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  • Source: Radiation Physics and Chemistry. Unidades: IF, IPEN

    Subjects: FOTODETECTORES, SEMICONDUTORES, DIODOS, ESPECTROSCOPIA DE RAIO GAMA, ESPECTROSCOPIA DE RAIO X, SILÍCIO

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    • ABNT

      MALAFRONTE, A. A. et al. A low-cost small-size commercial PIN photodiode: I. Electrical characterisation and low-energy photon spectrometry. Radiation Physics and Chemistry, v. 179, 2021Tradução . . Disponível em: https://doi.org/10.1016/j.radphyschem.2020.109103. Acesso em: 02 nov. 2024.
    • APA

      Malafronte, A. A., Petri, A. R., Gonçalves, J. A. C., Barros, S., Bueno, C., Maidana, N. L., et al. (2021). A low-cost small-size commercial PIN photodiode: I. Electrical characterisation and low-energy photon spectrometry. Radiation Physics and Chemistry, 179. doi:10.1016/j.radphyschem.2020.109103
    • NLM

      Malafronte AA, Petri AR, Gonçalves JAC, Barros S, Bueno C, Maidana NL, Mangiarotti A, Martins M, Quivy AA, Vanin V. A low-cost small-size commercial PIN photodiode: I. Electrical characterisation and low-energy photon spectrometry [Internet]. Radiation Physics and Chemistry. 2021 ; 179[citado 2024 nov. 02 ] Available from: https://doi.org/10.1016/j.radphyschem.2020.109103
    • Vancouver

      Malafronte AA, Petri AR, Gonçalves JAC, Barros S, Bueno C, Maidana NL, Mangiarotti A, Martins M, Quivy AA, Vanin V. A low-cost small-size commercial PIN photodiode: I. Electrical characterisation and low-energy photon spectrometry [Internet]. Radiation Physics and Chemistry. 2021 ; 179[citado 2024 nov. 02 ] Available from: https://doi.org/10.1016/j.radphyschem.2020.109103
  • Source: Radiation Physics and Chemistry. Unidades: IF, IPEN

    Subjects: FÍSICA DE PARTÍCULAS, FOTODETECTORES, SEMICONDUTORES (FÍSICO-QUÍMICA), DIODOS, SILÍCIO, SIMULAÇÃO (ESTATÍSTICA)

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    • ABNT

      MANGIAROTTI, A. et al. A low-cost small-size commercial PIN photodiode: II. Comparison of measurements with monoenergetic electrons to analytical expressions and Monte Carlo simulations. Radiation Physics and Chemistry, v. 182, 2021Tradução . . Disponível em: https://doi.org/10.1016/j.radphyschem.2020.109102. Acesso em: 02 nov. 2024.
    • APA

      Mangiarotti, A., Petri, A. R., Malafronte, A. A., Gonçalves, J. A. C., Barros, S., Bueno, C., et al. (2021). A low-cost small-size commercial PIN photodiode: II. Comparison of measurements with monoenergetic electrons to analytical expressions and Monte Carlo simulations. Radiation Physics and Chemistry, 182. doi:10.1016/j.radphyschem.2020.109102
    • NLM

      Mangiarotti A, Petri AR, Malafronte AA, Gonçalves JAC, Barros S, Bueno C, Fernández-Varea JM, Maidana NL, Martins M, Vanin V. A low-cost small-size commercial PIN photodiode: II. Comparison of measurements with monoenergetic electrons to analytical expressions and Monte Carlo simulations [Internet]. Radiation Physics and Chemistry. 2021 ; 182[citado 2024 nov. 02 ] Available from: https://doi.org/10.1016/j.radphyschem.2020.109102
    • Vancouver

      Mangiarotti A, Petri AR, Malafronte AA, Gonçalves JAC, Barros S, Bueno C, Fernández-Varea JM, Maidana NL, Martins M, Vanin V. A low-cost small-size commercial PIN photodiode: II. Comparison of measurements with monoenergetic electrons to analytical expressions and Monte Carlo simulations [Internet]. Radiation Physics and Chemistry. 2021 ; 182[citado 2024 nov. 02 ] Available from: https://doi.org/10.1016/j.radphyschem.2020.109102
  • Source: JOURNAL OF APPLIED PHYSICS. Unidade: IF

