SOI technology characterization using SOI-MOS capacitor (2005)
Fonte: Solid-State Electronics. Unidade: EP
Assunto: CIRCUITOS INTEGRADOS MOS
ABNT
SONNENBERG, Victor e MARTINO, João Antonio. SOI technology characterization using SOI-MOS capacitor. Solid-State Electronics, 2005Tradução . . Disponível em: https://doi.org/10.1016/j.sse.2004.06.010. Acesso em: 15 out. 2024.APA
Sonnenberg, V., & Martino, J. A. (2005). SOI technology characterization using SOI-MOS capacitor. Solid-State Electronics. doi:10.1016/j.sse.2004.06.010NLM
Sonnenberg V, Martino JA. SOI technology characterization using SOI-MOS capacitor [Internet]. Solid-State Electronics. 2005 ;[citado 2024 out. 15 ] Available from: https://doi.org/10.1016/j.sse.2004.06.010Vancouver
Sonnenberg V, Martino JA. SOI technology characterization using SOI-MOS capacitor [Internet]. Solid-State Electronics. 2005 ;[citado 2024 out. 15 ] Available from: https://doi.org/10.1016/j.sse.2004.06.010