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Trabalho de evento
Physical characterization and reliability aspects of MuGFETs (2007)
Claeys, Cor ; Simoen, Eddy ; Rafi, J.M.; Pavanello, Marcelo Antonio ; Martino, João Antonio
Source: SBMicro 2007. Conference titles: International Symposium on Microelectronics Technology and Devices SBMICRO. Unidade: EP
Assunto: MICROELETRÔNICA
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
CLAEYS, Cor et al. Physical characterization and reliability aspects of MuGFETs. 2007, Anais.. Pennington: The Electrochemical Society, 2007. . Acesso em: 08 out. 2024.
APA
Claeys, C., Simoen, E., Rafi, J. M., Pavanello, M. A., & Martino, J. A. (2007). Physical characterization and reliability aspects of MuGFETs. In SBMicro 2007. Pennington: The Electrochemical Society.
NLM
Claeys C, Simoen E, Rafi JM, Pavanello MA, Martino JA. Physical characterization and reliability aspects of MuGFETs. SBMicro 2007. 2007 ;[citado 2024 out. 08 ]
Vancouver
Claeys C, Simoen E, Rafi JM, Pavanello MA, Martino JA. Physical characterization and reliability aspects of MuGFETs. SBMicro 2007. 2007 ;[citado 2024 out. 08 ]
Parte de monografia/livro
Temperature influence on the generation lifetime determination based on drain current transients in partially depleted SOI nMOSFETs (2004)
Martino, João Antonio ; Rafi, J.M.; Mercha, A.; Simoen, Eddy ; Claeys, Cor
Source: 8. Symposium on High Purity Silicon: proceedings. Conference titles: Symposium on High Purity Silicon. Unidade: EP
Subjects: MICROELETRÔNICA, CIRCUITOS INTEGRADOS
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
MARTINO, João Antonio et al. Temperature influence on the generation lifetime determination based on drain current transients in partially depleted SOI nMOSFETs. 8. Symposium on High Purity Silicon: proceedings. Tradução . Pennington: The Electrochemical Society, 2004. . . Acesso em: 08 out. 2024.
APA
Martino, J. A., Rafi, J. M., Mercha, A., Simoen, E., & Claeys, C. (2004). Temperature influence on the generation lifetime determination based on drain current transients in partially depleted SOI nMOSFETs. In 8. Symposium on High Purity Silicon: proceedings. Pennington: The Electrochemical Society.
NLM
Martino JA, Rafi JM, Mercha A, Simoen E, Claeys C. Temperature influence on the generation lifetime determination based on drain current transients in partially depleted SOI nMOSFETs. In: 8. Symposium on High Purity Silicon: proceedings. Pennington: The Electrochemical Society; 2004. [citado 2024 out. 08 ]
Vancouver
Martino JA, Rafi JM, Mercha A, Simoen E, Claeys C. Temperature influence on the generation lifetime determination based on drain current transients in partially depleted SOI nMOSFETs. In: 8. Symposium on High Purity Silicon: proceedings. Pennington: The Electrochemical Society; 2004. [citado 2024 out. 08 ]
Artigo de periodico
Low temperature operation of 0.13 'mü' partially-depleted SOI nMOSFETs with floating body (2002)
Pavanello, Marcelo Antonio ; Martino, João Antonio ; Mercha, A.; Rafi, J.M.; Simoen, Eddy ; Claeys, Cor ; Van Meer, H.; De Meyer, K.
Source: Journal de Physique IV. Unidade: EP
Assunto: CIRCUITOS INTEGRADOS MOS
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
PAVANELLO, Marcelo Antonio et al. Low temperature operation of 0.13 'mü' partially-depleted SOI nMOSFETs with floating body. Journal de Physique IV, v. 12, n. 3, 2002Tradução . . Acesso em: 08 out. 2024.
APA
Pavanello, M. A., Martino, J. A., Mercha, A., Rafi, J. M., Simoen, E., Claeys, C., et al. (2002). Low temperature operation of 0.13 'mü' partially-depleted SOI nMOSFETs with floating body. Journal de Physique IV, 12( 3).
NLM
Pavanello MA, Martino JA, Mercha A, Rafi JM, Simoen E, Claeys C, Van Meer H, De Meyer K. Low temperature operation of 0.13 'mü' partially-depleted SOI nMOSFETs with floating body. Journal de Physique IV. 2002 ;12( 3):[citado 2024 out. 08 ]
Vancouver
Pavanello MA, Martino JA, Mercha A, Rafi JM, Simoen E, Claeys C, Van Meer H, De Meyer K. Low temperature operation of 0.13 'mü' partially-depleted SOI nMOSFETs with floating body. Journal de Physique IV. 2002 ;12( 3):[citado 2024 out. 08 ]

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