Theoretical investigation of '3D POT.N' and '4D POT.N' impurities in gan (1996)
- Autor:
- Autor USP: FAZZIO, ADALBERTO - IF
- Unidade: IF
- Subjects: MATÉRIA CONDENSADA; MATÉRIA CONDENSADA
- Language: Inglês
- Imprenta:
- Publisher: World Scientific
- Publisher place: Singapore
- Date published: 1996
- Source:
- Título do periódico: Anais
- Conference titles: International Conference on the Physics of Semiconductors
-
ABNT
FAZZIO, A. Theoretical investigation of '3D POT.N' and '4D POT.N' impurities in gan. Anais.. Singapore: World Scientific, 1996. -
APA
Fazzio, A. (1996). Theoretical investigation of '3D POT.N' and '4D POT.N' impurities in gan. In Anais. Singapore: World Scientific. -
NLM
Fazzio A. Theoretical investigation of '3D POT.N' and '4D POT.N' impurities in gan. Anais. 1996 ; -
Vancouver
Fazzio A. Theoretical investigation of '3D POT.N' and '4D POT.N' impurities in gan. Anais. 1996 ; - H2O and CO2 confined in cement based materials: an ab initio molecular dynamics study with van der Waals interactions
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