ReP USP - Resultado da busca

Artigo de periodico
Impulse and continuous control of peicewise deterministic Markov processes (2000)
Costa, Oswaldo Luiz do Valle ; Raymundo, A. B.
Fonte: Stochastics and Stochastics Reports. Unidade: EP
Assunto: PROCESSOS DE MARKOV
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ABNT
COSTA, Oswaldo Luiz do Valle e RAYMUNDO, A. B. Impulse and continuous control of peicewise deterministic Markov processes. Stochastics and Stochastics Reports, v. 70, p. 75-107, 2000Tradução . . Disponível em: https://doi.org/10.1080/17442500008834246. Acesso em: 15 out. 2024.
APA
Costa, O. L. do V., & Raymundo, A. B. (2000). Impulse and continuous control of peicewise deterministic Markov processes. Stochastics and Stochastics Reports, 70, 75-107. doi:10.1080/17442500008834246
NLM
Costa OL do V, Raymundo AB. Impulse and continuous control of peicewise deterministic Markov processes [Internet]. Stochastics and Stochastics Reports. 2000 ; 70 75-107.[citado 2024 out. 15 ] Available from: https://doi.org/10.1080/17442500008834246
Vancouver
Costa OL do V, Raymundo AB. Impulse and continuous control of peicewise deterministic Markov processes [Internet]. Stochastics and Stochastics Reports. 2000 ; 70 75-107.[citado 2024 out. 15 ] Available from: https://doi.org/10.1080/17442500008834246
Artigo de periodico
Identification of the Jules-Atherton model parameters using random and deterministic searches (2000)
Del Moral Hernandez, Emilio ; Muranaka, Carlos S.; Cardoso, José Roberto
Fonte: Physica B. Unidade: EP
Assunto: MAGNETISMO
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ABNT
DEL MORAL HERNANDEZ, Emilio e MURANAKA, Carlos S. e CARDOSO, José Roberto. Identification of the Jules-Atherton model parameters using random and deterministic searches. Physica B, v. 275, p. 212-215, 2000Tradução . . Disponível em: https://doi.org/10.1016/s0921-4526(99)00766-8. Acesso em: 15 out. 2024.
APA
Del Moral Hernandez, E., Muranaka, C. S., & Cardoso, J. R. (2000). Identification of the Jules-Atherton model parameters using random and deterministic searches. Physica B, 275, 212-215. doi:10.1016/s0921-4526(99)00766-8
NLM
Del Moral Hernandez E, Muranaka CS, Cardoso JR. Identification of the Jules-Atherton model parameters using random and deterministic searches [Internet]. Physica B. 2000 ; 275 212-215.[citado 2024 out. 15 ] Available from: https://doi.org/10.1016/s0921-4526(99)00766-8
Vancouver
Del Moral Hernandez E, Muranaka CS, Cardoso JR. Identification of the Jules-Atherton model parameters using random and deterministic searches [Internet]. Physica B. 2000 ; 275 212-215.[citado 2024 out. 15 ] Available from: https://doi.org/10.1016/s0921-4526(99)00766-8
Artigo de periodico
Medium voltage SF6 circuit-break arc model application (2000)
Pinto, Lucilius Carlos; Zanetta Júnior, Luiz Cera
Fonte: Electric Power Systems Research. Unidade: EP
Assunto: CIRCUITOS ELETRÔNICOS
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PINTO, Lucilius Carlos e ZANETTA JÚNIOR, Luiz Cera. Medium voltage SF6 circuit-break arc model application. Electric Power Systems Research, v. 53, p. 67-71, 2000Tradução . . Disponível em: https://doi.org/10.1016/s0378-7796(99)00043-7. Acesso em: 15 out. 2024.
