Fully analytical compact model for the I-V characteristics of resonant tunneling diodes (2021)
Conference titles: Symposium on Microelectronics Technology and Devices - SBMicro. Unidade: EESCSubjects: POTENCIAL ELÉTRICO, CIRCUITOS ELETRÔNICOS, ENGENHARIA ELÉTRICA
ABNT
CELINO, Daniel Ricardo et al. Fully analytical compact model for the I-V characteristics of resonant tunneling diodes. 2021, Anais.. Piscataway, NJ, USA: IEEE, 2021. Disponível em: https://doi.org/10.1109/SBMicro50945.2021.9585749. Acesso em: 06 nov. 2024.APA
Celino, D. R., Souza, A. M. de, Plazas, C. L. M. P., Ragi, R., & Romero, M. A. (2021). Fully analytical compact model for the I-V characteristics of resonant tunneling diodes. In . Piscataway, NJ, USA: IEEE. doi:10.1109/SBMicro50945.2021.9585749NLM
Celino DR, Souza AM de, Plazas CLMP, Ragi R, Romero MA. Fully analytical compact model for the I-V characteristics of resonant tunneling diodes [Internet]. 2021 ;[citado 2024 nov. 06 ] Available from: https://doi.org/10.1109/SBMicro50945.2021.9585749Vancouver
Celino DR, Souza AM de, Plazas CLMP, Ragi R, Romero MA. Fully analytical compact model for the I-V characteristics of resonant tunneling diodes [Internet]. 2021 ;[citado 2024 nov. 06 ] Available from: https://doi.org/10.1109/SBMicro50945.2021.9585749