Influence of interface trap density on vertical NW-TFETs with different source composition (2013)
Fonte: EUROSOI 2013. Nome do evento: European Workshop on Silicon on Insulator Technology, Devices and Circuits. Unidade: EP
Assunto: MICROELETRÔNICA
ABNT
MARTINO, João Antonio et al. Influence of interface trap density on vertical NW-TFETs with different source composition. 2013, Anais.. Paris: Institut Superieur d'Électronique, 2013. . Acesso em: 06 set. 2024.APA
Martino, J. A., Souza, F. N., Agopian, P. G. D., Rooyackers, R., Vandooren, A., Simoen, E., & Claeys, C. (2013). Influence of interface trap density on vertical NW-TFETs with different source composition. In EUROSOI 2013. Paris: Institut Superieur d'Électronique.NLM
Martino JA, Souza FN, Agopian PGD, Rooyackers R, Vandooren A, Simoen E, Claeys C. Influence of interface trap density on vertical NW-TFETs with different source composition. EUROSOI 2013. 2013 ;[citado 2024 set. 06 ]Vancouver
Martino JA, Souza FN, Agopian PGD, Rooyackers R, Vandooren A, Simoen E, Claeys C. Influence of interface trap density on vertical NW-TFETs with different source composition. EUROSOI 2013. 2013 ;[citado 2024 set. 06 ]