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Trabalho de evento-anais periodico
Effect of ethanol concentrations on few layer Schottky graphene transistors (2013)
Gomez Armas, Luis Enrique ; Gonzalez Huila, Manuel Fernando ; Pojar, Mariana ; Peres, Henrique Estanislau Maldonado ; Fernandes, F. J. R; Valle, Márcio de Almeida; Araki, Koiti ; Toma, Henrique Eisi ; Santos, Antonio Domingues dos; Seabra, Antonio Carlos
Source: Journal of Physics: Conference Series. Conference titles: Ibero-American Congress on Sensors (Ibersensor). Unidades: IQ, IF, EP
Subjects: NANOTECNOLOGIA, ETANOL
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
GOMEZ ARMAS, Luis Enrique et al. Effect of ethanol concentrations on few layer Schottky graphene transistors. Journal of Physics: Conference Series. Bristol: Instituto de Química, Universidade de São Paulo. Disponível em: https://doi.org/10.1088/1742-6596/421/1/012005. Acesso em: 18 nov. 2024. , 2013
APA
Gomez Armas, L. E., Gonzalez Huila, M. F., Pojar, M., Peres, H. E. M., Fernandes, F. J. R., Valle, M. de A., et al. (2013). Effect of ethanol concentrations on few layer Schottky graphene transistors. Journal of Physics: Conference Series. Bristol: Instituto de Química, Universidade de São Paulo. doi:10.1088/1742-6596/421/1/012005
NLM
Gomez Armas LE, Gonzalez Huila MF, Pojar M, Peres HEM, Fernandes FJR, Valle M de A, Araki K, Toma HE, Santos AD dos, Seabra AC. Effect of ethanol concentrations on few layer Schottky graphene transistors [Internet]. Journal of Physics: Conference Series. 2013 ; 421 art. 012005 1-5.[citado 2024 nov. 18 ] Available from: https://doi.org/10.1088/1742-6596/421/1/012005
Vancouver
Gomez Armas LE, Gonzalez Huila MF, Pojar M, Peres HEM, Fernandes FJR, Valle M de A, Araki K, Toma HE, Santos AD dos, Seabra AC. Effect of ethanol concentrations on few layer Schottky graphene transistors [Internet]. Journal of Physics: Conference Series. 2013 ; 421 art. 012005 1-5.[citado 2024 nov. 18 ] Available from: https://doi.org/10.1088/1742-6596/421/1/012005
Trabalho de evento-resumo
Effect of gate voltage in few layer schottky graphene transistors at the presence of different ethanol concentrations (2012)
Gomez Armas, Luis Enrique ; Gonzalez Huila, Manuel Fernando ; Pojar, Mariana ; Peres, Henrique Estanislau Maldonado ; Ramírez Fernandez, Francisco Javier ; Valle, Márcio de Almeida; Araki, Koiti ; Toma, Henrique Eisi ; Santos, Antonio Domingues dos; Seabra, Antonio Carlos
Source: Anais. Conference titles: Brazilian MRS Meeting. Unidades: EP, IQ, IF
Assunto: NANOTECNOLOGIA
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ABNT
GOMEZ ARMAS, Luis Enrique et al. Effect of gate voltage in few layer schottky graphene transistors at the presence of different ethanol concentrations. 2012, Anais.. Rio de Janeiro: Sociedade Brasileira de Pesquisa em Materiais (SBPMat), 2012. . Acesso em: 18 nov. 2024.
APA
Gomez Armas, L. E., Gonzalez Huila, M. F., Pojar, M., Peres, H. E. M., Ramírez Fernandez, F. J., Valle, M. de A., et al. (2012). Effect of gate voltage in few layer schottky graphene transistors at the presence of different ethanol concentrations. In Anais. Rio de Janeiro: Sociedade Brasileira de Pesquisa em Materiais (SBPMat).
