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Artigo de periodico
Defect centre responsible for production of 110 `GRAUS´C TL peak in quartz (2009)
Farias, T M B; Watanabe, S.; Rao, T K Gundu
Source: Solid State Communications. Unidade: IF
Assunto: TERMOLUMINESCÊNCIA
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ABNT
FARIAS, T M B e WATANABE, S. e RAO, T K Gundu. Defect centre responsible for production of 110 `GRAUS´C TL peak in quartz. Solid State Communications, v. 149, n. 29-30, p. 1173-1175, 2009Tradução . . Disponível em: http://www.sciencedirect.com/science/journal/00381098. Acesso em: 08 jul. 2024.
APA
Farias, T. M. B., Watanabe, S., & Rao, T. K. G. (2009). Defect centre responsible for production of 110 `GRAUS´C TL peak in quartz. Solid State Communications, 149( 29-30), 1173-1175. Recuperado de http://www.sciencedirect.com/science/journal/00381098
NLM
Farias TMB, Watanabe S, Rao TKG. Defect centre responsible for production of 110 `GRAUS´C TL peak in quartz [Internet]. Solid State Communications. 2009 ; 149( 29-30): 1173-1175.[citado 2024 jul. 08 ] Available from: http://www.sciencedirect.com/science/journal/00381098
Vancouver
Farias TMB, Watanabe S, Rao TKG. Defect centre responsible for production of 110 `GRAUS´C TL peak in quartz [Internet]. Solid State Communications. 2009 ; 149( 29-30): 1173-1175.[citado 2024 jul. 08 ] Available from: http://www.sciencedirect.com/science/journal/00381098
Artigo de periodico
Adsorption of CO and NO molecules on carbon doped boron nitride nanotubes (2007)
Baierle, Rogerio Jose; Schmidt, T M; Fazzio, Adalberto
Source: Solid State Communications. Unidade: IF
Subjects: VIDRO, VIDRO
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BAIERLE, Rogerio Jose e SCHMIDT, T M e FAZZIO, Adalberto. Adsorption of CO and NO molecules on carbon doped boron nitride nanotubes. Solid State Communications, v. 141, n. 1-2, p. 49-53, 2007Tradução . . Disponível em: https://doi.org/10.1016/j.ssc.2007.01.036. Acesso em: 08 jul. 2024.
APA
Baierle, R. J., Schmidt, T. M., & Fazzio, A. (2007). Adsorption of CO and NO molecules on carbon doped boron nitride nanotubes. Solid State Communications, 141( 1-2), 49-53. doi:10.1016/j.ssc.2007.01.036
NLM
Baierle RJ, Schmidt TM, Fazzio A. Adsorption of CO and NO molecules on carbon doped boron nitride nanotubes [Internet]. Solid State Communications. 2007 ; 141( 1-2): 49-53.[citado 2024 jul. 08 ] Available from: https://doi.org/10.1016/j.ssc.2007.01.036
Vancouver
Baierle RJ, Schmidt TM, Fazzio A. Adsorption of CO and NO molecules on carbon doped boron nitride nanotubes [Internet]. Solid State Communications. 2007 ; 141( 1-2): 49-53.[citado 2024 jul. 08 ] Available from: https://doi.org/10.1016/j.ssc.2007.01.036
Artigo de periodico
Dielectric properties of `P IND.2´`O IND.5´ `Na IND.2´O-`Li IND.2´O glasses containing WO3, CoO or `Fe IND.2´`O IND.3´ (2007)
Bergo, P; Pontuschka, W. M.; Prison, J M
Source: Solid State Communications. Unidade: IF
Subjects: DIELÉTRICOS, VIDRO
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BERGO, P e PONTUSCHKA, W. M. e PRISON, J M. Dielectric properties of `P IND.2´`O IND.5´ `Na IND.2´O-`Li IND.2´O glasses containing WO3, CoO or `Fe IND.2´`O IND.3´. Solid State Communications, v. 141, n. 10, p. 545-547, 2007Tradução . . Disponível em: http://www.sciencedirect.com/science/journal/00381098. Acesso em: 08 jul. 2024.
