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Artigo de periodico
A model potential for computing total ionization cross sections of atoms and molecules by electron impact (2021)
Falkowski, Alan Guilherme; Bettega, Marcio H F; Lima, Marco A P; Ferreira, Luiz Guimarães
Source: European Physical Journal D. Unidade: IF
Subjects: ÁTOMOS, MOLÉCULA
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ABNT
FALKOWSKI, Alan Guilherme et al. A model potential for computing total ionization cross sections of atoms and molecules by electron impact. European Physical Journal D, v. 75, 2021Tradução . . Disponível em: https://doi.org/10.1140/epjd/s10053-021-00323-0. Acesso em: 07 nov. 2024.
APA
Falkowski, A. G., Bettega, M. H. F., Lima, M. A. P., & Ferreira, L. G. (2021). A model potential for computing total ionization cross sections of atoms and molecules by electron impact. European Physical Journal D, 75. doi:10.1140/epjd/s10053-021-00323-0
NLM
Falkowski AG, Bettega MHF, Lima MAP, Ferreira LG. A model potential for computing total ionization cross sections of atoms and molecules by electron impact [Internet]. European Physical Journal D. 2021 ; 75[citado 2024 nov. 07 ] Available from: https://doi.org/10.1140/epjd/s10053-021-00323-0
Vancouver
Falkowski AG, Bettega MHF, Lima MAP, Ferreira LG. A model potential for computing total ionization cross sections of atoms and molecules by electron impact [Internet]. European Physical Journal D. 2021 ; 75[citado 2024 nov. 07 ] Available from: https://doi.org/10.1140/epjd/s10053-021-00323-0
Artigo de periodico
Approximate quasiparticle correction for calculations of the energy gap in two-dimensional materials (2018)
Guilhon, Ivan; Koda, Daniel S; Ferreira, Luiz Guimarães; Marques, Marcelo; Teles, Lara Kuhl
Source: Physical Review B. Unidade: IF
Subjects: ESTRUTURA ELETRÔNICA, SEMICONDUTIVIDADE, FILMES FINOS
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ABNT
GUILHON, Ivan et al. Approximate quasiparticle correction for calculations of the energy gap in two-dimensional materials. Physical Review B, v. 97, n. 4, 2018Tradução . . Disponível em: https://doi.org/10.1103/physrevb.97.045426. Acesso em: 07 nov. 2024.
APA
Guilhon, I., Koda, D. S., Ferreira, L. G., Marques, M., & Teles, L. K. (2018). Approximate quasiparticle correction for calculations of the energy gap in two-dimensional materials. Physical Review B, 97( 4). doi:10.1103/physrevb.97.045426
NLM
Guilhon I, Koda DS, Ferreira LG, Marques M, Teles LK. Approximate quasiparticle correction for calculations of the energy gap in two-dimensional materials [Internet]. Physical Review B. 2018 ; 97( 4):[citado 2024 nov. 07 ] Available from: https://doi.org/10.1103/physrevb.97.045426
Vancouver
Guilhon I, Koda DS, Ferreira LG, Marques M, Teles LK. Approximate quasiparticle correction for calculations of the energy gap in two-dimensional materials [Internet]. Physical Review B. 2018 ; 97( 4):[citado 2024 nov. 07 ] Available from: https://doi.org/10.1103/physrevb.97.045426
Artigo de periodico
HIV infection and antiretroviral therapy lead to unfolded protein response activation (2015)
Borsa, Mariana; Ferreira, Pedro L. C.; Petry, Andrea; Ferreira, Luiz Guimarães; Camargo, Maristela Martins de ; Bou-Habib, Dumith Chequer; Pinto, Aguinaldo Roberto
Source: Virology Journal. Unidade: ICB
Subjects: IMUNOLOGIA, HIV, WESTERN BLOTTING
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BORSA, Mariana et al. HIV infection and antiretroviral therapy lead to unfolded protein response activation. Virology Journal, v. 12, p. 1-11, 2015Tradução . . Disponível em: https://doi.org/10.1186/s12985-015-0298-0. Acesso em: 07 nov. 2024.