APA
Pinto, L. C., & Zanetta Júnior, L. C. (2000). Medium voltage SF6 circuit-break arc model application. Electric Power Systems Research, 53, 67-71. doi:10.1016/s0378-7796(99)00043-7
NLM
Pinto LC, Zanetta Júnior LC. Medium voltage SF6 circuit-break arc model application [Internet]. Electric Power Systems Research. 2000 ; 53 67-71.[citado 2024 out. 15 ] Available from: https://doi.org/10.1016/s0378-7796(99)00043-7
Vancouver
Pinto LC, Zanetta Júnior LC. Medium voltage SF6 circuit-break arc model application [Internet]. Electric Power Systems Research. 2000 ; 53 67-71.[citado 2024 out. 15 ] Available from: https://doi.org/10.1016/s0378-7796(99)00043-7
Artigo de periodico
Modified nodal analysis applied to electric circuits coupled with FEM in the simulation of a universal motor (2000)
Costa, Maurício Caldora; Nabeta, Silvio Ikuyo ; Cardoso, José Roberto
Fonte: IEEE Transactions on Magnetics. Unidade: EP
Assuntos: MÁQUINAS ELÉTRICAS, MÉTODO DOS ELEMENTOS FINITOS
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ABNT
COSTA, Maurício Caldora e NABETA, Silvio Ikuyo e CARDOSO, José Roberto. Modified nodal analysis applied to electric circuits coupled with FEM in the simulation of a universal motor. IEEE Transactions on Magnetics, v. 36, n. 4, p. 1431-1434, 2000Tradução . . Disponível em: https://doi.org/10.1109/20.877707. Acesso em: 15 out. 2024.
APA
Costa, M. C., Nabeta, S. I., & Cardoso, J. R. (2000). Modified nodal analysis applied to electric circuits coupled with FEM in the simulation of a universal motor. IEEE Transactions on Magnetics, 36( 4), 1431-1434. doi:10.1109/20.877707
NLM
Costa MC, Nabeta SI, Cardoso JR. Modified nodal analysis applied to electric circuits coupled with FEM in the simulation of a universal motor [Internet]. IEEE Transactions on Magnetics. 2000 ;36( 4): 1431-1434.[citado 2024 out. 15 ] Available from: https://doi.org/10.1109/20.877707
Vancouver
Costa MC, Nabeta SI, Cardoso JR. Modified nodal analysis applied to electric circuits coupled with FEM in the simulation of a universal motor [Internet]. IEEE Transactions on Magnetics. 2000 ;36( 4): 1431-1434.[citado 2024 out. 15 ] Available from: https://doi.org/10.1109/20.877707
Artigo de periodico
Dynamic failure of structural joint systems (2000)
Birch, R S; Alves, Marcílio
Fonte: Thin-Walled Structures. Unidade: EP
Assuntos: FADIGA DAS ESTRUTURAS, RESISTÊNCIA DOS MATERIAIS
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BIRCH, R S e ALVES, Marcílio. Dynamic failure of structural joint systems. Thin-Walled Structures, v. 36, n. 2, 2000Tradução . . Disponível em: https://doi.org/10.1016/s0263-8231(99)00040-3. Acesso em: 15 out. 2024.
APA
Birch, R. S., & Alves, M. (2000). Dynamic failure of structural joint systems. Thin-Walled Structures, 36( 2). doi:10.1016/s0263-8231(99)00040-3
NLM
Birch RS, Alves M. Dynamic failure of structural joint systems [Internet]. Thin-Walled Structures. 2000 ; 36( 2):[citado 2024 out. 15 ] Available from: https://doi.org/10.1016/s0263-8231(99)00040-3
Vancouver
Birch RS, Alves M. Dynamic failure of structural joint systems [Internet]. Thin-Walled Structures. 2000 ; 36( 2):[citado 2024 out. 15 ] Available from: https://doi.org/10.1016/s0263-8231(99)00040-3
Artigo de periodico
Surface tension of polyethylene used in thermal coating (2000)
Demarquette, Nicole Raymonde ; Silva, Fábio Teodoro; Brandi, Sérgio Duarte ; Gouvêa, Douglas
Fonte: Polymer Engineering and Science. Unidade: EP
Assuntos: ALUMÍNIO, REVESTIMENTO DE SUPERFÍCIES
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ABNT
DEMARQUETTE, Nicole Raymonde et al. Surface tension of polyethylene used in thermal coating. Polymer Engineering and Science, v. 40, n. 7, p. 1663-1671, 2000Tradução . . Disponível em: https://doi.org/10.1002/pen.11298. Acesso em: 15 out. 2024.