APA
Bergo, P., Pontuschka, W. M., & Prison, J. M. (2007). Dielectric properties of `P IND.2´`O IND.5´ `Na IND.2´O-`Li IND.2´O glasses containing WO3, CoO or `Fe IND.2´`O IND.3´. Solid State Communications, 141( 10), 545-547. Recuperado de http://www.sciencedirect.com/science/journal/00381098
NLM
Bergo P, Pontuschka WM, Prison JM. Dielectric properties of `P IND.2´`O IND.5´ `Na IND.2´O-`Li IND.2´O glasses containing WO3, CoO or `Fe IND.2´`O IND.3´ [Internet]. Solid State Communications. 2007 ; 141( 10): 545-547.[citado 2024 jul. 08 ] Available from: http://www.sciencedirect.com/science/journal/00381098
Vancouver
Bergo P, Pontuschka WM, Prison JM. Dielectric properties of `P IND.2´`O IND.5´ `Na IND.2´O-`Li IND.2´O glasses containing WO3, CoO or `Fe IND.2´`O IND.3´ [Internet]. Solid State Communications. 2007 ; 141( 10): 545-547.[citado 2024 jul. 08 ] Available from: http://www.sciencedirect.com/science/journal/00381098
Artigo de periodico
Phenomenological band structure model of magnetic coupling in semiconductors (2006)
Dalpian, Gustavo M; Wei, Su-Huai; Gong, X Z; Silva, Antonio Jose Roque da; Fazzio, Adalberto
Source: Solid State Communications. Unidade: IF
Subjects: MATÉRIA CONDENSADA, SEMICONDUTORES, FERROMAGNETISMO, MAGNETISMO
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DALPIAN, Gustavo M et al. Phenomenological band structure model of magnetic coupling in semiconductors. Solid State Communications, v. 138, n. 7, p. 353-358, 2006Tradução . . Disponível em: https://doi.org/10.1016/j.ssc.2006.03.002. Acesso em: 08 jul. 2024.
APA
Dalpian, G. M., Wei, S. -H., Gong, X. Z., Silva, A. J. R. da, & Fazzio, A. (2006). Phenomenological band structure model of magnetic coupling in semiconductors. Solid State Communications, 138( 7), 353-358. doi:10.1016/j.ssc.2006.03.002
NLM
Dalpian GM, Wei S-H, Gong XZ, Silva AJR da, Fazzio A. Phenomenological band structure model of magnetic coupling in semiconductors [Internet]. Solid State Communications. 2006 ; 138( 7): 353-358.[citado 2024 jul. 08 ] Available from: https://doi.org/10.1016/j.ssc.2006.03.002
Vancouver
Dalpian GM, Wei S-H, Gong XZ, Silva AJR da, Fazzio A. Phenomenological band structure model of magnetic coupling in semiconductors [Internet]. Solid State Communications. 2006 ; 138( 7): 353-358.[citado 2024 jul. 08 ] Available from: https://doi.org/10.1016/j.ssc.2006.03.002
Artigo de periodico
Comparative study of lower fullerenes doped with boron and nitrogen (2006)
Viani, Lucas; Santos, Maria Cristina dos
Source: Solid State Communications. Unidade: IF
Subjects: MATÉRIA CONDENSADA, ESTRUTURA ELETRÔNICA
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VIANI, Lucas e SANTOS, Maria Cristina dos. Comparative study of lower fullerenes doped with boron and nitrogen. Solid State Communications, v. 138, n. 10-11, p. 498-501, 2006Tradução . . Disponível em: https://doi.org/10.1016/j.ssc.2006.04.027. Acesso em: 08 jul. 2024.
APA
Viani, L., & Santos, M. C. dos. (2006). Comparative study of lower fullerenes doped with boron and nitrogen. Solid State Communications, 138( 10-11), 498-501. doi:10.1016/j.ssc.2006.04.027
NLM
Viani L, Santos MC dos. Comparative study of lower fullerenes doped with boron and nitrogen [Internet]. Solid State Communications. 2006 ; 138( 10-11): 498-501.[citado 2024 jul. 08 ] Available from: https://doi.org/10.1016/j.ssc.2006.04.027
Vancouver
Viani L, Santos MC dos. Comparative study of lower fullerenes doped with boron and nitrogen [Internet]. Solid State Communications. 2006 ; 138( 10-11): 498-501.[citado 2024 jul. 08 ] Available from: https://doi.org/10.1016/j.ssc.2006.04.027
Artigo de periodico
The dynamics of excitons and trions in resonant tunneling diodes (2005)
Camps, I.; Makler, S. S.; Vercik, Andrés; Galvão Gobato, Y.; Marques, G. E.; Brasil, Maria J. S. P.
