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Dissertação (Mestrado)
Fotodetectores de radiação infravermelha baseados em pontos quânticos de submonocamada (2017)
Al-Zeidan, Ahmad; Quivy, Alain Andre (Orientador)
Unidade: IF
Subjects: EPITAXIA POR FEIXE MOLECULAR, FOTODETECTORES, INFRAVERMELHO
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ABNT
AL-ZEIDAN, Ahmad. Fotodetectores de radiação infravermelha baseados em pontos quânticos de submonocamada. 2017. Dissertação (Mestrado) – Universidade de São Paulo, São Paulo, 2017. Disponível em: http://www.teses.usp.br/teses/disponiveis/43/43134/tde-10082018-145516/. Acesso em: 03 nov. 2025.
APA
Al-Zeidan, A. (2017). Fotodetectores de radiação infravermelha baseados em pontos quânticos de submonocamada (Dissertação (Mestrado). Universidade de São Paulo, São Paulo. Recuperado de http://www.teses.usp.br/teses/disponiveis/43/43134/tde-10082018-145516/
NLM
Al-Zeidan A. Fotodetectores de radiação infravermelha baseados em pontos quânticos de submonocamada [Internet]. 2017 ;[citado 2025 nov. 03 ] Available from: http://www.teses.usp.br/teses/disponiveis/43/43134/tde-10082018-145516/
Vancouver
Al-Zeidan A. Fotodetectores de radiação infravermelha baseados em pontos quânticos de submonocamada [Internet]. 2017 ;[citado 2025 nov. 03 ] Available from: http://www.teses.usp.br/teses/disponiveis/43/43134/tde-10082018-145516/
Artigo de periodico
Efficient method for calculating electronic bound states in arbitrary one-dimensional quantum wells (2017)
Aquino, V M de; Iwamoto, H; Dias, I F L; Laureto, E; Silva, M A T da; Silva, Euzi Conceicao Fernandes da; Quivy, Alain Andre
Source: Superlattices and Microstructures. Unidade: IF
Subjects: POÇOS QUÂNTICOS, FOTODETECTORES, ELETRÔNICA QUÂNTICA
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ABNT
AQUINO, V M de et al. Efficient method for calculating electronic bound states in arbitrary one-dimensional quantum wells. Superlattices and Microstructures, v. 101, n. ja, p. 236-243, 2017Tradução . . Disponível em: https://doi.org/10.1016/j.spmi.2016.11.042. Acesso em: 03 nov. 2025.
APA
Aquino, V. M. de, Iwamoto, H., Dias, I. F. L., Laureto, E., Silva, M. A. T. da, Silva, E. C. F. da, & Quivy, A. A. (2017). Efficient method for calculating electronic bound states in arbitrary one-dimensional quantum wells. Superlattices and Microstructures, 101( ja), 236-243. doi:10.1016/j.spmi.2016.11.042
NLM
Aquino VM de, Iwamoto H, Dias IFL, Laureto E, Silva MAT da, Silva ECF da, Quivy AA. Efficient method for calculating electronic bound states in arbitrary one-dimensional quantum wells [Internet]. Superlattices and Microstructures. 2017 ; 101( ja): 236-243.[citado 2025 nov. 03 ] Available from: https://doi.org/10.1016/j.spmi.2016.11.042
Vancouver
Aquino VM de, Iwamoto H, Dias IFL, Laureto E, Silva MAT da, Silva ECF da, Quivy AA. Efficient method for calculating electronic bound states in arbitrary one-dimensional quantum wells [Internet]. Superlattices and Microstructures. 2017 ; 101( ja): 236-243.[citado 2025 nov. 03 ] Available from: https://doi.org/10.1016/j.spmi.2016.11.042
Artigo de periodico
Simulation of the dark current of quantum-well infrared photodetectors (2017)
Claro, M. S.; Fernandes, F. M.; Silva, Euzi Conceicao Fernandes da; Quivy, Alain Andre
Source: Superlattices and Microstructures. Unidade: IF
Subjects: FOTODETECTORES, SEMICONDUTORES
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ABNT
CLARO, M. S. et al. Simulation of the dark current of quantum-well infrared photodetectors. Superlattices and Microstructures, v. 104, p. 232-239, 2017Tradução . . Disponível em: http://www.sciencedirect.com/science/article/pii/S0749603617300745?via*3Dihub. Acesso em: 03 nov. 2025.
