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Artigo de periodico
Sensitivity Bragg surface diffraction to analyze ion-implanted semiconductors (1997)
Hayashi, M A; Morelhão, Sérgio Luiz; Avanci, L H; Cardoso, L P; Sasaki, J M; Kretly, L C; Chang, S L
Source: Applied Physics Letters. Unidade: IF
Assunto: SEMICONDUTORES
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ABNT
HAYASHI, M A et al. Sensitivity Bragg surface diffraction to analyze ion-implanted semiconductors. Applied Physics Letters, v. 71, n. 18, p. 2614-2616. 1997, 1997Tradução . . Disponível em: https://doi.org/10.1063/1.120157. Acesso em: 04 nov. 2025.
APA
Hayashi, M. A., Morelhão, S. L., Avanci, L. H., Cardoso, L. P., Sasaki, J. M., Kretly, L. C., & Chang, S. L. (1997). Sensitivity Bragg surface diffraction to analyze ion-implanted semiconductors. Applied Physics Letters, 71( 18), 2614-2616. 1997. doi:10.1063/1.120157
NLM
Hayashi MA, Morelhão SL, Avanci LH, Cardoso LP, Sasaki JM, Kretly LC, Chang SL. Sensitivity Bragg surface diffraction to analyze ion-implanted semiconductors [Internet]. Applied Physics Letters. 1997 ; 71( 18): 2614-2616. 1997.[citado 2025 nov. 04 ] Available from: https://doi.org/10.1063/1.120157
Vancouver
Hayashi MA, Morelhão SL, Avanci LH, Cardoso LP, Sasaki JM, Kretly LC, Chang SL. Sensitivity Bragg surface diffraction to analyze ion-implanted semiconductors [Internet]. Applied Physics Letters. 1997 ; 71( 18): 2614-2616. 1997.[citado 2025 nov. 04 ] Available from: https://doi.org/10.1063/1.120157
Artigo de periodico
Alternating current conductivity in doped and undoped poly(o-methoxyaniline) (1997)
Lepienski, C M; Faria, Roberto Mendonça ; Leal Ferreira, Guilherme Fontes
Source: Applied Physics Letters. Unidade: IFSC
Assunto: FÍSICO-QUÍMICA
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ABNT
LEPIENSKI, C M e FARIA, Roberto Mendonça e LEAL FERREIRA, Guilherme Fontes. Alternating current conductivity in doped and undoped poly(o-methoxyaniline). Applied Physics Letters, v. 70, n. 14, p. 1906-1908, 1997Tradução . . Disponível em: https://doi.org/10.1063/1.118688. Acesso em: 04 nov. 2025.
APA
Lepienski, C. M., Faria, R. M., & Leal Ferreira, G. F. (1997). Alternating current conductivity in doped and undoped poly(o-methoxyaniline). Applied Physics Letters, 70( 14), 1906-1908. doi:10.1063/1.118688
NLM
Lepienski CM, Faria RM, Leal Ferreira GF. Alternating current conductivity in doped and undoped poly(o-methoxyaniline) [Internet]. Applied Physics Letters. 1997 ; 70( 14): 1906-1908.[citado 2025 nov. 04 ] Available from: https://doi.org/10.1063/1.118688
Vancouver
Lepienski CM, Faria RM, Leal Ferreira GF. Alternating current conductivity in doped and undoped poly(o-methoxyaniline) [Internet]. Applied Physics Letters. 1997 ; 70( 14): 1906-1908.[citado 2025 nov. 04 ] Available from: https://doi.org/10.1063/1.118688
Artigo de periodico
Z-scan measurements with Fourier analysis in ion-doped solids (1997)
Mendonça, Cleber Renato ; Misoguti, Lino ; Zílio, Sérgio Carlos
Source: Applied Physics Letters. Unidade: IFSC
Subjects: MATÉRIA CONDENSADA, MATÉRIA CONDENSADA
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ABNT
MENDONÇA, Cleber Renato e MISOGUTI, Lino e ZÍLIO, Sérgio Carlos. Z-scan measurements with Fourier analysis in ion-doped solids. Applied Physics Letters, v. 71, n. 5, p. 2094-2096, 1997Tradução . . Disponível em: https://doi.org/10.1063/1.119352. Acesso em: 04 nov. 2025.