Source: Solid State Communications. Unidade: FZEA
Subjects: MICROELETRÔNICA, DISPOSITIVOS ELETRÔNICOS, DIODOS
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CAMPS, I. et al. The dynamics of excitons and trions in resonant tunneling diodes. Solid State Communications, v. 135, n. 4, p. 241-246, 2005Tradução . . Disponível em: https://doi.org/10.1016/j.ssc.2005.04.026. Acesso em: 08 jul. 2024.
APA
Camps, I., Makler, S. S., Vercik, A., Galvão Gobato, Y., Marques, G. E., & Brasil, M. J. S. P. (2005). The dynamics of excitons and trions in resonant tunneling diodes. Solid State Communications, 135( 4), 241-246. doi:10.1016/j.ssc.2005.04.026
NLM
Camps I, Makler SS, Vercik A, Galvão Gobato Y, Marques GE, Brasil MJSP. The dynamics of excitons and trions in resonant tunneling diodes [Internet]. Solid State Communications. 2005 ; 135( 4): 241-246.[citado 2024 jul. 08 ] Available from: https://doi.org/10.1016/j.ssc.2005.04.026
Vancouver
Camps I, Makler SS, Vercik A, Galvão Gobato Y, Marques GE, Brasil MJSP. The dynamics of excitons and trions in resonant tunneling diodes [Internet]. Solid State Communications. 2005 ; 135( 4): 241-246.[citado 2024 jul. 08 ] Available from: https://doi.org/10.1016/j.ssc.2005.04.026
Artigo de periodico
Photoreflectance study of energy level structure of self-assembled InAs/GaAs quantum dots emitting at 1.3"mu"m (2005)
Rudno-Rudzinski; Ryczko, K; Sek, G; Misiewicz, J; Silva, M J da; Quivy, A. A.
Source: Solid State Communications. Unidade: IF
Subjects: ESTRUTURA ELETRÔNICA, LASER, FOTOLUMINESCÊNCIA
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RUDNO-RUDZINSKI, et al. Photoreflectance study of energy level structure of self-assembled InAs/GaAs quantum dots emitting at 1.3"mu"m. Solid State Communications, v. 135, n. 4, p. 232-236, 2005Tradução . . Disponível em: https://doi.org/10.1016/j.ssc.2005.04.030. Acesso em: 08 jul. 2024.
APA
Rudno-Rudzinski,, Ryczko, K., Sek, G., Misiewicz, J., Silva, M. J. da, & Quivy, A. A. (2005). Photoreflectance study of energy level structure of self-assembled InAs/GaAs quantum dots emitting at 1.3"mu"m. Solid State Communications, 135( 4), 232-236. doi:10.1016/j.ssc.2005.04.030
NLM
Rudno-Rudzinski, Ryczko K, Sek G, Misiewicz J, Silva MJ da, Quivy AA. Photoreflectance study of energy level structure of self-assembled InAs/GaAs quantum dots emitting at 1.3"mu"m [Internet]. Solid State Communications. 2005 ; 135( 4): 232-236.[citado 2024 jul. 08 ] Available from: https://doi.org/10.1016/j.ssc.2005.04.030
Vancouver
Rudno-Rudzinski, Ryczko K, Sek G, Misiewicz J, Silva MJ da, Quivy AA. Photoreflectance study of energy level structure of self-assembled InAs/GaAs quantum dots emitting at 1.3"mu"m [Internet]. Solid State Communications. 2005 ; 135( 4): 232-236.[citado 2024 jul. 08 ] Available from: https://doi.org/10.1016/j.ssc.2005.04.030
Artigo de periodico
Handling the particle size and distribution of 'Fe IND. 3''O IND. 4' nanoparticles through ball milling (2004)
Goya, Gerardo Fabían
Source: Solid State Communications. Unidade: IF
Subjects: MATÉRIA CONDENSADA, NANOTECNOLOGIA, DIFRAÇÃO POR RAIOS X, MICROSCOPIA ELETRÔNICA
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GOYA, Gerardo Fabían. Handling the particle size and distribution of 'Fe IND. 3''O IND. 4' nanoparticles through ball milling. Solid State Communications, 2004Tradução . . Disponível em: http://www.sciencedirect.com/science?_ob=MImg&_imagekey=B6TVW-4C82743-6-25&_cdi=5545&_orig=browse&_coverDate=06%2F30%2F2004&_sk=998699987&view=c&wchp=dGLbVlb-zSkzV&_acct=C000049650&_version=1&_userid=972067&md5=94806f0c675d1186bcc8351f21781902&ie=f.pdf. Acesso em: 08 jul. 2024.