    Subjects: FOTODETECTORES, ÁTOMOS

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    • ABNT

      MAIA, Álvaro Diego Bernardino et al. Simulation of the electronic properties of 'IN' IND. x''GA' IND. 1−x' 'AS' quantum dots and their wetting layer under the influence of indium segregation. JOURNAL OF APPLIED PHYSICS, v. 114, n. 8, p. 083708, 2013Tradução . . Disponível em: https://repositorio.usp.br/directbitstream/431f6fc1-75d5-4f3e-b13e-0af926fa3796/1.4818610.pdf. Acesso em: 02 nov. 2024.
    • APA

      Maia, Á. D. B., Aquino, V. M. de, Dias, I. F. L., Silva, E. C. F. da, Quivy, A. A., & Bindilatti, V. (2013). Simulation of the electronic properties of 'IN' IND. x''GA' IND. 1−x' 'AS' quantum dots and their wetting layer under the influence of indium segregation. JOURNAL OF APPLIED PHYSICS, 114( 8), 083708. Recuperado de https://repositorio.usp.br/directbitstream/431f6fc1-75d5-4f3e-b13e-0af926fa3796/1.4818610.pdf
    • NLM

      Maia ÁDB, Aquino VM de, Dias IFL, Silva ECF da, Quivy AA, Bindilatti V. Simulation of the electronic properties of 'IN' IND. x''GA' IND. 1−x' 'AS' quantum dots and their wetting layer under the influence of indium segregation [Internet]. JOURNAL OF APPLIED PHYSICS. 2013 ; 114( 8): 083708.[citado 2024 nov. 02 ] Available from: https://repositorio.usp.br/directbitstream/431f6fc1-75d5-4f3e-b13e-0af926fa3796/1.4818610.pdf
    • Vancouver

      Maia ÁDB, Aquino VM de, Dias IFL, Silva ECF da, Quivy AA, Bindilatti V. Simulation of the electronic properties of 'IN' IND. x''GA' IND. 1−x' 'AS' quantum dots and their wetting layer under the influence of indium segregation [Internet]. JOURNAL OF APPLIED PHYSICS. 2013 ; 114( 8): 083708.[citado 2024 nov. 02 ] Available from: https://repositorio.usp.br/directbitstream/431f6fc1-75d5-4f3e-b13e-0af926fa3796/1.4818610.pdf
  • Source: Resumo. Conference titles: Brazilian Workshop on Semiconductor Physics. Unidade: IF

    Assunto: FOTODETECTORES

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    • ABNT

      MAIA, Alvaro Diego Bernardino et al. Growth, processing and testing of infrared photodetectors based on quantum dots. 2011, Anais.. Juiz de Fora: UFJF, 2011. Disponível em: http://www.sbf1.sbfisica.org.br/eventos/extras/bwsp15/sys/resumos/R0025-1.pdf. Acesso em: 02 nov. 2024.
    • APA

      Maia, A. D. B., Fernandes, F. M., Ferreira, D. T., Silva, E. C. F. da, & Quivy, A. A. (2011). Growth, processing and testing of infrared photodetectors based on quantum dots. In Resumo. Juiz de Fora: UFJF. Recuperado de http://www.sbf1.sbfisica.org.br/eventos/extras/bwsp15/sys/resumos/R0025-1.pdf
    • NLM

      Maia ADB, Fernandes FM, Ferreira DT, Silva ECF da, Quivy AA. Growth, processing and testing of infrared photodetectors based on quantum dots [Internet]. Resumo. 2011 ;[citado 2024 nov. 02 ] Available from: http://www.sbf1.sbfisica.org.br/eventos/extras/bwsp15/sys/resumos/R0025-1.pdf
    • Vancouver