APA
Claro, M. S., Fernandes, F. M., Silva, E. C. F. da, & Quivy, A. A. (2017). Simulation of the dark current of quantum-well infrared photodetectors. Superlattices and Microstructures, 104, 232-239. doi:10.1016/j.spmi.2017.02.015
NLM
Claro MS, Fernandes FM, Silva ECF da, Quivy AA. Simulation of the dark current of quantum-well infrared photodetectors [Internet]. Superlattices and Microstructures. 2017 ; 104 232-239.[citado 2025 nov. 03 ] Available from: http://www.sciencedirect.com/science/article/pii/S0749603617300745?via*3Dihub
Vancouver
Claro MS, Fernandes FM, Silva ECF da, Quivy AA. Simulation of the dark current of quantum-well infrared photodetectors [Internet]. Superlattices and Microstructures. 2017 ; 104 232-239.[citado 2025 nov. 03 ] Available from: http://www.sciencedirect.com/science/article/pii/S0749603617300745?via*3Dihub
Trabalho de evento-resumo
Infrared photodetectors based on submonolayer quantum dots (2016)
Alzeidan, Ahmad; Claro, Marcel Santos; Quivy, Alain Andre
Source: Posters - Resumo. Conference titles: Encontro de Física. Unidade: IF
Subjects: FÍSICA DA MATÉRIA CONDENSADA, FOTODETECTORES, POÇOS QUÂNTICOS
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ABNT
ALZEIDAN, Ahmad e CLARO, Marcel Santos e QUIVY, Alain Andre. Infrared photodetectors based on submonolayer quantum dots. 2016, Anais.. São Paulo: SBF, 2016. Disponível em: http://www1.sbfisica.org.br/eventos/enf/2016/sys/resumos/R1690-1.pdf. Acesso em: 03 nov. 2025.
APA
Alzeidan, A., Claro, M. S., & Quivy, A. A. (2016). Infrared photodetectors based on submonolayer quantum dots. In Posters - Resumo. São Paulo: SBF. Recuperado de http://www1.sbfisica.org.br/eventos/enf/2016/sys/resumos/R1690-1.pdf
NLM
Alzeidan A, Claro MS, Quivy AA. Infrared photodetectors based on submonolayer quantum dots [Internet]. Posters - Resumo. 2016 ;[citado 2025 nov. 03 ] Available from: http://www1.sbfisica.org.br/eventos/enf/2016/sys/resumos/R1690-1.pdf
Vancouver
Alzeidan A, Claro MS, Quivy AA. Infrared photodetectors based on submonolayer quantum dots [Internet]. Posters - Resumo. 2016 ;[citado 2025 nov. 03 ] Available from: http://www1.sbfisica.org.br/eventos/enf/2016/sys/resumos/R1690-1.pdf
Artigo de periodico
Modeling the 3D 'IN' profile of 'IN' IND. x''GA' IND. 1−x''AS'/'GA''AS' quantum dots (2016)
Tanaka, R. Y.; Abe, N. M.; Passaro, A.; Silva, Euzi Conceicao Fernandes da; Quivy, Alain Andre
Source: Journal of Physics D: Applied Physics. Unidade: IF
Subjects: MICROSCOPIA, ESTRUTURA ELETRÔNICA
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ABNT
TANAKA, R. Y. et al. Modeling the 3D 'IN' profile of 'IN' IND. x''GA' IND. 1−x''AS'/'GA''AS' quantum dots. Journal of Physics D: Applied Physics, v. 49, n. ju 2016, p. 215101, 2016Tradução . . Disponível em: http://iopscience.iop.org/article/10.1088/0022-3727/49/21/215101. Acesso em: 03 nov. 2025.
