ReP USP - Resultado da busca

Trabalho de evento-anais periodico
Delocalization-localization transition of plasmons in disordered superlattices (2011)
Pusep, Yuri A ; Rodrigues, A. D.; Sokolov, S. S.
Source: AIP Conference Proceedings. Conference titles: International Conference on Physics of Semiconductors. Unidade: IFSC
Subjects: SEMICONDUTORES, ESPECTROSCOPIA RAMAN, PROPRIEDADES DOS MATERIAIS, ONDAS ELETROMAGNÉTICAS
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ABNT
PUSEP, Yuri A e RODRIGUES, A. D. e SOKOLOV, S. S. Delocalization-localization transition of plasmons in disordered superlattices. AIP Conference Proceedings. College Park: American Institute of Physics - AIP. Disponível em: https://doi.org/10.1063/1.3666429. Acesso em: 02 nov. 2024. , 2011
APA
Pusep, Y. A., Rodrigues, A. D., & Sokolov, S. S. (2011). Delocalization-localization transition of plasmons in disordered superlattices. AIP Conference Proceedings. College Park: American Institute of Physics - AIP. doi:10.1063/1.3666429
NLM
Pusep YA, Rodrigues AD, Sokolov SS. Delocalization-localization transition of plasmons in disordered superlattices [Internet]. AIP Conference Proceedings. 2011 ; 1399 413-414.[citado 2024 nov. 02 ] Available from: https://doi.org/10.1063/1.3666429
Vancouver
Pusep YA, Rodrigues AD, Sokolov SS. Delocalization-localization transition of plasmons in disordered superlattices [Internet]. AIP Conference Proceedings. 2011 ; 1399 413-414.[citado 2024 nov. 02 ] Available from: https://doi.org/10.1063/1.3666429
Trabalho de evento-anais periodico
Optical transitions and carrier relaxation in asymmetric vertically coupled quantum rings (2009)
Piacente, G.; Hai, Guo-Qiang
Source: AIP Conference Proceedings. Conference titles: International Conference on Physics of Semiconductors. Unidade: IFSC
Subjects: SEMICONDUTORES, ÓPTICA (PROPRIEDADES)
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PIACENTE, G. e HAI, Guo-Qiang. Optical transitions and carrier relaxation in asymmetric vertically coupled quantum rings. AIP Conference Proceedings. Melville: American Institute of Physics - AIP. . Acesso em: 02 nov. 2024. , 2009
APA
Piacente, G., & Hai, G. -Q. (2009). Optical transitions and carrier relaxation in asymmetric vertically coupled quantum rings. AIP Conference Proceedings. Melville: American Institute of Physics - AIP.
NLM
Piacente G, Hai G-Q. Optical transitions and carrier relaxation in asymmetric vertically coupled quantum rings. AIP Conference Proceedings. 2009 ; 1199 317-318.[citado 2024 nov. 02 ]
Vancouver
Piacente G, Hai G-Q. Optical transitions and carrier relaxation in asymmetric vertically coupled quantum rings. AIP Conference Proceedings. 2009 ; 1199 317-318.[citado 2024 nov. 02 ]
Trabalho de evento-anais periodico
Miniband effects in short‐period InGaAs/InP superlattices (2007)
Pusep, Yuri A ; Rodrigues, A. Giovanni; Galzerani, J. C.; Cornet, D. M.; Comedi, D.; LaPierre, R. R.