APA
Mendonça, C. R., Misoguti, L., & Zílio, S. C. (1997). Z-scan measurements with Fourier analysis in ion-doped solids. Applied Physics Letters, 71( 5), 2094-2096. doi:10.1063/1.119352
NLM
Mendonça CR, Misoguti L, Zílio SC. Z-scan measurements with Fourier analysis in ion-doped solids [Internet]. Applied Physics Letters. 1997 ; 71( 5): 2094-2096.[citado 2025 nov. 04 ] Available from: https://doi.org/10.1063/1.119352
Vancouver
Mendonça CR, Misoguti L, Zílio SC. Z-scan measurements with Fourier analysis in ion-doped solids [Internet]. Applied Physics Letters. 1997 ; 71( 5): 2094-2096.[citado 2025 nov. 04 ] Available from: https://doi.org/10.1063/1.119352
Artigo de periodico
The role of hydrogen in nitrogen - containing diamondlike films studied by photoelectron spectroscopy (1997)
Souto, Sérgio Paulo Amaral; Alvarez, F (*)
Source: Applied Physics Letters. Unidade: FZEA
Assunto: MATERIAIS MAGNÉTICOS
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ABNT
SOUTO, Sérgio Paulo Amaral e ALVAREZ, F (*). The role of hydrogen in nitrogen - containing diamondlike films studied by photoelectron spectroscopy. Applied Physics Letters, v. 70, n. 12, p. 1539-1541, 1997Tradução . . Disponível em: https://doi.org/10.1063/1.118611. Acesso em: 04 nov. 2025.
APA
Souto, S. P. A., & Alvarez, F. (*). (1997). The role of hydrogen in nitrogen - containing diamondlike films studied by photoelectron spectroscopy. Applied Physics Letters, 70( 12), 1539-1541. doi:10.1063/1.118611
NLM
Souto SPA, Alvarez F (*). The role of hydrogen in nitrogen - containing diamondlike films studied by photoelectron spectroscopy [Internet]. Applied Physics Letters. 1997 ; 70( 12): 1539-1541.[citado 2025 nov. 04 ] Available from: https://doi.org/10.1063/1.118611
Vancouver
Souto SPA, Alvarez F (*). The role of hydrogen in nitrogen - containing diamondlike films studied by photoelectron spectroscopy [Internet]. Applied Physics Letters. 1997 ; 70( 12): 1539-1541.[citado 2025 nov. 04 ] Available from: https://doi.org/10.1063/1.118611
Artigo de periodico
Measurement of saturation intensity in ion doped solids by transient nonlinear refraction (1997)
Pilla, V; Impinnisi, P R; Catunda, Tomaz
Source: Applied Physics Letters. Unidade: IFSC
Assunto: MATÉRIA CONDENSADA
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ABNT
PILLA, V e IMPINNISI, P R e CATUNDA, Tomaz. Measurement of saturation intensity in ion doped solids by transient nonlinear refraction. Applied Physics Letters, v. 70, n. 7 , p. 817-819, 1997Tradução . . Disponível em: https://doi.org/10.1063/1.118232. Acesso em: 04 nov. 2025.
APA
Pilla, V., Impinnisi, P. R., & Catunda, T. (1997). Measurement of saturation intensity in ion doped solids by transient nonlinear refraction. Applied Physics Letters, 70( 7 ), 817-819. doi:10.1063/1.118232
NLM
Pilla V, Impinnisi PR, Catunda T. Measurement of saturation intensity in ion doped solids by transient nonlinear refraction [Internet]. Applied Physics Letters. 1997 ; 70( 7 ): 817-819.[citado 2025 nov. 04 ] Available from: https://doi.org/10.1063/1.118232
Vancouver
Pilla V, Impinnisi PR, Catunda T. Measurement of saturation intensity in ion doped solids by transient nonlinear refraction [Internet]. Applied Physics Letters. 1997 ; 70( 7 ): 817-819.[citado 2025 nov. 04 ] Available from: https://doi.org/10.1063/1.118232
Artigo de periodico
Infrared spectroscopy of Er-containing amorphous silicon thin films (1997)
Zanatta, Antonio Ricardo ; Nunes, Luiz Antônio de Oliveira
Source: Applied Physics Letters. Unidade: IFSC
Subjects: MATÉRIA CONDENSADA, MATÉRIA CONDENSADA
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ABNT
ZANATTA, Antonio Ricardo e NUNES, Luiz Antônio de Oliveira. Infrared spectroscopy of Er-containing amorphous silicon thin films. Applied Physics Letters, v. 71, n. 25, p. 3679-3681, 1997Tradução . . Disponível em: https://doi.org/10.1063/1.120479. Acesso em: 04 nov. 2025.