APA
Tanaka, R. Y., Abe, N. M., Passaro, A., Silva, E. C. F. da, & Quivy, A. A. (2016). Modeling the 3D 'IN' profile of 'IN' IND. x''GA' IND. 1−x''AS'/'GA''AS' quantum dots. Journal of Physics D: Applied Physics, 49( ju 2016), 215101. doi:10.1088/0022-3727/49/21/215101
NLM
Tanaka RY, Abe NM, Passaro A, Silva ECF da, Quivy AA. Modeling the 3D 'IN' profile of 'IN' IND. x''GA' IND. 1−x''AS'/'GA''AS' quantum dots [Internet]. Journal of Physics D: Applied Physics. 2016 ; 49( ju 2016): 215101.[citado 2025 nov. 03 ] Available from: http://iopscience.iop.org/article/10.1088/0022-3727/49/21/215101
Vancouver
Tanaka RY, Abe NM, Passaro A, Silva ECF da, Quivy AA. Modeling the 3D 'IN' profile of 'IN' IND. x''GA' IND. 1−x''AS'/'GA''AS' quantum dots [Internet]. Journal of Physics D: Applied Physics. 2016 ; 49( ju 2016): 215101.[citado 2025 nov. 03 ] Available from: http://iopscience.iop.org/article/10.1088/0022-3727/49/21/215101
Artigo de periodico
Computation of dark current in QWIPs using a modelling based on ehrenfest theorem (2015)
Pedroso, D. M.; Passaro, A.; Dacal, L. C. O.; Vieira, G. S.; Silva, Euzi Conceição Fernandes da; Quivy, Alain Andre
Source: JOURNAL OF PHYSICS D: APPLIED PHYSICS. Unidade: IF
Subjects: FOTODETECTORES, SEMICONDUTORES
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ABNT
PEDROSO, D. M. et al. Computation of dark current in QWIPs using a modelling based on ehrenfest theorem. JOURNAL OF PHYSICS D: APPLIED PHYSICS, v. 48, n. 36, p. se 2015, 2015Tradução . . Disponível em: https://doi.org/10.1088/0022-3727/48/36/365102. Acesso em: 03 nov. 2025.
APA
Pedroso, D. M., Passaro, A., Dacal, L. C. O., Vieira, G. S., Silva, E. C. F. da, & Quivy, A. A. (2015). Computation of dark current in QWIPs using a modelling based on ehrenfest theorem. JOURNAL OF PHYSICS D: APPLIED PHYSICS, 48( 36), se 2015. doi:10.1088/0022-3727/48/36/365102
NLM
Pedroso DM, Passaro A, Dacal LCO, Vieira GS, Silva ECF da, Quivy AA. Computation of dark current in QWIPs using a modelling based on ehrenfest theorem [Internet]. JOURNAL OF PHYSICS D: APPLIED PHYSICS. 2015 ; 48( 36): se 2015.[citado 2025 nov. 03 ] Available from: https://doi.org/10.1088/0022-3727/48/36/365102
Vancouver
Pedroso DM, Passaro A, Dacal LCO, Vieira GS, Silva ECF da, Quivy AA. Computation of dark current in QWIPs using a modelling based on ehrenfest theorem [Internet]. JOURNAL OF PHYSICS D: APPLIED PHYSICS. 2015 ; 48( 36): se 2015.[citado 2025 nov. 03 ] Available from: https://doi.org/10.1088/0022-3727/48/36/365102
Artigo de periodico
Modeling noise in superlattice quantum-well infrared photodetectors (2014)
Fernandes, Fernando Massa; Claro, Marcel Santos; Silva, Euzi Conceição Fernandes da; Quivy, Alain Andre
Source: JOURNAL OF PHYSICS D: APPLIED PHYSICS. Unidade: IF
Subjects: FOTODETECTORES, CAMPO ELETROMAGNÉTICO
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ABNT
FERNANDES, Fernando Massa et al. Modeling noise in superlattice quantum-well infrared photodetectors. JOURNAL OF PHYSICS D: APPLIED PHYSICS, v. 47, n. 38, p. 385105, 2014Tradução . . Disponível em: https://doi.org/10.1088/0022-3727/47/38/385105. Acesso em: 03 nov. 2025.