APA
Demarquette, N. R., Silva, F. T., Brandi, S. D., & Gouvêa, D. (2000). Surface tension of polyethylene used in thermal coating. Polymer Engineering and Science, 40( 7), 1663-1671. doi:10.1002/pen.11298
NLM
Demarquette NR, Silva FT, Brandi SD, Gouvêa D. Surface tension of polyethylene used in thermal coating [Internet]. Polymer Engineering and Science. 2000 ; 40( 7): 1663-1671.[citado 2024 out. 15 ] Available from: https://doi.org/10.1002/pen.11298
Vancouver
Demarquette NR, Silva FT, Brandi SD, Gouvêa D. Surface tension of polyethylene used in thermal coating [Internet]. Polymer Engineering and Science. 2000 ; 40( 7): 1663-1671.[citado 2024 out. 15 ] Available from: https://doi.org/10.1002/pen.11298
Trabalho de evento-anais periodico
An analytical-FDTD method for near LEMP calculation (2000)
Sartori, Carlos Antonio França; Cardoso, José Roberto
Fonte: IEEE Transactions on Magnetics. Nome do evento: Simpósio Brasileiro de Computação Gráfica e Processamento de Imagens - SIBGRAPI 99. Unidade: EP
Assunto: ELETROMAGNETISMO
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ABNT
SARTORI, Carlos Antonio França e CARDOSO, José Roberto. An analytical-FDTD method for near LEMP calculation. IEEE Transactions on Magnetics. New York: IEEE. . Acesso em: 15 out. 2024. , 2000
APA
Sartori, C. A. F., & Cardoso, J. R. (2000). An analytical-FDTD method for near LEMP calculation. IEEE Transactions on Magnetics. New York: IEEE.
NLM
Sartori CAF, Cardoso JR. An analytical-FDTD method for near LEMP calculation. IEEE Transactions on Magnetics. 2000 ; 36( 4): 1631-1634.[citado 2024 out. 15 ]
Vancouver
Sartori CAF, Cardoso JR. An analytical-FDTD method for near LEMP calculation. IEEE Transactions on Magnetics. 2000 ; 36( 4): 1631-1634.[citado 2024 out. 15 ]
Artigo de periodico
Binary operator design by k-nearest neighbor learning with application to image resolution increasing (2000)
Hae, Yong Kim
Fonte: International Journal of Imaging Systems and Technology. Unidade: EP
Assunto: RECONHECIMENTO DE PADRÕES
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ABNT
HAE, Yong Kim. Binary operator design by k-nearest neighbor learning with application to image resolution increasing. International Journal of Imaging Systems and Technology, v. 11, n. 5, p. 331-339, 2000Tradução . . Disponível em: https://doi.org/10.1002/ima.1017. Acesso em: 15 out. 2024.
