All-out band structure and band offset ab initio predictions for AlN/GaN and AlP/GaP interfaces (2013)
- Authors:
- Autor USP: FERREIRA, LUIZ GUIMARAES - IF
- Unidade: IF
- DOI: 10.1063/1.4812493
- Subjects: ESPECTROMETRIA; SEMICONDUTORES
- Language: Inglês
- Imprenta:
- Source:
- Título: JOURNAL OF APPLIED PHYSICS
- Volume/Número/Paginação/Ano: v. 114, n. 3, p. 033709 , jul.2013
- Este artigo NÃO possui versão em acesso aberto
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Status: Nenhuma versão em acesso aberto identificada -
ABNT
SILVA FILHO, O. P. et al. All-out band structure and band offset ab initio predictions for AlN/GaN and AlP/GaP interfaces. JOURNAL OF APPLIED PHYSICS, v. 114, n. 3, p. 033709 , 2013Tradução . . Disponível em: https://doi.org/10.1063/1.4812493. Acesso em: 14 mar. 2026. -
APA
Silva Filho, O. P., Ribeiro, M., Pela, R. R., Teles, L. K., Marques, M., & Ferreira, L. G. (2013). All-out band structure and band offset ab initio predictions for AlN/GaN and AlP/GaP interfaces. JOURNAL OF APPLIED PHYSICS, 114( 3), 033709 . doi:10.1063/1.4812493 -
NLM
Silva Filho OP, Ribeiro M, Pela RR, Teles LK, Marques M, Ferreira LG. All-out band structure and band offset ab initio predictions for AlN/GaN and AlP/GaP interfaces [Internet]. JOURNAL OF APPLIED PHYSICS. 2013 ; 114( 3): 033709 .[citado 2026 mar. 14 ] Available from: https://doi.org/10.1063/1.4812493 -
Vancouver
Silva Filho OP, Ribeiro M, Pela RR, Teles LK, Marques M, Ferreira LG. All-out band structure and band offset ab initio predictions for AlN/GaN and AlP/GaP interfaces [Internet]. JOURNAL OF APPLIED PHYSICS. 2013 ; 114( 3): 033709 .[citado 2026 mar. 14 ] Available from: https://doi.org/10.1063/1.4812493 - Disorder effects of codoped GaN based diluted magnetic semiconductors: antiferromagnetism with spin polarization
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