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Artigo de periodico
Charge capture in 'AL''GA''AS' / 'GA''AS' heterostructures with disordered antidot lattice (1995)
Basmaji, Pierre; Gusev, G M; Lubyshev, D I; Silva, Marcelo de Assumpção Pereira da ; Rossi, J C; Nastaushev, Y V; Baklanov, M R
Source: Materials Science and Engineering B. Unidade: IFSC
Subjects: MATÉRIA CONDENSADA, MATÉRIA CONDENSADA
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ABNT
BASMAJI, Pierre et al. Charge capture in 'AL''GA''AS' / 'GA''AS' heterostructures with disordered antidot lattice. Materials Science and Engineering B, v. 35, p. 322-4, 1995Tradução . . Acesso em: 07 out. 2024.
APA
Basmaji, P., Gusev, G. M., Lubyshev, D. I., Silva, M. de A. P. da, Rossi, J. C., Nastaushev, Y. V., & Baklanov, M. R. (1995). Charge capture in 'AL''GA''AS' / 'GA''AS' heterostructures with disordered antidot lattice. Materials Science and Engineering B, 35, 322-4.
NLM
Basmaji P, Gusev GM, Lubyshev DI, Silva M de AP da, Rossi JC, Nastaushev YV, Baklanov MR. Charge capture in 'AL''GA''AS' / 'GA''AS' heterostructures with disordered antidot lattice. Materials Science and Engineering B. 1995 ;35 322-4.[citado 2024 out. 07 ]
Vancouver
Basmaji P, Gusev GM, Lubyshev DI, Silva M de AP da, Rossi JC, Nastaushev YV, Baklanov MR. Charge capture in 'AL''GA''AS' / 'GA''AS' heterostructures with disordered antidot lattice. Materials Science and Engineering B. 1995 ;35 322-4.[citado 2024 out. 07 ]
Artigo de periodico
Determination of porous silicon film parameters by polarized light reflectance measurements (1993)
Basmaji, Pierre; Bagnato, Vanderlei Salvador ; Grivickas, V; Surdutovich, G I; Vitlina, R
Source: Thin Solid Films. Unidade: IFSC
Assunto: MATÉRIA CONDENSADA (PROPRIEDADES ELÉTRICAS)
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
BASMAJI, Pierre et al. Determination of porous silicon film parameters by polarized light reflectance measurements. Thin Solid Films, v. 223, n. 1 , p. 131-6, 1993Tradução . . Disponível em: https://doi.org/10.1016/0040-6090(93)90074-y. Acesso em: 07 out. 2024.
APA
Basmaji, P., Bagnato, V. S., Grivickas, V., Surdutovich, G. I., & Vitlina, R. (1993). Determination of porous silicon film parameters by polarized light reflectance measurements. Thin Solid Films, 223( 1 ), 131-6. doi:10.1016/0040-6090(93)90074-y
NLM
Basmaji P, Bagnato VS, Grivickas V, Surdutovich GI, Vitlina R. Determination of porous silicon film parameters by polarized light reflectance measurements [Internet]. Thin Solid Films. 1993 ;223( 1 ): 131-6.[citado 2024 out. 07 ] Available from: https://doi.org/10.1016/0040-6090(93)90074-y
Vancouver
Basmaji P, Bagnato VS, Grivickas V, Surdutovich GI, Vitlina R. Determination of porous silicon film parameters by polarized light reflectance measurements [Internet]. Thin Solid Films. 1993 ;223( 1 ): 131-6.[citado 2024 out. 07 ] Available from: https://doi.org/10.1016/0040-6090(93)90074-y
Artigo de periodico
Optical absorption in porous silicon of high porosity (1993)
Grivickas, V; Basmaji, Pierre
Source: Thin Solid Films. Unidade: IFSC
Subjects: MATÉRIA CONDENSADA, CIRCUITOS ELETRÔNICOS, MATÉRIA CONDENSADA (PROPRIEDADES ELÉTRICAS), MATÉRIA CONDENSADA
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ABNT
GRIVICKAS, V e BASMAJI, Pierre. Optical absorption in porous silicon of high porosity. Thin Solid Films, v. 235, p. 234-8, 1993Tradução . . Disponível em: https://doi.org/10.1016/0040-6090(93)90271-p. Acesso em: 07 out. 2024.
APA
Grivickas, V., & Basmaji, P. (1993). Optical absorption in porous silicon of high porosity. Thin Solid Films, 235, 234-8. doi:10.1016/0040-6090(93)90271-p
NLM
Grivickas V, Basmaji P. Optical absorption in porous silicon of high porosity [Internet]. Thin Solid Films. 1993 ;235 234-8.[citado 2024 out. 07 ] Available from: https://doi.org/10.1016/0040-6090(93)90271-p
Vancouver
Grivickas V, Basmaji P. Optical absorption in porous silicon of high porosity [Internet]. Thin Solid Films. 1993 ;235 234-8.[citado 2024 out. 07 ] Available from: https://doi.org/10.1016/0040-6090(93)90271-p
Artigo de periodico
Optical interband transitions in single and periodically delta-doped 'GA''AS' samples (1990)
Bernussi, A A; Brum, J A; Motisuke, P; Basmaji, Pierre; Siu Li, Máximo ; Hipólito, Oscar
Source: Materials Science Forum. Unidade: IFSC
Subjects: MATÉRIA CONDENSADA, MATÉRIA CONDENSADA
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
BERNUSSI, A A et al. Optical interband transitions in single and periodically delta-doped 'GA''AS' samples. Materials Science Forum, v. 65-6, p. 67-72, 1990Tradução . . Acesso em: 07 out. 2024.
APA
Bernussi, A. A., Brum, J. A., Motisuke, P., Basmaji, P., Siu Li, M., & Hipólito, O. (1990). Optical interband transitions in single and periodically delta-doped 'GA''AS' samples. Materials Science Forum, 65-6, 67-72.
NLM
Bernussi AA, Brum JA, Motisuke P, Basmaji P, Siu Li M, Hipólito O. Optical interband transitions in single and periodically delta-doped 'GA''AS' samples. Materials Science Forum. 1990 ;65-6 67-72.[citado 2024 out. 07 ]
Vancouver
Bernussi AA, Brum JA, Motisuke P, Basmaji P, Siu Li M, Hipólito O. Optical interband transitions in single and periodically delta-doped 'GA''AS' samples. Materials Science Forum. 1990 ;65-6 67-72.[citado 2024 out. 07 ]

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