APA
Goya, G. F. (2004). Handling the particle size and distribution of 'Fe IND. 3''O IND. 4' nanoparticles through ball milling. Solid State Communications. Recuperado de http://www.sciencedirect.com/science?_ob=MImg&_imagekey=B6TVW-4C82743-6-25&_cdi=5545&_orig=browse&_coverDate=06%2F30%2F2004&_sk=998699987&view=c&wchp=dGLbVlb-zSkzV&_acct=C000049650&_version=1&_userid=972067&md5=94806f0c675d1186bcc8351f21781902&ie=f.pdf
NLM
Goya GF. Handling the particle size and distribution of 'Fe IND. 3''O IND. 4' nanoparticles through ball milling [Internet]. Solid State Communications. 2004 ;[citado 2024 jul. 08 ] Available from: http://www.sciencedirect.com/science?_ob=MImg&_imagekey=B6TVW-4C82743-6-25&_cdi=5545&_orig=browse&_coverDate=06%2F30%2F2004&_sk=998699987&view=c&wchp=dGLbVlb-zSkzV&_acct=C000049650&_version=1&_userid=972067&md5=94806f0c675d1186bcc8351f21781902&ie=f.pdf
Vancouver
Goya GF. Handling the particle size and distribution of 'Fe IND. 3''O IND. 4' nanoparticles through ball milling [Internet]. Solid State Communications. 2004 ;[citado 2024 jul. 08 ] Available from: http://www.sciencedirect.com/science?_ob=MImg&_imagekey=B6TVW-4C82743-6-25&_cdi=5545&_orig=browse&_coverDate=06%2F30%2F2004&_sk=998699987&view=c&wchp=dGLbVlb-zSkzV&_acct=C000049650&_version=1&_userid=972067&md5=94806f0c675d1186bcc8351f21781902&ie=f.pdf
Artigo de periodico
Field dependent susceptibility of the 2D ferromagnet '('CH IND.3' 'NH IND.3) IND.2' 'CuCl IND.4' in the paramagnetic phase (2003)
Becerra, Carlos Castilla; Paduan-Filho, A.
Source: Solid State Communications. Unidade: IF
Subjects: MATERIAIS MAGNÉTICOS, FERROMAGNETISMO, TEMPERATURA
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BECERRA, Carlos Castilla e PADUAN-FILHO, A. Field dependent susceptibility of the 2D ferromagnet '('CH IND.3' 'NH IND.3) IND.2' 'CuCl IND.4' in the paramagnetic phase. Solid State Communications, v. 125, n. 2, p. 99-101, 2003Tradução . . Disponível em: http://www.sciencedirect.com/science?_ob=JournalURL&_cdi=5545&_auth=y&_acct=C000049650&_version=1&_urlVersion=0&_userid=972067&md5=2c31626c8839eda088d08d3a1744c13b. Acesso em: 08 jul. 2024.
