ReP USP - Resultado da busca

Trabalho de evento-anais periodico
Spatial confinement of self-organized MBE-growth 'In IND.x''Ga IND.1-X' As quantum dots (1998)
Quivy, A. A.; Leite, J. R.
Source: Microelectronic Engineering. Conference titles: International Conference on Low Dimensional Structures and Devices. Unidade: IF
Assunto: ENGENHARIA AUTOMOBILÍSTICA
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ABNT
QUIVY, A. A. e LEITE, J. R. Spatial confinement of self-organized MBE-growth 'In IND.x''Ga IND.1-X' As quantum dots. Microelectronic Engineering. Amsterdam: Elsevier Science. . Acesso em: 11 nov. 2024. , 1998
APA
Quivy, A. A., & Leite, J. R. (1998). Spatial confinement of self-organized MBE-growth 'In IND.x''Ga IND.1-X' As quantum dots. Microelectronic Engineering. Amsterdam: Elsevier Science.
NLM
Quivy AA, Leite JR. Spatial confinement of self-organized MBE-growth 'In IND.x''Ga IND.1-X' As quantum dots. Microelectronic Engineering. 1998 ; 43-44 19-23.[citado 2024 nov. 11 ]
Vancouver
Quivy AA, Leite JR. Spatial confinement of self-organized MBE-growth 'In IND.x''Ga IND.1-X' As quantum dots. Microelectronic Engineering. 1998 ; 43-44 19-23.[citado 2024 nov. 11 ]
Trabalho de evento-anais periodico
First principles studies of point defects and impurities in cubic boron nitride (1998)
Castineira, J L P; Leite, J. R.; Scolfaro, L M R; Enderlein, R; Alves, J L A; Leite Alves, H W
Source: Materials Science & Engineering B. Conference titles: International Conference on Low Dimensional Structures and Devices. Unidade: IF
Assunto: ENGENHARIA AUTOMOBILÍSTICA
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ABNT
CASTINEIRA, J L P et al. First principles studies of point defects and impurities in cubic boron nitride. Materials Science & Engineering B. Lausanne: Elsevier Sequoia. . Acesso em: 11 nov. 2024. , 1998
APA
Castineira, J. L. P., Leite, J. R., Scolfaro, L. M. R., Enderlein, R., Alves, J. L. A., & Leite Alves, H. W. (1998). First principles studies of point defects and impurities in cubic boron nitride. Materials Science & Engineering B. Lausanne: Elsevier Sequoia.
NLM
Castineira JLP, Leite JR, Scolfaro LMR, Enderlein R, Alves JLA, Leite Alves HW. First principles studies of point defects and impurities in cubic boron nitride. Materials Science & Engineering B. 1998 ; 51( 1-3): 53-57.[citado 2024 nov. 11 ]
Vancouver
Castineira JLP, Leite JR, Scolfaro LMR, Enderlein R, Alves JLA, Leite Alves HW. First principles studies of point defects and impurities in cubic boron nitride. Materials Science & Engineering B. 1998 ; 51( 1-3): 53-57.[citado 2024 nov. 11 ]
Trabalho de evento-resumo
Exciton localization in GaAs/AlAs superlattices grown on high-index oriented surfaces (1997)
Marega Junior, Euclydes ; Libardi, A L; Lubyshev, D I; González-Borrero, Pedro Pablo; Basmaji, Pierre
Conference titles: International Conference on Low Dimensional Structures and Devices. Unidade: IFSC
Subjects: MATÉRIA CONDENSADA, MATÉRIA CONDENSADA (PROPRIEDADES ELÉTRICAS), SUPERFÍCIE FÍSICA
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ABNT
MAREGA JUNIOR, Euclydes et al. Exciton localization in GaAs/AlAs superlattices grown on high-index oriented surfaces. 1997, Anais.. Lisboa: Instituto de Física de São Carlos, Universidade de São Paulo, 1997. . Acesso em: 11 nov. 2024.
