ReP USP - Resultado da busca

Trabalho de evento
Influence of the N-type finFET width on the zero temperature coefficient (2007)
Bellodi, Marcello; Martino, João Antonio ; Claeys, Cor ; Camillo, Luciano Mendes; Simoen, Eddy
Source: SBMicro 2007. Conference titles: International Symposium on Microelectronics Technology and Devices SBMICRO. Unidade: EP
Assunto: MICROELETRÔNICA
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
BELLODI, Marcello et al. Influence of the N-type finFET width on the zero temperature coefficient. 2007, Anais.. Pennington: The Electrochemical Society, 2007. . Acesso em: 26 set. 2024.
APA
Bellodi, M., Martino, J. A., Claeys, C., Camillo, L. M., & Simoen, E. (2007). Influence of the N-type finFET width on the zero temperature coefficient. In SBMicro 2007. Pennington: The Electrochemical Society.
NLM
Bellodi M, Martino JA, Claeys C, Camillo LM, Simoen E. Influence of the N-type finFET width on the zero temperature coefficient. SBMicro 2007. 2007 ;[citado 2024 set. 26 ]
Vancouver
Bellodi M, Martino JA, Claeys C, Camillo LM, Simoen E. Influence of the N-type finFET width on the zero temperature coefficient. SBMicro 2007. 2007 ;[citado 2024 set. 26 ]
Trabalho de evento
Temperature influences on the drain leakage current behavior in graded-channel SOI nMOSFETs (2005)
Bellodi, Marcello; Martino, João Antonio
Source: Microelectronics Technology and Devices SBMICRO 2005. Conference titles: International Symposium on Microelectronics Technology and Devices SBMICRO. Unidade: EP
Assunto: MICROELETRÔNICA
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
BELLODI, Marcello e MARTINO, João Antonio. Temperature influences on the drain leakage current behavior in graded-channel SOI nMOSFETs. 2005, Anais.. Pennington: The Electrochemical Society, 2005. . Acesso em: 26 set. 2024.
APA
Bellodi, M., & Martino, J. A. (2005). Temperature influences on the drain leakage current behavior in graded-channel SOI nMOSFETs. In Microelectronics Technology and Devices SBMICRO 2005. Pennington: The Electrochemical Society.
NLM
Bellodi M, Martino JA. Temperature influences on the drain leakage current behavior in graded-channel SOI nMOSFETs. Microelectronics Technology and Devices SBMICRO 2005. 2005 ;[citado 2024 set. 26 ]
Vancouver
Bellodi M, Martino JA. Temperature influences on the drain leakage current behavior in graded-channel SOI nMOSFETs. Microelectronics Technology and Devices SBMICRO 2005. 2005 ;[citado 2024 set. 26 ]
Parte de monografia/livro
The leakage drain current behavior in graded-channel SOI nMOSFETs operating up to 300 o.C (2003)
Bellodi, Marcello; Martino, João Antonio
Source: Microelectronic Technology and Devices SBMicro 2003. Unidade: EP
Assunto: MICROELETRÔNICA
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
BELLODI, Marcello e MARTINO, João Antonio. The leakage drain current behavior in graded-channel SOI nMOSFETs operating up to 300 o.C. Microelectronic Technology and Devices SBMicro 2003. Tradução . Pennington: Electrochemical Society, 2003. . . Acesso em: 26 set. 2024.
APA
Bellodi, M., & Martino, J. A. (2003). The leakage drain current behavior in graded-channel SOI nMOSFETs operating up to 300 o.C. In Microelectronic Technology and Devices SBMicro 2003. Pennington: Electrochemical Society.
NLM
Bellodi M, Martino JA. The leakage drain current behavior in graded-channel SOI nMOSFETs operating up to 300 o.C. In: Microelectronic Technology and Devices SBMicro 2003. Pennington: Electrochemical Society; 2003. [citado 2024 set. 26 ]
Vancouver
Bellodi M, Martino JA. The leakage drain current behavior in graded-channel SOI nMOSFETs operating up to 300 o.C. In: Microelectronic Technology and Devices SBMicro 2003. Pennington: Electrochemical Society; 2003. [citado 2024 set. 26 ]
Parte de monografia/livro
Comparison between the leakage drain current behavior in SOI nMOSFETs and SOI nMOSFETs operating at 300 o. C (2003)