APA
Borsa, M., Ferreira, P. L. C., Petry, A., Ferreira, L. G., Camargo, M. M. de, Bou-Habib, D. C., & Pinto, A. R. (2015). HIV infection and antiretroviral therapy lead to unfolded protein response activation. Virology Journal, 12, 1-11. doi:10.1186/s12985-015-0298-0
NLM
Borsa M, Ferreira PLC, Petry A, Ferreira LG, Camargo MM de, Bou-Habib DC, Pinto AR. HIV infection and antiretroviral therapy lead to unfolded protein response activation [Internet]. Virology Journal. 2015 ; 12 1-11.[citado 2024 nov. 07 ] Available from: https://doi.org/10.1186/s12985-015-0298-0
Vancouver
Borsa M, Ferreira PLC, Petry A, Ferreira LG, Camargo MM de, Bou-Habib DC, Pinto AR. HIV infection and antiretroviral therapy lead to unfolded protein response activation [Internet]. Virology Journal. 2015 ; 12 1-11.[citado 2024 nov. 07 ] Available from: https://doi.org/10.1186/s12985-015-0298-0
Artigo de periodico
Combined LDA and LDA-1/2 method to obtain defect formation energies in large silicon supercells (2013)
Matusalem, Filipe; Ribeiro, Mauro; Marques, Marcelo; Pela, Ronaldo R.; Teles, Lara K.; Ferreira, Luiz Guimarães
Source: Optics Express. Unidade: IF
Subjects: MOLÉCULA, SEMICONDUTORES
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ABNT
MATUSALEM, Filipe et al. Combined LDA and LDA-1/2 method to obtain defect formation energies in large silicon supercells. Optics Express, v. 88, n. 22, p. 224102, 2013Tradução . . Disponível em: https://doi.org/10.1103/PhysRevB.88.224102. Acesso em: 07 nov. 2024.
APA
Matusalem, F., Ribeiro, M., Marques, M., Pela, R. R., Teles, L. K., & Ferreira, L. G. (2013). Combined LDA and LDA-1/2 method to obtain defect formation energies in large silicon supercells. Optics Express, 88( 22), 224102. doi:10.1103/PhysRevB.88.224102
NLM
Matusalem F, Ribeiro M, Marques M, Pela RR, Teles LK, Ferreira LG. Combined LDA and LDA-1/2 method to obtain defect formation energies in large silicon supercells [Internet]. Optics Express. 2013 ; 88( 22): 224102.[citado 2024 nov. 07 ] Available from: https://doi.org/10.1103/PhysRevB.88.224102
Vancouver
Matusalem F, Ribeiro M, Marques M, Pela RR, Teles LK, Ferreira LG. Combined LDA and LDA-1/2 method to obtain defect formation energies in large silicon supercells [Internet]. Optics Express. 2013 ; 88( 22): 224102.[citado 2024 nov. 07 ] Available from: https://doi.org/10.1103/PhysRevB.88.224102
Artigo de periodico
All-out band structure and band offset ab initio predictions for AlN/GaN and AlP/GaP interfaces (2013)
Silva Filho, O. P.; Ribeiro, M., Jr.; Pela, R. R.; Teles, L. K.; Marques, M.; Ferreira, Luiz Guimarães
Source: JOURNAL OF APPLIED PHYSICS. Unidade: IF
Subjects: ESPECTROMETRIA, SEMICONDUTORES
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ABNT
SILVA FILHO, O. P. et al. All-out band structure and band offset ab initio predictions for AlN/GaN and AlP/GaP interfaces. JOURNAL OF APPLIED PHYSICS, v. 114, n. 3, p. 033709 , 2013Tradução . . Disponível em: https://doi.org/10.1063/1.4812493. Acesso em: 07 nov. 2024.