APA
Becerra, C. C., & Paduan-Filho, A. (2003). Field dependent susceptibility of the 2D ferromagnet '('CH IND.3' 'NH IND.3) IND.2' 'CuCl IND.4' in the paramagnetic phase. Solid State Communications, 125( 2), 99-101. Recuperado de http://www.sciencedirect.com/science?_ob=JournalURL&_cdi=5545&_auth=y&_acct=C000049650&_version=1&_urlVersion=0&_userid=972067&md5=2c31626c8839eda088d08d3a1744c13b
NLM
Becerra CC, Paduan-Filho A. Field dependent susceptibility of the 2D ferromagnet '('CH IND.3' 'NH IND.3) IND.2' 'CuCl IND.4' in the paramagnetic phase [Internet]. Solid State Communications. 2003 ; 125( 2): 99-101.[citado 2024 jul. 08 ] Available from: http://www.sciencedirect.com/science?_ob=JournalURL&_cdi=5545&_auth=y&_acct=C000049650&_version=1&_urlVersion=0&_userid=972067&md5=2c31626c8839eda088d08d3a1744c13b
Vancouver
Becerra CC, Paduan-Filho A. Field dependent susceptibility of the 2D ferromagnet '('CH IND.3' 'NH IND.3) IND.2' 'CuCl IND.4' in the paramagnetic phase [Internet]. Solid State Communications. 2003 ; 125( 2): 99-101.[citado 2024 jul. 08 ] Available from: http://www.sciencedirect.com/science?_ob=JournalURL&_cdi=5545&_auth=y&_acct=C000049650&_version=1&_urlVersion=0&_userid=972067&md5=2c31626c8839eda088d08d3a1744c13b
Artigo de periodico
Antiferromagnetism and spin-glass transition in the 'FeIn IND.X' 'Cr IND.2-X' 'Se IND.4' series of selenides (2003)
Goya, Gerardo Fabían; Sagredo, V
Source: Solid State Communications. Unidade: IF
Subjects: EFEITO MOSSBAUER, ESPECTROSCOPIA DE RAIO GAMA
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ABNT
GOYA, Gerardo Fabían e SAGREDO, V. Antiferromagnetism and spin-glass transition in the 'FeIn IND.X' 'Cr IND.2-X' 'Se IND.4' series of selenides. Solid State Communications, v. 125, n. 5, p. 247-251, 2003Tradução . . Disponível em: http://www.sciencedirect.com/science?_ob=JournalURL&_cdi=5545&_auth=y&_acct=C000049650&_version=1&_urlVersion=0&_userid=972067&md5=2c31626c8839eda088d08d3a1744c13b. Acesso em: 08 jul. 2024.
APA
Goya, G. F., & Sagredo, V. (2003). Antiferromagnetism and spin-glass transition in the 'FeIn IND.X' 'Cr IND.2-X' 'Se IND.4' series of selenides. Solid State Communications, 125( 5), 247-251. Recuperado de http://www.sciencedirect.com/science?_ob=JournalURL&_cdi=5545&_auth=y&_acct=C000049650&_version=1&_urlVersion=0&_userid=972067&md5=2c31626c8839eda088d08d3a1744c13b
NLM
Goya GF, Sagredo V. Antiferromagnetism and spin-glass transition in the 'FeIn IND.X' 'Cr IND.2-X' 'Se IND.4' series of selenides [Internet]. Solid State Communications. 2003 ; 125( 5): 247-251.[citado 2024 jul. 08 ] Available from: http://www.sciencedirect.com/science?_ob=JournalURL&_cdi=5545&_auth=y&_acct=C000049650&_version=1&_urlVersion=0&_userid=972067&md5=2c31626c8839eda088d08d3a1744c13b
Vancouver
Goya GF, Sagredo V. Antiferromagnetism and spin-glass transition in the 'FeIn IND.X' 'Cr IND.2-X' 'Se IND.4' series of selenides [Internet]. Solid State Communications. 2003 ; 125( 5): 247-251.[citado 2024 jul. 08 ] Available from: http://www.sciencedirect.com/science?_ob=JournalURL&_cdi=5545&_auth=y&_acct=C000049650&_version=1&_urlVersion=0&_userid=972067&md5=2c31626c8839eda088d08d3a1744c13b
Artigo de periodico
Near band-edge optical properties of cubic GaN (2003)
Fernandez, J R L; Noriega, O C; Soares, J A N T; Cerdeira, F; Meneses, E A; Leite, J. R.; As, D J; Schikora, D; Lischka, K
Source: Solid State Communications. Unidade: IF
Subjects: FILMES FINOS, ESTRUTURA ELETRÔNICA, SEMICONDUTORES
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ABNT
FERNANDEZ, J R L et al. Near band-edge optical properties of cubic GaN. Solid State Communications, v. 125, n. 3-4, p. 205-208, 2003Tradução . . Disponível em: https://doi.org/10.1016/s0038-1098(02)00768-8. Acesso em: 08 jul. 2024.