APA
Fernandes, F. M., Claro, M. S., Silva, E. C. F. da, & Quivy, A. A. (2014). Modeling noise in superlattice quantum-well infrared photodetectors. JOURNAL OF PHYSICS D: APPLIED PHYSICS, 47( 38), 385105. doi:10.1088/0022-3727/47/38/385105
NLM
Fernandes FM, Claro MS, Silva ECF da, Quivy AA. Modeling noise in superlattice quantum-well infrared photodetectors [Internet]. JOURNAL OF PHYSICS D: APPLIED PHYSICS. 2014 ; 47( 38): 385105.[citado 2025 nov. 03 ] Available from: https://doi.org/10.1088/0022-3727/47/38/385105
Vancouver
Fernandes FM, Claro MS, Silva ECF da, Quivy AA. Modeling noise in superlattice quantum-well infrared photodetectors [Internet]. JOURNAL OF PHYSICS D: APPLIED PHYSICS. 2014 ; 47( 38): 385105.[citado 2025 nov. 03 ] Available from: https://doi.org/10.1088/0022-3727/47/38/385105
Trabalho de evento-resumo
Tunable phase in the spin coherence generation of self-assembled (In,Ga)As quantum dots (2013)
Cordeiro, R C; Vargas, C B; Henriques, André Bohomoletz ; Maia, A D B; Quivy, Alain Andre; Koenraad, P M; Bayer, M
Conference titles: Brazilian Workshop on Semiconductor Physics. Unidade: IF
Subjects: SEMICONDUTORES, MATERIAIS MAGNÉTICOS, POÇOS QUÂNTICOS
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ABNT
CORDEIRO, R C et al. Tunable phase in the spin coherence generation of self-assembled (In,Ga)As quantum dots. 2013, Anais.. São Carlos: UFSCar, 2013. Disponível em: http://www.bwsp16.ifsc.usp.br/index.php?option=com_abstract&view=viewabstract&absid=115. Acesso em: 03 nov. 2025.
APA
Cordeiro, R. C., Vargas, C. B., Henriques, A. B., Maia, A. D. B., Quivy, A. A., Koenraad, P. M., & Bayer, M. (2013). Tunable phase in the spin coherence generation of self-assembled (In,Ga)As quantum dots. In . São Carlos: UFSCar. Recuperado de http://www.bwsp16.ifsc.usp.br/index.php?option=com_abstract&view=viewabstract&absid=115
NLM
Cordeiro RC, Vargas CB, Henriques AB, Maia ADB, Quivy AA, Koenraad PM, Bayer M. Tunable phase in the spin coherence generation of self-assembled (In,Ga)As quantum dots [Internet]. 2013 ;[citado 2025 nov. 03 ] Available from: http://www.bwsp16.ifsc.usp.br/index.php?option=com_abstract&view=viewabstract&absid=115
Vancouver
Cordeiro RC, Vargas CB, Henriques AB, Maia ADB, Quivy AA, Koenraad PM, Bayer M. Tunable phase in the spin coherence generation of self-assembled (In,Ga)As quantum dots [Internet]. 2013 ;[citado 2025 nov. 03 ] Available from: http://www.bwsp16.ifsc.usp.br/index.php?option=com_abstract&view=viewabstract&absid=115
Artigo de periodico
Influence of bimodal distribution and excited state emission on photoluminescence spectra of 'IN''AS' self-assembled quantum dots (2013)
Franchello, Flavio; Souza, Leonardo D. de; Laureto, Edson; Dias, Ivan F. L.; Duarte, Jose L.; Quivy, Alain Andre
Source: JOURNAL OF LUMINESCENCE. Unidade: IF
Subjects: LUMINESCÊNCIA, LASER
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ABNT
FRANCHELLO, Flavio et al. Influence of bimodal distribution and excited state emission on photoluminescence spectra of 'IN''AS' self-assembled quantum dots. JOURNAL OF LUMINESCENCE, v. 137, p. 22-27, 2013Tradução . . Disponível em: https://doi.org/10.1016/j.jlumin.2012.12.062. Acesso em: 03 nov. 2025.