APA
Hae, Y. K. (2000). Binary operator design by k-nearest neighbor learning with application to image resolution increasing. International Journal of Imaging Systems and Technology, 11( 5), 331-339. doi:10.1002/ima.1017
NLM
Hae YK. Binary operator design by k-nearest neighbor learning with application to image resolution increasing [Internet]. International Journal of Imaging Systems and Technology. 2000 ; 11( 5): 331-339.[citado 2024 out. 15 ] Available from: https://doi.org/10.1002/ima.1017
Vancouver
Hae YK. Binary operator design by k-nearest neighbor learning with application to image resolution increasing [Internet]. International Journal of Imaging Systems and Technology. 2000 ; 11( 5): 331-339.[citado 2024 out. 15 ] Available from: https://doi.org/10.1002/ima.1017
Artigo de periodico
Simultaneous extraction of the silicon film and front oxide thicknesses on fully depleted SOI nMOSFETs (2000)
Nicolett, Aparecido Sirley; Martino, João Antonio ; Simoen, Eddy ; Claeys, Cor
Fonte: Solid-State Electronics. Unidade: EP
Assunto: CIRCUITOS INTEGRADOS
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ABNT
NICOLETT, Aparecido Sirley et al. Simultaneous extraction of the silicon film and front oxide thicknesses on fully depleted SOI nMOSFETs. Solid-State Electronics, v. No 2000, n. 11, p. 1961-1969, 2000Tradução . . Disponível em: https://doi.org/10.1016/s0038-1101(00)00166-0. Acesso em: 15 out. 2024.
APA
Nicolett, A. S., Martino, J. A., Simoen, E., & Claeys, C. (2000). Simultaneous extraction of the silicon film and front oxide thicknesses on fully depleted SOI nMOSFETs. Solid-State Electronics, No 2000( 11), 1961-1969. doi:10.1016/s0038-1101(00)00166-0
NLM
Nicolett AS, Martino JA, Simoen E, Claeys C. Simultaneous extraction of the silicon film and front oxide thicknesses on fully depleted SOI nMOSFETs [Internet]. Solid-State Electronics. 2000 ; No 2000( 11): 1961-1969.[citado 2024 out. 15 ] Available from: https://doi.org/10.1016/s0038-1101(00)00166-0
Vancouver
Nicolett AS, Martino JA, Simoen E, Claeys C. Simultaneous extraction of the silicon film and front oxide thicknesses on fully depleted SOI nMOSFETs [Internet]. Solid-State Electronics. 2000 ; No 2000( 11): 1961-1969.[citado 2024 out. 15 ] Available from: https://doi.org/10.1016/s0038-1101(00)00166-0
Artigo de periodico
Robust H2 - control for discrete time Markovian jump linear systems (2000)
Costa, Oswaldo Luiz do Valle ; Marques, Ricardo Paulino
Fonte: International Journal of Control. Unidade: EP
Assunto: CONTROLE (TEORIA DE SISTEMAS E CONTROLE)
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ABNT
COSTA, Oswaldo Luiz do Valle e MARQUES, Ricardo Paulino. Robust H2 - control for discrete time Markovian jump linear systems. International Journal of Control, v. 73, n. 1, p. 11-21. 2000, 2000Tradução . . Disponível em: https://doi.org/10.1080/002071700219894. Acesso em: 15 out. 2024.
APA
Costa, O. L. do V., & Marques, R. P. (2000). Robust H2 - control for discrete time Markovian jump linear systems. International Journal of Control, 73( 1), 11-21. 2000. doi:10.1080/002071700219894
NLM
Costa OL do V, Marques RP. Robust H2 - control for discrete time Markovian jump linear systems [Internet]. International Journal of Control. 2000 ; 73( 1): 11-21. 2000.[citado 2024 out. 15 ] Available from: https://doi.org/10.1080/002071700219894
Vancouver
Costa OL do V, Marques RP. Robust H2 - control for discrete time Markovian jump linear systems [Internet]. International Journal of Control. 2000 ; 73( 1): 11-21. 2000.[citado 2024 out. 15 ] Available from: https://doi.org/10.1080/002071700219894
Artigo de periodico
On the elastic modulus degradation in continuum damage mechanics (2000)
Alves, Marcílio ; Yu, Jilin; Jones, Norman
Fonte: Computers & Structures. Unidade: EP
Assuntos: MECÂNICA DA FRATURA, MECÂNICA DAS ESTRUTURAS
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ABNT
ALVES, Marcílio e YU, Jilin e JONES, Norman. On the elastic modulus degradation in continuum damage mechanics. Computers & Structures, v. 76, n. 6, p. 703-712, 2000Tradução . . Disponível em: https://doi.org/10.1016/s0045-7949(99)00187-x. Acesso em: 15 out. 2024.