APA
Silva Filho, O. P., Ribeiro, M., Pela, R. R., Teles, L. K., Marques, M., & Ferreira, L. G. (2013). All-out band structure and band offset ab initio predictions for AlN/GaN and AlP/GaP interfaces. JOURNAL OF APPLIED PHYSICS, 114( 3), 033709 . doi:10.1063/1.4812493
NLM
Silva Filho OP, Ribeiro M, Pela RR, Teles LK, Marques M, Ferreira LG. All-out band structure and band offset ab initio predictions for AlN/GaN and AlP/GaP interfaces [Internet]. JOURNAL OF APPLIED PHYSICS. 2013 ; 114( 3): 033709 .[citado 2024 nov. 07 ] Available from: https://doi.org/10.1063/1.4812493
Vancouver
Silva Filho OP, Ribeiro M, Pela RR, Teles LK, Marques M, Ferreira LG. All-out band structure and band offset ab initio predictions for AlN/GaN and AlP/GaP interfaces [Internet]. JOURNAL OF APPLIED PHYSICS. 2013 ; 114( 3): 033709 .[citado 2024 nov. 07 ] Available from: https://doi.org/10.1063/1.4812493
Artigo de periodico
CdSe/CdTe interface band gaps and band offsets calculated using spin–orbit and self-energy corrections (2012)
Ribeiro, M; Ferreira, Luiz Guimarães; Fonseca, L.R.C.; Ramprasad, R.
Source: Materials Science and Engineering: B. Unidade: IF
Subjects: SEMICONDUTIVIDADE, ESTRUTURA ELETRÔNICA (MODELOS MATEMÁTICOS), SEMICONDUTORES (PROPRIEDADES MAGNÉTICAS), FÍSICA ATÔMICA, FÍSICA MOLECULAR
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ABNT
RIBEIRO, M et al. CdSe/CdTe interface band gaps and band offsets calculated using spin–orbit and self-energy corrections. Materials Science and Engineering: B, v. 177, n. 16 p. 1460–1464 2012, 2012Tradução . . Disponível em: https://doi.org/10.1016/j.mseb.2011.12.044. Acesso em: 07 nov. 2024.
APA
Ribeiro, M., Ferreira, L. G., Fonseca, L. R. C., & Ramprasad, R. (2012). CdSe/CdTe interface band gaps and band offsets calculated using spin–orbit and self-energy corrections. Materials Science and Engineering: B, 177( 16 p. 1460–1464 2012). doi:10.1016/j.mseb.2011.12.044
NLM
Ribeiro M, Ferreira LG, Fonseca LRC, Ramprasad R. CdSe/CdTe interface band gaps and band offsets calculated using spin–orbit and self-energy corrections [Internet]. Materials Science and Engineering: B. 2012 ;177( 16 p. 1460–1464 2012):[citado 2024 nov. 07 ] Available from: https://doi.org/10.1016/j.mseb.2011.12.044
Vancouver
Ribeiro M, Ferreira LG, Fonseca LRC, Ramprasad R. CdSe/CdTe interface band gaps and band offsets calculated using spin–orbit and self-energy corrections [Internet]. Materials Science and Engineering: B. 2012 ;177( 16 p. 1460–1464 2012):[citado 2024 nov. 07 ] Available from: https://doi.org/10.1016/j.mseb.2011.12.044
Artigo de periodico
Digital magnetic heterostructures based on GaN using GGA-1/2 approach (2012)
Santos, J P T; Marques, M; Pelá, R R; Teles, L. K.; Ferreira, Luiz Guimarães
Source: Applied Physics Letters. Unidade: IF
Subjects: MATERIAIS MAGNÉTICOS, FERROMAGNETISMO, SEMICONDUTORES, FILMES FINOS, NÍQUEL
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ABNT
SANTOS, J P T et al. Digital magnetic heterostructures based on GaN using GGA-1/2 approach. Applied Physics Letters, v. 101, n. 11, p. 112403, 2012Tradução . . Disponível em: https://doi.org/10.1063/1.4751285. Acesso em: 07 nov. 2024.
