Effect of gate voltage in few layer schottky graphene transistors at the presence of different ethanol concentrations (2012)
- Authors:
- USP affiliated authors: PERES, HENRIQUE ESTANISLAU MALDONADO - EP ; FERNANDEZ, FRANCISCO JAVIER RAMIREZ - EP ; VALLE, MARCIO DE ALMEIDA - EP ; ARAKI, KOITI - IQ ; TOMA, HENRIQUE EISI - IQ ; SANTOS, ANTONIO DOMINGUES DOS - IF ; SEABRA, ANTONIO CARLOS - EP
- Unidades: EP; IQ; IF
- Assunto: NANOTECNOLOGIA
- Language: Inglês
- Imprenta:
- Publisher: Sociedade Brasileira de Pesquisa em Materiais (SBPMat)
- Publisher place: Rio de Janeiro
- Date published: 2012
- Source:
- Título do periódico: Anais
- Conference titles: Brazilian MRS Meeting
-
ABNT
GOMEZ ARMAS, Luis Enrique et al. Effect of gate voltage in few layer schottky graphene transistors at the presence of different ethanol concentrations. 2012, Anais.. Rio de Janeiro: Sociedade Brasileira de Pesquisa em Materiais (SBPMat), 2012. . Acesso em: 19 abr. 2024. -
APA
Gomez Armas, L. E., Gonzalez Huila, M. F., Pojar, M., Peres, H. E. M., Ramírez Fernandez, F. J., Valle, M. de A., et al. (2012). Effect of gate voltage in few layer schottky graphene transistors at the presence of different ethanol concentrations. In Anais. Rio de Janeiro: Sociedade Brasileira de Pesquisa em Materiais (SBPMat). -
NLM
Gomez Armas LE, Gonzalez Huila MF, Pojar M, Peres HEM, Ramírez Fernandez FJ, Valle M de A, Araki K, Toma HE, Santos AD dos, Seabra AC. Effect of gate voltage in few layer schottky graphene transistors at the presence of different ethanol concentrations. Anais. 2012 ;[citado 2024 abr. 19 ] -
Vancouver
Gomez Armas LE, Gonzalez Huila MF, Pojar M, Peres HEM, Ramírez Fernandez FJ, Valle M de A, Araki K, Toma HE, Santos AD dos, Seabra AC. Effect of gate voltage in few layer schottky graphene transistors at the presence of different ethanol concentrations. Anais. 2012 ;[citado 2024 abr. 19 ] - Effect of ethanol concentrations on few layer Schottky graphene transistors
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