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  • Artigo de periodico

    Unsupervised machine learning application to identify single-event transients (SETs) from noise events in MOSFET transistor ionizing radiation effects (2023)

    Allegro, Paula Rangel Pestana ; Aguiar, Vitor Ângelo Paulino de ; Added, Nemitala ; Medina, Nilberto Heder ; Macchione, Eduardo Luiz Augusto ; Alberton, Saulo Gabriel Pereira Nascimento

    Source: Microelectronics Reliability. Unidade: IF

    Assunto: RADIAÇÃO IONIZANTE

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    • ABNT

      ALLEGRO, Paula Rangel Pestana et al. Unsupervised machine learning application to identify single-event transients (SETs) from noise events in MOSFET transistor ionizing radiation effects. Microelectronics Reliability, v. 142, 2023Tradução . . Disponível em: https://doi.org/10.1016/j.microrel.2023.114916. Acesso em: 27 nov. 2025.

    • APA

      Allegro, P. R. P., Aguiar, V. Â. P. de, Added, N., Medina, N. H., Macchione, E. L. A., & Alberton, S. G. P. N. (2023). Unsupervised machine learning application to identify single-event transients (SETs) from noise events in MOSFET transistor ionizing radiation effects. Microelectronics Reliability, 142. doi:10.1016/j.microrel.2023.114916

    • NLM

      Allegro PRP, Aguiar VÂP de, Added N, Medina NH, Macchione ELA, Alberton SGPN. Unsupervised machine learning application to identify single-event transients (SETs) from noise events in MOSFET transistor ionizing radiation effects [Internet]. Microelectronics Reliability. 2023 ; 142[citado 2025 nov. 27 ] Available from: https://doi.org/10.1016/j.microrel.2023.114916

    • Vancouver

      Allegro PRP, Aguiar VÂP de, Added N, Medina NH, Macchione ELA, Alberton SGPN. Unsupervised machine learning application to identify single-event transients (SETs) from noise events in MOSFET transistor ionizing radiation effects [Internet]. Microelectronics Reliability. 2023 ; 142[citado 2025 nov. 27 ] Available from: https://doi.org/10.1016/j.microrel.2023.114916

  • Artigo de periodico

    Charge deposition analysis of heavy-ion-induced single-event burnout in low-voltage power VDMOSFET (2022)

    Alberton, S. G. ; Aguiar, Vitor^Ângelo Paulino de ; Medina, Nilberto Heder ; Added, Nemitala ; Macchione, E L A ; Menegasso, R. ; Cesário, G. J.; Santos, Hellen Cristine ; Scarduelli, Valdir Brunetti ; Alcántara-Núñez, J. A.; Guazzelli, M. A.; Santos, R. B. B.; Flechas, D.

    Source: Microelectronics Reliability. Unidade: IF

    Subjects: FÍSICA NUCLEAR, ÍONS PESADOS, SEMICONDUTORES

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    • ABNT

      ALBERTON, S. G. et al. Charge deposition analysis of heavy-ion-induced single-event burnout in low-voltage power VDMOSFET. Microelectronics Reliability, v. 137, 2022Tradução . . Disponível em: https://doi.org/10.1016/j.microrel.2022.114784. Acesso em: 27 nov. 2025.

    • APA

      Alberton, S. G., Aguiar, V. ^Â. P. de, Medina, N. H., Added, N., Macchione, E. L. A., Menegasso, R., et al. (2022). Charge deposition analysis of heavy-ion-induced single-event burnout in low-voltage power VDMOSFET. Microelectronics Reliability, 137. doi:10.1016/j.microrel.2022.114784

    • NLM

      Alberton SG, Aguiar V^ÂP de, Medina NH, Added N, Macchione ELA, Menegasso R, Cesário GJ, Santos HC, Scarduelli VB, Alcántara-Núñez JA, Guazzelli MA, Santos RBB, Flechas D. Charge deposition analysis of heavy-ion-induced single-event burnout in low-voltage power VDMOSFET [Internet]. Microelectronics Reliability. 2022 ; 137[citado 2025 nov. 27 ] Available from: https://doi.org/10.1016/j.microrel.2022.114784

    • Vancouver

      Alberton SG, Aguiar V^ÂP de, Medina NH, Added N, Macchione ELA, Menegasso R, Cesário GJ, Santos HC, Scarduelli VB, Alcántara-Núñez JA, Guazzelli MA, Santos RBB, Flechas D. Charge deposition analysis of heavy-ion-induced single-event burnout in low-voltage power VDMOSFET [Internet]. Microelectronics Reliability. 2022 ; 137[citado 2025 nov. 27 ] Available from: https://doi.org/10.1016/j.microrel.2022.114784