APA
Santos, J. P. T., Marques, M., Pelá, R. R., Teles, L. K., & Ferreira, L. G. (2012). Digital magnetic heterostructures based on GaN using GGA-1/2 approach. Applied Physics Letters, 101( 11), 112403. doi:10.1063/1.4751285
NLM
Santos JPT, Marques M, Pelá RR, Teles LK, Ferreira LG. Digital magnetic heterostructures based on GaN using GGA-1/2 approach [Internet]. Applied Physics Letters. 2012 ;101( 11): 112403.[citado 2024 nov. 07 ] Available from: https://doi.org/10.1063/1.4751285
Vancouver
Santos JPT, Marques M, Pelá RR, Teles LK, Ferreira LG. Digital magnetic heterostructures based on GaN using GGA-1/2 approach [Internet]. Applied Physics Letters. 2012 ;101( 11): 112403.[citado 2024 nov. 07 ] Available from: https://doi.org/10.1063/1.4751285
Artigo de periodico
GaMnAs: position of Mn-d levels and majority spin band gap predicted from GGA-1/2 calculations (2012)
Pela, R R; Marques, M; Ferreira, Luiz Guimarães; Furthmüller, Jurgen; Teles, L. K.
Source: Applied Physics Letters. Unidade: IF
Subjects: SEMICONDUTORES, SEMICONDUTORES (PROPRIEDADES MAGNÉTICAS)
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ABNT
PELA, R R et al. GaMnAs: position of Mn-d levels and majority spin band gap predicted from GGA-1/2 calculations. Applied Physics Letters, v. 100, n. 20, p. 202408/1-202408/4, 2012Tradução . . Disponível em: https://doi.org/10.1063/1.4718602. Acesso em: 07 nov. 2024.
APA
Pela, R. R., Marques, M., Ferreira, L. G., Furthmüller, J., & Teles, L. K. (2012). GaMnAs: position of Mn-d levels and majority spin band gap predicted from GGA-1/2 calculations. Applied Physics Letters, 100( 20), 202408/1-202408/4. doi:10.1063/1.4718602
NLM
Pela RR, Marques M, Ferreira LG, Furthmüller J, Teles LK. GaMnAs: position of Mn-d levels and majority spin band gap predicted from GGA-1/2 calculations [Internet]. Applied Physics Letters. 2012 ; 100( 20): 202408/1-202408/4.[citado 2024 nov. 07 ] Available from: https://doi.org/10.1063/1.4718602
Vancouver
Pela RR, Marques M, Ferreira LG, Furthmüller J, Teles LK. GaMnAs: position of Mn-d levels and majority spin band gap predicted from GGA-1/2 calculations [Internet]. Applied Physics Letters. 2012 ; 100( 20): 202408/1-202408/4.[citado 2024 nov. 07 ] Available from: https://doi.org/10.1063/1.4718602
Artigo de periodico
Biaxial strain-induced suppression of spinodal decomposition in GaMnAs and GaCrAs (2010)
Caetano, Clóvis; Teles, L. K.; Marques, Marcelo; Ferreira, Luiz Guimarães
Source: Journal of Applied Physics. Unidade: IF
Assunto: SEMICONDUTORES
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ABNT
CAETANO, Clóvis et al. Biaxial strain-induced suppression of spinodal decomposition in GaMnAs and GaCrAs. Journal of Applied Physics, v. 107, n. 12, p. 123904/1-123904/5, 2010Tradução . . Disponível em: https://doi.org/10.1063/1.3448025. Acesso em: 07 nov. 2024.