Source: AIP Conference Proceedings. Conference titles: International Conference on the Physics of Semiconductors - ICPS. Unidade: IFSC
Subjects: SEMICONDUTORES, EFEITO RAMAN, DIFRAÇÃO POR RAIOS X, MAGNETISMO, POLARIZAÇÃO
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PUSEP, Yuri A et al. Miniband effects in short‐period InGaAs/InP superlattices. AIP Conference Proceedings. Melville: American Institute of Physics - AIP. Disponível em: https://doi.org/10.1063/1.2729927. Acesso em: 02 nov. 2024. , 2007
APA
Pusep, Y. A., Rodrigues, A. G., Galzerani, J. C., Cornet, D. M., Comedi, D., & LaPierre, R. R. (2007). Miniband effects in short‐period InGaAs/InP superlattices. AIP Conference Proceedings. Melville: American Institute of Physics - AIP. doi:10.1063/1.2729927
NLM
Pusep YA, Rodrigues AG, Galzerani JC, Cornet DM, Comedi D, LaPierre RR. Miniband effects in short‐period InGaAs/InP superlattices [Internet]. AIP Conference Proceedings. 2007 ; 893( 1): 385-386.[citado 2024 nov. 02 ] Available from: https://doi.org/10.1063/1.2729927
Vancouver
Pusep YA, Rodrigues AG, Galzerani JC, Cornet DM, Comedi D, LaPierre RR. Miniband effects in short‐period InGaAs/InP superlattices [Internet]. AIP Conference Proceedings. 2007 ; 893( 1): 385-386.[citado 2024 nov. 02 ] Available from: https://doi.org/10.1063/1.2729927
Trabalho de evento-anais periodico
Ab initio study of GaN/'Mn IND.x' 'Ga IND.i-x' N digital heterostructure (2007)
Marques, M; Ferreira, Luiz Guimarães; Teles, L. K.; Scolfaro, Luisa Maria Ribeiro; Furthmüller, J; Bechstedt, F
Source: AIP Conference Proceedings. Conference titles: 28th International Conference on the Physics of Semiconductors - ICPS 2006. Unidade: IF
Subjects: SEMICONDUTORES, ESTRUTURA ELETRÔNICA, MAGNETISMO
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MARQUES, M et al. Ab initio study of GaN/'Mn IND.x' 'Ga IND.i-x' N digital heterostructure. AIP Conference Proceedings. New York: The Institute. Disponível em: http://scitation.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=APCPCS000893000001001249000001&idtype=cvips&prog=normal. Acesso em: 02 nov. 2024. , 2007
APA
Marques, M., Ferreira, L. G., Teles, L. K., Scolfaro, L. M. R., Furthmüller, J., & Bechstedt, F. (2007). Ab initio study of GaN/'Mn IND.x' 'Ga IND.i-x' N digital heterostructure. AIP Conference Proceedings. New York: The Institute. Recuperado de http://scitation.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=APCPCS000893000001001249000001&idtype=cvips&prog=normal
NLM
Marques M, Ferreira LG, Teles LK, Scolfaro LMR, Furthmüller J, Bechstedt F. Ab initio study of GaN/'Mn IND.x' 'Ga IND.i-x' N digital heterostructure [Internet]. AIP Conference Proceedings. 2007 ; 893 1249-1250.[citado 2024 nov. 02 ] Available from: http://scitation.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=APCPCS000893000001001249000001&idtype=cvips&prog=normal
Vancouver
Marques M, Ferreira LG, Teles LK, Scolfaro LMR, Furthmüller J, Bechstedt F. Ab initio study of GaN/'Mn IND.x' 'Ga IND.i-x' N digital heterostructure [Internet]. AIP Conference Proceedings. 2007 ; 893 1249-1250.[citado 2024 nov. 02 ] Available from: http://scitation.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=APCPCS000893000001001249000001&idtype=cvips&prog=normal
Trabalho de evento-anais periodico
In-segregation measurements by RHEED during growth: comparison between vicinal and nominal substrat (2007)
Martini, S; Quivy, A. A.; Silva, Euzi Conceicao Fernandes da; Marques, E B
Source: AIP Conference Proceedings. Conference titles: 28th International Conference on the Physics of Semiconductors - ICPS 2006. Unidade: IF
Subjects: SEMICONDUTORES, DIFRAÇÃO POR RAIOS X, EPITAXIA POR FEIXE MOLECULAR
