Filtros : "IFSC031" "Inglaterra" Removido: "2003" Limpar

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  • Source: Solid State Communications. Unidade: IFSC

    Subjects: ÓPTICA (PROPRIEDADES), FILMES FINOS, EMISSÃO DA LUZ, LUMINESCÊNCIA

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      GALLO, I. B. e ZANATTA, Antonio Ricardo. Structural-electronic aspects related to the near-infrared light emission of Fe-doped silicon films. Solid State Communications, v. 151, n. 8, p. 587-590, 2011Tradução . . Disponível em: https://doi.org/10.1016/j.ssc.2011.02.012. Acesso em: 19 nov. 2024.
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      Gallo, I. B., & Zanatta, A. R. (2011). Structural-electronic aspects related to the near-infrared light emission of Fe-doped silicon films. Solid State Communications, 151( 8), 587-590. doi:10.1016/j.ssc.2011.02.012
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      Gallo IB, Zanatta AR. Structural-electronic aspects related to the near-infrared light emission of Fe-doped silicon films [Internet]. Solid State Communications. 2011 ; 151( 8): 587-590.[citado 2024 nov. 19 ] Available from: https://doi.org/10.1016/j.ssc.2011.02.012
    • Vancouver

      Gallo IB, Zanatta AR. Structural-electronic aspects related to the near-infrared light emission of Fe-doped silicon films [Internet]. Solid State Communications. 2011 ; 151( 8): 587-590.[citado 2024 nov. 19 ] Available from: https://doi.org/10.1016/j.ssc.2011.02.012
  • Source: Journal of Physics D. Unidade: IFSC

    Subjects: FILMES FINOS, CROMO, ÓPTICA (PROPRIEDADES), TRATAMENTO TÉRMICO, RUBI

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      COSSOLINO, L. C. e ZANATTA, Antonio Ricardo. Influence of chromium concentration on the optical-electronic properties of ruby microstructures. Journal of Physics D, v. 43, p. 015302-1-015302-9, 2010Tradução . . Disponível em: https://doi.org/10.1088/0022-3727/43/1/015302. Acesso em: 19 nov. 2024.
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      Cossolino, L. C., & Zanatta, A. R. (2010). Influence of chromium concentration on the optical-electronic properties of ruby microstructures. Journal of Physics D, 43, 015302-1-015302-9. doi:10.1088/0022-3727/43/1/015302
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      Cossolino LC, Zanatta AR. Influence of chromium concentration on the optical-electronic properties of ruby microstructures [Internet]. Journal of Physics D. 2010 ; 43 015302-1-015302-9.[citado 2024 nov. 19 ] Available from: https://doi.org/10.1088/0022-3727/43/1/015302
    • Vancouver

      Cossolino LC, Zanatta AR. Influence of chromium concentration on the optical-electronic properties of ruby microstructures [Internet]. Journal of Physics D. 2010 ; 43 015302-1-015302-9.[citado 2024 nov. 19 ] Available from: https://doi.org/10.1088/0022-3727/43/1/015302
  • Source: Journal of Physics D. Unidade: IFSC

    Subjects: FILMES FINOS (PREPARO), FOTOLUMINESCÊNCIA, ALUMÍNIO, ENERGIA, ESPECTROSCOPIA, TEMPERATURA AMBIENTE

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      ZANATTA, Antonio Ricardo. Effect of thermal annealing treatments on the optical properties of rare-earth-doped AIN films. Journal of Physics D, v. 42, n. Ja 2009, p. 025109-1-025109-7, 2009Tradução . . Disponível em: https://doi.org/10.1088/0022-3727/42/2/025109. Acesso em: 19 nov. 2024.
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      Zanatta, A. R. (2009). Effect of thermal annealing treatments on the optical properties of rare-earth-doped AIN films. Journal of Physics D, 42( Ja 2009), 025109-1-025109-7. doi:10.1088/0022-3727/42/2/025109
    • NLM

      Zanatta AR. Effect of thermal annealing treatments on the optical properties of rare-earth-doped AIN films [Internet]. Journal of Physics D. 2009 ; 42( Ja 2009): 025109-1-025109-7.[citado 2024 nov. 19 ] Available from: https://doi.org/10.1088/0022-3727/42/2/025109
    • Vancouver