APA
Fernandez, J. R. L., Noriega, O. C., Soares, J. A. N. T., Cerdeira, F., Meneses, E. A., Leite, J. R., et al. (2003). Near band-edge optical properties of cubic GaN. Solid State Communications, 125( 3-4), 205-208. doi:10.1016/s0038-1098(02)00768-8
NLM
Fernandez JRL, Noriega OC, Soares JANT, Cerdeira F, Meneses EA, Leite JR, As DJ, Schikora D, Lischka K. Near band-edge optical properties of cubic GaN [Internet]. Solid State Communications. 2003 ; 125( 3-4): 205-208.[citado 2024 jul. 08 ] Available from: https://doi.org/10.1016/s0038-1098(02)00768-8
Vancouver
Fernandez JRL, Noriega OC, Soares JANT, Cerdeira F, Meneses EA, Leite JR, As DJ, Schikora D, Lischka K. Near band-edge optical properties of cubic GaN [Internet]. Solid State Communications. 2003 ; 125( 3-4): 205-208.[citado 2024 jul. 08 ] Available from: https://doi.org/10.1016/s0038-1098(02)00768-8
Artigo de periodico
Electric field gradients at Ta in Zr and Hf inter-metallic compounds (2002)
Terrazos, L. A.; Petrilli, Helena Maria; Marszalek, M.; Saitovitch, H.; Silva, P. R. J.; Blaha, P.; Schwarz, K.
Source: Solid State Communications. Unidade: IF
Subjects: INTERAÇÕES NUCLEARES, ÍONS, RESSONÂNCIA PARAMAGNÉTICA ELETRÔNICA, ESTRUTURA ELETRÔNICA
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ABNT
TERRAZOS, L. A. et al. Electric field gradients at Ta in Zr and Hf inter-metallic compounds. Solid State Communications, v. 121, n. 9-10, p. 525-529, 2002Tradução . . Disponível em: https://doi.org/10.1016/s0038-1098(01)00515-4. Acesso em: 08 jul. 2024.
APA
Terrazos, L. A., Petrilli, H. M., Marszalek, M., Saitovitch, H., Silva, P. R. J., Blaha, P., & Schwarz, K. (2002). Electric field gradients at Ta in Zr and Hf inter-metallic compounds. Solid State Communications, 121( 9-10), 525-529. doi:10.1016/s0038-1098(01)00515-4
NLM
Terrazos LA, Petrilli HM, Marszalek M, Saitovitch H, Silva PRJ, Blaha P, Schwarz K. Electric field gradients at Ta in Zr and Hf inter-metallic compounds [Internet]. Solid State Communications. 2002 ; 121( 9-10): 525-529.[citado 2024 jul. 08 ] Available from: https://doi.org/10.1016/s0038-1098(01)00515-4
Vancouver
Terrazos LA, Petrilli HM, Marszalek M, Saitovitch H, Silva PRJ, Blaha P, Schwarz K. Electric field gradients at Ta in Zr and Hf inter-metallic compounds [Internet]. Solid State Communications. 2002 ; 121( 9-10): 525-529.[citado 2024 jul. 08 ] Available from: https://doi.org/10.1016/s0038-1098(01)00515-4
Artigo de periodico
Interplay between direct gap renormalization and intervalley scattering in 'Al IND.X' 'Ga IND.1-X'As near the 'gama'-X crossover (2002)
Andrade, L. H. F.; Marotti, R. E.; Quivy, A. A.; Cruz, C. H. de Brito
Source: Solid State Communications. Unidade: IF
Subjects: SEMICONDUTORES, ÓPTICA, ESPECTROSCOPIA ÓPTICA
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ABNT
ANDRADE, L. H. F. et al. Interplay between direct gap renormalization and intervalley scattering in 'Al IND.X' 'Ga IND.1-X'As near the 'gama'-X crossover. Solid State Communications, v. 121, n. 4, p. 181-185, 2002Tradução . . Disponível em: http://www.sciencedirect.com/science?_ob=JournalURL&_cdi=5545&_auth=y&_acct=C000049650&_version=1&_urlVersion=0&_userid=972067&md5=2c31626c8839eda088d08d3a1744c13b. Acesso em: 08 jul. 2024.