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MARTINI, S et al. In-segregation measurements by RHEED during growth: comparison between vicinal and nominal substrat. AIP Conference Proceedings. New York: The Institute. Disponível em: http://scitation.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=APCPCS000893000001000017000001&idtype=cvips&prog=normal. Acesso em: 02 nov. 2024. , 2007
APA
Martini, S., Quivy, A. A., Silva, E. C. F. da, & Marques, E. B. (2007). In-segregation measurements by RHEED during growth: comparison between vicinal and nominal substrat. AIP Conference Proceedings. New York: The Institute. Recuperado de http://scitation.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=APCPCS000893000001000017000001&idtype=cvips&prog=normal
NLM
Martini S, Quivy AA, Silva ECF da, Marques EB. In-segregation measurements by RHEED during growth: comparison between vicinal and nominal substrat [Internet]. AIP Conference Proceedings. 2007 ; 893 17-18.[citado 2024 nov. 02 ] Available from: http://scitation.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=APCPCS000893000001000017000001&idtype=cvips&prog=normal
Vancouver
Martini S, Quivy AA, Silva ECF da, Marques EB. In-segregation measurements by RHEED during growth: comparison between vicinal and nominal substrat [Internet]. AIP Conference Proceedings. 2007 ; 893 17-18.[citado 2024 nov. 02 ] Available from: http://scitation.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=APCPCS000893000001000017000001&idtype=cvips&prog=normal
Trabalho de evento-anais periodico
Theoretical study of magnetic properties of VN, CrN, MnN, FeN and CoN under strain (2007)
Ribeiro Junior, M; Marques, M; Scolfaro, Luisa Maria Ribeiro; Teles, L. K.; Ferreira, Luiz Guimarães
Source: AIP Conference Proceedings. Conference titles: 28th International Conference on the Physics of Semiconductors - ICPS 2006. Unidade: IF
Subjects: SEMICONDUTORES, ESTRUTURA ELETRÔNICA, MAGNETISMO, MATERIAIS MAGNÉTICOS
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RIBEIRO JUNIOR, M et al. Theoretical study of magnetic properties of VN, CrN, MnN, FeN and CoN under strain. AIP Conference Proceedings. New York: The Institute. Disponível em: http://scitation.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=APCPCS000893000001001227000001&idtype=cvips&prog=normal. Acesso em: 02 nov. 2024. , 2007
APA
Ribeiro Junior, M., Marques, M., Scolfaro, L. M. R., Teles, L. K., & Ferreira, L. G. (2007). Theoretical study of magnetic properties of VN, CrN, MnN, FeN and CoN under strain. AIP Conference Proceedings. New York: The Institute. Recuperado de http://scitation.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=APCPCS000893000001001227000001&idtype=cvips&prog=normal
NLM
Ribeiro Junior M, Marques M, Scolfaro LMR, Teles LK, Ferreira LG. Theoretical study of magnetic properties of VN, CrN, MnN, FeN and CoN under strain [Internet]. AIP Conference Proceedings. 2007 ; 893 1227-1228.[citado 2024 nov. 02 ] Available from: http://scitation.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=APCPCS000893000001001227000001&idtype=cvips&prog=normal
Vancouver
Ribeiro Junior M, Marques M, Scolfaro LMR, Teles LK, Ferreira LG. Theoretical study of magnetic properties of VN, CrN, MnN, FeN and CoN under strain [Internet]. AIP Conference Proceedings. 2007 ; 893 1227-1228.[citado 2024 nov. 02 ] Available from: http://scitation.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=APCPCS000893000001001227000001&idtype=cvips&prog=normal
Trabalho de evento-anais periodico
Exchange interaction effects on the optical properties of 'Eu IND.x' 'Pb IND.1-x' Te (2007)
Henriques, André Bohomoletz; Galgano, G D; Bíaz, B; Rappi, P H O; Abramof, E
Source: AIP Conference Proceedings. Conference titles: 28th International Conference on the Physics of Semiconductors - ICPS 2006. Unidade: IF
Subjects: SEMICONDUTORES, FERROMAGNETISMO, MAGNETISMO, MATERIAIS MAGNÉTICOS
