; 80( 5): 769-771.[citado 2025 nov. 04 ] Available from: https://doi.org/10.1063/1.1436270
Vancouver
Tabata A, Teles LK, Scolfaro LMR, Leite JR, Kharchenko A, Frey T, As DJ, Schikora D, Lischka K, Furthmüller J, Bechstedt F. Phase separation suppression in InGaN epitaxial layers due to biaxial strain [Internet]. Applied Physics Letters. 2002 ; 80( 5): 769-771.[citado 2025 nov. 04 ] Available from: https://doi.org/10.1063/1.1436270
Artigo de periodico
Stability and electronic structure of hydrogen-nitrogen complexes in GaAs (2002)
Orellana, W; Ferraz, A. C.
Source: Applied Physics Letters. Unidade: IF
Assunto: ESTRUTURA ELETRÔNICA
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ABNT
ORELLANA, W e FERRAZ, A. C. Stability and electronic structure of hydrogen-nitrogen complexes in GaAs. Applied Physics Letters, v. 81, n. 20, p. 3816-3818, 2002Tradução . . Disponível em: https://doi.org/10.1063/1.1521571. Acesso em: 04 nov. 2025.
APA
Orellana, W., & Ferraz, A. C. (2002). Stability and electronic structure of hydrogen-nitrogen complexes in GaAs. Applied Physics Letters, 81( 20), 3816-3818. doi:10.1063/1.1521571
NLM
Orellana W, Ferraz AC. Stability and electronic structure of hydrogen-nitrogen complexes in GaAs [Internet]. Applied Physics Letters. 2002 ; 81( 20): 3816-3818.[citado 2025 nov. 04 ] Available from: https://doi.org/10.1063/1.1521571
Vancouver
Orellana W, Ferraz AC. Stability and electronic structure of hydrogen-nitrogen complexes in GaAs [Internet]. Applied Physics Letters. 2002 ; 81( 20): 3816-3818.[citado 2025 nov. 04 ] Available from: https://doi.org/10.1063/1.1521571
Artigo de periodico
Spin splitting of the electron ground states of InAs quantum dots (2002)
Medeiros-Ribeiro, G.; Pinheiro, M. V. B.; Pimentel, V. L.; Marega Junior, Euclydes
Source: Applied Physics Letters. Unidade: IFSC
Assunto: FÍSICA DA MATÉRIA CONDENSADA
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ABNT
MEDEIROS-RIBEIRO, G. et al. Spin splitting of the electron ground states of InAs quantum dots. Applied Physics Letters, v. 80, n. Ju 2002, p. 4229-4231, 2002Tradução . . Disponível em: https://doi.org/10.1063/1.1483112. Acesso em: 04 nov. 2025.
APA
Medeiros-Ribeiro, G., Pinheiro, M. V. B., Pimentel, V. L., & Marega Junior, E. (2002). Spin splitting of the electron ground states of InAs quantum dots. Applied Physics Letters, 80( Ju 2002), 4229-4231. doi:10.1063/1.1483112
NLM
Medeiros-Ribeiro G, Pinheiro MVB, Pimentel VL, Marega Junior E. Spin splitting of the electron ground states of InAs quantum dots [Internet]. Applied Physics Letters. 2002 ;80( Ju 2002): 4229-4231.[citado 2025 nov. 04 ] Available from: https://doi.org/10.1063/1.1483112
Vancouver
Medeiros-Ribeiro G, Pinheiro MVB, Pimentel VL, Marega Junior E. Spin splitting of the electron ground states of InAs quantum dots [Internet]. Applied Physics Letters. 2002 ;80( Ju 2002): 4229-4231.[citado 2025 nov. 04 ] Available from: https://doi.org/10.1063/1.1483112
Artigo de periodico
Optical diffraction grattings produced by laser interference structuring of amorphous germanium-nitrogen alloys (2002)
Mulato, Marcelo; Zanatta, Antonio Ricardo ; Toet, D; Chambouleyron, I E
Source: Applied Physics Letters. Unidades: FFCLRP, IFSC
Assunto: FÍSICA DA MATÉRIA CONDENSADA
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ABNT
MULATO, Marcelo et al. Optical diffraction grattings produced by laser interference structuring of amorphous germanium-nitrogen alloys. Applied Physics Letters, v. 81, n. 15, p. 2731-2733, 2002Tradução . . Disponível em: https://doi.org/10.1063/1.1512307. Acesso em: 04 nov. 2025.
