ReP USP - Resultado da busca

Trabalho de evento
Electroreflectance and photoresponse of 'NIO IND.X' thin films (1992)
Fantini, Márcia Carvalho de Abreu ; Gorenstein, A; Shen, W M; Tomkiewicz, M
Source: Anais. Conference titles: Optica Materials Technology for Energy Efficiency and Solar Nergyconversion. Unidade: IF
Assunto: MATÉRIA CONDENSADA
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
FANTINI, Márcia Carvalho de Abreu et al. Electroreflectance and photoresponse of 'NIO IND.X' thin films. 1992, Anais.. Washington: Spie, 1992. . Acesso em: 13 out. 2024.
APA
Fantini, M. C. de A., Gorenstein, A., Shen, W. M., & Tomkiewicz, M. (1992). Electroreflectance and photoresponse of 'NIO IND.X' thin films. In Anais. Washington: Spie.
NLM
Fantini MC de A, Gorenstein A, Shen WM, Tomkiewicz M. Electroreflectance and photoresponse of 'NIO IND.X' thin films. Anais. 1992 ;[citado 2024 out. 13 ]
Vancouver
Fantini MC de A, Gorenstein A, Shen WM, Tomkiewicz M. Electroreflectance and photoresponse of 'NIO IND.X' thin films. Anais. 1992 ;[citado 2024 out. 13 ]
Trabalho de evento-resumo
Espectroscopia da impedancia e de modulacao optica de dispositivos do tipo barreira schottky e mos de silicio (1991)
Fantini, Márcia Carvalho de Abreu ; Shen, W M; Tomkievicz, M; Gambino, J P
Source: Resumos. Conference titles: Encontro Nacional de Fisica da Materia Condensada. Unidade: IF
Assunto: MATÉRIA CONDENSADA
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
FANTINI, Márcia Carvalho de Abreu et al. Espectroscopia da impedancia e de modulacao optica de dispositivos do tipo barreira schottky e mos de silicio. 1991, Anais.. São Paulo: Sociedade Brasileira de Fisica, 1991. . Acesso em: 13 out. 2024.
APA
Fantini, M. C. de A., Shen, W. M., Tomkievicz, M., & Gambino, J. P. (1991). Espectroscopia da impedancia e de modulacao optica de dispositivos do tipo barreira schottky e mos de silicio. In Resumos. São Paulo: Sociedade Brasileira de Fisica.
NLM
Fantini MC de A, Shen WM, Tomkievicz M, Gambino JP. Espectroscopia da impedancia e de modulacao optica de dispositivos do tipo barreira schottky e mos de silicio. Resumos. 1991 ;[citado 2024 out. 13 ]
Vancouver
Fantini MC de A, Shen WM, Tomkievicz M, Gambino JP. Espectroscopia da impedancia e de modulacao optica de dispositivos do tipo barreira schottky e mos de silicio. Resumos. 1991 ;[citado 2024 out. 13 ]
Artigo de periodico
Electrochemical deposition of high tc superconducting thin films (1990)
Tomkiewicz, M; Zhang, W B; Fantini, Márcia Carvalho de Abreu ; Montano, P M; Shen, W M; Zhao, J; Seehra, M S
Source: Spie. Unidade: IF
Assunto: MATÉRIA CONDENSADA (PROPRIEDADES ELÉTRICAS)
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
TOMKIEWICZ, M et al. Electrochemical deposition of high tc superconducting thin films. Spie, v. 1287, p. 48-53, 1990Tradução . . Disponível em: https://doi.org/10.1117/12.20881. Acesso em: 13 out. 2024.
APA
Tomkiewicz, M., Zhang, W. B., Fantini, M. C. de A., Montano, P. M., Shen, W. M., Zhao, J., & Seehra, M. S. (1990). Electrochemical deposition of high tc superconducting thin films. Spie, 1287, 48-53. doi:10.1117/12.20881
NLM
Tomkiewicz M, Zhang WB, Fantini MC de A, Montano PM, Shen WM, Zhao J, Seehra MS. Electrochemical deposition of high tc superconducting thin films [Internet]. Spie. 1990 ;1287 48-53.[citado 2024 out. 13 ] Available from: https://doi.org/10.1117/12.20881
Vancouver
Tomkiewicz M, Zhang WB, Fantini MC de A, Montano PM, Shen WM, Zhao J, Seehra MS. Electrochemical deposition of high tc superconducting thin films [Internet]. Spie. 1990 ;1287 48-53.[citado 2024 out. 13 ] Available from: https://doi.org/10.1117/12.20881
Artigo de periodico
Liquid junctions for characterization of electronic materials . Ii. Photoreflectance and electroreflectance of n-'SI' (1989)