APA
Caetano, C., Teles, L. K., Marques, M., & Ferreira, L. G. (2010). Biaxial strain-induced suppression of spinodal decomposition in GaMnAs and GaCrAs. Journal of Applied Physics, 107( 12), 123904/1-123904/5. doi:10.1063/1.3448025
NLM
Caetano C, Teles LK, Marques M, Ferreira LG. Biaxial strain-induced suppression of spinodal decomposition in GaMnAs and GaCrAs [Internet]. Journal of Applied Physics. 2010 ; 107( 12): 123904/1-123904/5.[citado 2024 nov. 07 ] Available from: https://doi.org/10.1063/1.3448025
Vancouver
Caetano C, Teles LK, Marques M, Ferreira LG. Biaxial strain-induced suppression of spinodal decomposition in GaMnAs and GaCrAs [Internet]. Journal of Applied Physics. 2010 ; 107( 12): 123904/1-123904/5.[citado 2024 nov. 07 ] Available from: https://doi.org/10.1063/1.3448025
Artigo de periodico
Antiferromagnetism with spin polarization of GaN-based diluted magnetic semiconductors (2010)
Santos, J P T; Gusev, Guennadii Michailovich; Marques, M; Teles, L. K.; Ferreira, Luiz Guimarães
Source: Physical Review B. Unidade: IF
Subjects: SEMICONDUTORES, FERROMAGNETISMO
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ABNT
SANTOS, J P T et al. Antiferromagnetism with spin polarization of GaN-based diluted magnetic semiconductors. Physical Review B, v. 81, n. 8, p. 115209/1-115209/8, 2010Tradução . . Disponível em: https://doi.org/10.1103/physrevb.81.115209. Acesso em: 07 nov. 2024.
APA
Santos, J. P. T., Gusev, G. M., Marques, M., Teles, L. K., & Ferreira, L. G. (2010). Antiferromagnetism with spin polarization of GaN-based diluted magnetic semiconductors. Physical Review B, 81( 8), 115209/1-115209/8. doi:10.1103/physrevb.81.115209
NLM
Santos JPT, Gusev GM, Marques M, Teles LK, Ferreira LG. Antiferromagnetism with spin polarization of GaN-based diluted magnetic semiconductors [Internet]. Physical Review B. 2010 ; 81( 8): 115209/1-115209/8.[citado 2024 nov. 07 ] Available from: https://doi.org/10.1103/physrevb.81.115209
Vancouver
Santos JPT, Gusev GM, Marques M, Teles LK, Ferreira LG. Antiferromagnetism with spin polarization of GaN-based diluted magnetic semiconductors [Internet]. Physical Review B. 2010 ; 81( 8): 115209/1-115209/8.[citado 2024 nov. 07 ] Available from: https://doi.org/10.1103/physrevb.81.115209
Artigo de periodico
Accurate prediction of the `Si/SiO IND.2´ interface band offset using the self-consistent ab initio DFT/LDA-1/2 method (2009)
Ribeiro Junior, Mauro; Fonseca, Leonardo R C; Ferreira, Luiz Guimarães
Source: Physical Review B. Unidade: IF
Assunto: SEMICONDUTORES
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ABNT
RIBEIRO JUNIOR, Mauro e FONSECA, Leonardo R C e FERREIRA, Luiz Guimarães. Accurate prediction of the `Si/SiO IND.2´ interface band offset using the self-consistent ab initio DFT/LDA-1/2 method. Physical Review B, v. 79, n. 24, p. 241312-1/241312-4, 2009Tradução . . Disponível em: http://scitation.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=PRBMDO000079000024241312000001&idtype=cvips&prog=normal. Acesso em: 07 nov. 2024.
APA
Ribeiro Junior, M., Fonseca, L. R. C., & Ferreira, L. G. (2009). Accurate prediction of the `Si/SiO IND.2´ interface band offset using the self-consistent ab initio DFT/LDA-1/2 method. Physical Review B, 79( 24), 241312-1/241312-4. Recuperado de http://scitation.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=PRBMDO000079000024241312000001&idtype=cvips&prog=normal
NLM
Ribeiro Junior M, Fonseca LRC, Ferreira LG. Accurate prediction of the `Si/SiO IND.2´ interface band offset using the self-consistent ab initio DFT/LDA-1/2 method [Internet]. Physical Review B. 2009 ; 79( 24): 241312-1/241312-4.[citado 2024 nov. 07 ] Available from: http://scitation.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=PRBMDO000079000024241312000001&idtype=cvips&prog=normal
Vancouver
Ribeiro Junior M, Fonseca LRC, Ferreira LG. Accurate prediction of the `Si/SiO IND.2´ interface band offset using the self-consistent ab initio DFT/LDA-1/2 method [Internet]. Physical Review B. 2009 ; 79( 24): 241312-1/241312-4.[citado 2024 nov. 07 ] Available from: http://scitation.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=PRBMDO000079000024241312000001&idtype=cvips&prog=normal
Artigo de periodico
Anomalous lattice parameter of magnetic semiconductor alloys (2009)
Caetano, Clovis; Marques, Marcelo; Ferreira, Luiz Guimarães; Teles, L. K.
