Theoretical investigation of '3D POT.N' and '4D POT.N' impurities in gan (1996)
- Autor:
- Autor USP: FAZZIO, ADALBERTO - IF
- Unidade: IF
- Subjects: MATÉRIA CONDENSADA; MATÉRIA CONDENSADA
- Language: Inglês
- Imprenta:
- Publisher: World Scientific
- Publisher place: Singapore
- Date published: 1996
- Source:
- Título do periódico: Anais
- Conference titles: International Conference on the Physics of Semiconductors
-
ABNT
FAZZIO, A. Theoretical investigation of '3D POT.N' and '4D POT.N' impurities in gan. Anais.. Singapore: World Scientific, 1996. -
APA
Fazzio, A. (1996). Theoretical investigation of '3D POT.N' and '4D POT.N' impurities in gan. In Anais. Singapore: World Scientific. -
NLM
Fazzio A. Theoretical investigation of '3D POT.N' and '4D POT.N' impurities in gan. Anais. 1996 ; -
Vancouver
Fazzio A. Theoretical investigation of '3D POT.N' and '4D POT.N' impurities in gan. Anais. 1996 ; - H2O and CO2 confined in cement based materials: an ab initio molecular dynamics study with van der Waals interactions
- Quantum spin hall effect on germanene nanoroad embedded in a c ompletely hydrogenated germanene
- Splitting of the topologically-protected dirac cone without breaking time reversal symmetry.
- A new class of large band gap quantum spin hall insulators: 2D fluorinated group-IV binary compounds
- Theoretical study of defect complexes related with antisities in GaAs
- Carbon nanotube on Si(100): structural and electronic properties
- Carbon nanotube adsorbed on Si(001)
- The interaction of point defects with a 90 'GRAUS' partial dislocation in Si
- First principles investigations of electronics and structural properties of the 'beta'-'Si IND.3' 'Na IND.4'(001) surface
- Carbon nanotube adsorbed on hydrogenated Si(001) surfaces
How to cite
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