APA
Alves, M., Yu, J., & Jones, N. (2000). On the elastic modulus degradation in continuum damage mechanics. Computers & Structures, 76( 6), 703-712. doi:10.1016/s0045-7949(99)00187-x
NLM
Alves M, Yu J, Jones N. On the elastic modulus degradation in continuum damage mechanics [Internet]. Computers & Structures. 2000 ; 76( 6): 703-712.[citado 2024 out. 15 ] Available from: https://doi.org/10.1016/s0045-7949(99)00187-x
Vancouver
Alves M, Yu J, Jones N. On the elastic modulus degradation in continuum damage mechanics [Internet]. Computers & Structures. 2000 ; 76( 6): 703-712.[citado 2024 out. 15 ] Available from: https://doi.org/10.1016/s0045-7949(99)00187-x
Artigo de periodico
Graded-channel fully depleted silicon-on-insulator nMOSFET for reducing the parasitic bipolar effects (2000)
Pavanello, Marcelo Antonio ; Martino, João Antonio ; Flandre, Denis
Fonte: Solid-State Electronics. Unidade: EP
Assunto: CIRCUITOS INTEGRADOS
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ABNT
PAVANELLO, Marcelo Antonio e MARTINO, João Antonio e FLANDRE, Denis. Graded-channel fully depleted silicon-on-insulator nMOSFET for reducing the parasitic bipolar effects. Solid-State Electronics, v. 44, n. 6, p. 917-922, 2000Tradução . . Disponível em: https://doi.org/10.1016/s0038-1101(00)00032-0. Acesso em: 15 out. 2024.
APA
Pavanello, M. A., Martino, J. A., & Flandre, D. (2000). Graded-channel fully depleted silicon-on-insulator nMOSFET for reducing the parasitic bipolar effects. Solid-State Electronics, 44( 6), 917-922. doi:10.1016/s0038-1101(00)00032-0
NLM
Pavanello MA, Martino JA, Flandre D. Graded-channel fully depleted silicon-on-insulator nMOSFET for reducing the parasitic bipolar effects [Internet]. Solid-State Electronics. 2000 ; 44( 6): 917-922.[citado 2024 out. 15 ] Available from: https://doi.org/10.1016/s0038-1101(00)00032-0
Vancouver
Pavanello MA, Martino JA, Flandre D. Graded-channel fully depleted silicon-on-insulator nMOSFET for reducing the parasitic bipolar effects [Internet]. Solid-State Electronics. 2000 ; 44( 6): 917-922.[citado 2024 out. 15 ] Available from: https://doi.org/10.1016/s0038-1101(00)00032-0
Artigo de periodico
Tetraethylorthosilicate SiO2 films deposited at a low temperature (2000)
Silva, Ana Neilde Rodrigues da; Morimoto, Nilton Itiro ; Bonnaud, Olivier
Fonte: Microelectronics and Realiability. Unidade: EP
Assunto: CIRCUITOS ELETRÔNICOS
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ABNT
SILVA, Ana Neilde Rodrigues da e MORIMOTO, Nilton Itiro e BONNAUD, Olivier. Tetraethylorthosilicate SiO2 films deposited at a low temperature. Microelectronics and Realiability, v. 40, p. 621-624, 2000Tradução . . Disponível em: https://doi.org/10.1016/s0026-2714(99)00296-6. Acesso em: 15 out. 2024.