APA
Marega Junior, E., Libardi, A. L., Lubyshev, D. I., González-Borrero, P. P., & Basmaji, P. (1997). Exciton localization in GaAs/AlAs superlattices grown on high-index oriented surfaces. In . Lisboa: Instituto de Física de São Carlos, Universidade de São Paulo.
NLM
Marega Junior E, Libardi AL, Lubyshev DI, González-Borrero PP, Basmaji P. Exciton localization in GaAs/AlAs superlattices grown on high-index oriented surfaces. 1997 ;[citado 2024 nov. 11 ]
Vancouver
Marega Junior E, Libardi AL, Lubyshev DI, González-Borrero PP, Basmaji P. Exciton localization in GaAs/AlAs superlattices grown on high-index oriented surfaces. 1997 ;[citado 2024 nov. 11 ]
Trabalho de evento
Comparative studies of photoluminescence from n- and p-'GAMA'-doping wells in 'GA''AS' (1996)
Enderlein, R; Sipahi, Guilherme Matos ; Scolfaro, L M R; Leite, J. R.; Dias, I E L
Source: Materials Science and Engineering B 35. Conference titles: International Conference on Low Dimensional Structures and Devices. Unidade: IF
Assunto: MATÉRIA CONDENSADA
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ABNT
ENDERLEIN, R et al. Comparative studies of photoluminescence from n- and p-'GAMA'-doping wells in 'GA''AS'. 1996, Anais.. Cingapura: Elsevier, 1996. . Acesso em: 11 nov. 2024.
APA
Enderlein, R., Sipahi, G. M., Scolfaro, L. M. R., Leite, J. R., & Dias, I. E. L. (1996). Comparative studies of photoluminescence from n- and p-'GAMA'-doping wells in 'GA''AS'. In Materials Science and Engineering B 35. Cingapura: Elsevier.
NLM
Enderlein R, Sipahi GM, Scolfaro LMR, Leite JR, Dias IEL. Comparative studies of photoluminescence from n- and p-'GAMA'-doping wells in 'GA''AS'. Materials Science and Engineering B 35. 1996 ;[citado 2024 nov. 11 ]
Vancouver
Enderlein R, Sipahi GM, Scolfaro LMR, Leite JR, Dias IEL. Comparative studies of photoluminescence from n- and p-'GAMA'-doping wells in 'GA''AS'. Materials Science and Engineering B 35. 1996 ;[citado 2024 nov. 11 ]
Trabalho de evento-resumo periodico
Investigation of the photoluminescence linewidth broadening in symmetric and asymmetric in 'GA''AS' / 'GA''AS' n-type 'GAMA'-doped quantum wells (1995)
Tabata, A; Ceschin, A M; Quivy, A. A.; Levine, A; Leite, J. R.; Enderlein, R; Oliveira, J. B. B.; Laureto, E; Goncalves, J L
Source: Materials Science and Engineering B. Conference titles: International Conference on Low Dimensional Structures and Devices. Unidade: IF
Assunto: MATÉRIA CONDENSADA
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ABNT
TABATA, A et al. Investigation of the photoluminescence linewidth broadening in symmetric and asymmetric in 'GA''AS' / 'GA''AS' n-type 'GAMA'-doped quantum wells. Materials Science and Engineering B. Cingapura: Instituto de Física, Universidade de São Paulo. . Acesso em: 11 nov. 2024. , 1995
APA
Tabata, A., Ceschin, A. M., Quivy, A. A., Levine, A., Leite, J. R., Enderlein, R., et al. (1995). Investigation of the photoluminescence linewidth broadening in symmetric and asymmetric in 'GA''AS' / 'GA''AS' n-type 'GAMA'-doped quantum wells. Materials Science and Engineering B. Cingapura: Instituto de Física, Universidade de São Paulo.