Bellodi, Marcello; Martino, João Antonio
Source: Microelectronic Technology and Devices SBMicro 2003. Unidade: EP
Assunto: MICROELETRÔNICA
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
BELLODI, Marcello e MARTINO, João Antonio. Comparison between the leakage drain current behavior in SOI nMOSFETs and SOI nMOSFETs operating at 300 o. C. Microelectronic Technology and Devices SBMicro 2003. Tradução . Pennington: Electrochemical Society, 2003. . . Acesso em: 26 set. 2024.
APA
Bellodi, M., & Martino, J. A. (2003). Comparison between the leakage drain current behavior in SOI nMOSFETs and SOI nMOSFETs operating at 300 o. C. In Microelectronic Technology and Devices SBMicro 2003. Pennington: Electrochemical Society.
NLM
Bellodi M, Martino JA. Comparison between the leakage drain current behavior in SOI nMOSFETs and SOI nMOSFETs operating at 300 o. C. In: Microelectronic Technology and Devices SBMicro 2003. Pennington: Electrochemical Society; 2003. [citado 2024 set. 26 ]
Vancouver
Bellodi M, Martino JA. Comparison between the leakage drain current behavior in SOI nMOSFETs and SOI nMOSFETs operating at 300 o. C. In: Microelectronic Technology and Devices SBMicro 2003. Pennington: Electrochemical Society; 2003. [citado 2024 set. 26 ]
Parte de monografia/livro
Study of the leakage drain current in graded-channel SOI nMOSFETs at high-temperatures (2003)
Bellodi, Marcello; Martino, João Antonio
Source: Silicon-on-Insulator Technology and Devices XI.. Unidade: EP
Assunto: MICROELETRÔNICA
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
BELLODI, Marcello e MARTINO, João Antonio. Study of the leakage drain current in graded-channel SOI nMOSFETs at high-temperatures. Silicon-on-Insulator Technology and Devices XI. Tradução . Pennington: The Electrochemical Society, 2003. . . Acesso em: 26 set. 2024.
APA
Bellodi, M., & Martino, J. A. (2003). Study of the leakage drain current in graded-channel SOI nMOSFETs at high-temperatures. In Silicon-on-Insulator Technology and Devices XI.. Pennington: The Electrochemical Society.
NLM
Bellodi M, Martino JA. Study of the leakage drain current in graded-channel SOI nMOSFETs at high-temperatures. In: Silicon-on-Insulator Technology and Devices XI. Pennington: The Electrochemical Society; 2003. [citado 2024 set. 26 ]
Vancouver
Bellodi M, Martino JA. Study of the leakage drain current in graded-channel SOI nMOSFETs at high-temperatures. In: Silicon-on-Insulator Technology and Devices XI. Pennington: The Electrochemical Society; 2003. [citado 2024 set. 26 ]
Parte de monografia/livro
The leakage current composition in thin film SOI NMOSFETS at high temperatures (2002)
Bellodi, Marcello; Martino, João Antonio
Source: Microelectronics Technology and Devices SBMICRO 2002. Unidade: EP
Assunto: MICROELETRÔNICA
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
BELLODI, Marcello e MARTINO, João Antonio. The leakage current composition in thin film SOI NMOSFETS at high temperatures. Microelectronics Technology and Devices SBMICRO 2002. Tradução . Pennington: The Electrochemical Society, 2002. . . Acesso em: 26 set. 2024.
APA
Bellodi, M., & Martino, J. A. (2002). The leakage current composition in thin film SOI NMOSFETS at high temperatures. In Microelectronics Technology and Devices SBMICRO 2002. Pennington: The Electrochemical Society.
NLM
Bellodi M, Martino JA. The leakage current composition in thin film SOI NMOSFETS at high temperatures. In: Microelectronics Technology and Devices SBMICRO 2002. Pennington: The Electrochemical Society; 2002. [citado 2024 set. 26 ]
Vancouver
Bellodi M, Martino JA. The leakage current composition in thin film SOI NMOSFETS at high temperatures. In: Microelectronics Technology and Devices SBMICRO 2002. Pennington: The Electrochemical Society; 2002. [citado 2024 set. 26 ]

USP Schools

ReP

Filtros