APA
Silva, A. N. R. da, Morimoto, N. I., & Bonnaud, O. (2000). Tetraethylorthosilicate SiO2 films deposited at a low temperature. Microelectronics and Realiability, 40, 621-624. doi:10.1016/s0026-2714(99)00296-6
NLM
Silva ANR da, Morimoto NI, Bonnaud O. Tetraethylorthosilicate SiO2 films deposited at a low temperature [Internet]. Microelectronics and Realiability. 2000 ; 40 621-624.[citado 2024 out. 15 ] Available from: https://doi.org/10.1016/s0026-2714(99)00296-6
Vancouver
Silva ANR da, Morimoto NI, Bonnaud O. Tetraethylorthosilicate SiO2 films deposited at a low temperature [Internet]. Microelectronics and Realiability. 2000 ; 40 621-624.[citado 2024 out. 15 ] Available from: https://doi.org/10.1016/s0026-2714(99)00296-6
Artigo de periodico
An asymmetric channel SOI nMOSFET for reducing parasitic effects and improving output characteristics (2000)
Pavanello, Marcelo Antonio ; Martino, João Antonio ; Dessard, Vincent; Flandre, Denis
Fonte: Electrochemical and Solid-State Letters. Unidade: EP
Assunto: CIRCUITOS INTEGRADOS MOS
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ABNT
PAVANELLO, Marcelo Antonio et al. An asymmetric channel SOI nMOSFET for reducing parasitic effects and improving output characteristics. Electrochemical and Solid-State Letters, v. 3, n. Ja 2000, p. 50-52, 2000Tradução . . Disponível em: https://doi.org/10.1149/1.1390955. Acesso em: 15 out. 2024.
APA
Pavanello, M. A., Martino, J. A., Dessard, V., & Flandre, D. (2000). An asymmetric channel SOI nMOSFET for reducing parasitic effects and improving output characteristics. Electrochemical and Solid-State Letters, 3( Ja 2000), 50-52. doi:10.1149/1.1390955
NLM
Pavanello MA, Martino JA, Dessard V, Flandre D. An asymmetric channel SOI nMOSFET for reducing parasitic effects and improving output characteristics [Internet]. Electrochemical and Solid-State Letters. 2000 ; 3( Ja 2000): 50-52.[citado 2024 out. 15 ] Available from: https://doi.org/10.1149/1.1390955
Vancouver
Pavanello MA, Martino JA, Dessard V, Flandre D. An asymmetric channel SOI nMOSFET for reducing parasitic effects and improving output characteristics [Internet]. Electrochemical and Solid-State Letters. 2000 ; 3( Ja 2000): 50-52.[citado 2024 out. 15 ] Available from: https://doi.org/10.1149/1.1390955
Artigo de periodico
Comparison of fluorescent lamp stabilization methods in the current-fed push-pull inverter (2000)
Sierra, Jorge A.; Kaiser, Walter
Fonte: IEEE Transactions on Industry Applications. Unidade: EP
Assunto: ENGENHARIA ELÉTRICA
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ABNT
SIERRA, Jorge A. e KAISER, Walter. Comparison of fluorescent lamp stabilization methods in the current-fed push-pull inverter. IEEE Transactions on Industry Applications, v. 36, p. 105-110, 2000Tradução . . Disponível em: https://doi.org/10.1109/ias.1998.729966. Acesso em: 15 out. 2024.
APA
Sierra, J. A., & Kaiser, W. (2000). Comparison of fluorescent lamp stabilization methods in the current-fed push-pull inverter. IEEE Transactions on Industry Applications, 36, 105-110. doi:10.1109/ias.1998.729966
NLM
Sierra JA, Kaiser W. Comparison of fluorescent lamp stabilization methods in the current-fed push-pull inverter [Internet]. IEEE Transactions on Industry Applications. 2000 ; 36 105-110.[citado 2024 out. 15 ] Available from: https://doi.org/10.1109/ias.1998.729966
Vancouver
Sierra JA, Kaiser W. Comparison of fluorescent lamp stabilization methods in the current-fed push-pull inverter [Internet]. IEEE Transactions on Industry Applications. 2000 ; 36 105-110.[citado 2024 out. 15 ] Available from: https://doi.org/10.1109/ias.1998.729966
Artigo de periodico
Shape optimisation of bradband microstrip antennas using genetic algorithm (2000)
Choo, Hosung; Hutani, A.; Trintinalia, Luiz Cezar ; Ling, Hao
Fonte: Electronics Letters. Unidade: EP
Assuntos: ANTENAS, ALGORITMOS GENÉTICOS
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ABNT
CHOO, Hosung et al. Shape optimisation of bradband microstrip antennas using genetic algorithm. Electronics Letters, v. 36, n. 25, p. 2057-2058, 2000Tradução . . Disponível em: https://doi.org/10.1049/el:20001452. Acesso em: 15 out. 2024.