APA
Mulato, M., Zanatta, A. R., Toet, D., & Chambouleyron, I. E. (2002). Optical diffraction grattings produced by laser interference structuring of amorphous germanium-nitrogen alloys. Applied Physics Letters, 81( 15), 2731-2733. doi:10.1063/1.1512307
NLM
Mulato M, Zanatta AR, Toet D, Chambouleyron IE. Optical diffraction grattings produced by laser interference structuring of amorphous germanium-nitrogen alloys [Internet]. Applied Physics Letters. 2002 ; 81( 15): 2731-2733.[citado 2025 nov. 04 ] Available from: https://doi.org/10.1063/1.1512307
Vancouver
Mulato M, Zanatta AR, Toet D, Chambouleyron IE. Optical diffraction grattings produced by laser interference structuring of amorphous germanium-nitrogen alloys [Internet]. Applied Physics Letters. 2002 ; 81( 15): 2731-2733.[citado 2025 nov. 04 ] Available from: https://doi.org/10.1063/1.1512307
Artigo de periodico
Fluorescence quantum efficiency measurements of excitation and nonradiative deexcitation processes of rare earth 4 f-states in chalcogenide glasses (2002)
Lima, S M; de Camargo, Andrea Simone Stucchi ; Nunes, Luiz Antônio de Oliveira ; Catunda, Tomaz ; Hewak, D W
Source: Applied Physics Letters. Unidade: IFSC
Assunto: FÍSICA DA MATÉRIA CONDENSADA
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ABNT
LIMA, S M et al. Fluorescence quantum efficiency measurements of excitation and nonradiative deexcitation processes of rare earth 4 f-states in chalcogenide glasses. Applied Physics Letters, v. 81, n. 4, p. 589-591, 2002Tradução . . Disponível em: https://doi.org/10.1063/1.1495879. Acesso em: 04 nov. 2025.
APA
Lima, S. M., de Camargo, A. S. S., Nunes, L. A. de O., Catunda, T., & Hewak, D. W. (2002). Fluorescence quantum efficiency measurements of excitation and nonradiative deexcitation processes of rare earth 4 f-states in chalcogenide glasses. Applied Physics Letters, 81( 4), 589-591. doi:10.1063/1.1495879
NLM
Lima SM, de Camargo ASS, Nunes LA de O, Catunda T, Hewak DW. Fluorescence quantum efficiency measurements of excitation and nonradiative deexcitation processes of rare earth 4 f-states in chalcogenide glasses [Internet]. Applied Physics Letters. 2002 ; 81( 4): 589-591.[citado 2025 nov. 04 ] Available from: https://doi.org/10.1063/1.1495879
Vancouver
Lima SM, de Camargo ASS, Nunes LA de O, Catunda T, Hewak DW. Fluorescence quantum efficiency measurements of excitation and nonradiative deexcitation processes of rare earth 4 f-states in chalcogenide glasses [Internet]. Applied Physics Letters. 2002 ; 81( 4): 589-591.[citado 2025 nov. 04 ] Available from: https://doi.org/10.1063/1.1495879
Artigo de periodico
Ab initio calculations of vacancies in 'Si IND.X' 'Ge IND.1-X' (2002)
Dalpian, Gustavo Martini ; Venezuela, Pedro; Silva, Antonio Jose Roque da; Fazzio, Adalberto
Source: Applied Physics Letters. Unidade: IF
Assunto: ESTRUTURA ELETRÔNICA
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ABNT
DALPIAN, Gustavo Martini et al. Ab initio calculations of vacancies in 'Si IND.X' 'Ge IND.1-X'. Applied Physics Letters, v. 81, n. 8, p. 3383-3385, 2002Tradução . . Disponível em: http://ojps.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=APPLAB000081000018003383000001&idtype=cvips. Acesso em: 04 nov. 2025.