APA
Andrade, L. H. F., Marotti, R. E., Quivy, A. A., & Cruz, C. H. de B. (2002). Interplay between direct gap renormalization and intervalley scattering in 'Al IND.X' 'Ga IND.1-X'As near the 'gama'-X crossover. Solid State Communications, 121( 4), 181-185. Recuperado de http://www.sciencedirect.com/science?_ob=JournalURL&_cdi=5545&_auth=y&_acct=C000049650&_version=1&_urlVersion=0&_userid=972067&md5=2c31626c8839eda088d08d3a1744c13b
NLM
Andrade LHF, Marotti RE, Quivy AA, Cruz CH de B. Interplay between direct gap renormalization and intervalley scattering in 'Al IND.X' 'Ga IND.1-X'As near the 'gama'-X crossover [Internet]. Solid State Communications. 2002 ; 121( 4): 181-185.[citado 2024 jul. 08 ] Available from: http://www.sciencedirect.com/science?_ob=JournalURL&_cdi=5545&_auth=y&_acct=C000049650&_version=1&_urlVersion=0&_userid=972067&md5=2c31626c8839eda088d08d3a1744c13b
Vancouver
Andrade LHF, Marotti RE, Quivy AA, Cruz CH de B. Interplay between direct gap renormalization and intervalley scattering in 'Al IND.X' 'Ga IND.1-X'As near the 'gama'-X crossover [Internet]. Solid State Communications. 2002 ; 121( 4): 181-185.[citado 2024 jul. 08 ] Available from: http://www.sciencedirect.com/science?_ob=JournalURL&_cdi=5545&_auth=y&_acct=C000049650&_version=1&_urlVersion=0&_userid=972067&md5=2c31626c8839eda088d08d3a1744c13b
Artigo de periodico
Dislocation core properties in semiconductors (2001)
Justo Filho, João Francisco ; Antonelli, Alex; Fazzio, Adalberto
Source: Solid State Communications. Unidade: IF
Assunto: MATÉRIA CONDENSADA
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
JUSTO FILHO, João Francisco e ANTONELLI, Alex e FAZZIO, Adalberto. Dislocation core properties in semiconductors. Solid State Communications, v. 118, n. 12, p. 651-655, 2001Tradução . . Disponível em: https://doi.org/10.1016/s0038-1098(01)00197-1. Acesso em: 08 jul. 2024.
APA
Justo Filho, J. F., Antonelli, A., & Fazzio, A. (2001). Dislocation core properties in semiconductors. Solid State Communications, 118( 12), 651-655. doi:10.1016/s0038-1098(01)00197-1
NLM
Justo Filho JF, Antonelli A, Fazzio A. Dislocation core properties in semiconductors [Internet]. Solid State Communications. 2001 ; 118( 12): 651-655.[citado 2024 jul. 08 ] Available from: https://doi.org/10.1016/s0038-1098(01)00197-1
Vancouver
Justo Filho JF, Antonelli A, Fazzio A. Dislocation core properties in semiconductors [Internet]. Solid State Communications. 2001 ; 118( 12): 651-655.[citado 2024 jul. 08 ] Available from: https://doi.org/10.1016/s0038-1098(01)00197-1
Artigo de periodico
Ab initio calculations on the compensation mechanisms in InP (2001)
Schmidt, T M; Miwa, R H; Fazzio, Adalberto; Mota, R.
Source: Solid State Communications. Unidade: IF
Subjects: SEMICONDUTORES, MATÉRIA CONDENSADA (PROPRIEDADES MECÂNICAS;PROPRIEDADES TÉRMICAS)
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
SCHMIDT, T M et al. Ab initio calculations on the compensation mechanisms in InP. Solid State Communications, v. 117, n. 6, p. 353-355, 2001Tradução . . Disponível em: https://doi.org/10.1016/s0038-1098(00)00487-7. Acesso em: 08 jul. 2024.
