Strain and crystal field splitting inversion in III-Nitrides (2022)
- Autor:
- Autor USP: SIPAHI, GUILHERME MATOS - IFSC
- Unidade: IFSC
- Subjects: NITRITOS; ÓPTICA ELETRÔNICA; SEMICONDUTORES
- Language: Inglês
- Imprenta:
- Publisher: Instituto Tecnológico de Aeronáutica - ITA
- Publisher place: São José dos Campos
- Date published: 2022
- Source:
- Título: Abstract Book
- Conference titles: Brazilian Workshop on Semiconductor Physics - BWSP
-
ABNT
SIPAHI, Guilherme Matos. Strain and crystal field splitting inversion in III-Nitrides. 2022, Anais.. São José dos Campos: Instituto Tecnológico de Aeronáutica - ITA, 2022. Disponível em: https://repositorio.usp.br/directbitstream/5e5bd531-cdee-49ea-858b-52fe79412a39/3096433.pdf. Acesso em: 26 jan. 2026. -
APA
Sipahi, G. M. (2022). Strain and crystal field splitting inversion in III-Nitrides. In Abstract Book. São José dos Campos: Instituto Tecnológico de Aeronáutica - ITA. Recuperado de https://repositorio.usp.br/directbitstream/5e5bd531-cdee-49ea-858b-52fe79412a39/3096433.pdf -
NLM
Sipahi GM. Strain and crystal field splitting inversion in III-Nitrides [Internet]. Abstract Book. 2022 ;[citado 2026 jan. 26 ] Available from: https://repositorio.usp.br/directbitstream/5e5bd531-cdee-49ea-858b-52fe79412a39/3096433.pdf -
Vancouver
Sipahi GM. Strain and crystal field splitting inversion in III-Nitrides [Internet]. Abstract Book. 2022 ;[citado 2026 jan. 26 ] Available from: https://repositorio.usp.br/directbitstream/5e5bd531-cdee-49ea-858b-52fe79412a39/3096433.pdf - Acelerando uma aplicação cientifica com o uso de computação heterogênea
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