NLM
Gomez Armas LE, Gonzalez Huila MF, Pojar M, Peres HEM, Ramírez Fernandez FJ, Valle M de A, Araki K, Toma HE, Santos AD dos, Seabra AC. Effect of gate voltage in few layer schottky graphene transistors at the presence of different ethanol concentrations. Anais. 2012 ;[citado 2024 nov. 18 ]
Vancouver
Gomez Armas LE, Gonzalez Huila MF, Pojar M, Peres HEM, Ramírez Fernandez FJ, Valle M de A, Araki K, Toma HE, Santos AD dos, Seabra AC. Effect of gate voltage in few layer schottky graphene transistors at the presence of different ethanol concentrations. Anais. 2012 ;[citado 2024 nov. 18 ]
Trabalho de evento-anais periodico
Doped tin oxide nanometric films for environment monitoring (2005)
Hidalgo Falla, Maria del Pilar ; Peres, Henrique Estanislau Maldonado ; Gouvêa, Douglas ; Ramírez Fernandez, Francisco Javier
Source: Materials Science Forum. Conference titles: International Latin-American Conference on Powder Technology. Unidade: EP
Assunto: NANOTECNOLOGIA
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
HIDALGO FALLA, Maria del Pilar et al. Doped tin oxide nanometric films for environment monitoring. Materials Science Forum. Switzerland: Trans Tech Publications. Disponível em: https://doi.org/10.4028/www.scientific.net/MSF.498-499.636. Acesso em: 18 nov. 2024. , 2005
APA
Hidalgo Falla, M. del P., Peres, H. E. M., Gouvêa, D., & Ramírez Fernandez, F. J. (2005). Doped tin oxide nanometric films for environment monitoring. Materials Science Forum. Switzerland: Trans Tech Publications. doi:10.4028/www.scientific.net/MSF.498-499.636
NLM
Hidalgo Falla M del P, Peres HEM, Gouvêa D, Ramírez Fernandez FJ. Doped tin oxide nanometric films for environment monitoring [Internet]. Materials Science Forum. 2005 ; 489-499 636-641.[citado 2024 nov. 18 ] Available from: https://doi.org/10.4028/www.scientific.net/MSF.498-499.636
Vancouver
Hidalgo Falla M del P, Peres HEM, Gouvêa D, Ramírez Fernandez FJ. Doped tin oxide nanometric films for environment monitoring [Internet]. Materials Science Forum. 2005 ; 489-499 636-641.[citado 2024 nov. 18 ] Available from: https://doi.org/10.4028/www.scientific.net/MSF.498-499.636
Trabalho de evento
Integrated sensors and microsystems (2004)
Ramírez Fernandez, Francisco Javier ; Salcedo, Walter Jaimes ; Galeazzo, Elisabete ; Peres, Henrique Estanislau Maldonado
Source: NanoSemiMat-3.. Conference titles: Workshop on Semiconductor Nanodevices and Nanostructured Materials. Unidade: EP
Assunto: NANOTECNOLOGIA
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ABNT
RAMÍREZ FERNANDEZ, Francisco Javier et al. Integrated sensors and microsystems. 2004, Anais.. Brasília: MCT, 2004. . Acesso em: 18 nov. 2024.
APA
Ramírez Fernandez, F. J., Salcedo, W. J., Galeazzo, E., & Peres, H. E. M. (2004). Integrated sensors and microsystems. In NanoSemiMat-3.. Brasília: MCT.
NLM
Ramírez Fernandez FJ, Salcedo WJ, Galeazzo E, Peres HEM. Integrated sensors and microsystems. NanoSemiMat-3. 2004 ;[citado 2024 nov. 18 ]
Vancouver
Ramírez Fernandez FJ, Salcedo WJ, Galeazzo E, Peres HEM. Integrated sensors and microsystems. NanoSemiMat-3. 2004 ;[citado 2024 nov. 18 ]
Trabalho de evento
Porous silicon for gas sensor applications (2004)
Galeazzo, Elisabete ; Peres, Henrique Estanislau Maldonado ; Ramírez Fernandez, Francisco Javier
Source: NanoSemiMat-3.. Conference titles: Workshop on Semiconductor Nanodevices and Nanostructured Materials. Unidade: EP
Assunto: NANOTECNOLOGIA
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
GALEAZZO, Elisabete e PERES, Henrique Estanislau Maldonado e RAMÍREZ FERNANDEZ, Francisco Javier. Porous silicon for gas sensor applications. 2004, Anais.. Brasília: MCT, 2004. . Acesso em: 18 nov. 2024.
APA
Galeazzo, E., Peres, H. E. M., & Ramírez Fernandez, F. J. (2004). Porous silicon for gas sensor applications. In NanoSemiMat-3.. Brasília: MCT.
NLM
Galeazzo E, Peres HEM, Ramírez Fernandez FJ. Porous silicon for gas sensor applications. NanoSemiMat-3. 2004 ;[citado 2024 nov. 18 ]
Vancouver
Galeazzo E, Peres HEM, Ramírez Fernandez FJ. Porous silicon for gas sensor applications. NanoSemiMat-3. 2004 ;[citado 2024 nov. 18 ]
Artigo de periodico
Silicon micromechanical structures fabricated by electrochemical process (2003)
Dantas, Michel Oliveira da Silva; Galeazzo, Elisabete ; Peres, Henrique Estanislau Maldonado ; Ramírez Fernandez, Francisco Javier
Source: IEEE Sensors Journal,. Unidade: EP
Subjects: NANOTECNOLOGIA, MICROELETRÔNICA
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
DANTAS, Michel Oliveira da Silva et al. Silicon micromechanical structures fabricated by electrochemical process. IEEE Sensors Journal, v. 3, n. 6, 2003Tradução . . Disponível em: https://doi.org/10.1109/icsens.2002.1037163. Acesso em: 18 nov. 2024.
APA
Dantas, M. O. da S., Galeazzo, E., Peres, H. E. M., & Ramírez Fernandez, F. J. (2003). Silicon micromechanical structures fabricated by electrochemical process. IEEE Sensors Journal,, 3( 6). doi:10.1109/icsens.2002.1037163
NLM
Dantas MO da S, Galeazzo E, Peres HEM, Ramírez Fernandez FJ. Silicon micromechanical structures fabricated by electrochemical process [Internet]. IEEE Sensors Journal,. 2003 ; 3( 6):[citado 2024 nov. 18 ] Available from: https://doi.org/10.1109/icsens.2002.1037163
Vancouver
Dantas MO da S, Galeazzo E, Peres HEM, Ramírez Fernandez FJ. Silicon micromechanical structures fabricated by electrochemical process [Internet]. IEEE Sensors Journal,. 2003 ; 3( 6):[citado 2024 nov. 18 ] Available from: https://doi.org/10.1109/icsens.2002.1037163

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