APA
Choo, H., Hutani, A., Trintinalia, L. C., & Ling, H. (2000). Shape optimisation of bradband microstrip antennas using genetic algorithm. Electronics Letters, 36( 25), 2057-2058. doi:10.1049/el:20001452
NLM
Choo H, Hutani A, Trintinalia LC, Ling H. Shape optimisation of bradband microstrip antennas using genetic algorithm [Internet]. Electronics Letters. 2000 ; 36( 25): 2057-2058.[citado 2024 out. 15 ] Available from: https://doi.org/10.1049/el:20001452
Vancouver
Choo H, Hutani A, Trintinalia LC, Ling H. Shape optimisation of bradband microstrip antennas using genetic algorithm [Internet]. Electronics Letters. 2000 ; 36( 25): 2057-2058.[citado 2024 out. 15 ] Available from: https://doi.org/10.1049/el:20001452
Artigo de periodico
A novel competitive learning neural network based acoustic transmission system for oil-well monitoring. [URL:http://www.ieee.org] (2000)
Simões, Marcelo Godoy; Furukawa, Celso Massatoshi ; Adamowski, Júlio Cezar ; Mafra, Alexandre Teixeira
Fonte: IEEE Transactions on Industry Applications. Unidade: EP
Assuntos: INTELIGÊNCIA ARTIFICIAL, ACÚSTICA
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ABNT
SIMÕES, Marcelo Godoy et al. A novel competitive learning neural network based acoustic transmission system for oil-well monitoring. [URL:http://www.ieee.org]. IEEE Transactions on Industry Applications, v. 36, n. 2, 2000Tradução . . Disponível em: https://repositorio.usp.br/directbitstream/9881ffa8-50f9-4526-8a41-a8bedb912157/Adamowski-2000-A%20Novel%20Competitive%20Learning.pdf. Acesso em: 15 out. 2024.
APA
Simões, M. G., Furukawa, C. M., Adamowski, J. C., & Mafra, A. T. (2000). A novel competitive learning neural network based acoustic transmission system for oil-well monitoring. [URL:http://www.ieee.org]. IEEE Transactions on Industry Applications, 36( 2). Recuperado de https://repositorio.usp.br/directbitstream/9881ffa8-50f9-4526-8a41-a8bedb912157/Adamowski-2000-A%20Novel%20Competitive%20Learning.pdf
NLM
Simões MG, Furukawa CM, Adamowski JC, Mafra AT. A novel competitive learning neural network based acoustic transmission system for oil-well monitoring. [URL:http://www.ieee.org] [Internet]. IEEE Transactions on Industry Applications. 2000 ; 36( 2):[citado 2024 out. 15 ] Available from: https://repositorio.usp.br/directbitstream/9881ffa8-50f9-4526-8a41-a8bedb912157/Adamowski-2000-A%20Novel%20Competitive%20Learning.pdf
Vancouver
Simões MG, Furukawa CM, Adamowski JC, Mafra AT. A novel competitive learning neural network based acoustic transmission system for oil-well monitoring. [URL:http://www.ieee.org] [Internet]. IEEE Transactions on Industry Applications. 2000 ; 36( 2):[citado 2024 out. 15 ] Available from: https://repositorio.usp.br/directbitstream/9881ffa8-50f9-4526-8a41-a8bedb912157/Adamowski-2000-A%20Novel%20Competitive%20Learning.pdf
Artigo de periodico
Extraction of the lightly doped drain concentration of fully depleted SOI nMOSFETs using the back gate bias effect (2000)
Nicolett, Aparecido Sirley; Martino, João Antonio ; Simoen, Eddy ; Claeys, Cor
Fonte: Solid-State Electronics. Unidade: EP
Assunto: CIRCUITOS INTEGRADOS
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
NICOLETT, Aparecido Sirley et al. Extraction of the lightly doped drain concentration of fully depleted SOI nMOSFETs using the back gate bias effect. Solid-State Electronics, v. 44, n. 4, p. 677-684, 2000Tradução . . Disponível em: https://doi.org/10.1016/s0038-1101(99)00293-2. Acesso em: 15 out. 2024.