APA
Franchello, F., Souza, L. D. de, Laureto, E., Dias, I. F. L., Duarte, J. L., & Quivy, A. A. (2013). Influence of bimodal distribution and excited state emission on photoluminescence spectra of 'IN''AS' self-assembled quantum dots. JOURNAL OF LUMINESCENCE, 137, 22-27. doi:10.1016/j.jlumin.2012.12.062
NLM
Franchello F, Souza LD de, Laureto E, Dias IFL, Duarte JL, Quivy AA. Influence of bimodal distribution and excited state emission on photoluminescence spectra of 'IN''AS' self-assembled quantum dots [Internet]. JOURNAL OF LUMINESCENCE. 2013 ; 137 22-27.[citado 2025 nov. 03 ] Available from: https://doi.org/10.1016/j.jlumin.2012.12.062
Vancouver
Franchello F, Souza LD de, Laureto E, Dias IFL, Duarte JL, Quivy AA. Influence of bimodal distribution and excited state emission on photoluminescence spectra of 'IN''AS' self-assembled quantum dots [Internet]. JOURNAL OF LUMINESCENCE. 2013 ; 137 22-27.[citado 2025 nov. 03 ] Available from: https://doi.org/10.1016/j.jlumin.2012.12.062
Artigo de periodico
Simulation of the electronic properties of 'IN' IND. x''GA' IND. 1−x' 'AS' quantum dots and their wetting layer under the influence of indium segregation (2013)
Maia, Álvaro Diego Bernardino; Aquino, V. M. de; Dias, I. F. L.; Silva, Euzi Conceição Fernandes da; Quivy, Alain Andre; Bindilatti, Valdir
Source: JOURNAL OF APPLIED PHYSICS. Unidade: IF
Subjects: FOTODETECTORES, ÁTOMOS
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ABNT
MAIA, Álvaro Diego Bernardino et al. Simulation of the electronic properties of 'IN' IND. x''GA' IND. 1−x' 'AS' quantum dots and their wetting layer under the influence of indium segregation. JOURNAL OF APPLIED PHYSICS, v. 114, n. 8, p. 083708, 2013Tradução . . Disponível em: https://repositorio.usp.br/directbitstream/431f6fc1-75d5-4f3e-b13e-0af926fa3796/1.4818610.pdf. Acesso em: 03 nov. 2025.
