A simple leakage drain current model for accumulation-mode SOI pMOSFETs operating up to 300ºC (2001)
Source: SBMicro 2001: proceedings. Conference titles: International Conference on Microelectronics and Packaging. Unidade: EP
Assunto: CIRCUITOS INTEGRADOS
ABNT
BELLODI, Marcello et al. A simple leakage drain current model for accumulation-mode SOI pMOSFETs operating up to 300ºC. 2001, Anais.. Brasília: SBMicro, 2001. . Acesso em: 09 out. 2024.APA
Bellodi, M., Iniguez, B., Flandre, D., & Martino, J. A. (2001). A simple leakage drain current model for accumulation-mode SOI pMOSFETs operating up to 300ºC. In SBMicro 2001: proceedings. Brasília: SBMicro.NLM
Bellodi M, Iniguez B, Flandre D, Martino JA. A simple leakage drain current model for accumulation-mode SOI pMOSFETs operating up to 300ºC. SBMicro 2001: proceedings. 2001 ;[citado 2024 out. 09 ]Vancouver
Bellodi M, Iniguez B, Flandre D, Martino JA. A simple leakage drain current model for accumulation-mode SOI pMOSFETs operating up to 300ºC. SBMicro 2001: proceedings. 2001 ;[citado 2024 out. 09 ]