Theoretical investigation of '3D POT.N' and '4D POT.N' impurities in gan (1996)
- Autor:
- Autor USP: FAZZIO, ADALBERTO - IF
- Unidade: IF
- Subjects: MATÉRIA CONDENSADA; MATÉRIA CONDENSADA
- Language: Inglês
- Imprenta:
- Publisher: World Scientific
- Publisher place: Singapore
- Date published: 1996
- Source:
- Título: Anais
- Conference titles: International Conference on the Physics of Semiconductors
-
ABNT
FAZZIO, Adalberto. Theoretical investigation of '3D POT.N' and '4D POT.N' impurities in gan. 1996, Anais.. Singapore: World Scientific, 1996. . Acesso em: 14 mar. 2026. -
APA
Fazzio, A. (1996). Theoretical investigation of '3D POT.N' and '4D POT.N' impurities in gan. In Anais. Singapore: World Scientific. -
NLM
Fazzio A. Theoretical investigation of '3D POT.N' and '4D POT.N' impurities in gan. Anais. 1996 ;[citado 2026 mar. 14 ] -
Vancouver
Fazzio A. Theoretical investigation of '3D POT.N' and '4D POT.N' impurities in gan. Anais. 1996 ;[citado 2026 mar. 14 ] - Conformational analysis of tannic acid: environment effects in electronic and reactivity properties
- Ab initio study of n impurity in amorphous germanium
- Metastability in periodically 'DELTA'-doped 'GA''AS'
- Role played by n and n-n impurities in type-'IV' semiconductors
- Studies of the local reactivity of surfaces using chemical based principles
- Many-electron effects on the structural properties of sp impurities in semiconductors
- Dynamic spin susceptibility in the two-band model in high 'TE' superconductors
- Investigation of the many-particle spectrum of superconductor 'YBA IND.2' 'CU IND.3' 'O IND.7'
- Metallic states in Topological Insulators with Magnetic Impurities
- Non extensive thermodynamics and neutron star properties.
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