Theoretical investigation of '3D POT.N' and '4D POT.N' impurities in gan (1996)
- Autor:
- Autor USP: FAZZIO, ADALBERTO - IF
- Unidade: IF
- Subjects: MATÉRIA CONDENSADA; MATÉRIA CONDENSADA
- Language: Inglês
- Imprenta:
- Publisher: World Scientific
- Publisher place: Singapore
- Date published: 1996
- Source:
- Título: Anais
- Conference titles: International Conference on the Physics of Semiconductors
-
ABNT
FAZZIO, A. Theoretical investigation of '3D POT.N' and '4D POT.N' impurities in gan. 1996, Anais.. Singapore: World Scientific, 1996. . Acesso em: 15 jul. 2025. -
APA
Fazzio, A. (1996). Theoretical investigation of '3D POT.N' and '4D POT.N' impurities in gan. In Anais. Singapore: World Scientific. -
NLM
Fazzio A. Theoretical investigation of '3D POT.N' and '4D POT.N' impurities in gan. Anais. 1996 ;[citado 2025 jul. 15 ] -
Vancouver
Fazzio A. Theoretical investigation of '3D POT.N' and '4D POT.N' impurities in gan. Anais. 1996 ;[citado 2025 jul. 15 ] - Spectral distribution of photoionization cross section of 'FE POT.2+' in inp: 'FE'
- Terras raras em gap
- Estrutura eletronica e geometrica dos clusters de 'GA IND.N' 'AS IND.M' (n,m = 1-3)
- Estrutura eletronica da microestrutura: 'GA IND.N' 'AS IND.M'
- Role played by n and n-n impurities in type-'IV' semiconductors
- Theoretical investigation of the optical spectra of superconducting 'YBA IND.2''CU IND.3''O IND.7'
- Electronic structure of periodically 'SI'-'GAMA'-doped'GA''AS'
- Optical transitions in ruby across the corundum to 'Rh IND.2''O IND.3' (II) phase transformation
- Gap e 'GA''AS' dopados com 'V POT.2+': baixo spin x alto spin
- "P IND. In' antisite in InP: structural and electronic properties
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