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Filtros : "Microelectronics Reliability" Removido: "MACCHIONE, EDUARDO LUIZ AUGUSTO" Limpar

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  • Artigo de periodico

    Ionizing radiation hardness tests of GaN HEMTs for harsh environments (2021)

    Vilas Bôas, Alexis C.; Melo, M.A.A. de; Santos, R. B. B.; Giacomini, R.; Medina, Nilberto H. ; Seixas, L. E.; Finco, S.; Palomo, F. R.; Romero-Maestre, A.; Guazzelli, Marcilei A.

    Source: Microelectronics Reliability. Unidade: IF

    Subjects: FÍSICA NUCLEAR, RADIAÇÃO IONIZANTE, ELETRÔNICA QUÂNTICA, NANOTECNOLOGIA

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    • ABNT

      VILAS BÔAS, Alexis C. et al. Ionizing radiation hardness tests of GaN HEMTs for harsh environments. Microelectronics Reliability, v. 116, 2021Tradução . . Disponível em: https://doi.org/10.1016/j.microrel.2020.114000. Acesso em: 16 jun. 2024.

    • APA

      Vilas Bôas, A. C., Melo, M. A. A. de, Santos, R. B. B., Giacomini, R., Medina, N. H., Seixas, L. E., et al. (2021). Ionizing radiation hardness tests of GaN HEMTs for harsh environments. Microelectronics Reliability, 116. doi:10.1016/j.microrel.2020.114000

    • NLM

      Vilas Bôas AC, Melo MAA de, Santos RBB, Giacomini R, Medina NH, Seixas LE, Finco S, Palomo FR, Romero-Maestre A, Guazzelli MA. Ionizing radiation hardness tests of GaN HEMTs for harsh environments [Internet]. Microelectronics Reliability. 2021 ; 116[citado 2024 jun. 16 ] Available from: https://doi.org/10.1016/j.microrel.2020.114000

    • Vancouver

      Vilas Bôas AC, Melo MAA de, Santos RBB, Giacomini R, Medina NH, Seixas LE, Finco S, Palomo FR, Romero-Maestre A, Guazzelli MA. Ionizing radiation hardness tests of GaN HEMTs for harsh environments [Internet]. Microelectronics Reliability. 2021 ; 116[citado 2024 jun. 16 ] Available from: https://doi.org/10.1016/j.microrel.2020.114000

  • Artigo de periodico

    Combined ionizing radiation & electromagnetic interference test procedure to achieve reliable integrated circuits (2019)

    Goerl, Roger; Villa, Paulo; Vargas, Fabian L; Marcon, César A; Medina, Nilberto Heder ; Added, Nemitala ; Guazzelli, Marcilei A

    Source: Microelectronics Reliability. Unidade: IF

    Subjects: RADIAÇÃO IONIZANTE, INTERFERÊNCIA ELETROMAGNÉTICA, CIRCUITOS INTEGRADOS

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    • ABNT

      GOERL, Roger et al. Combined ionizing radiation & electromagnetic interference test procedure to achieve reliable integrated circuits. Microelectronics Reliability, v. 100–101, p. 113341-7, 2019Tradução . . Disponível em: https://doi.org/10.1016/j.microrel.2019.06.033. Acesso em: 16 jun. 2024.

    • APA

      Goerl, R., Villa, P., Vargas, F. L., Marcon, C. A., Medina, N. H., Added, N., & Guazzelli, M. A. (2019). Combined ionizing radiation & electromagnetic interference test procedure to achieve reliable integrated circuits. Microelectronics Reliability, 100–101, 113341-7. doi:10.1016/j.microrel.2019.06.033

    • NLM

      Goerl R, Villa P, Vargas FL, Marcon CA, Medina NH, Added N, Guazzelli MA. Combined ionizing radiation & electromagnetic interference test procedure to achieve reliable integrated circuits [Internet]. Microelectronics Reliability. 2019 ; 100–101 113341-7.[citado 2024 jun. 16 ] Available from: https://doi.org/10.1016/j.microrel.2019.06.033

    • Vancouver

      Goerl R, Villa P, Vargas FL, Marcon CA, Medina NH, Added N, Guazzelli MA. Combined ionizing radiation & electromagnetic interference test procedure to achieve reliable integrated circuits [Internet]. Microelectronics Reliability. 2019 ; 100–101 113341-7.[citado 2024 jun. 16 ] Available from: https://doi.org/10.1016/j.microrel.2019.06.033

  • Artigo de periodico

    Investigation of Bulk and DTMOS triple-gate devices under 60 MeV proton irradiation (2014)

    Caño de Andrade, Maria Glória; Collaert, Nadine ; Simoen, Eddy ; Claeys, Cor ; Aoulaiche, Marc; Martino, João Antonio

    Source: Microelectronics Reliability. Unidade: EP

    Subjects: SILÍCIO, MICROELETRÔNICA

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    • ABNT

      CAÑO DE ANDRADE, Maria Glória et al. Investigation of Bulk and DTMOS triple-gate devices under 60 MeV proton irradiation. Microelectronics Reliability, v. 54, n. 11, p. 2349-2354, 2014Tradução . . Disponível em: https://doi.org/10.1016/j.microrel.2014.06.013. Acesso em: 16 jun. 2024.

    • APA

      Caño de Andrade, M. G., Collaert, N., Simoen, E., Claeys, C., Aoulaiche, M., & Martino, J. A. (2014). Investigation of Bulk and DTMOS triple-gate devices under 60 MeV proton irradiation. Microelectronics Reliability, 54( 11), 2349-2354. doi:10.1016/j.microrel.2014.06.013

    • NLM

      Caño de Andrade MG, Collaert N, Simoen E, Claeys C, Aoulaiche M, Martino JA. Investigation of Bulk and DTMOS triple-gate devices under 60 MeV proton irradiation [Internet]. Microelectronics Reliability. 2014 ; 54( 11): 2349-2354.[citado 2024 jun. 16 ] Available from: https://doi.org/10.1016/j.microrel.2014.06.013

    • Vancouver

      Caño de Andrade MG, Collaert N, Simoen E, Claeys C, Aoulaiche M, Martino JA. Investigation of Bulk and DTMOS triple-gate devices under 60 MeV proton irradiation [Internet]. Microelectronics Reliability. 2014 ; 54( 11): 2349-2354.[citado 2024 jun. 16 ] Available from: https://doi.org/10.1016/j.microrel.2014.06.013
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