Theoretical investigation of '3D POT.N' and '4D POT.N' impurities in gan (1996)
Source: Anais. Conference titles: International Conference on the Physics of Semiconductors. Unidade: IF
Subjects: MATÉRIA CONDENSADA, MATÉRIA CONDENSADA
ABNT
FAZZIO, A. Theoretical investigation of '3D POT.N' and '4D POT.N' impurities in gan. 1996, Anais.. Singapore: World Scientific, 1996. . Acesso em: 31 out. 2024.APA
Fazzio, A. (1996). Theoretical investigation of '3D POT.N' and '4D POT.N' impurities in gan. In Anais. Singapore: World Scientific.NLM
Fazzio A. Theoretical investigation of '3D POT.N' and '4D POT.N' impurities in gan. Anais. 1996 ;[citado 2024 out. 31 ]Vancouver
Fazzio A. Theoretical investigation of '3D POT.N' and '4D POT.N' impurities in gan. Anais. 1996 ;[citado 2024 out. 31 ]