Source: Journal of Integrated Circuits and Systems. Unidades: EP, EESC
Subjects: MICROELETRÔNICA, CIÊNCIA DA COMPUTAÇÃO
ABNT
OHTA, Ricardo Luís et al. Fabrication of Ti-Si-Ti metal-semiconductor-metal photodetectors using low temperature rapid thermal annealing. Journal of Integrated Circuits and Systems, v. 2, n. 2, 2007Tradução . . Acesso em: 09 out. 2024.APA
Ohta, R. L., Viana, C. E., Morimoto, N. I., & Borges, B. -H. V. (2007). Fabrication of Ti-Si-Ti metal-semiconductor-metal photodetectors using low temperature rapid thermal annealing. Journal of Integrated Circuits and Systems, 2( 2).NLM
Ohta RL, Viana CE, Morimoto NI, Borges B-HV. Fabrication of Ti-Si-Ti metal-semiconductor-metal photodetectors using low temperature rapid thermal annealing. Journal of Integrated Circuits and Systems. 2007 ;2( 2):[citado 2024 out. 09 ]Vancouver
Ohta RL, Viana CE, Morimoto NI, Borges B-HV. Fabrication of Ti-Si-Ti metal-semiconductor-metal photodetectors using low temperature rapid thermal annealing. Journal of Integrated Circuits and Systems. 2007 ;2( 2):[citado 2024 out. 09 ]