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HENRIQUES, André Bohomoletz et al. Exchange interaction effects on the optical properties of 'Eu IND.x' 'Pb IND.1-x' Te. AIP Conference Proceedings. New York: The Institute. Disponível em: http://scitation.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=APCPCS000893000001001233000001&idtype=cvips&prog=normal. Acesso em: 02 nov. 2024. , 2007
APA
Henriques, A. B., Galgano, G. D., Bíaz, B., Rappi, P. H. O., & Abramof, E. (2007). Exchange interaction effects on the optical properties of 'Eu IND.x' 'Pb IND.1-x' Te. AIP Conference Proceedings. New York: The Institute. Recuperado de http://scitation.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=APCPCS000893000001001233000001&idtype=cvips&prog=normal
NLM
Henriques AB, Galgano GD, Bíaz B, Rappi PHO, Abramof E. Exchange interaction effects on the optical properties of 'Eu IND.x' 'Pb IND.1-x' Te [Internet]. AIP Conference Proceedings. 2007 ; 893 1233-1234.[citado 2024 nov. 02 ] Available from: http://scitation.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=APCPCS000893000001001233000001&idtype=cvips&prog=normal
Vancouver
Henriques AB, Galgano GD, Bíaz B, Rappi PHO, Abramof E. Exchange interaction effects on the optical properties of 'Eu IND.x' 'Pb IND.1-x' Te [Internet]. AIP Conference Proceedings. 2007 ; 893 1233-1234.[citado 2024 nov. 02 ] Available from: http://scitation.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=APCPCS000893000001001233000001&idtype=cvips&prog=normal
Trabalho de evento-anais periodico
Optical properties and carrier effective masses of Rutile 'SnO IND.2' as obtained from full relativistic ab initio calculations (2007)
Lino, A T; Borges, P D; Scolfaro, Luisa Maria Ribeiro; Rodrigues, S C P; Silva Junior, E F da
Source: AIP Conference Proceedings. Conference titles: 28th International Conference on the Physics of Semiconductors - ICPS 2006. Unidades: IF, EP
Subjects: SEMICONDUTORES, ESTRUTURA ELETRÔNICA
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ABNT
LINO, A T et al. Optical properties and carrier effective masses of Rutile 'SnO IND.2' as obtained from full relativistic ab initio calculations. AIP Conference Proceedings. New York: The Institute. Disponível em: http://scitation.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=APCPCS000893000001000259000001&idtype=cvips&prog=normal. Acesso em: 02 nov. 2024. , 2007
APA
Lino, A. T., Borges, P. D., Scolfaro, L. M. R., Rodrigues, S. C. P., & Silva Junior, E. F. da. (2007). Optical properties and carrier effective masses of Rutile 'SnO IND.2' as obtained from full relativistic ab initio calculations. AIP Conference Proceedings. New York: The Institute. Recuperado de http://scitation.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=APCPCS000893000001000259000001&idtype=cvips&prog=normal
NLM
Lino AT, Borges PD, Scolfaro LMR, Rodrigues SCP, Silva Junior EF da. Optical properties and carrier effective masses of Rutile 'SnO IND.2' as obtained from full relativistic ab initio calculations [Internet]. AIP Conference Proceedings. 2007 ; 893 529-530.[citado 2024 nov. 02 ] Available from: http://scitation.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=APCPCS000893000001000259000001&idtype=cvips&prog=normal
Vancouver
Lino AT, Borges PD, Scolfaro LMR, Rodrigues SCP, Silva Junior EF da. Optical properties and carrier effective masses of Rutile 'SnO IND.2' as obtained from full relativistic ab initio calculations [Internet]. AIP Conference Proceedings. 2007 ; 893 529-530.[citado 2024 nov. 02 ] Available from: http://scitation.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=APCPCS000893000001000259000001&idtype=cvips&prog=normal
Trabalho de evento-anais periodico
Coherence of elementary excitations in disordered electron systems (2007)
Pusep, Yuri A ; Ribeiro, M.; Galzerani, J. C.