APA
Schmidt, T. M., Miwa, R. H., Fazzio, A., & Mota, R. (2001). Ab initio calculations on the compensation mechanisms in InP. Solid State Communications, 117( 6), 353-355. doi:10.1016/s0038-1098(00)00487-7
NLM
Schmidt TM, Miwa RH, Fazzio A, Mota R. Ab initio calculations on the compensation mechanisms in InP [Internet]. Solid State Communications. 2001 ; 117( 6): 353-355.[citado 2024 jul. 08 ] Available from: https://doi.org/10.1016/s0038-1098(00)00487-7
Vancouver
Schmidt TM, Miwa RH, Fazzio A, Mota R. Ab initio calculations on the compensation mechanisms in InP [Internet]. Solid State Communications. 2001 ; 117( 6): 353-355.[citado 2024 jul. 08 ] Available from: https://doi.org/10.1016/s0038-1098(00)00487-7
Artigo de periodico
Theoretical investigation of the pressure induced cubic-diamond-'beta'-tin phase transition in the 'Si IND.0.5''Ge IND.0.5' (2001)
Silva, Cesar R S da; Venezuela, P; Silva, Antonio Jose Roque da; Fazzio, Adalberto
Source: Solid State Communications. Unidade: IF
Subjects: SEMICONDUTORES, SUPERCONDUTIVIDADE, MUDANÇA DE FASE
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
SILVA, Cesar R S da et al. Theoretical investigation of the pressure induced cubic-diamond-'beta'-tin phase transition in the 'Si IND.0.5''Ge IND.0.5'. Solid State Communications, v. 120, n. 9-10, p. 369-373, 2001Tradução . . Disponível em: http://www.sciencedirect.com/science?_ob=JournalURL&_cdi=5545&_auth=y&_acct=C000049650&_version=1&_urlVersion=0&_userid=972067&md5=2c31626c8839eda088d08d3a1744c13b. Acesso em: 08 jul. 2024.
APA
Silva, C. R. S. da, Venezuela, P., Silva, A. J. R. da, & Fazzio, A. (2001). Theoretical investigation of the pressure induced cubic-diamond-'beta'-tin phase transition in the 'Si IND.0.5''Ge IND.0.5'. Solid State Communications, 120( 9-10), 369-373. Recuperado de http://www.sciencedirect.com/science?_ob=JournalURL&_cdi=5545&_auth=y&_acct=C000049650&_version=1&_urlVersion=0&_userid=972067&md5=2c31626c8839eda088d08d3a1744c13b
NLM
Silva CRS da, Venezuela P, Silva AJR da, Fazzio A. Theoretical investigation of the pressure induced cubic-diamond-'beta'-tin phase transition in the 'Si IND.0.5''Ge IND.0.5' [Internet]. Solid State Communications. 2001 ; 120( 9-10): 369-373.[citado 2024 jul. 08 ] Available from: http://www.sciencedirect.com/science?_ob=JournalURL&_cdi=5545&_auth=y&_acct=C000049650&_version=1&_urlVersion=0&_userid=972067&md5=2c31626c8839eda088d08d3a1744c13b
Vancouver
Silva CRS da, Venezuela P, Silva AJR da, Fazzio A. Theoretical investigation of the pressure induced cubic-diamond-'beta'-tin phase transition in the 'Si IND.0.5''Ge IND.0.5' [Internet]. Solid State Communications. 2001 ; 120( 9-10): 369-373.[citado 2024 jul. 08 ] Available from: http://www.sciencedirect.com/science?_ob=JournalURL&_cdi=5545&_auth=y&_acct=C000049650&_version=1&_urlVersion=0&_userid=972067&md5=2c31626c8839eda088d08d3a1744c13b
Artigo de periodico
III-N(110) surface relaxation and its dependence on the chemical bonding (2000)
Miotto, R.; Ferraz, A. C.; Srivastava, G P
Source: Solid State Communications. Unidade: IF
Assunto: MATÉRIA CONDENSADA
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
MIOTTO, R. e FERRAZ, A. C. e SRIVASTAVA, G P. III-N(110) surface relaxation and its dependence on the chemical bonding. Solid State Communications, v. 115, n. 1, p. 67-71, 2000Tradução . . Disponível em: https://doi.org/10.1016/s0038-1098(00)00145-9. Acesso em: 08 jul. 2024.
APA
Miotto, R., Ferraz, A. C., & Srivastava, G. P. (2000). III-N(110) surface relaxation and its dependence on the chemical bonding. Solid State Communications, 115( 1), 67-71. doi:10.1016/s0038-1098(00)00145-9
NLM
Miotto R, Ferraz AC, Srivastava GP. III-N(110) surface relaxation and its dependence on the chemical bonding [Internet]. Solid State Communications. 2000 ; 115( 1): 67-71.[citado 2024 jul. 08 ] Available from: https://doi.org/10.1016/s0038-1098(00)00145-9
Vancouver
Miotto R, Ferraz AC, Srivastava GP. III-N(110) surface relaxation and its dependence on the chemical bonding [Internet]. Solid State Communications. 2000 ; 115( 1): 67-71.[citado 2024 jul. 08 ] Available from: https://doi.org/10.1016/s0038-1098(00)00145-9

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