Shen, W M; Fantini, Márcia Carvalho de Abreu ; Tomkiewicz, M; Gambino, J P
Source: Journal of Applied Physics. Unidade: IF
Assunto: CRISTALOGRAFIA
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
SHEN, W M et al. Liquid junctions for characterization of electronic materials . Ii. Photoreflectance and electroreflectance of n-'SI'. Journal of Applied Physics, v. 66, n. 4 , p. 1759-64, 1989Tradução . . Acesso em: 13 out. 2024.
APA
Shen, W. M., Fantini, M. C. de A., Tomkiewicz, M., & Gambino, J. P. (1989). Liquid junctions for characterization of electronic materials . Ii. Photoreflectance and electroreflectance of n-'SI'. Journal of Applied Physics, 66( 4 ), 1759-64.
NLM
Shen WM, Fantini MC de A, Tomkiewicz M, Gambino JP. Liquid junctions for characterization of electronic materials . Ii. Photoreflectance and electroreflectance of n-'SI'. Journal of Applied Physics. 1989 ;66( 4 ): 1759-64.[citado 2024 out. 13 ]
Vancouver
Shen WM, Fantini MC de A, Tomkiewicz M, Gambino JP. Liquid junctions for characterization of electronic materials . Ii. Photoreflectance and electroreflectance of n-'SI'. Journal of Applied Physics. 1989 ;66( 4 ): 1759-64.[citado 2024 out. 13 ]
Artigo de periodico
Liquid junctions for characterization of electronic materials . Iv. Impendance spectroscopy of reactive ion etched 'SI' (1989)
Fantini, Márcia Carvalho de Abreu ; Shen, W M; Tomkiewicz, M; Gambino, J P
Source: Journal of Applied Physics. Unidade: IF
Assunto: SILÍCIO
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
FANTINI, Márcia Carvalho de Abreu et al. Liquid junctions for characterization of electronic materials . Iv. Impendance spectroscopy of reactive ion etched 'SI'. Journal of Applied Physics, v. 66, n. 5 , p. 2148-55, 1989Tradução . . Acesso em: 13 out. 2024.
APA
Fantini, M. C. de A., Shen, W. M., Tomkiewicz, M., & Gambino, J. P. (1989). Liquid junctions for characterization of electronic materials . Iv. Impendance spectroscopy of reactive ion etched 'SI'. Journal of Applied Physics, 66( 5 ), 2148-55.
NLM
Fantini MC de A, Shen WM, Tomkiewicz M, Gambino JP. Liquid junctions for characterization of electronic materials . Iv. Impendance spectroscopy of reactive ion etched 'SI'. Journal of Applied Physics. 1989 ;66( 5 ): 2148-55.[citado 2024 out. 13 ]
Vancouver
Fantini MC de A, Shen WM, Tomkiewicz M, Gambino JP. Liquid junctions for characterization of electronic materials . Iv. Impendance spectroscopy of reactive ion etched 'SI'. Journal of Applied Physics. 1989 ;66( 5 ): 2148-55.[citado 2024 out. 13 ]
Artigo de periodico
Liquid junctions for characterization of electronic materials . Iii. Modulation spectroscopies of reactive ion etching of si (1989)
Shen, W M; Fantini, Márcia Carvalho de Abreu ; Pollak, F H; Tomkiewicz, M; Leary, H; Gambino, J P
Source: Journal of Applied Physics. Unidade: IF
Assunto: CRISTALOGRAFIA
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
SHEN, W M et al. Liquid junctions for characterization of electronic materials . Iii. Modulation spectroscopies of reactive ion etching of si. Journal of Applied Physics, v. 66, n. 4 , p. 1765-71, 1989Tradução . . Disponível em: https://doi.org/10.1063/1.344367. Acesso em: 13 out. 2024.
APA
Shen, W. M., Fantini, M. C. de A., Pollak, F. H., Tomkiewicz, M., Leary, H., & Gambino, J. P. (1989). Liquid junctions for characterization of electronic materials . Iii. Modulation spectroscopies of reactive ion etching of si. Journal of Applied Physics, 66( 4 ), 1765-71. doi:10.1063/1.344367
NLM
Shen WM, Fantini MC de A, Pollak FH, Tomkiewicz M, Leary H, Gambino JP. Liquid junctions for characterization of electronic materials . Iii. Modulation spectroscopies of reactive ion etching of si [Internet]. Journal of Applied Physics. 1989 ;66( 4 ): 1765-71.[citado 2024 out. 13 ] Available from: https://doi.org/10.1063/1.344367