  • Artigo de periodico

    Combined ionizing radiation & electromagnetic interference test procedure to achieve reliable integrated circuits (2019)

    Goerl, Roger; Villa, Paulo; Vargas, Fabian L; Marcon, César A; Medina, Nilberto Heder ; Added, Nemitala ; Guazzelli, Marcilei A

    Source: Microelectronics Reliability. Unidade: IF

    Subjects: RADIAÇÃO IONIZANTE, INTERFERÊNCIA ELETROMAGNÉTICA, CIRCUITOS INTEGRADOS

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    • ABNT

      GOERL, Roger et al. Combined ionizing radiation & electromagnetic interference test procedure to achieve reliable integrated circuits. Microelectronics Reliability, v. 100–101, p. 113341-7, 2019Tradução . . Disponível em: https://doi.org/10.1016/j.microrel.2019.06.033. Acesso em: 27 nov. 2025.

    • APA

      Goerl, R., Villa, P., Vargas, F. L., Marcon, C. A., Medina, N. H., Added, N., & Guazzelli, M. A. (2019). Combined ionizing radiation & electromagnetic interference test procedure to achieve reliable integrated circuits. Microelectronics Reliability, 100–101, 113341-7. doi:10.1016/j.microrel.2019.06.033

    • NLM

      Goerl R, Villa P, Vargas FL, Marcon CA, Medina NH, Added N, Guazzelli MA. Combined ionizing radiation & electromagnetic interference test procedure to achieve reliable integrated circuits [Internet]. Microelectronics Reliability. 2019 ; 100–101 113341-7.[citado 2025 nov. 27 ] Available from: https://doi.org/10.1016/j.microrel.2019.06.033

    • Vancouver

      Goerl R, Villa P, Vargas FL, Marcon CA, Medina NH, Added N, Guazzelli MA. Combined ionizing radiation & electromagnetic interference test procedure to achieve reliable integrated circuits [Internet]. Microelectronics Reliability. 2019 ; 100–101 113341-7.[citado 2025 nov. 27 ] Available from: https://doi.org/10.1016/j.microrel.2019.06.033

  • Artigo de periodico

    Investigation of Bulk and DTMOS triple-gate devices under 60 MeV proton irradiation (2014)

    Caño de Andrade, Maria Glória; Collaert, Nadine ; Simoen, Eddy ; Claeys, Cor ; Aoulaiche, Marc; Martino, João Antonio

    Source: Microelectronics Reliability. Unidade: EP

    Subjects: SILÍCIO, MICROELETRÔNICA

    Acesso à fonteDOIHow to cite
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    • ABNT

      CAÑO DE ANDRADE, Maria Glória et al. Investigation of Bulk and DTMOS triple-gate devices under 60 MeV proton irradiation. Microelectronics Reliability, v. 54, n. 11, p. 2349-2354, 2014Tradução . . Disponível em: https://doi.org/10.1016/j.microrel.2014.06.013. Acesso em: 27 nov. 2025.

    • APA

      Caño de Andrade, M. G., Collaert, N., Simoen, E., Claeys, C., Aoulaiche, M., & Martino, J. A. (2014). Investigation of Bulk and DTMOS triple-gate devices under 60 MeV proton irradiation. Microelectronics Reliability, 54( 11), 2349-2354. doi:10.1016/j.microrel.2014.06.013

    • NLM

      Caño de Andrade MG, Collaert N, Simoen E, Claeys C, Aoulaiche M, Martino JA. Investigation of Bulk and DTMOS triple-gate devices under 60 MeV proton irradiation [Internet]. Microelectronics Reliability. 2014 ; 54( 11): 2349-2354.[citado 2025 nov. 27 ] Available from: https://doi.org/10.1016/j.microrel.2014.06.013

    • Vancouver

      Caño de Andrade MG, Collaert N, Simoen E, Claeys C, Aoulaiche M, Martino JA. Investigation of Bulk and DTMOS triple-gate devices under 60 MeV proton irradiation [Internet]. Microelectronics Reliability. 2014 ; 54( 11): 2349-2354.[citado 2025 nov. 27 ] Available from: https://doi.org/10.1016/j.microrel.2014.06.013
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