APA
Nicolett, A. S., Martino, J. A., Simoen, E., & Claeys, C. (2000). Extraction of the lightly doped drain concentration of fully depleted SOI nMOSFETs using the back gate bias effect. Solid-State Electronics, 44( 4), 677-684. doi:10.1016/s0038-1101(99)00293-2
NLM
Nicolett AS, Martino JA, Simoen E, Claeys C. Extraction of the lightly doped drain concentration of fully depleted SOI nMOSFETs using the back gate bias effect [Internet]. Solid-State Electronics. 2000 ; 44( 4): 677-684.[citado 2024 out. 15 ] Available from: https://doi.org/10.1016/s0038-1101(99)00293-2
Vancouver
Nicolett AS, Martino JA, Simoen E, Claeys C. Extraction of the lightly doped drain concentration of fully depleted SOI nMOSFETs using the back gate bias effect [Internet]. Solid-State Electronics. 2000 ; 44( 4): 677-684.[citado 2024 out. 15 ] Available from: https://doi.org/10.1016/s0038-1101(99)00293-2
Artigo de periodico
Effects of the methane content on the characteristics of diamond-like carbon films produced by sputtering (2000)
Mansano, Ronaldo Domingues ; Massi, Marcos; Zambom, Luís da Silva ; Verdonck, Patrick Bernard; Nogueira, P. M.; Maciel, H. S.; Otani, Choyu
Fonte: Thin Solid Films. Unidade: EP
Assunto: FILMES
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
MANSANO, Ronaldo Domingues et al. Effects of the methane content on the characteristics of diamond-like carbon films produced by sputtering. Thin Solid Films, n. 373, p. 243-246, 2000Tradução . . Disponível em: https://doi.org/10.1016/s0040-6090(00)01088-9. Acesso em: 15 out. 2024.
APA
Mansano, R. D., Massi, M., Zambom, L. da S., Verdonck, P. B., Nogueira, P. M., Maciel, H. S., & Otani, C. (2000). Effects of the methane content on the characteristics of diamond-like carbon films produced by sputtering. Thin Solid Films, ( 373), 243-246. doi:10.1016/s0040-6090(00)01088-9
NLM
Mansano RD, Massi M, Zambom L da S, Verdonck PB, Nogueira PM, Maciel HS, Otani C. Effects of the methane content on the characteristics of diamond-like carbon films produced by sputtering [Internet]. Thin Solid Films. 2000 ;( 373): 243-246.[citado 2024 out. 15 ] Available from: https://doi.org/10.1016/s0040-6090(00)01088-9
Vancouver
Mansano RD, Massi M, Zambom L da S, Verdonck PB, Nogueira PM, Maciel HS, Otani C. Effects of the methane content on the characteristics of diamond-like carbon films produced by sputtering [Internet]. Thin Solid Films. 2000 ;( 373): 243-246.[citado 2024 out. 15 ] Available from: https://doi.org/10.1016/s0040-6090(00)01088-9

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