APA
Zanatta, A. R., & Nunes, L. A. de O. (1997). Infrared spectroscopy of Er-containing amorphous silicon thin films. Applied Physics Letters, 71( 25), 3679-3681. doi:10.1063/1.120479
NLM
Zanatta AR, Nunes LA de O. Infrared spectroscopy of Er-containing amorphous silicon thin films [Internet]. Applied Physics Letters. 1997 ; 71( 25): 3679-3681.[citado 2025 nov. 04 ] Available from: https://doi.org/10.1063/1.120479
Vancouver
Zanatta AR, Nunes LA de O. Infrared spectroscopy of Er-containing amorphous silicon thin films [Internet]. Applied Physics Letters. 1997 ; 71( 25): 3679-3681.[citado 2025 nov. 04 ] Available from: https://doi.org/10.1063/1.120479
Artigo de periodico
The formation of nanostructures on silicon surfaces in the presence of hydrogen (1997)
Teschke, O.; Soares, D. M.; Nunes, Luiz Antônio de Oliveira
Source: Applied Physics Letters. Unidade: IFSC
Assunto: MATÉRIA CONDENSADA
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ABNT
TESCHKE, O. e SOARES, D. M. e NUNES, Luiz Antônio de Oliveira. The formation of nanostructures on silicon surfaces in the presence of hydrogen. Applied Physics Letters, v. 70, n. 21, p. 2840-2842, 1997Tradução . . Disponível em: https://doi.org/10.1063/1.119055. Acesso em: 04 nov. 2025.
APA
Teschke, O., Soares, D. M., & Nunes, L. A. de O. (1997). The formation of nanostructures on silicon surfaces in the presence of hydrogen. Applied Physics Letters, 70( 21), 2840-2842. doi:10.1063/1.119055
NLM
Teschke O, Soares DM, Nunes LA de O. The formation of nanostructures on silicon surfaces in the presence of hydrogen [Internet]. Applied Physics Letters. 1997 ; 70( 21): 2840-2842.[citado 2025 nov. 04 ] Available from: https://doi.org/10.1063/1.119055
Vancouver
Teschke O, Soares DM, Nunes LA de O. The formation of nanostructures on silicon surfaces in the presence of hydrogen [Internet]. Applied Physics Letters. 1997 ; 70( 21): 2840-2842.[citado 2025 nov. 04 ] Available from: https://doi.org/10.1063/1.119055
Artigo de periodico
Erbium luminescente from hydrogenated amorphous silicon-erbium prepared by cosputtering (1997)
Zanatta, Antonio Ricardo ; Nunes, Luiz Antônio de Oliveira ; Tessler, L R
Source: Applied Physics Letters. Unidade: IFSC
Subjects: CIRCUITOS ELETRÔNICOS, MATÉRIA CONDENSADA
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ABNT
ZANATTA, Antonio Ricardo e NUNES, Luiz Antônio de Oliveira e TESSLER, L R. Erbium luminescente from hydrogenated amorphous silicon-erbium prepared by cosputtering. Applied Physics Letters, v. 70, n. 14, p. 511-513, 1997Tradução . . Disponível em: https://doi.org/10.1063/1.118196. Acesso em: 04 nov. 2025.
APA
Zanatta, A. R., Nunes, L. A. de O., & Tessler, L. R. (1997). Erbium luminescente from hydrogenated amorphous silicon-erbium prepared by cosputtering. Applied Physics Letters, 70( 14), 511-513. doi:10.1063/1.118196
NLM
Zanatta AR, Nunes LA de O, Tessler LR. Erbium luminescente from hydrogenated amorphous silicon-erbium prepared by cosputtering [Internet]. Applied Physics Letters. 1997 ; 70( 14): 511-513.[citado 2025 nov. 04 ] Available from: https://doi.org/10.1063/1.118196
Vancouver
Zanatta AR, Nunes LA de O, Tessler LR. Erbium luminescente from hydrogenated amorphous silicon-erbium prepared by cosputtering [Internet]. Applied Physics Letters. 1997 ; 70( 14): 511-513.[citado 2025 nov. 04 ] Available from: https://doi.org/10.1063/1.118196

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