      Maia ADB, Fernandes FM, Ferreira DT, Silva ECF da, Quivy AA. Growth, processing and testing of infrared photodetectors based on quantum dots [Internet]. Resumo. 2011 ;[citado 2024 nov. 02 ] Available from: http://www.sbf1.sbfisica.org.br/eventos/extras/bwsp15/sys/resumos/R0025-1.pdf
  • Source: Resumo. Conference titles: Brazilian Workshop on Semiconductor Physics. Unidade: IF

    Assunto: FOTODETECTORES

    Acesso à fonteHow to cite
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    • ABNT

      MAIA, Alvaro Diego Bernardino et al. Calculation of the electron energy levels of InAs/GaAs quantum dots for application in infrared photodetectors. 2011, Anais.. Juiz de Fora: UFJF, 2011. Disponível em: http://www.sbf1.sbfisica.org.br/eventos/extras/bwsp15/sys/resumos/R0025-2.pdf. Acesso em: 02 nov. 2024.
    • APA

      Maia, A. D. B., Fernandes, F. M., Silva, E. C. F. da, & Quivy, A. A. (2011). Calculation of the electron energy levels of InAs/GaAs quantum dots for application in infrared photodetectors. In Resumo. Juiz de Fora: UFJF. Recuperado de http://www.sbf1.sbfisica.org.br/eventos/extras/bwsp15/sys/resumos/R0025-2.pdf
    • NLM

      Maia ADB, Fernandes FM, Silva ECF da, Quivy AA. Calculation of the electron energy levels of InAs/GaAs quantum dots for application in infrared photodetectors [Internet]. Resumo. 2011 ;[citado 2024 nov. 02 ] Available from: http://www.sbf1.sbfisica.org.br/eventos/extras/bwsp15/sys/resumos/R0025-2.pdf
    • Vancouver

      Maia ADB, Fernandes FM, Silva ECF da, Quivy AA. Calculation of the electron energy levels of InAs/GaAs quantum dots for application in infrared photodetectors [Internet]. Resumo. 2011 ;[citado 2024 nov. 02 ] Available from: http://www.sbf1.sbfisica.org.br/eventos/extras/bwsp15/sys/resumos/R0025-2.pdf
  • Source: Resumo. Conference titles: Brazilian Workshop on Semiconductor Physics. Unidade: IF

    Assunto: FOTODETECTORES

    Acesso à fonteHow to cite
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    • ABNT

      FERNANDES, F M et al. High-efficiency infrared photodetectors based on quantum wells grown by molecular-beam epitaxy. 2011, Anais.. Juiz de Fora: UFJF, 2011. Disponível em: http://www.sbf1.sbfisica.org.br/eventos/extras/bwsp15/sys/resumos/R0026-1.pdf. Acesso em: 02 nov. 2024.
    • APA

      Fernandes, F. M., Maia, A. D. B., Ferreira, D. T., Silva, E. C. F. da, & Quivy, A. A. (2011). High-efficiency infrared photodetectors based on quantum wells grown by molecular-beam epitaxy. In Resumo. Juiz de Fora: UFJF. Recuperado de http://www.sbf1.sbfisica.org.br/eventos/extras/bwsp15/sys/resumos/R0026-1.pdf
    • NLM

      Fernandes FM, Maia ADB, Ferreira DT, Silva ECF da, Quivy AA. High-efficiency infrared photodetectors based on quantum wells grown by molecular-beam epitaxy [Internet]. Resumo. 2011 ;[citado 2024 nov. 02 ] Available from: http://www.sbf1.sbfisica.org.br/eventos/extras/bwsp15/sys/resumos/R0026-1.pdf
    • Vancouver

      Fernandes FM, Maia ADB, Ferreira DT, Silva ECF da, Quivy AA. High-efficiency infrared photodetectors based on quantum wells grown by molecular-beam epitaxy [Internet]. Resumo. 2011 ;[citado 2024 nov. 02 ] Available from: http://www.sbf1.sbfisica.org.br/eventos/extras/bwsp15/sys/resumos/R0026-1.pdf

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