APA
Maia, Á. D. B., Aquino, V. M. de, Dias, I. F. L., Silva, E. C. F. da, Quivy, A. A., & Bindilatti, V. (2013). Simulation of the electronic properties of 'IN' IND. x''GA' IND. 1−x' 'AS' quantum dots and their wetting layer under the influence of indium segregation. JOURNAL OF APPLIED PHYSICS, 114( 8), 083708. Recuperado de https://repositorio.usp.br/directbitstream/431f6fc1-75d5-4f3e-b13e-0af926fa3796/1.4818610.pdf
NLM
Maia ÁDB, Aquino VM de, Dias IFL, Silva ECF da, Quivy AA, Bindilatti V. Simulation of the electronic properties of 'IN' IND. x''GA' IND. 1−x' 'AS' quantum dots and their wetting layer under the influence of indium segregation [Internet]. JOURNAL OF APPLIED PHYSICS. 2013 ; 114( 8): 083708.[citado 2025 nov. 03 ] Available from: https://repositorio.usp.br/directbitstream/431f6fc1-75d5-4f3e-b13e-0af926fa3796/1.4818610.pdf
Vancouver
Maia ÁDB, Aquino VM de, Dias IFL, Silva ECF da, Quivy AA, Bindilatti V. Simulation of the electronic properties of 'IN' IND. x''GA' IND. 1−x' 'AS' quantum dots and their wetting layer under the influence of indium segregation [Internet]. JOURNAL OF APPLIED PHYSICS. 2013 ; 114( 8): 083708.[citado 2025 nov. 03 ] Available from: https://repositorio.usp.br/directbitstream/431f6fc1-75d5-4f3e-b13e-0af926fa3796/1.4818610.pdf
Artigo de periodico
Exciton behavior in GaAs/AlGaAs coupled double quantum wells with interface disorder (2010)
Lopes, E M; Duarte, J L; Poças, L C; Dias, I. F. L; Laureto, E; Quivy, Alain Andre; Lamas, Tomas Eriksson
Source: JournalofLuminescence. Unidade: IF
Assunto: FOTOLUMINESCÊNCIA
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ABNT
LOPES, E M et al. Exciton behavior in GaAs/AlGaAs coupled double quantum wells with interface disorder. JournalofLuminescence, v. 130, n. 3, 2010Tradução . . Disponível em: https://doi.org/10.1016/j.jlumin.2009.10.013. Acesso em: 03 nov. 2025.
APA
Lopes, E. M., Duarte, J. L., Poças, L. C., Dias, I. F. L., Laureto, E., Quivy, A. A., & Lamas, T. E. (2010). Exciton behavior in GaAs/AlGaAs coupled double quantum wells with interface disorder. JournalofLuminescence, 130( 3). doi:10.1016/j.jlumin.2009.10.013
NLM
Lopes EM, Duarte JL, Poças LC, Dias IFL, Laureto E, Quivy AA, Lamas TE. Exciton behavior in GaAs/AlGaAs coupled double quantum wells with interface disorder [Internet]. JournalofLuminescence. 2010 ;130( 3):[citado 2025 nov. 03 ] Available from: https://doi.org/10.1016/j.jlumin.2009.10.013
Vancouver
Lopes EM, Duarte JL, Poças LC, Dias IFL, Laureto E, Quivy AA, Lamas TE. Exciton behavior in GaAs/AlGaAs coupled double quantum wells with interface disorder [Internet]. JournalofLuminescence. 2010 ;130( 3):[citado 2025 nov. 03 ] Available from: https://doi.org/10.1016/j.jlumin.2009.10.013
Artigo de periodico
Study of the influence of indium segregation on the optical properties of InGaAs/GaAs quantum wells via split-operator method (2010)
Martini, S; Manzoli, J E; Quivy, Alain Andre
Source: Journal of Vacuum Science & Technology B. Unidade: IF
Assunto: FOTOLUMINESCÊNCIA
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ABNT
MARTINI, S e MANZOLI, J E e QUIVY, Alain Andre. Study of the influence of indium segregation on the optical properties of InGaAs/GaAs quantum wells via split-operator method. Journal of Vacuum Science & Technology B, v. 28, n. 2, 2010Tradução . . Disponível em: https://doi.org/10.1116/1.3301612. Acesso em: 03 nov. 2025.