Source: AIP Conference Proceedings. Conference titles: International Conference on the Physics of Semiconductors - ICPS. Unidade: IFSC
Subjects: FÍSICA DO ESTADO SÓLIDO, SEMICONDUTORES, EFEITO RAMAN
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ABNT
PUSEP, Yuri A e RIBEIRO, M. e GALZERANI, J. C. Coherence of elementary excitations in disordered electron systems. AIP Conference Proceedings. Melville: American Institute of Physics - AIP. Disponível em: https://doi.org/10.1063/1.2729838. Acesso em: 02 nov. 2024. , 2007
APA
Pusep, Y. A., Ribeiro, M., & Galzerani, J. C. (2007). Coherence of elementary excitations in disordered electron systems. AIP Conference Proceedings. Melville: American Institute of Physics - AIP. doi:10.1063/1.2729838
NLM
Pusep YA, Ribeiro M, Galzerani JC. Coherence of elementary excitations in disordered electron systems [Internet]. AIP Conference Proceedings. 2007 ; 893( 1): 199-200.[citado 2024 nov. 02 ] Available from: https://doi.org/10.1063/1.2729838
Vancouver
Pusep YA, Ribeiro M, Galzerani JC. Coherence of elementary excitations in disordered electron systems [Internet]. AIP Conference Proceedings. 2007 ; 893( 1): 199-200.[citado 2024 nov. 02 ] Available from: https://doi.org/10.1063/1.2729838
Trabalho de evento-anais periodico
Frequency dependence of the dielectric constants and of the reflectivity for 'HfC IND.2' and 'ZrC IND.2' from first-principles calculations (2007)
Silva, C C; Alves, H W Leite; Scolfaro, Luisa Maria Ribeiro
Source: AIP Conference Proceedings. Conference titles: 28th International Conference on the Physics of Semiconductors - ICPS 2006. Unidade: IF
Subjects: SEMICONDUTORES, DIELÉTRICOS
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ABNT
SILVA, C C e ALVES, H W Leite e SCOLFARO, Luisa Maria Ribeiro. Frequency dependence of the dielectric constants and of the reflectivity for 'HfC IND.2' and 'ZrC IND.2' from first-principles calculations. AIP Conference Proceedings. New York: The Institute. Disponível em: http://scitation.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=APCPCS000893000001000311000001&idtype=cvips&prog=normal. Acesso em: 02 nov. 2024. , 2007
APA
Silva, C. C., Alves, H. W. L., & Scolfaro, L. M. R. (2007). Frequency dependence of the dielectric constants and of the reflectivity for 'HfC IND.2' and 'ZrC IND.2' from first-principles calculations. AIP Conference Proceedings. New York: The Institute. Recuperado de http://scitation.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=APCPCS000893000001000311000001&idtype=cvips&prog=normal
NLM
Silva CC, Alves HWL, Scolfaro LMR. Frequency dependence of the dielectric constants and of the reflectivity for 'HfC IND.2' and 'ZrC IND.2' from first-principles calculations [Internet]. AIP Conference Proceedings. 2007 ; 893 311-312.[citado 2024 nov. 02 ] Available from: http://scitation.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=APCPCS000893000001000311000001&idtype=cvips&prog=normal
Vancouver
Silva CC, Alves HWL, Scolfaro LMR. Frequency dependence of the dielectric constants and of the reflectivity for 'HfC IND.2' and 'ZrC IND.2' from first-principles calculations [Internet]. AIP Conference Proceedings. 2007 ; 893 311-312.[citado 2024 nov. 02 ] Available from: http://scitation.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=APCPCS000893000001000311000001&idtype=cvips&prog=normal
Trabalho de evento-anais periodico
Spin-polarized charge densities in (In,Ga,Mn)As-based diluted magnetic semiconductor ternary and quaternary alloy heterostructures (2005)
Sipahi, Guilherme Matos ; Rodrigues, S. C. P.; Scolfaro, Luisa Maria Ribeiro; Lima, I. C. da Cunha; Leite, J. R.
Source: AIP Conference Proceedings. Conference titles: International Conference on the Physics of Semiconductors - ICPS. Unidades: IFSC, IF
Subjects: SEMICONDUTORES, SUPERFÍCIE FÍSICA, MATÉRIA CONDENSADA, MAGNETISMO, POLARIZAÇÃO
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ABNT
SIPAHI, Guilherme Matos et al. Spin-polarized charge densities in (In,Ga,Mn)As-based diluted magnetic semiconductor ternary and quaternary alloy heterostructures. AIP Conference Proceedings. Melville: American Institute of Physics - AIP. Disponível em: https://doi.org/10.1063/1.1994119. Acesso em: 02 nov. 2024. , 2005
APA