Source: Applied Physics Letters. Unidade: IF
Assunto: SEMICONDUTORES
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ABNT
CAETANO, Clovis et al. Anomalous lattice parameter of magnetic semiconductor alloys. Applied Physics Letters, v. 94, n. 24, p. 241914/1-241914/3. 2009, 2009Tradução . . Disponível em: https://doi.org/10.1063/1.3154560. Acesso em: 07 nov. 2024.
APA
Caetano, C., Marques, M., Ferreira, L. G., & Teles, L. K. (2009). Anomalous lattice parameter of magnetic semiconductor alloys. Applied Physics Letters, 94( 24), 241914/1-241914/3. 2009. doi:10.1063/1.3154560
NLM
Caetano C, Marques M, Ferreira LG, Teles LK. Anomalous lattice parameter of magnetic semiconductor alloys [Internet]. Applied Physics Letters. 2009 ; 94( 24): 241914/1-241914/3. 2009.[citado 2024 nov. 07 ] Available from: https://doi.org/10.1063/1.3154560
Vancouver
Caetano C, Marques M, Ferreira LG, Teles LK. Anomalous lattice parameter of magnetic semiconductor alloys [Internet]. Applied Physics Letters. 2009 ; 94( 24): 241914/1-241914/3. 2009.[citado 2024 nov. 07 ] Available from: https://doi.org/10.1063/1.3154560
Artigo de periodico
Low-energy electron scattering from methanol and ethanol (2008)
Khakoo, M A; Ferreira, Luiz Guimarães
Source: Physical Review A. Unidade: IF
Subjects: FÍSICA ATÔMICA, FÍSICA MOLECULAR
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ABNT
KHAKOO, M A e FERREIRA, Luiz Guimarães. Low-energy electron scattering from methanol and ethanol. Physical Review A, v. 77, n. 4, p. 042705/1-042705/10, 2008Tradução . . Disponível em: https://doi.org/10.1103/physreva.77.042705. Acesso em: 07 nov. 2024.
APA
Khakoo, M. A., & Ferreira, L. G. (2008). Low-energy electron scattering from methanol and ethanol. Physical Review A, 77( 4), 042705/1-042705/10. doi:10.1103/physreva.77.042705
NLM
Khakoo MA, Ferreira LG. Low-energy electron scattering from methanol and ethanol [Internet]. Physical Review A. 2008 ; 77( 4): 042705/1-042705/10.[citado 2024 nov. 07 ] Available from: https://doi.org/10.1103/physreva.77.042705
Vancouver
Khakoo MA, Ferreira LG. Low-energy electron scattering from methanol and ethanol [Internet]. Physical Review A. 2008 ; 77( 4): 042705/1-042705/10.[citado 2024 nov. 07 ] Available from: https://doi.org/10.1103/physreva.77.042705
Trabalho de evento-anais periodico
Ab initio study of GaN/'Mn IND.x' 'Ga IND.i-x' N digital heterostructure (2007)
Marques, M; Ferreira, Luiz Guimarães; Teles, L. K.; Scolfaro, Luisa Maria Ribeiro; Furthmüller, J; Bechstedt, F
Source: AIP Conference Proceedings. Conference titles: 28th International Conference on the Physics of Semiconductors - ICPS 2006. Unidade: IF
Subjects: SEMICONDUTORES, ESTRUTURA ELETRÔNICA, MAGNETISMO
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ABNT
MARQUES, M et al. Ab initio study of GaN/'Mn IND.x' 'Ga IND.i-x' N digital heterostructure. AIP Conference Proceedings. New York: The Institute. Disponível em: http://scitation.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=APCPCS000893000001001249000001&idtype=cvips&prog=normal. Acesso em: 07 nov. 2024. , 2007
APA