      Zanatta AR. Effect of thermal annealing treatments on the optical properties of rare-earth-doped AIN films [Internet]. Journal of Physics D. 2009 ; 42( Ja 2009): 025109-1-025109-7.[citado 2024 nov. 19 ] Available from: https://doi.org/10.1088/0022-3727/42/2/025109
  • Source: Journal of Physics D. Unidade: IFSC

    Subjects: FERROMAGNETISMO, SEMICONDUTORES, FILMES FINOS

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      FERRI, F. A. e ZANATTA, Antonio Ricardo. Structural, optical and morphological characterization of amorphous 'Ge IND.100-x''Mn IND.x' films deposited by sputtering. Journal of Physics D, v. 42, n. 3, p. 035005-1-035005-6, 2009Tradução . . Acesso em: 19 nov. 2024.
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      Ferri, F. A., & Zanatta, A. R. (2009). Structural, optical and morphological characterization of amorphous 'Ge IND.100-x''Mn IND.x' films deposited by sputtering. Journal of Physics D, 42( 3), 035005-1-035005-6.
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      Ferri FA, Zanatta AR. Structural, optical and morphological characterization of amorphous 'Ge IND.100-x''Mn IND.x' films deposited by sputtering. Journal of Physics D. 2009 ; 42( 3): 035005-1-035005-6.[citado 2024 nov. 19 ]
    • Vancouver

      Ferri FA, Zanatta AR. Structural, optical and morphological characterization of amorphous 'Ge IND.100-x''Mn IND.x' films deposited by sputtering. Journal of Physics D. 2009 ; 42( 3): 035005-1-035005-6.[citado 2024 nov. 19 ]
  • Source: Journal of Physics: Condensed Matter. Unidade: IFSC

    Subjects: ESPALHAMENTO, SEMICONDUTORES, MANGANÊS, FILMES FINOS

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      SILVA, J. H. Dias da e LEITE, D. M. G. e ZANATTA, Antonio Ricardo. Resonant excitation of Mn local vibrational modes in the higher order Raman spectra of nanocrystalline 'Ga IND.1-x''Mn IND.x'N films. Journal of Physics: Condensed Matter, v. 20, n. 25, p. 252201-1-252201-5, 2008Tradução . . Disponível em: https://doi.org/10.1088/0953-8984/20/25/252201. Acesso em: 19 nov. 2024.
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      Silva, J. H. D. da, Leite, D. M. G., & Zanatta, A. R. (2008). Resonant excitation of Mn local vibrational modes in the higher order Raman spectra of nanocrystalline 'Ga IND.1-x''Mn IND.x'N films. Journal of Physics: Condensed Matter, 20( 25), 252201-1-252201-5. doi:10.1088/0953-8984/20/25/252201
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      Silva JHD da, Leite DMG, Zanatta AR. Resonant excitation of Mn local vibrational modes in the higher order Raman spectra of nanocrystalline 'Ga IND.1-x''Mn IND.x'N films [Internet]. Journal of Physics: Condensed Matter. 2008 ; 20( 25): 252201-1-252201-5.[citado 2024 nov. 19 ] Available from: https://doi.org/10.1088/0953-8984/20/25/252201
    • Vancouver

      Silva JHD da, Leite DMG, Zanatta AR. Resonant excitation of Mn local vibrational modes in the higher order Raman spectra of nanocrystalline 'Ga IND.1-x''Mn IND.x'N films [Internet]. Journal of Physics: Condensed Matter. 2008 ; 20( 25): 252201-1-252201-5.[citado 2024 nov. 19 ] Available from: https://doi.org/10.1088/0953-8984/20/25/252201
  • Source: Journal of Physics: Condensed Matter. Unidade: IFSC