APA
Martini, S., Manzoli, J. E., & Quivy, A. A. (2010). Study of the influence of indium segregation on the optical properties of InGaAs/GaAs quantum wells via split-operator method. Journal of Vacuum Science & Technology B, 28( 2). doi:10.1116/1.3301612
NLM
Martini S, Manzoli JE, Quivy AA. Study of the influence of indium segregation on the optical properties of InGaAs/GaAs quantum wells via split-operator method [Internet]. Journal of Vacuum Science & Technology B. 2010 ; 28( 2):[citado 2025 nov. 03 ] Available from: https://doi.org/10.1116/1.3301612
Vancouver
Martini S, Manzoli JE, Quivy AA. Study of the influence of indium segregation on the optical properties of InGaAs/GaAs quantum wells via split-operator method [Internet]. Journal of Vacuum Science & Technology B. 2010 ; 28( 2):[citado 2025 nov. 03 ] Available from: https://doi.org/10.1116/1.3301612
Artigo de periodico
Maximization of the InAs quantum-dot density through the growth of an intentionally non-homogeneous sample (2002)
Silva, M J; Quivy, Alain Andre; González-Borrero, Pedro Pablo; Marega Junior, Euclydes
Source: Journal of Crystal Growth. Unidades: IF, IFSC
Assunto: SEMICONDUTORES (FÍSICO-QUÍMICA)
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ABNT
SILVA, M J et al. Maximization of the InAs quantum-dot density through the growth of an intentionally non-homogeneous sample. Journal of Crystal Growth, v. 236, n. 1-3, p. 41-45, 2002Tradução . . Disponível em: https://doi.org/10.1016/s0022-0248(01)02109-1. Acesso em: 03 nov. 2025.
APA
Silva, M. J., Quivy, A. A., González-Borrero, P. P., & Marega Junior, E. (2002). Maximization of the InAs quantum-dot density through the growth of an intentionally non-homogeneous sample. Journal of Crystal Growth, 236( 1-3), 41-45. doi:10.1016/s0022-0248(01)02109-1
NLM
Silva MJ, Quivy AA, González-Borrero PP, Marega Junior E. Maximization of the InAs quantum-dot density through the growth of an intentionally non-homogeneous sample [Internet]. Journal of Crystal Growth. 2002 ;236( 1-3): 41-45.[citado 2025 nov. 03 ] Available from: https://doi.org/10.1016/s0022-0248(01)02109-1
Vancouver
Silva MJ, Quivy AA, González-Borrero PP, Marega Junior E. Maximization of the InAs quantum-dot density through the growth of an intentionally non-homogeneous sample [Internet]. Journal of Crystal Growth. 2002 ;236( 1-3): 41-45.[citado 2025 nov. 03 ] Available from: https://doi.org/10.1016/s0022-0248(01)02109-1
Artigo de periodico
Atomic-force microscopy study of self-assembled InAs quantum dots along their complete evolution cycle (2002)
Silva, M. J. da; Quivy, Alain Andre; González-Borrero, P. P.; Marega Junior, Euclydes ; Leite, J. R.
Source: Journal of Crystal Growth. Unidades: IF, IFSC
Assunto: SEMICONDUTORES (FÍSICO-QUÍMICA)
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ABNT
SILVA, M. J. da et al. Atomic-force microscopy study of self-assembled InAs quantum dots along their complete evolution cycle. Journal of Crystal Growth, v. 241, n. 1-2, p. 19-30, 2002Tradução . . Disponível em: https://doi.org/10.1016/s0022-0248(02)00947-8. Acesso em: 03 nov. 2025.
APA
Silva, M. J. da, Quivy, A. A., González-Borrero, P. P., Marega Junior, E., & Leite, J. R. (2002). Atomic-force microscopy study of self-assembled InAs quantum dots along their complete evolution cycle. Journal of Crystal Growth, 241( 1-2), 19-30. doi:10.1016/s0022-0248(02)00947-8
NLM
Silva MJ da, Quivy AA, González-Borrero PP, Marega Junior E, Leite JR. Atomic-force microscopy study of self-assembled InAs quantum dots along their complete evolution cycle [Internet]. Journal of Crystal Growth. 2002 ;241( 1-2): 19-30.[citado 2025 nov. 03 ] Available from: https://doi.org/10.1016/s0022-0248(02)00947-8
Vancouver
Silva MJ da, Quivy AA, González-Borrero PP, Marega Junior E, Leite JR. Atomic-force microscopy study of self-assembled InAs quantum dots along their complete evolution cycle [Internet]. Journal of Crystal Growth. 2002 ;241( 1-2): 19-30.[citado 2025 nov. 03 ] Available from: https://doi.org/10.1016/s0022-0248(02)00947-8

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