Antiferromagnetism with spin polarization of GaN-based diluted magnetic semiconductors (2010)
- Authors:
- Autor USP: FERREIRA, LUIZ GUIMARAES - IF
- Unidade: IF
- DOI: 10.1103/physrevb.81.115209
- Subjects: SEMICONDUTORES; FERROMAGNETISMO
- Language: Inglês
- Imprenta:
- Source:
- Título: Physical Review B
- ISSN: 1098-0121
- Volume/Número/Paginação/Ano: v. 81, n. 8, p. 115209/1-115209/8, 2010
- Este artigo NÃO possui versão em acesso aberto
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Status: Nenhuma versão em acesso aberto identificada -
ABNT
SANTOS, J P T et al. Antiferromagnetism with spin polarization of GaN-based diluted magnetic semiconductors. Physical Review B, v. 81, n. 8, p. 115209/1-115209/8, 2010Tradução . . Disponível em: https://doi.org/10.1103/physrevb.81.115209. Acesso em: 14 mar. 2026. -
APA
Santos, J. P. T., Gusev, G. M., Marques, M., Teles, L. K., & Ferreira, L. G. (2010). Antiferromagnetism with spin polarization of GaN-based diluted magnetic semiconductors. Physical Review B, 81( 8), 115209/1-115209/8. doi:10.1103/physrevb.81.115209 -
NLM
Santos JPT, Gusev GM, Marques M, Teles LK, Ferreira LG. Antiferromagnetism with spin polarization of GaN-based diluted magnetic semiconductors [Internet]. Physical Review B. 2010 ; 81( 8): 115209/1-115209/8.[citado 2026 mar. 14 ] Available from: https://doi.org/10.1103/physrevb.81.115209 -
Vancouver
Santos JPT, Gusev GM, Marques M, Teles LK, Ferreira LG. Antiferromagnetism with spin polarization of GaN-based diluted magnetic semiconductors [Internet]. Physical Review B. 2010 ; 81( 8): 115209/1-115209/8.[citado 2026 mar. 14 ] Available from: https://doi.org/10.1103/physrevb.81.115209 - Disorder effects of codoped GaN based diluted magnetic semiconductors: antiferromagnetism with spin polarization
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