NLM
Tabata A, Ceschin AM, Quivy AA, Levine A, Leite JR, Enderlein R, Oliveira JBB, Laureto E, Goncalves JL. Investigation of the photoluminescence linewidth broadening in symmetric and asymmetric in 'GA''AS' / 'GA''AS' n-type 'GAMA'-doped quantum wells. Materials Science and Engineering B. 1995 ;35 401-5.[citado 2024 nov. 11 ]
Vancouver
Tabata A, Ceschin AM, Quivy AA, Levine A, Leite JR, Enderlein R, Oliveira JBB, Laureto E, Goncalves JL. Investigation of the photoluminescence linewidth broadening in symmetric and asymmetric in 'GA''AS' / 'GA''AS' n-type 'GAMA'-doped quantum wells. Materials Science and Engineering B. 1995 ;35 401-5.[citado 2024 nov. 11 ]
Trabalho de evento-resumo periodico
Photoreflectance investigations of semiconductor device structutres (1995)
Soares, J A N T; Beliaev, D; Enderlein, R; Scolfaro, L M R; Leite, J. R.
Source: Materials Science and Engeneering B. Conference titles: International Conference on Low Dimensional Structures and Devices. Unidade: IF
Assunto: MATÉRIA CONDENSADA
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
SOARES, J A N T et al. Photoreflectance investigations of semiconductor device structutres. Materials Science and Engeneering B. Cingapura: Instituto de Física, Universidade de São Paulo. . Acesso em: 11 nov. 2024. , 1995
APA
Soares, J. A. N. T., Beliaev, D., Enderlein, R., Scolfaro, L. M. R., & Leite, J. R. (1995). Photoreflectance investigations of semiconductor device structutres. Materials Science and Engeneering B. Cingapura: Instituto de Física, Universidade de São Paulo.
NLM
Soares JANT, Beliaev D, Enderlein R, Scolfaro LMR, Leite JR. Photoreflectance investigations of semiconductor device structutres. Materials Science and Engeneering B. 1995 ;35 267-72.[citado 2024 nov. 11 ]
Vancouver
Soares JANT, Beliaev D, Enderlein R, Scolfaro LMR, Leite JR. Photoreflectance investigations of semiconductor device structutres. Materials Science and Engeneering B. 1995 ;35 267-72.[citado 2024 nov. 11 ]
Trabalho de evento-anais periodico
Electrical conductivity of 'GAMA'-doping superlattices parallel to the growth direction (1995)
Leite, J. R.; Rodrigues, S C P; Scolfaro, L M R; Enderlein, R; Beliaev, D; Quivy, A. A.
Source: Materials Science and Engeneering B. Conference titles: International Conference on Low Dimensional Structures and Devices. Unidade: IF
Assunto: MATÉRIA CONDENSADA
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
LEITE, J. R. et al. Electrical conductivity of 'GAMA'-doping superlattices parallel to the growth direction. Materials Science and Engeneering B. Cingapura: Instituto de Física, Universidade de São Paulo. . Acesso em: 11 nov. 2024. , 1995
APA
Leite, J. R., Rodrigues, S. C. P., Scolfaro, L. M. R., Enderlein, R., Beliaev, D., & Quivy, A. A. (1995). Electrical conductivity of 'GAMA'-doping superlattices parallel to the growth direction. Materials Science and Engeneering B. Cingapura: Instituto de Física, Universidade de São Paulo.
NLM
Leite JR, Rodrigues SCP, Scolfaro LMR, Enderlein R, Beliaev D, Quivy AA. Electrical conductivity of 'GAMA'-doping superlattices parallel to the growth direction. Materials Science and Engeneering B. 1995 ;35 250-5.[citado 2024 nov. 11 ]
Vancouver
Leite JR, Rodrigues SCP, Scolfaro LMR, Enderlein R, Beliaev D, Quivy AA. Electrical conductivity of 'GAMA'-doping superlattices parallel to the growth direction. Materials Science and Engeneering B. 1995 ;35 250-5.[citado 2024 nov. 11 ]

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