Theoretical investigation of '3D POT.N' and '4D POT.N' impurities in gan (1996)
- Autor:
- Autor USP: FAZZIO, ADALBERTO - IF
- Unidade: IF
- Subjects: MATÉRIA CONDENSADA; MATÉRIA CONDENSADA
- Language: Inglês
- Imprenta:
- Publisher: World Scientific
- Publisher place: Singapore
- Date published: 1996
- Source:
- Título do periódico: Anais
- Conference titles: International Conference on the Physics of Semiconductors
-
ABNT
FAZZIO, A. Theoretical investigation of '3D POT.N' and '4D POT.N' impurities in gan. Anais.. Singapore: World Scientific, 1996. -
APA
Fazzio, A. (1996). Theoretical investigation of '3D POT.N' and '4D POT.N' impurities in gan. In Anais. Singapore: World Scientific. -
NLM
Fazzio A. Theoretical investigation of '3D POT.N' and '4D POT.N' impurities in gan. Anais. 1996 ; -
Vancouver
Fazzio A. Theoretical investigation of '3D POT.N' and '4D POT.N' impurities in gan. Anais. 1996 ; - Investigação ab initio das junções moleculares Au-BDAH4 (BDA)-Au
- Carrier-mediated magnetism in transition metal doped 'BI' IND. 2''SE' IND. 3' topological insulator
- Topological insulator 'BI' IND.2''SE' IND. 3'(111) surface doped with transition metals: an ab initio investigation
- Tuning low-spin to high-spin 'MN' pairs in 2-D 'ZN''O' by injecting holes
- Simulação da formação de CSi amorfo mediante resfriamento da fase cristalina por Monte Carlo contínuo
- The formation and structural properties of the amorphous-crystal interface in a nano-Si system
- "P IND. In' antisite in InP: structural and electronic properties
- Spectral distribution of photoionization cross section of 'FE POT.2+' in inp: 'FE'
- Gap e 'GA''AS' dopados com 'V POT.2+': baixo spin x alto spin
- Terras raras em gap
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