Vancouver
Shen WM, Fantini MC de A, Pollak FH, Tomkiewicz M, Leary H, Gambino JP. Liquid junctions for characterization of electronic materials . Iii. Modulation spectroscopies of reactive ion etching of si [Internet]. Journal of Applied Physics. 1989 ;66( 4 ): 1765-71.[citado 2024 out. 13 ] Available from: https://doi.org/10.1063/1.344367
Artigo de periodico
Liquid junctions for characterization of electronic materials . V. Comparison with solid state devices used to characterize reactive ion etching of 'SI' (1989)
Fantini, Márcia Carvalho de Abreu ; Shen, W M; Tomkiewicz, M; Gambino, J P
Source: Journal of Applied Physics. Unidade: IF
Assunto: SILÍCIO
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
FANTINI, Márcia Carvalho de Abreu et al. Liquid junctions for characterization of electronic materials . V. Comparison with solid state devices used to characterize reactive ion etching of 'SI'. Journal of Applied Physics, v. 66, n. 10, p. 4846-53, 1989Tradução . . Disponível em: https://doi.org/10.1063/1.343801. Acesso em: 13 out. 2024.
APA
Fantini, M. C. de A., Shen, W. M., Tomkiewicz, M., & Gambino, J. P. (1989). Liquid junctions for characterization of electronic materials . V. Comparison with solid state devices used to characterize reactive ion etching of 'SI'. Journal of Applied Physics, 66( 10), 4846-53. doi:10.1063/1.343801
NLM
Fantini MC de A, Shen WM, Tomkiewicz M, Gambino JP. Liquid junctions for characterization of electronic materials . V. Comparison with solid state devices used to characterize reactive ion etching of 'SI' [Internet]. Journal of Applied Physics. 1989 ;66( 10): 4846-53.[citado 2024 out. 13 ] Available from: https://doi.org/10.1063/1.343801
Vancouver
Fantini MC de A, Shen WM, Tomkiewicz M, Gambino JP. Liquid junctions for characterization of electronic materials . V. Comparison with solid state devices used to characterize reactive ion etching of 'SI' [Internet]. Journal of Applied Physics. 1989 ;66( 10): 4846-53.[citado 2024 out. 13 ] Available from: https://doi.org/10.1063/1.343801
Artigo de periodico
Liquid junctions for characterization of electronic materials . I. The potential distribution at the 'SI' / method interface (1989)
Fantini, Márcia Carvalho de Abreu ; Shen, W M; Tomkiewicz, M; Gambino, J P
Source: Journal of Applied Physics. Unidade: IF
Assunto: SILÍCIO
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
FANTINI, Márcia Carvalho de Abreu et al. Liquid junctions for characterization of electronic materials . I. The potential distribution at the 'SI' / method interface. Journal of Applied Physics, v. 65, n. 12, p. 4884-90, 1989Tradução . . Disponível em: https://doi.org/10.1063/1.343203. Acesso em: 13 out. 2024.
APA
Fantini, M. C. de A., Shen, W. M., Tomkiewicz, M., & Gambino, J. P. (1989). Liquid junctions for characterization of electronic materials . I. The potential distribution at the 'SI' / method interface. Journal of Applied Physics, 65( 12), 4884-90. doi:10.1063/1.343203
NLM
Fantini MC de A, Shen WM, Tomkiewicz M, Gambino JP. Liquid junctions for characterization of electronic materials . I. The potential distribution at the 'SI' / method interface [Internet]. Journal of Applied Physics. 1989 ;65( 12): 4884-90.[citado 2024 out. 13 ] Available from: https://doi.org/10.1063/1.343203
Vancouver
Fantini MC de A, Shen WM, Tomkiewicz M, Gambino JP. Liquid junctions for characterization of electronic materials . I. The potential distribution at the 'SI' / method interface [Internet]. Journal of Applied Physics. 1989 ;65( 12): 4884-90.[citado 2024 out. 13 ] Available from: https://doi.org/10.1063/1.343203

USP Schools

ReP

Filtros

Authors