    Subjects: ALUMÍNIO, TEMPERATURA, ESPECTROSCOPIA RAMAN, CRISTALIZAÇÃO, CRISTALOGRAFIA FÍSICA

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      MUNIZ, L. R. et al. Aluminium-induced nanocrystalline Ge formation at low temperatures. Journal of Physics: Condensed Matter, v. 19, n. 7, p. 076206-1-076206-16, 2007Tradução . . Disponível em: https://doi.org/10.1088/0953-8984/19/7/076206. Acesso em: 19 nov. 2024.
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      Muniz, L. R., Ribeiro, C. T. M., Zanatta, A. R., & Chambouleyron, I. (2007). Aluminium-induced nanocrystalline Ge formation at low temperatures. Journal of Physics: Condensed Matter, 19( 7), 076206-1-076206-16. doi:10.1088/0953-8984/19/7/076206
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      Muniz LR, Ribeiro CTM, Zanatta AR, Chambouleyron I. Aluminium-induced nanocrystalline Ge formation at low temperatures [Internet]. Journal of Physics: Condensed Matter. 2007 ; 19( 7): 076206-1-076206-16.[citado 2024 nov. 19 ] Available from: https://doi.org/10.1088/0953-8984/19/7/076206
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      Muniz LR, Ribeiro CTM, Zanatta AR, Chambouleyron I. Aluminium-induced nanocrystalline Ge formation at low temperatures [Internet]. Journal of Physics: Condensed Matter. 2007 ; 19( 7): 076206-1-076206-16.[citado 2024 nov. 19 ] Available from: https://doi.org/10.1088/0953-8984/19/7/076206
  • Source: Journal of Physics: Condensed Matter. Unidade: IFSC

    Subjects: ENERGIA, FILMES FINOS, SILICONE

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      ZANATTA, Antonio Ricardo e KHAN, A. e KORDESCH, M. E. Red-green-blue light emission and energy transfer processes in amorphous SiN films doped with Sm and Tb. Journal of Physics: Condensed Matter, v. 19, n. 43, p. 436230-1-436230-8, 2007Tradução . . Disponível em: https://doi.org/10.1088/0953-8984/19/43/436230. Acesso em: 19 nov. 2024.
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      Zanatta, A. R., Khan, A., & Kordesch, M. E. (2007). Red-green-blue light emission and energy transfer processes in amorphous SiN films doped with Sm and Tb. Journal of Physics: Condensed Matter, 19( 43), 436230-1-436230-8. doi:10.1088/0953-8984/19/43/436230
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      Zanatta AR, Khan A, Kordesch ME. Red-green-blue light emission and energy transfer processes in amorphous SiN films doped with Sm and Tb [Internet]. Journal of Physics: Condensed Matter. 2007 ; 19( 43): 436230-1-436230-8.[citado 2024 nov. 19 ] Available from: https://doi.org/10.1088/0953-8984/19/43/436230
    • Vancouver

      Zanatta AR, Khan A, Kordesch ME. Red-green-blue light emission and energy transfer processes in amorphous SiN films doped with Sm and Tb [Internet]. Journal of Physics: Condensed Matter. 2007 ; 19( 43): 436230-1-436230-8.[citado 2024 nov. 19 ] Available from: https://doi.org/10.1088/0953-8984/19/43/436230
  • Source: Journal of Physics: Condensed Matter. Unidade: IFSC

    Subjects: ÓPTICA, SILICONE, FILMES FINOS, FÍSICA DA MATÉRIA CONDENSADA

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      OLIVEIRA, V. I. e FREIRE JUNIOR, Fernando Lázaro e ZANATTA, Antonio Ricardo. Optical properties of Er and Er + Yb doped hydrogenated amorphous silicon films. Journal of Physics: Condensed Matter, v. 18, n. 32, p. 7709-7716, 2006Tradução . . Disponível em: https://doi.org/10.1088/0953-8984/18/32/018. Acesso em: 19 nov. 2024.
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      Oliveira, V. I., Freire Junior, F. L., & Zanatta, A. R. (2006). Optical properties of Er and Er + Yb doped hydrogenated amorphous silicon films. Journal of Physics: Condensed Matter, 18( 32), 7709-7716. doi:10.1088/0953-8984/18/32/018
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      Oliveira VI, Freire Junior FL, Zanatta AR. Optical properties of Er and Er + Yb doped hydrogenated amorphous silicon films [Internet]. Journal of Physics: Condensed Matter. 2006 ; 18( 32): 7709-7716.[citado 2024 nov. 19 ] Available from: https://doi.org/10.1088/0953-8984/18/32/018
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      Oliveira VI, Freire Junior FL, Zanatta AR. Optical properties of Er and Er + Yb doped hydrogenated amorphous silicon films [Internet]. Journal of Physics: Condensed Matter. 2006 ; 18( 32): 7709-7716.[citado 2024 nov. 19 ] Available from: https://doi.org/10.1088/0953-8984/18/32/018

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