Marques, M., Ferreira, L. G., Teles, L. K., Scolfaro, L. M. R., Furthmüller, J., & Bechstedt, F. (2007). Ab initio study of GaN/'Mn IND.x' 'Ga IND.i-x' N digital heterostructure. AIP Conference Proceedings. New York: The Institute. Recuperado de http://scitation.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=APCPCS000893000001001249000001&idtype=cvips&prog=normal
NLM
Marques M, Ferreira LG, Teles LK, Scolfaro LMR, Furthmüller J, Bechstedt F. Ab initio study of GaN/'Mn IND.x' 'Ga IND.i-x' N digital heterostructure [Internet]. AIP Conference Proceedings. 2007 ; 893 1249-1250.[citado 2024 nov. 07 ] Available from: http://scitation.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=APCPCS000893000001001249000001&idtype=cvips&prog=normal
Vancouver
Marques M, Ferreira LG, Teles LK, Scolfaro LMR, Furthmüller J, Bechstedt F. Ab initio study of GaN/'Mn IND.x' 'Ga IND.i-x' N digital heterostructure [Internet]. AIP Conference Proceedings. 2007 ; 893 1249-1250.[citado 2024 nov. 07 ] Available from: http://scitation.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=APCPCS000893000001001249000001&idtype=cvips&prog=normal
Trabalho de evento-anais periodico
Theoretical study of magnetic properties of VN, CrN, MnN, FeN and CoN under strain (2007)
Ribeiro Junior, M; Marques, M; Scolfaro, Luisa Maria Ribeiro; Teles, L. K.; Ferreira, Luiz Guimarães
Source: AIP Conference Proceedings. Conference titles: 28th International Conference on the Physics of Semiconductors - ICPS 2006. Unidade: IF
Subjects: SEMICONDUTORES, ESTRUTURA ELETRÔNICA, MAGNETISMO, MATERIAIS MAGNÉTICOS
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ABNT
RIBEIRO JUNIOR, M et al. Theoretical study of magnetic properties of VN, CrN, MnN, FeN and CoN under strain. AIP Conference Proceedings. New York: The Institute. Disponível em: http://scitation.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=APCPCS000893000001001227000001&idtype=cvips&prog=normal. Acesso em: 07 nov. 2024. , 2007
APA
Ribeiro Junior, M., Marques, M., Scolfaro, L. M. R., Teles, L. K., & Ferreira, L. G. (2007). Theoretical study of magnetic properties of VN, CrN, MnN, FeN and CoN under strain. AIP Conference Proceedings. New York: The Institute. Recuperado de http://scitation.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=APCPCS000893000001001227000001&idtype=cvips&prog=normal
NLM
Ribeiro Junior M, Marques M, Scolfaro LMR, Teles LK, Ferreira LG. Theoretical study of magnetic properties of VN, CrN, MnN, FeN and CoN under strain [Internet]. AIP Conference Proceedings. 2007 ; 893 1227-1228.[citado 2024 nov. 07 ] Available from: http://scitation.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=APCPCS000893000001001227000001&idtype=cvips&prog=normal
Vancouver
Ribeiro Junior M, Marques M, Scolfaro LMR, Teles LK, Ferreira LG. Theoretical study of magnetic properties of VN, CrN, MnN, FeN and CoN under strain [Internet]. AIP Conference Proceedings. 2007 ; 893 1227-1228.[citado 2024 nov. 07 ] Available from: http://scitation.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=APCPCS000893000001001227000001&idtype=cvips&prog=normal

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