Effect of gate voltage in few layer schottky graphene transistors at the presence of different ethanol concentrations (2012)
- Autores:
- Autores USP: PERES, HENRIQUE ESTANISLAU MALDONADO - EP ; FERNANDEZ, FRANCISCO JAVIER RAMIREZ - EP ; VALLE, MARCIO DE ALMEIDA - EP ; ARAKI, KOITI - IQ ; TOMA, HENRIQUE EISI - IQ ; SANTOS, ANTONIO DOMINGUES DOS - IF ; SEABRA, ANTONIO CARLOS - EP
- Unidades: EP; IQ; IF
- Assunto: NANOTECNOLOGIA
- Idioma: Inglês
- Imprenta:
- Editora: Sociedade Brasileira de Pesquisa em Materiais (SBPMat)
- Local: Rio de Janeiro
- Data de publicação: 2012
- Fonte:
- Título do periódico: Anais
- Nome do evento: Brazilian MRS Meeting
-
ABNT
GOMEZ ARMAS, Luis Enrique et al. Effect of gate voltage in few layer schottky graphene transistors at the presence of different ethanol concentrations. 2012, Anais.. Rio de Janeiro: Sociedade Brasileira de Pesquisa em Materiais (SBPMat), 2012. . Acesso em: 18 set. 2024. -
APA
Gomez Armas, L. E., Gonzalez Huila, M. F., Pojar, M., Peres, H. E. M., Ramírez Fernandez, F. J., Valle, M. de A., et al. (2012). Effect of gate voltage in few layer schottky graphene transistors at the presence of different ethanol concentrations. In Anais. Rio de Janeiro: Sociedade Brasileira de Pesquisa em Materiais (SBPMat). -
NLM
Gomez Armas LE, Gonzalez Huila MF, Pojar M, Peres HEM, Ramírez Fernandez FJ, Valle M de A, Araki K, Toma HE, Santos AD dos, Seabra AC. Effect of gate voltage in few layer schottky graphene transistors at the presence of different ethanol concentrations. Anais. 2012 ;[citado 2024 set. 18 ] -
Vancouver
Gomez Armas LE, Gonzalez Huila MF, Pojar M, Peres HEM, Ramírez Fernandez FJ, Valle M de A, Araki K, Toma HE, Santos AD dos, Seabra AC. Effect of gate voltage in few layer schottky graphene transistors at the presence of different ethanol concentrations. Anais. 2012 ;[citado 2024 set. 18 ] - Effect of ethanol concentrations on few layer Schottky graphene transistors
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