Realistic effective-mass model for III-V zincblend semiconductors (2024)
Source: Abstract Book. Conference titles: Brazilian Workshop on Semiconductor Physics - BWSP. Unidade: IFSC
Subjects: MECÂNICA QUÂNTICA, SISTEMAS HAMILTONIANOS, SEMICONDUTORES
ABNT
WANDERLEY, Adilson Barros e ALVES, Horácio Wagner Leite e SIPAHI, Guilherme Matos. Realistic effective-mass model for III-V zincblend semiconductors. 2024, Anais.. Campinas: Centro Nacional de Pesquisa em Energia e Materiais - CNPEM, 2024. Disponível em: https://repositorio.usp.br/directbitstream/484dc2ef-d5a2-4a67-bdee-09cbfd3d5a7c/3236394.pdf. Acesso em: 06 out. 2025.APA
Wanderley, A. B., Alves, H. W. L., & Sipahi, G. M. (2024). Realistic effective-mass model for III-V zincblend semiconductors. In Abstract Book. Campinas: Centro Nacional de Pesquisa em Energia e Materiais - CNPEM. Recuperado de https://repositorio.usp.br/directbitstream/484dc2ef-d5a2-4a67-bdee-09cbfd3d5a7c/3236394.pdfNLM
Wanderley AB, Alves HWL, Sipahi GM. Realistic effective-mass model for III-V zincblend semiconductors [Internet]. Abstract Book. 2024 ;[citado 2025 out. 06 ] Available from: https://repositorio.usp.br/directbitstream/484dc2ef-d5a2-4a67-bdee-09cbfd3d5a7c/3236394.pdfVancouver
Wanderley AB, Alves HWL, Sipahi GM. Realistic effective-mass model for III-V zincblend semiconductors [Internet]. Abstract Book. 2024 ;[citado 2025 out. 06 ] Available from: https://repositorio.usp.br/directbitstream/484dc2ef-d5a2-4a67-bdee-09cbfd3d5a7c/3236394.pdf