Sipahi, G. M., Rodrigues, S. C. P., Scolfaro, L. M. R., Lima, I. C. da C., & Leite, J. R. (2005). Spin-polarized charge densities in (In,Ga,Mn)As-based diluted magnetic semiconductor ternary and quaternary alloy heterostructures. AIP Conference Proceedings. Melville: American Institute of Physics - AIP. doi:10.1063/1.1994119
NLM
Sipahi GM, Rodrigues SCP, Scolfaro LMR, Lima IC da C, Leite JR. Spin-polarized charge densities in (In,Ga,Mn)As-based diluted magnetic semiconductor ternary and quaternary alloy heterostructures [Internet]. AIP Conference Proceedings. 2005 ; 772( 1): 323-324.[citado 2024 nov. 02 ] Available from: https://doi.org/10.1063/1.1994119
Vancouver
Sipahi GM, Rodrigues SCP, Scolfaro LMR, Lima IC da C, Leite JR. Spin-polarized charge densities in (In,Ga,Mn)As-based diluted magnetic semiconductor ternary and quaternary alloy heterostructures [Internet]. AIP Conference Proceedings. 2005 ; 772( 1): 323-324.[citado 2024 nov. 02 ] Available from: https://doi.org/10.1063/1.1994119
Trabalho de evento-anais periodico
Quantum interference and localization in disordered GaAs/AlGaAs superlattices (2005)
Pusep, Yuri A
Source: AIP Conference Proceedings. Conference titles: International Conference on the Physics of Semiconductors - ICPS. Unidade: IFSC
Subjects: SEMICONDUTORES, EFEITO RAMAN, DIFRAÇÃO POR RAIOS X, MAGNETISMO, POLARIZAÇÃO
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ABNT
PUSEP, Yuri A. Quantum interference and localization in disordered GaAs/AlGaAs superlattices. AIP Conference Proceedings. Melville: American Institute of Physics - AIP. Disponível em: https://doi.org/10.1063/1.1994451. Acesso em: 02 nov. 2024. , 2005
APA
Pusep, Y. A. (2005). Quantum interference and localization in disordered GaAs/AlGaAs superlattices. AIP Conference Proceedings. Melville: American Institute of Physics - AIP. doi:10.1063/1.1994451
NLM
Pusep YA. Quantum interference and localization in disordered GaAs/AlGaAs superlattices [Internet]. AIP Conference Proceedings. 2005 ; 772( 1): 1007-1008.[citado 2024 nov. 02 ] Available from: https://doi.org/10.1063/1.1994451
Vancouver
Pusep YA. Quantum interference and localization in disordered GaAs/AlGaAs superlattices [Internet]. AIP Conference Proceedings. 2005 ; 772( 1): 1007-1008.[citado 2024 nov. 02 ] Available from: https://doi.org/10.1063/1.1994451
Trabalho de evento-anais periodico
Effect of the electron and hole scattering potentials compensation on optical band edge of heavily doped GaAs/AlGaAs superlattices (2005)
Pusep, Yuri A ; Guimarães, Francisco Eduardo Gontijo ; Ribeiro, M. B.; Arakaki, Haroldo; Souza, Carlos Alberto de; Malzer, S.; Döhler, G. H.
Source: AIP Conference Proceedings. Conference titles: International Conference on the Physics of Semiconductors - ICPS. Unidade: IFSC
Subjects: SEMICONDUTORES, FOTOLUMINESCÊNCIA
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ABNT
PUSEP, Yuri A et al. Effect of the electron and hole scattering potentials compensation on optical band edge of heavily doped GaAs/AlGaAs superlattices. AIP Conference Proceedings. Melville: American Institute of Physics - AIP. Disponível em: https://doi.org/10.1063/1.1994427. Acesso em: 02 nov. 2024. , 2005
APA
Pusep, Y. A., Guimarães, F. E. G., Ribeiro, M. B., Arakaki, H., Souza, C. A. de, Malzer, S., & Döhler, G. H. (2005). Effect of the electron and hole scattering potentials compensation on optical band edge of heavily doped GaAs/AlGaAs superlattices. AIP Conference Proceedings. Melville: American Institute of Physics - AIP. doi:10.1063/1.1994427
NLM
Pusep YA, Guimarães FEG, Ribeiro MB, Arakaki H, Souza CA de, Malzer S, Döhler GH. Effect of the electron and hole scattering potentials compensation on optical band edge of heavily doped GaAs/AlGaAs superlattices [Internet]. AIP Conference Proceedings. 2005 ; 772( 1): 959-960.[citado 2024 nov. 02 ] Available from: https://doi.org/10.1063/1.1994427
Vancouver
Pusep YA, Guimarães FEG, Ribeiro MB, Arakaki H, Souza CA de, Malzer S, Döhler GH. Effect of the electron and hole scattering potentials compensation on optical band edge of heavily doped GaAs/AlGaAs superlattices [Internet]. AIP Conference Proceedings. 2005 ; 772( 1): 959-960.[citado 2024 nov. 02 ] Available from: https://doi.org/10.1063/1.1994427

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