APA
Dalpian, G. M., Venezuela, P., Silva, A. J. R. da, & Fazzio, A. (2002). Ab initio calculations of vacancies in 'Si IND.X' 'Ge IND.1-X'. Applied Physics Letters, 81( 8), 3383-3385. Recuperado de http://ojps.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=APPLAB000081000018003383000001&idtype=cvips
NLM
Dalpian GM, Venezuela P, Silva AJR da, Fazzio A. Ab initio calculations of vacancies in 'Si IND.X' 'Ge IND.1-X' [Internet]. Applied Physics Letters. 2002 ; 81( 8): 3383-3385.[citado 2025 nov. 04 ] Available from: http://ojps.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=APPLAB000081000018003383000001&idtype=cvips
Vancouver
Dalpian GM, Venezuela P, Silva AJR da, Fazzio A. Ab initio calculations of vacancies in 'Si IND.X' 'Ge IND.1-X' [Internet]. Applied Physics Letters. 2002 ; 81( 8): 3383-3385.[citado 2025 nov. 04 ] Available from: http://ojps.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=APPLAB000081000018003383000001&idtype=cvips
Artigo de periodico
Structural properties of aluminum - nitrogen films prepared at low temperature (2002)
Ribeiro, C. T. M.; Alvarez, F.; Zanatta, Antonio Ricardo
Source: Applied Physics Letters. Unidade: IFSC
Assunto: FÍSICA DA MATÉRIA CONDENSADA
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ABNT
RIBEIRO, C. T. M. e ALVAREZ, F. e ZANATTA, Antonio Ricardo. Structural properties of aluminum - nitrogen films prepared at low temperature. Applied Physics Letters, v. 81, n. 6, p. 1005-1007, 2002Tradução . . Disponível em: https://doi.org/10.1063/1.1498002. Acesso em: 04 nov. 2025.
APA
Ribeiro, C. T. M., Alvarez, F., & Zanatta, A. R. (2002). Structural properties of aluminum - nitrogen films prepared at low temperature. Applied Physics Letters, 81( 6), 1005-1007. doi:10.1063/1.1498002
NLM
Ribeiro CTM, Alvarez F, Zanatta AR. Structural properties of aluminum - nitrogen films prepared at low temperature [Internet]. Applied Physics Letters. 2002 ;81( 6): 1005-1007.[citado 2025 nov. 04 ] Available from: https://doi.org/10.1063/1.1498002
Vancouver
Ribeiro CTM, Alvarez F, Zanatta AR. Structural properties of aluminum - nitrogen films prepared at low temperature [Internet]. Applied Physics Letters. 2002 ;81( 6): 1005-1007.[citado 2025 nov. 04 ] Available from: https://doi.org/10.1063/1.1498002
Artigo de periodico
Interchain interaction and Davydovy splitting in polythiophene crystals: an ab initio approach (2002)
Bussi, G; Ruini, A; Molinari, E; Caldas, Marilia Junqueira ; Puschning, P; Ambrosch-Draxl, C
Source: Applied Physics Letters. Unidade: IF
Subjects: POLÍMEROS (MATERIAIS), MATÉRIA CONDENSADA
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ABNT
BUSSI, G et al. Interchain interaction and Davydovy splitting in polythiophene crystals: an ab initio approach. Applied Physics Letters, v. 80, n. 22, p. 4118-4120, 2002Tradução . . Disponível em: https://doi.org/10.1063/1.1483905. Acesso em: 04 nov. 2025.
APA
Bussi, G., Ruini, A., Molinari, E., Caldas, M. J., Puschning, P., & Ambrosch-Draxl, C. (2002). Interchain interaction and Davydovy splitting in polythiophene crystals: an ab initio approach. Applied Physics Letters, 80( 22), 4118-4120. doi:10.1063/1.1483905
NLM
Bussi G, Ruini A, Molinari E, Caldas MJ, Puschning P, Ambrosch-Draxl C. Interchain interaction and Davydovy splitting in polythiophene crystals: an ab initio approach [Internet]. Applied Physics Letters. 2002 ; 80( 22): 4118-4120.[citado 2025 nov. 04 ] Available from: https://doi.org/10.1063/1.1483905
Vancouver
Bussi G, Ruini A, Molinari E, Caldas MJ, Puschning P, Ambrosch-Draxl C. Interchain interaction and Davydovy splitting in polythiophene crystals: an ab initio approach [Internet]. Applied Physics Letters. 2002 ; 80( 22): 4118-4120.[citado 2025 nov. 04 ] Available from: https://doi.org/10.1063/1.1483905

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